RKD701KN
Abstract: No abstract text available
Text: RKD701KN Silicon Schottky Barrier Diode for High Speed Switching REJ03G1471-0100 Rev.1.00 Sep 27, 2006 Features • Low reverse current, Low capacitance. • A free halogen has corresponded. • Ultra small leadless Package 0805type; the use of an undersurface electrode structure for use in compact and
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RKD701KN
REJ03G1471-0100
0805type;
PXSN0002ZA-A
RKD701KN
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Untitled
Abstract: No abstract text available
Text: RKD701KN Silicon Schottky Barrier Diode for High Speed Switching REJ03G1471-0100 Rev.1.00 Sep 27, 2006 Features • Low reverse current, Low capacitance. • A free halogen has corresponded. • Ultra small leadless Package 0805type; the use of an undersurface electrode structure for use in compact and
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Original
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PDF
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RKD701KN
REJ03G1471-0100
0805type;
RKD701KN
PXSN0002ZA-A
|
RKD701KN
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Original
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PDF
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Original
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PDF
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