DFN8 2X2
Abstract: IN414 TSV634 TSV632 marking K111 tssop14 st automotive
Text: TSV632, TSV632A, TSV633, TSV633A TSV634, TSV634A, TSV635, TSV635A Dual and quad rail-to-rail input/output 60 µA 880 kHz operational amplifiers Features • Rail-to-rail input and output ■ Low power consumption: 60 µA typ at 5 V ■ Low supply voltage: 1.5 V - 5.5 V
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TSV632,
TSV632A,
TSV633,
TSV633A
TSV634,
TSV634A,
TSV635,
TSV635A
OT23-8
TSSOP-14
DFN8 2X2
IN414
TSV634
TSV632
marking K111
tssop14 st automotive
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SSE12N65SL
Abstract: MosFET
Text: SSE12N65SL 12A , 650V , RDS ON 0.8Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-220P DESCRIPTION The SSE12N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide
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SSE12N65SL
O-220P
SSE12N65SL
07-Nov-2013
MosFET
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Untitled
Abstract: No abstract text available
Text: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material
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STPSC16H065C
O-220AB
STPSC16H065CT
DocID024810
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PoE adapter circuit diagrams
Abstract: PM8803 "power sourcing equipment"
Text: PM8803 High-efficiency, IEEE 802.3at compliant integrated PoE-PD interface and PWM controller Datasheet − production data Features • IEEE 802.3at compliant PD interface ■ Works with power supplied from Ethernet LAN cables or from local auxiliary sources
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PM8803
IEEE802
PoE adapter circuit diagrams
PM8803
"power sourcing equipment"
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TSV99x
Abstract: TSV91 TSV991A K149
Text: TSV991, TSV992, TSV994, TSV991A, TSV992A, TSV994A Rail-to-rail input/output 20 MHz GBP operational amplifiers Datasheet − production data Features • Low input offset voltage: 1.5 mV max A grade ■ Rail-to-rail input and output ■ Wide bandwidth 20 MHz
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TSV991,
TSV992,
TSV994,
TSV991A,
TSV992A,
TSV994A
OT23-5
TSV91
TSV99x
TSV991A
K149
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Untitled
Abstract: No abstract text available
Text: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC6H065
O-220AC
O-220AC
STPSC6H065D
STPSC6H065DI
STPSC6H065B-TR
STPSC6H065G-TR
DocID023247
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PDF
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Untitled
Abstract: No abstract text available
Text: STFI34NM60N N-channel 600 V, 0.092 Ω, 31.5 A MDmesh II Power MOSFET in a I²PAKFP package Datasheet - production data Features Order code VDSS RDS on ID PTOT STFI34NM60N 600 V 0.105 Ω 31.5 A 40 W • 100% avalanche tested • Low input capacitance and gate charge
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STFI34NM60N
STFI34NM60N
DocID022439
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PDF
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Untitled
Abstract: No abstract text available
Text: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure
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STPSC4H065
O-220AC
O-220AC
STPSC4H065D
STPSC4H065DI
DocID023598
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PDF
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Untitled
Abstract: No abstract text available
Text: STPSC20H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 1 K (2) A2 (3) A2 A1 K TO-220AB STPSC20H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material
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STPSC20H065C
O-220AB
STPSC20H065CT
DocID023605
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PDF
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Untitled
Abstract: No abstract text available
Text: STPSC8H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC8H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material
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STPSC8H065C
O-220AB
STPSC8H065CT
DocID024808
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PDF
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IS1651
Abstract: M29DW323D M29DW323DB M29DW323DT TFBGA48
Text: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)
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M29DW323DT
M29DW323DB
24Mbit
IS1651
M29DW323D
M29DW323DB
M29DW323DT
TFBGA48
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Untitled
Abstract: No abstract text available
Text: STV2310 Multistandard TV digital video decoder with adaptive comb filter and RGB/YCrCb input Features • Worldwide TV Standards Compatible ■ Automatic NTSC/PAL/SECAM Digital Chroma Decoder ■ NTSC/PAL Adaptive 4H/2D Comb Filter ■ VBI Data Slicer for Teletext, Closed Caption,
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STV2310
TQFP64
14x14x1
STV2310D/DT
10-bit,
30-MSPS
10x10x1
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PDF
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Untitled
Abstract: No abstract text available
Text: ESDCAN24-2BLY Automotive dual-line Transil , transient voltage suppressor TVS for CAN bus Datasheet - production data Complies with the following standards • ISO 10605 - C = 150 pF, R = 330 Ω : – 30 kV (air discharge) – 30 kV (contact discharge)
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ESDCAN24-2BLY
OT23-3L
DocID022184
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PDF
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Untitled
Abstract: No abstract text available
Text: ESDCAN24-2BLY Automotive dual-line Transil , transient voltage suppressor TVS for CAN bus Datasheet - production data Complies with the following standards • ISO 10605 - C = 150 pF, R = 330 – 30 kV (air discharge) – 30 kV (contact discharge)
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ESDCAN24-2BLY
OT23-3L
ESDCAN24-2BLY
DocID022184
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PDF
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M48T129V
Abstract: M48T129Y
Text: M48T129Y M48T129V 5.0 or 3.3 V, 1 Mbit 128 Kbit x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit, battery, and crystal ■ BCD coded century, year, month, day, date, hours, minutes, and seconds
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M48T129Y
M48T129V
M48T129Y:
M48T129V:
M48T129V
M48T129Y
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Untitled
Abstract: No abstract text available
Text: M68AR024D 16 Mbit 1M x16 1.8V Asynchronous SRAM OBSOLETE PRODUCT FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.65 to 1.95V I/O SUPPLY VOLTAGE: 1.5 to 1.95V 1M WORDS x 16 bits LOW POWER SRAM EQUAL CYCLE and ACCESS TIME: 70ns LOW VCC DATA RETENTION: 1.0V
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M68AR024D
TFBGA48
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PDF
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Untitled
Abstract: No abstract text available
Text: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS PAGE READ MODE
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M29DW640D
TSOP48
24Mbit
TFBGA63
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PDF
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Untitled
Abstract: No abstract text available
Text: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)
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M29DW640D
24Mbit
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PDF
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50T60
Abstract: l9911 alternator voltage regulator Circuit Diagram alternator dc 24v dfm circuit CAR ALTERNATOR REGULATOR
Text: L9911 CAR ALTERNATOR MULTIFUNCTION SMART VOLTAGE REGULATOR PRELIMINARY DATA 1 • ■ ■ ■ ■ ■ ■ ■ ■ 2 Features FULLY MONOLITHIC DESIGN HIGH SIDE FIELD DRIVER THERMAL PROTECTION FIELD SHORT CIRCUIT PROTECTION PROTECTED DIAGNOSTIC LAMP DRIVER PROTECTED HIGH SIDE RELAY DRIVER
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L9911
L9911A
L9911B
L9911C
L9911
50T60
alternator voltage regulator
Circuit Diagram alternator dc 24v
dfm circuit
CAR ALTERNATOR REGULATOR
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PDF
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS COPYRIGHT UNPUBLISHED. 20 RELEASED BY TYCO ELECTRONICS FOR ALL CORPORATION 20 PUBLICATION RIGHTS LOC D IS T REV I S IONS FT RESERVED. LTR DESCRIPTION 0 G 3 B - 0 I 19-01 SUITABLE 0 . 5 ± 0 . I 00 -C l. . 2 07NOV200I MATERIALS AND FINISH
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07NOV200I
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Untitled
Abstract: No abstract text available
Text: TH I S DRAW I NG IS UNPUBLI S HE D. RELEASED BY C O P Y RI G HT 20 TYCO ELECTRONICS F OR CORPORATION. ALL PUBLICATION R 1G H T S 20 L OC RESERVED. D I ST PT R E V LTR I S I O N S DESCRIPTION DATE DWN APVD RELEASED R E V I S E D PER 0 G 3 B - 0 I 19- 01 12NOV2Û Û I
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12NOV2Û
94-VO,
NOV20
07NOV2001
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PDF
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bra 92
Abstract: No abstract text available
Text: TH I S DRAW I NG IS UNPUBL IS H E D . C O P Y R I G H T 20 BY RELEASED TYCO ELECTRONICS CORPORATION ALL FOR 20 P I J B L I C A T I ON RIGHTS REV I S IONS RESERVED. DESCRIPTION REVISED EC O G 3 B - 0 2 I 7 - 0 3 REVISED E CO- 0 5 - 0 0 7 2 47 26MAR2003 OR
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26MAR2003
OAUG2005
5200I
07NOV200I
07NOV200I
3IMAR2000
bra 92
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PDF
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Untitled
Abstract: No abstract text available
Text: 2 THIS £L DRAWIN G IS UNPUBLISHED. C O P Y R I G H T 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R 1G H T S 19 LOC CM RESERVED. R E V I SIONS DIST 00 LTR 040.13 /4 [ I .580] 1.86-2.74 J [ . 0 7 3 - . I 08] L r DESCRIPTION DATE DWN APVD
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I30CT2006
I80CT2006
07NOV2006
I5DEC2006
08-OCT
3IMAR2000
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PDF
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Untitled
Abstract: No abstract text available
Text: TH I S DRAW ING IS UNPUBLI SHED. C O P Y R I G HT 2 0 RELEASED BY TYCO ELECTRONICS FOR CORPORATION. ALL PUBLICATION R 1G H T S 20 LOC PT RESERVED. REV I S IONS D I ST LTR DESCRIPTION DATE DWN APVD RELEASED REVISED PER 0 G 3 B - 0 I 19-01 12 N O V 2 Û Û I
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NOV20
07NOV2001
S-282893
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