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    0820R Price and Stock

    YAGEO Corporation RC0603FR-10820RL

    RES 820 OHM 1% 1/10W 0603
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    DigiKey RC0603FR-10820RL Digi-Reel 28,739 1
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    RC0603FR-10820RL Cut Tape 28,739 1
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    Avnet Americas RC0603FR-10820RL Reel 10,000 28 Weeks 10,000
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    Mouser Electronics RC0603FR-10820RL 28,161
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    Avnet Abacus RC0603FR-10820RL Reel 24 Weeks 10,000
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    IBS Electronics RC0603FR-10820RL 460,000 35,715
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    YAGEO Corporation RC1206JR-10820RL

    RES 820 OHM 5% 1/4W 1206
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    DigiKey RC1206JR-10820RL Reel 10,000 10,000
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    YAGEO Corporation RC1206FR-10820RL

    RES 820 OHM 1% 1/4W 1206
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    DigiKey RC1206FR-10820RL Digi-Reel 6,380 1
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    RC1206FR-10820RL Cut Tape 6,380 1
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    Avnet Abacus RC1206FR-10820RL Reel 24 Weeks 10,000
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    Vishay Dale CRCW1210820RJNEAHP

    RES SMD 820 OHM 5% 3/4W 1210
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    DigiKey CRCW1210820RJNEAHP Cut Tape 4,400 1
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    CRCW1210820RJNEAHP Digi-Reel 4,400 1
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    TE Connectivity 3550820RFT

    RES 3550 820R 1%
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    DigiKey 3550820RFT Digi-Reel 1,856 1
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    3550820RFT Cut Tape 1,856 1
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    3550820RFT Reel 1,000 1,000
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    Master Electronics 3550820RFT
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    Find more 0820R price and stock on Findchips.com

    0820R Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K6X1008C2D-GF55

    Abstract: K6X1008C2D-TF55 K6X1008C2D-TB55 K6X1008C2D-F samsung k6x1008c2d K6X1008C2D-TF70
    Text: Preliminary CMOS SRAM K6X1008C2D Family Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft July 15, 2002 Preliminary 0.1 Revised - Deleted 32-TSOP1-0820R Package Type. - Added Commercial product.


    Original     		K6X1008C2D 128Kx8 32-TSOP1-0820R 0820F) K6X1008C2D-GF55 K6X1008C2D-TF55 K6X1008C2D-TB55 K6X1008C2D-F samsung k6x1008c2d K6X1008C2D-TF70 PDF

    K6X1008

    Abstract: K6X1008T2D K6X1008T2D-B K6X1008T2D-F K6X1008T2D-Q SAMSUNG K6X1008T2D-TF70 K6X1008T2D-PF70
    Text: K6X1008T2D Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft July 15, 2002 Preliminary 0.1 Revised - Deleted 32-TSOP1-0820R, 32-TSOP1-0813.4F/R Package Type. - Added Commercial product.


    Original     		K6X1008T2D 128Kx8 32-TSOP1-0820R, 32-TSOP1-0813 32-SOP-525 32-TSOP1-0820F 0820F) K6X1008 K6X1008T2D-B K6X1008T2D-F K6X1008T2D-Q SAMSUNG K6X1008T2D-TF70 K6X1008T2D-PF70 PDF

    K6X1008C2D-GF55

    Abstract: k6x1008c2d-pf55 K6X1008C2D-GF70 k6x1008c2d-bf55 K6X1008C2D-DF55 K6X1008-C2D-BF55 K6X1008C2D-BF70 samsung k6x1008c2d K6X1008C2D-TF70 K6X1008C2D
    Text: K6X1008C2D Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft July 15, 2002 Preliminary 0.1 Revised - Deleted 32-TSOP1-0820R Package Type. - Added Commercial product.


    Original     		K6X1008C2D 128Kx8 32-TSOP1-0820R 32-SOP-525 32-TSOP1-0820F 0820F) K6X1008C2D-GF55 k6x1008c2d-pf55 K6X1008C2D-GF70 k6x1008c2d-bf55 K6X1008C2D-DF55 K6X1008-C2D-BF55 K6X1008C2D-BF70 samsung k6x1008c2d K6X1008C2D-TF70 PDF

    K6X1008C2D-GF70

    Abstract: K6X1008C2D-PQ701 55ns K6X1008C2D K6X1008C2D-DF55 K6X1008C2D-GF55 K6X1008C2D-TF70 K6X1008C2D-B K6X1008C2D-F K6X1008C2D-Q
    Text: K6X1008C2D Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft July 15, 2002 Preliminary 0.1 Revised - Deleted 32-TSOP1-0820R Package Type. - Added Commercial product.


    Original     		K6X1008C2D 128Kx8 32-TSOP1-0820R 32-SOP-525 32-TSOP1-0820F 0820F) K6X1008C2D-GF70 K6X1008C2D-PQ701 55ns K6X1008C2D-DF55 K6X1008C2D-GF55 K6X1008C2D-TF70 K6X1008C2D-B K6X1008C2D-F K6X1008C2D-Q PDF

    K6X1008T2D-GF70

    Abstract: K6X1008T2D-TB551 K6X1008T2D-TF70 GF551 TF85 K6X1008T2D K6X1008T2D-B K6X1008T2D-F K6X1008T2D-Q SAMSUNG K6X1008T2D-TF70
    Text: Preliminary CMOS SRAM K6X1008T2D Family Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft July 15, 2002 Preliminary 0.1 Revised - Deleted 32-TSOP1-0820R, 32-TSOP1-0813.4F/R Package Type.


    Original     		K6X1008T2D 128Kx8 32-TSOP1-0820R, 32-TSOP1-0813 0820F) K6X1008T2D-GF70 K6X1008T2D-TB551 K6X1008T2D-TF70 GF551 TF85 K6X1008T2D-B K6X1008T2D-F K6X1008T2D-Q SAMSUNG K6X1008T2D-TF70 PDF

    K6X1008T2D-BF852

    Abstract: samsung 822 K6X1008T2D-B K6X1008T2D-F K6X1008T2D-Q K6X1008T2D 32-SOP
    Text: K6X1008T2D Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft July 15, 2002 Preliminary 0.1 Revised - Deleted 32-TSOP1-0820R, 32-TSOP1-0813.4F/R Package Type. - Added Commercial product.


    Original     		K6X1008T2D 128Kx8 32-TSOP1-0820R, 32-TSOP1-0813 32-SOP-525 32-TSOP1-0820F 0820F) K6X1008T2D-BF852 samsung 822 K6X1008T2D-B K6X1008T2D-F K6X1008T2D-Q 32-SOP PDF

    68 1103

    Abstract: KM681000BL A14F
    Text: CMOS SRAM KM681000BL / L-L 128Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION The KM 681000BUBL-L is a 1,048,576-bit high-speed Static Random Access Memory organized as131,072 words by 8 bits. The device is fabricated using Samsung's advanced


    OCR Scan     		KM681000BL 128Kx8 385mW KM681OOOBLP/BLP-L 600mil) KM681000BLG/BLG-L: 525mil) KM681OOOBLT/BLT-L 0820F) KM681000BLR/BLR-L: 68 1103 A14F PDF

    Untitled

    Abstract: No abstract text available
    Text: KM681OOOBLI/BLI-L CMOS SRAM 131,072 W O RD x 8 Bit C M O S Static RAM<mdustnai Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85° C • Fast Access Time: 7 0 ,100ns max.) • Low Power Dissipation Standby (CMOS) : 550;<W(max.)


    OCR Scan     		KM681OOOBLI/BLI-L 100ns 110mW KM681000BLGI/BLG-L 32-SOP-525 KM681000BLTI/BLTI-L 32-TSOP1-0820F KM681000BLRI/BLRI-L 32-TSOP1-0820R KM681000BLI/BLI-L PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM681000BL / L-L 128Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns max. • Low Power Dissipation Standby (CMOS): 550(iW (max.) L Version 110fiW (max.) U- Version Operating : 385mW(max.) • Single 5V±10% Power Supply


    OCR Scan     		KM681000BL 128Kx8 110fiW 385mW KM681OQOBLP/BLP-L 600mil) KM681000BLG/BLG-L: 525mil) KM681000BLT/BLT-L 0820F) PDF

    Untitled

    Abstract: No abstract text available
    Text: KM681000B Family CMOS SRAM Document Title 128K x8 bit Low Power CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft for com m ercial product - Com mercial Product only O ctober 28th, 1992 Prelim inary 0.1 - Initial draft for Extended/Industrial Product


    OCR Scan     		KM681000B 0820F) 0820R) PDF

    Untitled

    Abstract: No abstract text available
    Text: CM O S SRAM KM681OOOBLI/BLI-L 1 3 1 ,0 7 2 W O fíD X 8 B it C M O S S ts tic R A M industriai Temperature Range Operation FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85° C • Fast Access Time: 7 0 ,100ns(max.) • Low Power Dissipation


    OCR Scan     		KM681OOOBLI/BLI-L 100ns 110mW KM681000BLGI/BLG-L 32-SOP-525 KM681000BLTI/BLTI-L 32-TSOP1-0820F KM681000BLRI/BLRI-L 32-TSOP1-0820R KM681000BLI/BLI-L PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KM68FU2000, KM68FS2000, KM68FR2000 Family CMOS SRAM 256Kx8 bit Super Low Vcc High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 um Full CMOS The KM68FU2000, KM68FS2000 and KM68FR2000 • Organization : 256K x 8


    OCR Scan     		KM68FU2000, KM68FS2000, KM68FR2000 256Kx8 KM68FU2000 KM68FS2000 32-SOP, 32-TSOP PDF

    2183A

    Abstract: No abstract text available
    Text: KM68V1000C, KM68U1000C Family CMOS SRAM 128Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4|jm CMOS • Organization : 128K x 8 • Power Supply Voltage KM68V1000C family : 3.3V ± 0.3V KM68U1000C family : 3.0V ± 0.3V


    OCR Scan     		KM68V1000C, KM68U1000C 128Kx8 KM68V1000C 32-SOP, 32-TSOP 32-sTSOP 2183A PDF

    km681000clg-5l

    Abstract: KM681000CLP-7 KM681000CLP-7L KM681000CLT-5L KM681000C KM681000CL KM681000CLI KM681000CL-L KM681000CLP7L
    Text: PRELIMINARY KM681000C Family CMOS SRAM Document Title 128K x8 bit Low Power CMOS Static RAM Revision History History Draft Date Remark 0.0 Initial draft November 22, 1995 Design target 0.1 First revision - Seperate read and write at ICC, ICC1 ICC = ICC1 → Read : 15mA, Write : 35mA


    Original     		KM681000C 100ns 0820R) km681000clg-5l KM681000CLP-7 KM681000CLP-7L KM681000CLT-5L KM681000CL KM681000CLI KM681000CL-L KM681000CLP7L PDF

    0820R

    Abstract: KM681000CLG-7L KM681000CLGI-7L 32-TSOP1-R KM681000CLP-7 KM681000CLT-7L KM681000CLG
    Text: PRIORITY KM681000C Family CMOS SRAM Document Titie 128K x8 bit Low Power CMOS Static RAM Revision History Revision No. History Pratt Date Remark 0.0 Initial draft November 22th 1995 Design target 0.1 First revision - Separate read and write at Icc, Icci Icc = Icci - * Read : 15mA, Write : 35mA


    OCR Scan     		KM681000C 100ns KM681000CL KM681000CLI 0820R KM681000CLG-7L KM681000CLGI-7L 32-TSOP1-R KM681000CLP-7 KM681000CLT-7L KM681000CLG PDF

    KM68U1000BLG8L

    Abstract: 32SOP
    Text: KM68V1000B, KM68U1000B Family CMOS SRAM 128Kx8 bit Low Pow er & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6» «CMOS • Organization : 128K x8 • Power Supply Voltage KM68V1000B family: 3.3V« *0.3V KM68U1000B family: 3.0V- -0.3V


    OCR Scan     		KM68V1000B, KM68U1000B 128Kx8 KM68V1000B 32-SOP, 32-TSOP KM68U1000BLG8L 32SOP PDF

    dg312

    Abstract: No abstract text available
    Text: KM6 8 FV 1OOO CMOS SRAM ELECTRONICS 128Kx8 bit Super Low Vcc High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 um Full CMOS The KM68FV1000, KM68FS1000 and KM68FR1000 • Organization : 128K x 8 family are fabricated by SAMSUNG'S advanced Full


    OCR Scan     		128Kx8 KM68FV1000 KM68FS1000 KM68FR1000 32-SOP, 32-TSOP 32-STSOP KM68FV1000, dg312 PDF

    K6T1008C2E-GB70

    Abstract: K6T1008C2E-DL70 K6T1008C2E-TB55 k6t1008c2e 0855 K6T1008C2E-DB55 K6T1008C2E-DB70 K6T1008C2E-P K6T1008C2E-F k6t1008c2 K6T1008C2EGB70
    Text: K6T1008C2E Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target October 12, 1998 Preliminary 1.0 Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin from industrial product.


    Original     		K6T1008C2E 128Kx8 0820R) K6T1008C2E-GB70 K6T1008C2E-DL70 K6T1008C2E-TB55 k6t1008c2e 0855 K6T1008C2E-DB55 K6T1008C2E-DB70 K6T1008C2E-P K6T1008C2E-F k6t1008c2 K6T1008C2EGB70 PDF

    KM681000BLE

    Abstract: No abstract text available
    Text: CMOS SRAM KM681000BLE / BLE-L 128Kx8 B it Extended Temperature Range Operating SRAM GENERAL DESCRIPTION FEATURES • E x te n d e d T e m p e ra tu r e R a n g e : -2 5 to 85°C T h e K M 6 8 1 0 0 0 B L E /B L E -L is a 1 ,0 4 8 ,5 7 6 -b it h ig h -s p e e d


    OCR Scan     		KM681000BLE 128Kx8 550nW 385mW KM681000BLGE/BLGE-L 32-pin 525mil) KM681000BLTE/BLTE-L KM681000BLRE/BLRE-L PDF

    Untitled

    Abstract: No abstract text available
    Text: KM68V1000C, KM68U1000C Family CMOS SRAM Document Title 128K x8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. 0.0 History Initial draft Draft Data Remark July 3rd 1996 Preliminary 1.0 Finalize - Increased I s b , I dr Commercial part = 1 0 jj.A


    OCR Scan     		KM68V1000C, KM68U1000C KM68V1000C 70/85ns 70/100ns 70/100ns 85/100ns prepM68U1000C PDF

    K6L1008V2C-TF70

    Abstract: KM68U1000C KM68V1000C K6L1008V2C K6L1008V2C-RB70 K6L1008V2C-TB70 STSOP
    Text: K6L1008V2C, K6L1008U2C Family CMOS SRAM Document Title 128K x8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft July 3, 1996 Preliminary 1.0 Finalize - Increased ISB, IDR Commercial part = 10µA


    Original     		K6L1008V2C, K6L1008U2C KM68V1000C 70/85ns 70/100ns KM68U1000C 85/100ns 0820R) K6L1008V2C-TF70 K6L1008V2C K6L1008V2C-RB70 K6L1008V2C-TB70 STSOP PDF

    62128 SRAM

    Abstract: k6t1008c2 K6T1008C2C-DB70 k6t1008c2c CY62128LL-70SI HY628100BLLG-55 HY628100BLG-55 cy62128ll-55sc K6T1008C2C-GL70 RAM 62128
    Text: Approved Manufacturers List for Web Parts Part Number: 100-0007 Rev ECO# A E11137 REVISION HISTORY Description of Change Date Apvd By Initial Release Approved Manufacturers: NOTE: In some cases, components under the same part number may originate from various manufacturers,


    Original     		E11137 HY628100BLLG-55 62128 SRAM k6t1008c2 K6T1008C2C-DB70 k6t1008c2c CY62128LL-70SI HY628100BLLG-55 HY628100BLG-55 cy62128ll-55sc K6T1008C2C-GL70 RAM 62128 PDF

    K6T1008C2E

    Abstract: K6T1008C2E-DL70 K6T1008C2E-B K6T1008C2E-F K6T1008C2E-L K6T1008C2E-P k6t1008c2e-gb55 K6T1008C2E-GB70
    Text: K6T1008C2E Family CMOS SRAM Document Title 128Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target October 12, 1998 Preliminary 1.0 Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin from industrial product.


    Original     		K6T1008C2E 128Kx8 0820R) K6T1008C2E-DL70 K6T1008C2E-B K6T1008C2E-F K6T1008C2E-L K6T1008C2E-P k6t1008c2e-gb55 K6T1008C2E-GB70 PDF

    K6T1008U2C

    Abstract: K6T1008U2C-B K6T1008V2C K6T1008V2C-B KM68U1000C KM68V1000C
    Text: K6T1008V2C, K6T1008U2C Family CMOS SRAM Document Title 128K x8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft July 3, 1996 Preliminary 1.0 Finalize - Increased ISB, IDR Commercial part = 10µA


    Original     		K6T1008V2C, K6T1008U2C KM68V1000C 70/85ns 70/100ns KM68U1000C 85/100ns 0820R) K6T1008U2C-B K6T1008V2C K6T1008V2C-B PDF