RKD701KN
Abstract: No abstract text available
Text: RKD701KN Silicon Schottky Barrier Diode for High Speed Switching REJ03G1471-0100 Rev.1.00 Sep 27, 2006 Features • Low reverse current, Low capacitance. • A free halogen has corresponded. • Ultra small leadless Package 0805type; the use of an undersurface electrode structure for use in compact and
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RKD701KN
REJ03G1471-0100
0805type;
PXSN0002ZA-A
RKD701KN
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Untitled
Abstract: No abstract text available
Text: RKD701KN Silicon Schottky Barrier Diode for High Speed Switching REJ03G1471-0100 Rev.1.00 Sep 27, 2006 Features • Low reverse current, Low capacitance. • A free halogen has corresponded. • Ultra small leadless Package 0805type; the use of an undersurface electrode structure for use in compact and
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RKD701KN
REJ03G1471-0100
0805type;
RKD701KN
PXSN0002ZA-A
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RKD750KN
Abstract: DSA001020
Text: RKD750KN Silicon Schottky Barrier Diode for Detector REJ03G1359-0100 Rev.1.00 May 15, 2006 Features • Low forward voltage, Low capacitance and High detection sensitivity. • Ultra small leadless Package 0805type; the use of an undersurface electrode structure for use in compact and
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RKD750KN
REJ03G1359-0100
0805type;
PXSN0002ZA-A
RKD750KN
DSA001020
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Untitled
Abstract: No abstract text available
Text: RKV600KN Variable Capacitance Diode for VCO REJ03G1305-0100 Rev.1.00 Nov 21, 2005 Features • High capacitance ratio. n = 2.35 min • Low series resistance. (rs = 0.60 Ω max) • Ultra small leadless Package (0805type; the use of an undersurface electrode structure) for use in compact and
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RKV600KN
REJ03G1305-0100
0805type;
RKV600KN
PXSN0002ZA-A
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smd p-98
Abstract: SMD CAPACITOR CODE b7 096TYPE TMK063 CG EMK107 MK107 MK212 R2K equivalent AMK06 AMK212
Text: Notice for TAIYO YUDEN products 1 Please read this notice before using the TAIYO YUDEN products. • Product information in this catalog is as of October 2008. All of the contents specified herein are subject to change without notice due to technical improvements, etc. Therefore, please check for the
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Taiyo 93-R
Abstract: Taiyo 93 T
Text: 当社製品に関するお断り 当社製品をご使用頂く際には事前に必ずお読み下さい。 注 意 • 当カタログの記載内容は2008年10月現在のものです。記載内容は改良などのために予告なく変更することがあります。従いま
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40kHz
4070RH
Taiyo 93-R
Taiyo 93 T
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75LP185
Abstract: 75C185 CDC9843 BERG CONNECTOR floppy drive tagram 74F138 IDT71216 LS138 MPC106 MPC972
Text: Yellowknife Hardware Reference Manual Page 1 /1 Yellowknife Reference Platform Hardware Design Manual Board Revision Level X4 Document Revision Level 1.0 Registration Number: Registration Name c Copyright 1998 by Motorola Incorporated. All rights reserved.
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AN17xx
MPC603
MPC603UM/AD
MPC604
MPC604UM/AD
MPC750
MPC750UM/AD
PC87308VUL
WB83C553
343S0181
75LP185
75C185
CDC9843
BERG CONNECTOR floppy drive
tagram
74F138
IDT71216
LS138
MPC106
MPC972
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RKD701KN
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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RKP203KN
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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RKP202KN
Abstract: No abstract text available
Text: RKP202KN Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G1312-0100 Rev.1.00 Dec 16, 2005 Features • • • • Adopting the trench structure improves low capacitance. C = 0.43 pF max Low forward resistance. (rf = 1.80 Ω max) Low operation current.
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RKP202KN
REJ03G1312-0100
0805type;
PXSN0002ZA-A
RKP202KN
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AZ 2535 08 101
Abstract: Taiyo 93 T Taiyo 93-R
Text: ʁԓ@مॄ܆Ğ॥@ܶۉԓ५ ʁԓ@ڽॄ܆ԓ@֯ॣڏĈمڐɜ@ԓ@م۾э˝֫@ֲ֫ܶ@شے٤ N ܶۉԓ५ ᵉʁ@ࠥɳŗ@ۉŢ۩@Ƿ@ڼڏRPPXȞQP@ڝঊ۩@ۉïۖɩɳNŢ۩@Ƿ@ۉڏÕԻ˦ک@ڽ६@ٝď@ێؾѽĈ०@@ր@@Ã@ۘ֨ɩ
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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RKP201KN
Abstract: No abstract text available
Text: RKP201KN Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G1311-0200 Rev.2.00 Jan 31, 2006 Features • • • • Adopting the trench structure minimize terminal capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max) Low operation current.
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RKP201KN
REJ03G1311-0200
0805type;
PXSN0002ZA-A
RKP201KN
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RKP201KN
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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RKP200KN
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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RKP203KN
Abstract: No abstract text available
Text: RKP203KN Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G1304-0100 Rev.100 Dec 16, 2005 Features • • • • Adopting the trench structure improves low capacitance. C = 0.31 pF max Low forward resistance. (rf = 1.5 Ω max) Low operation current.
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RKP203KN
REJ03G1304-0100
0805type;
PXSN0002ZA-A
RKP203KN
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Untitled
Abstract: No abstract text available
Text: Notice for TAIYO YUDEN products 1 Please read this notice before using the TAIYO YUDEN products. • Product information in this catalog is as of October 2008. All of the contents specified herein are subject to change without notice due to technical improvements, etc. Therefore, please check for the
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RKP201KN
Abstract: No abstract text available
Text: RKP201KN Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G1311-0200 Rev.2.00 Jan 31, 2006 Features • • • • Adopting the trench structure minimize terminal capacitance. C = 0.35 pF max Low forward resistance. (rf = 2.0 Ω max) Low operation current.
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RKP201KN
REJ03G1311-0200
0805type;
PXSN0002ZA-A
RKP201KN
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Untitled
Abstract: No abstract text available
Text: RKP202KN Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G1312-0100 Rev.1.00 Dec 16, 2005 Features • • • • Adopting the trench structure improves low capacitance. C = 0.43 pF max Low forward resistance. (rf = 1.80 Ω max) Low operation current.
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RKP202KN
REJ03G1312-0100
0805type;
RKP202KN
PXSN0002ZA-A
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RKD750KN
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: RKV650KN Variable Capacitance Diode REJ03G1287-0100 Rev.1.00 Apr 20, 2006 Features • • • • Most suitable for terrestrial digital TV broadcasts capable Mobile phones. High capacitance ratio. n = 3.25 min Low series resistance. (rs = 0.75 Ω max)
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RKV650KN
REJ03G1287-0100
0805type;
RKV650KN
PXSN0002ZA-A
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RKP200KN
Abstract: No abstract text available
Text: RKP200KN Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G1302-0200 Rev.2.00 Feb 14, 2006 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 1.3 Ω max)
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RKP200KN
REJ03G1302-0200
0805type;
PXSN0002ZA-A
RKP200KN
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FBM16
Abstract: No abstract text available
Text: f i s 1 > 0 $ HK, BK -> 'J - X ' M i v 5 i U - v a > Multi-Layer chip Inductor (HK, BK-Series) Wave-Form Simulation • ÌT -v m S § Model-circuit & Input of the condition ¿1CDV7 hij , £ t t « W M /W P ; w > * ? 2 B K v y - X f c z : ; |* W 3 f t $
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0805Type
HK0402-0805Type
LK0603-0805Type
BK0402-1206
FBM0603-1812
LAL02
LAN02
LAV35
LHLC06
LHL08
FBM16
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