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    SI3447DV Search Results

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    SI3447DV Price and Stock

    onsemi SI3447DV

    MOSFET 12V 5.2A 2W - Bulk (Alt: SI3447DV)
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    Avnet Americas SI3447DV Bulk 4 Weeks 2,290
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    Vishay Siliconix SI3447DV-T1-E3

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SI3447DV-T1-E3 5,650 7
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    Quest Components SI3447DV-T1-E3 4,520
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    SI3447DV-T1-E3 4,520
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    Fairchild Semiconductor Corporation SI3447DV

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    Bristol Electronics SI3447DV 1,090 7
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    Quest Components SI3447DV 872
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    Rochester Electronics SI3447DV 3,999 1
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    Vishay BLH SI3447DV-T1-E3

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    Bristol Electronics SI3447DV-T1-E3 350 7
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    Vishay Intertechnologies SI3447DV-T1-E3

    POWER FIELD-EFFECT TRANSISTOR, 5.2A I(D), 12V, 0.05OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SI3447DV-T1-E3 280
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    SI3447DV-T1-E3 280
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    SI3447DV Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI3447DV Fairchild Semiconductor P-Channel 1.8V Specified PowerTrench MOSFET Original PDF
    Si3447DV Toshiba Power MOSFETs Cross Reference Guide Original PDF
    Si3447DV Vishay Intertechnology P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI3447DV Vishay Telefunken P-channel 1.8v (g-s) Mosfet Original PDF
    SI3447DV_NL Fairchild Semiconductor P-Channel 1.8V Specified PowerTrench MOSFET Original PDF
    Si3447DV SPICE Device Model Vishay P-Channel 1.8V (G-S) MOSFET Original PDF

    SI3447DV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si3447DV-T1

    Abstract: Si3447BDV Si3447BDV-T1 Si3447BDV-T1-E3 Si3447DV
    Text: Specification Comparison Vishay Siliconix Si3447BDV vs. Si3447DV Description: P-Channel, 1.8 V G-S MOSFET Package: TSOP-6 Pin Out: Identical Part Number Replacements: Si3447BDV-T1 Replaces Si3447DV-T1 Si3447BDV-T1-E3 (Lead (Pb)-free version) Replaces Si3447DV-T1


    Original     		PDF Si3447BDV Si3447DV Si3447BDV-T1 Si3447DV-T1 Si3447BDV-T1-E3 06-Nov-06

    Untitled

    Abstract: No abstract text available
    Text: Si3447DV Vishay Siliconix P-Channel 1.8-V G-S MOSFET New Product PRODUCT SUMMARY VDS (V) –12 RDS(ON) (W) ID (A) 0.050 @ VGS = –4.5 V "5.2 0.070 @ VGS = –2.5 V "4.4 0.095 @ VGS = –1.8 V "3.8 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D


    Original     		PDF Si3447DV S-59646--Rev. 28-Sep-98

    Si3447DV

    Abstract: No abstract text available
    Text: Si3447DV Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.050 @ VGS = –4.5 V "5.2 0.070 @ VGS = –2.5 V "4.4 0.095 @ VGS = –1.8 V "3.8 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm


    Original     		PDF Si3447DV S-59646--Rev. 28-Sep-98

    Untitled

    Abstract: No abstract text available
    Text: Si3447DV P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –5.5 A, –20 V.


    Original     		PDF Si3447DV

    a14s

    Abstract: Si3447DV
    Text: SPICE Device Model Si3447DV Vishay Siliconix P-Channel 1.8V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3447DV S-50383Rev. 21-Mar-05 a14s

    Si3447DV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3447DV Vishay Siliconix P-Channel 1.8V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3447DV 07-May-01

    Si3447DV

    Abstract: No abstract text available
    Text: Si3447DV P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –5.5 A, –20 V.


    Original     		PDF Si3447DV

    Si3447DV

    Abstract: No abstract text available
    Text: Si3447DV Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.050 @ VGS = - 4.5 V "5.2 0.070 @ VGS = - 2.5 V "4.4 0.095 @ VGS = - 1.8 V "3.8 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET


    Original     		PDF Si3447DV 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si3447DV Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.050 @ VGS = - 4.5 V "5.2 0.070 @ VGS = - 2.5 V "4.4 0.095 @ VGS = - 1.8 V "3.8 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET


    Original     		PDF Si3447DV 08-Apr-05

    diode 8a 600v

    Abstract: 4 pin optocoupler 4PIN optocoupler bidirectional optocoupler toshiba logic level complementary MOSFET IGBT gate optocoupler driver for a buck converter hma121 0.75KW layout 48 VOLT 150 AMP smps FET pair n-channel p-channel full bridge
    Text: Fairchild New Product Highlights, #1, August 2001 Interface & Logic Optoelectronics Fairchild New Product Highlights Analog Discrete Power Switch for off-line power supply See page 2 The Latest Fairchild Innovations Contents Comprehensive New Product List


    Original     		PDF Power247TM, diode 8a 600v 4 pin optocoupler 4PIN optocoupler bidirectional optocoupler toshiba logic level complementary MOSFET IGBT gate optocoupler driver for a buck converter hma121 0.75KW layout 48 VOLT 150 AMP smps FET pair n-channel p-channel full bridge

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


    Original     		PDF Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05

    Siliconix

    Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
    Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123


    Original     		PDF 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    22B4 diode ZENER

    Abstract: smk 1350 transistor 88E1111 BCC package SIL1162 LS650 C3333 P33A zener DIODE 5c2 39C6 2N7002DW
    Text: 8 6 7 2 3 4 5 1 CK APPD DRAWING 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN DATE 02 D PAGE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18


    Original     		PDF MPC7447A 400PIN LMC7211 NC7S32 MAX4172 TPS2211 FAN2558 MAX1772 MAX1717 22B4 diode ZENER smk 1350 transistor 88E1111 BCC package SIL1162 LS650 C3333 P33A zener DIODE 5c2 39C6 2N7002DW