Si7456DP
Abstract: No abstract text available
Text: Si7456DP New Product Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A)
|
Original
|
PDF
|
Si7456DP
07-mm
S-03707--Rev.
07-May-01
|
Si4473DY
Abstract: No abstract text available
Text: Si4473DY New Product Vishay Siliconix P-Channel 14-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.011 @ VGS = –4.5 V –13 APPLICATION 0.016 @ VGS = –2.5 V –11 D Battery Switch for Portable Equipment –14
|
Original
|
PDF
|
Si4473DY
S-03657--Rev.
07-May-01
|
Si4862DY
Abstract: No abstract text available
Text: Si4862DY New Product Vishay Siliconix N-Channel 16-V D-S MOSFET FEATURES D TrenchFETr Power MOSFETS: 2.5-V Rated D Low 3.3-mW rDS(on) D Low Gate Resistance PRODUCT SUMMARY VDS (V) 16 rDS(on) (W) ID (A) 0.0033 @ VGS = 4.5 V 25 0.0055 @ VGS = 2.5 V 20 APPLICATIONS
|
Original
|
PDF
|
Si4862DY
S-03596--Rev.
07-May-01
|
DS1642
Abstract: M48T02 M48T12
Text: M48T02 M48T12 5.0V, 16 Kbit 2Kb x8 TIMEKEEPER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, AND POWER-FAIL CONTROL CIRCUIT BYTEWIDE RAM-LIKE CLOCK ACCESS BCD CODED YEAR, MONTH, DAY, DATE,
|
Original
|
PDF
|
M48T02
M48T12
M48T02:
M48T12:
DS1642
M48T02
M48T12
|
Untitled
Abstract: No abstract text available
Text: Package Information Vishay Siliconix TOĆ263 D2PAK : 5 LEADS (For Lead Thickness 25 mil) E E1 A L2 –A– C2 D1 D L E2 1 2 Y 3 4 5 Y L3 A E B C 0.010 M A M INCHES (B) B1 C1 L1 L4 M Z (C) Section Y-Y Detail A NOTES: 1. Plane B includes maximum features of heat sink tab and plastic.
|
Original
|
PDF
|
38ail
T-01063--Rev.
07-May-01
02-May-01
|
Si3905DV
Abstract: No abstract text available
Text: SPICE Device Model Si3905DV Vishay Siliconix Dual P-Channel 8-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
PDF
|
Si3905DV
07-May-01
|
Si4465DY
Abstract: Si4465DY SPICE Device Model
Text: SPICE Device Model Si4465DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
PDF
|
Si4465DY
07-May-01
Si4465DY SPICE Device Model
|
71468
Abstract: Si4467DY
Text: SPICE Device Model Si4467DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
PDF
|
Si4467DY
07-May-01
71468
|
N- and P-Channel 30-V D-S MOSFET
Abstract: Si4542DY P-CHANNEL 30V DS MOSFET
Text: SPICE Device Model Si4542DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
PDF
|
Si4542DY
07-May-01
N- and P-Channel 30-V D-S MOSFET
P-CHANNEL 30V DS MOSFET
|
D2GD
Abstract: No abstract text available
Text: SUM60N04-05LT Vishay Siliconix N-Channel 40-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 60a 0.0065 at VGS = 4.5 V 20a • TrenchFET Power MOSFETS Plus Temperature Sensing Diode • 175 °C Junction Temperature
|
Original
|
PDF
|
SUM60N04-05LT
SUM60N04-05LT
SUM60N04-05LT-E3
11-Mar-11
D2GD
|
Untitled
Abstract: No abstract text available
Text: SUM60N04-12LT Vishay Siliconix Temperature Sensing MOSFET, N-Channel 40-V D-S FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (Ω) ID (A) 0.009 at VGS = 10 V 60a 0.012 at VGS = 4.5 V 60 Notes: a. Package Limited. DESCRIPTION The SUM60N04-12LT is a 40 V N-Channel, 15 mΩ logic
|
Original
|
PDF
|
SUM60N04-12LT
SUM60N04-12LT
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Si3458DV
Abstract: No abstract text available
Text: SPICE Device Model Si3458DV Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
PDF
|
Si3458DV
07-May-01
|
Si4544DY
Abstract: No abstract text available
Text: SPICE Device Model Si4544DY Vishay Siliconix Dual Enhancement-Mode MOSFET N- and P-Channel CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
PDF
|
Si4544DY
07-May-01
|
Si3447DV
Abstract: No abstract text available
Text: SPICE Device Model Si3447DV Vishay Siliconix P-Channel 1.8V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
PDF
|
Si3447DV
07-May-01
|
|
|
Si3445DV
Abstract: No abstract text available
Text: SPICE Device Model Si3445DV Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
PDF
|
Si3445DV
07-May-01
|
Si4562DY
Abstract: No abstract text available
Text: SPICE Device Model Si4562DY Vishay Siliconix Dual N- and P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
PDF
|
Si4562DY
07-May-01
|
Si2309DS
Abstract: Si2309DS SPICE Device Model
Text: SPICE Device Model Si2309DS Vishay Siliconix P-Channel 60-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
PDF
|
Si2309DS
07-May-01
Si2309DS SPICE Device Model
|
A12S
Abstract: Si3456DV
Text: SPICE Device Model Si3456DV Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
PDF
|
Si3456DV
07-May-01
A12S
|
Si2305DS
Abstract: Si2305DS SPICE Device Model
Text: SPICE Device Model Si2305DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
PDF
|
Si2305DS
07-May-01
Si2305DS SPICE Device Model
|
AN924
Abstract: DS1642 M48T02 M48T12
Text: M48T02 M48T12 5.0V, 16 Kbit 2Kb x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, and POWER-FAIL CONTROL CIRCUIT ■ BYTEWIDE RAM-LIKE CLOCK ACCESS ■ BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS
|
Original
|
PDF
|
M48T02
M48T12
24-pin
PCDIP24
M48T02:
M48T12:
AN924
DS1642
M48T02
M48T12
|
Untitled
Abstract: No abstract text available
Text: SUM60P05-11LT Vishay Siliconix P-Channel 55-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) - 55 rDS(on) (Ω) ID (A) 0.011 at VGS = - 10 V - 60a 0.0175 at VGS = - 4.5 V - 60a • TrenchFET Power MOSFETS Plus Temperature Sensing Diode
|
Original
|
PDF
|
SUM60P05-11LT
SUM60P05-11LT
SUM60P05-11LT-E3
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: SUM60N04-12LT Vishay Siliconix Temperature Sensing MOSFET, N-Channel 40-V D-S FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (Ω) ID (A) 0.009 at VGS = 10 V 60a 0.012 at VGS = 4.5 V 60 Notes: a. Package Limited. DESCRIPTION The SUM60N04-12LT is a 40 V N-Channel, 15 mΩ logic
|
Original
|
PDF
|
SUM60N04-12LT
SUM60N04-12LT
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: r i 8 THIS DRAWING IS UNPUBLISHED. S3.COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. .19 ALL RIGHTS RESERVED. LOC DIST GP 00 REVISIONS LTF u 2 \ C 0N T A C T -M A T E R IA L : PHOS. A P O LA R IZ A T IO N FEATURE D AMAA amp ÉAÉÉA ! T T T T 7
|
OCR Scan
|
PDF
|
23FEB95
07MAY01
amp12184
|
Untitled
Abstract: No abstract text available
Text: 2 TH I S DRAW ING IS U NP UBL I S HE D. C O P Y R I G H T 20 R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S CORPORATION. ALL RIGHTS LOG AD RE S E RV E D. 22.50 TYP 2.50 TYP 1A PHOSPHOR BRONZE A GLASS F I L L E D POLYESTER AA 0. 7 6 j m M I N G O L D O V E R I . 2 7 / j m M I N N I C K E L ON C O N T A C T A R E A
|
OCR Scan
|
PDF
|
10JANOO
3IMAR2000
S-120658
|