EIA-364-66
Abstract: No abstract text available
Text: Product Specification 108-2169-1 08Nov07 Rev A Metal Shell Micro Circular Connector System 1. SCOPE 1.1. Content This specification covers performance, tests and quality requirements for the Tyco Electronics Gigabit Ethernet Threaded version of the Metal Shell Micro Circular Connector System. This system is used
|
Original
|
PDF
|
08Nov07
EIA-364-66
|
microsd adapter
Abstract: No abstract text available
Text: 107-68717 Packaging Specification 08Nov07 Rev C MICRO SD ADAPTER 1. PURPOSE 目的 Define the packaging specifiction and packaging method of MICRO SD ADAPTER. 订定 MICRO SD ADAPTER. 产品之包装规格及包装方式。 2. APPLICABLE PRODUCT 适用范围
|
Original
|
PDF
|
08Nov07
335x230x11
256X143X3
315X200X7
280X170X5
295X182X23
QR-ME-030B
microsd adapter
|
network analyzer connector 7 mm
Abstract: 7 mm connector network analyzer cat 5e cable EIA-568-B-2
Text: 501-664-1 Qualification Test Report 08Nov07 Rev A Metal Shell Micro Circular Connector System 1. INTRODUCTION 1.1. Purpose Testing was performed on the Tyco Electronics Metal Shell Micro Circular Connector System to determine its conformance to the requirements of Product Specification 108-2169-1 Revision A.
|
Original
|
PDF
|
08Nov07
12Jul06
10Nov06.
EMEB058834-003
EMEB058834-005.
network analyzer connector 7 mm
7 mm connector network analyzer
cat 5e cable
EIA-568-B-2
|
Untitled
Abstract: No abstract text available
Text: OBSOLETE 4 PERMITTED FLASH 0.01 INCH MAX Y3 ADDED NOTE 4 AND OBSOLESCENCE OF P/N 1 280358 0 & 1 280359 0 SP 08NOV 2012 Y3
|
Original
|
PDF
|
08NOV
|
Untitled
Abstract: No abstract text available
Text: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 1.00 1 20 REVISIONS ALL RIGHTS RESERVED. BY - 5.08 2 3 P 2.54 0.05 0.02 LTR A 0.02 DESCRIPTION DATE REVISED PER ECO-13-017516 DWN APVD KH 08NOV2013 MB 3.31 REF D D 22.1 1 C MATERIALS AND FINISH
|
Original
|
PDF
|
ECO-13-017516
08NOV2013
01AUG2005
|
SUP90P06-09L
Abstract: No abstract text available
Text: SUP90P06-09L Vishay Siliconix P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) () ID (A)c 0.0093 at VGS = - 10 V - 90 0.0118 at VGS = - 4.5 V - 90 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC RoHS
|
Original
|
PDF
|
SUP90P06-09L
2002/95/EC
O-220AB
SUP90P06-09L-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SUP90P06-09L
|
Untitled
Abstract: No abstract text available
Text: Si1034X Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.5 V Rated
|
Original
|
PDF
|
Si1034X
2002/95/EC
SC-89
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
2060CT
Abstract: No abstract text available
Text: MBR F,B 2035CT thru MBR(F,B)2060CT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier TO-220AB FEATURES • Guardring for overvoltage protection ITO-220AB • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability
|
Original
|
PDF
|
2035CT
2060CT
O-220AB
ITO-220AB
J-STD-020,
O-263AB
ITO-220AB
2002/95/EC
2002/96/EC
2060CT
|
Untitled
Abstract: No abstract text available
Text: MBR F,B 735 thru MBR(F,B)760 Vishay General Semiconductor Schottky Barrier Rectifier TO-220AC FEATURES • Guardring for overvoltage protection ITO-220AC • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability
|
Original
|
PDF
|
O-220AC
ITO-220AC
J-STD-020C,
O-263AB
ITO-220AC
2002/95/EC
2002/96/EC
08-Apr-05
|
2-1926736-3
Abstract: DVSB DC DC Converter SNP-OP-BOARD-01 PFE1100 2-1926733-5 784p Power-On ps_kill
Text: PFE1100-12-054NA Short Form Data Sheet 1100 Watts, 12 VDC Output Features • • • • • • • • • • Best-in-class, 80 PLUS certified “Platinum” efficiency Wide input voltage range: 90-264 VAC AC input with power factor correction Always-On 16.5W programmable standby output 3.3/5 V
|
Original
|
PDF
|
PFE1100-12-054NA
00028-G
08-Nov-2010
784-PFE1100-12-054NA
PFE1100-12-054NA
2-1926736-3
DVSB DC DC Converter
SNP-OP-BOARD-01
PFE1100
2-1926733-5
784p
Power-On
ps_kill
|
Untitled
Abstract: No abstract text available
Text: 4532 SERIES DATA SHEET GAS DISCHARGE TUBE – 4532 SERIES FEATURES High insulation resistance. Low capacitance ≤0.5pF . Accord with IEC61000-4-5 standard.Max Surge current capacity 2000A 8/20ȝs. Accord with ITU-TK.21 standard 4KV 10/700ȝs
|
Original
|
PDF
|
IEC61000-4-5
J-STD-020
08-Nov-100
4532-421-LF
4532-471-LF
4532-501-LF
4532-601-LF
15typ.
08-Nov-12
|
IRFD9024
Abstract: No abstract text available
Text: IRFD9024, SiHFD9024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 60 RDS(on) () • Repetitive Avalanche Rated VGS = - 10 V 0.28 Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • For Automatic Insertion
|
Original
|
PDF
|
IRFD9024,
SiHFD9024
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRFD9024
|
STP13NM60
Abstract: 13NM60 STD13NM60 STF13NM60 STU13NM60 stb13nm60 13nm60n STW1 STB13NM60N MJ430
Text: STx13NM60N N-channel 600 V, 0.28 Ω, 11 A MDmesh II Power MOSFET in D²PAK, DPAK, TO-220FP, I²PAK, TO-220, IPAK, TO-247 Features TAB Order codes VDSS @Tjmax RDS(on) max TAB 3 ID 1 3 1 STB13NM60N STD13NM60N STF13NM60N STI13NM60N STP13NM60N STU13NM60N
|
Original
|
PDF
|
STx13NM60N
O-220FP,
O-220,
O-247
STB13NM60N
STD13NM60N
STF13NM60N
STI13NM60N
STP13NM60N
STU13NM60N
STP13NM60
13NM60
STD13NM60
STF13NM60
STU13NM60
stb13nm60
13nm60n
STW1
MJ430
|
MBR1550CT
Abstract: Diode MBR 1045 MBR1535
Text: MBR F,B 1535CT thru MBR(F,B)1560CT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection ITO-220AB TO-220AB • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability
|
Original
|
PDF
|
1535CT
1560CT
O-220AB
ITO-220AB
MBR15xxCT
MBRF15xxCT
J-STD-020,
O-263AB
ITO-220AB
MBR1550CT
Diode MBR 1045
MBR1535
|
|
|
3035CT
Abstract: 3045CT MBR3035CT MBR3045CT MBRB3035CT MBRF3035CT MBRF3045CT diode 1
Text: New Product MBR F,B 3035CT & MBR(F,B)3045CT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier TO-220AB FEATURES • Guardring for overvoltage protection ITO-220AB • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability
|
Original
|
PDF
|
3035CT
3045CT
O-220AB
ITO-220AB
MBR3035CT
MBR3045CT
MBRF3035CT
MBRF3045CT
J-STD-020,
O-263AB
3035CT
3045CT
MBR3035CT
MBR3045CT
MBRB3035CT
MBRF3035CT
MBRF3045CT
diode 1
|
IRLD120
Abstract: No abstract text available
Text: IRLD120, SiHLD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 12 Qgs (nC) 3.0 Qgd (nC) 7.1 Configuration Available • Repetitive Avalanche Rated 0.27 RoHS* • For Automatic Insertion
|
Original
|
PDF
|
IRLD120,
SiHLD120
2002/95/EC
11-Mar-11
IRLD120
|
IRLZ24L
Abstract: IRLZ24S SiHLZ24L SiHLZ24L-E3 SiHLZ24S
Text: IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Logic-Level Gate Drive
|
Original
|
PDF
|
IRLZ24S,
IRLZ24L,
SiHLZ24S
SiHLZ24L
2002/95/EC
O-263)
O-262)
11-Mar-11
IRLZ24L
IRLZ24S
SiHLZ24L-E3
|
Untitled
Abstract: No abstract text available
Text: M24SR64-Y Dynamic NFC/RFID tag IC with 64-Kbit EEPROM, NFC Forum Type 4 Tag and I²C interface Datasheet - production data Package • 8-lead small-outline package SO8 ECOPACK 2 SO8 (MN) UFDFPN8 (MC) TSSOP8 (DW) • TSSOP8 ECOPACK®2 • UFDFPN8 ECOPACK®2
|
Original
|
PDF
|
M24SR64-Y
64-Kbit
SB12I)
M24SR64-Y
DocID023790
|
Device Orientation
Abstract: device QFN12 QFN-12 QFN16 QFN-16 qfn 12
Text: Device Orientation Vishay Siliconix Device Orientation for QFN-12/QFN-16 DEVICE ORIENTATION PACKAGE METHOD QFN-12 T1 QFN-16 T1 User Direction of Feed Revision control of this drawing is maintained through Document Control, Pack Specification-PACK-0007-15 Document Number: 72725
|
Original
|
PDF
|
QFN-12/QFN-16
QFN-12
QFN-16
Specification-PACK-0007-15
08-Nov-10
Device Orientation
device
QFN12
QFN16
qfn 12
|
IRL640S
Abstract: SMD-220 S10 SMD MARKING
Text: IRL640S, SiHL640S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 5 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single D DESCRIPTION SMD-220 K G D S G • Halogen-free According to IEC 61249-2-21 Definition
|
Original
|
PDF
|
IRL640S,
SiHL640S
SMD-220
2002/95/EC
11-Mar-11
IRL640S
SMD-220
S10 SMD MARKING
|
Untitled
Abstract: No abstract text available
Text: 4 RELEASED ROR PUBLICATION TH IS DRAWING IS U N P U B LIS H E D . C COPYRIGHT 19 2 3 BY AMP INCORPORATED. ,19 LOC A LL RIGHTS R E S E R V E D . CE REVISIONS D IS T 17 D ESC R IPTIO N A REV PER EC 0 A 0 0 —0 4 5 1 —01 ADB 08NOVO D 1. MAXIMUM INSERTION LOSS: 0 .5 d B RANOOM MATE
|
OCR Scan
|
PDF
|
08NOVO
0SNOV01
507/5feie/gfÃ
|
Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING 15 UNPUBLISHED. COPYRIGHT 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AD REVISIONS DIST 00 LTR L A REF B SPACES A V y V y 1 _ TV TV TV y \ 2.54 [.1 0 0 APVD BSV JLG 08NOV05 THE NOTED DIMENSIONS APPLY AT THE INTERSECTION OF THE POST AND THE HOUSING
|
OCR Scan
|
PDF
|
08NOV05
09SEP94
31MAR2000
|
Untitled
Abstract: No abstract text available
Text: 4 TH IS DRAWING IS 2 4 U N P U B L IS H E D . RELEASED FOR PUBLICATION NOV ,2011- R E V IS IO N S ALL RIGHTS RESERVED. 201 1 By Tyco E le c tro n ic s Ja p a n G.K. P LTR D E S C R IP TIO N A DATE RELEASED DWN 08NOV2011 D APVD O COPYRIGHT CD T.K D ± 0.05
|
OCR Scan
|
PDF
|
08NOV2011
V2011
T58-78434
|
Untitled
Abstract: No abstract text available
Text: 8 TH IS DRAWING 7 15 U N P U B LIS H E D . RELEASED FOR 2 3 PUBLICATION A L L RIGHTS COPYRIGHT 4 LOC RESERVED. CM BY TYCO ELECTRONICS CORPORATION. D IS T R E V IS IO N S LTR C1 D E SC RIPTIO N REVISED PER DATE 08NOV05 E C O -0 5 -0 1 2730 DWN APVD KW DB 2.16+0.25
|
OCR Scan
|
PDF
|
ECO-05-012730
08NOV05
31MAR2000
|