Toshiba TLX-1741-C3M LCD display
Abstract: kcb104vg2ca-a43 LQ088H9DR01 TOSHIBA TLX-1741-C3M KCS077VG2EA-A43 LM32P073 tlx-1741-c3m M170EN04 LP104S06-A1 DMF50081N
Text: LCD Module to ERG Inverter Part Number Cross-Reference Guide LCD Manufacturer Acer Acer AND AND AND AND AND AND AND AND AND AND AND AND AU Optronics AU Optronics AU Optronics AU Optronics AU Optronics AU Optronics AU Optronics AU Optronics AU Optronics AU Optronics
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L150X2M-1
L170E3-4
AND08C351-HB
AND10C209A-4HB
AND10C209A-DHB
AND10C209A-HB
AND10C273-4HB
AND10C273-DHB
AND10C273-HB
AND10C306L
Toshiba TLX-1741-C3M LCD display
kcb104vg2ca-a43
LQ088H9DR01
TOSHIBA TLX-1741-C3M
KCS077VG2EA-A43
LM32P073
tlx-1741-c3m
M170EN04
LP104S06-A1
DMF50081N
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SI4888DY
Abstract: si4888dy-t1-e3 Si4888DY-T1
Text: Si4888DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 16 0.010 @ VGS = 4.5 V 13 D TrenchFETr Power MOSFET D High-Efficiency PWM Optimized D 100% Rg Tested D SO-8 S S
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Si4888DY
Si4888DY-T1
Si4888DY--E3
Si4888DY-T1--E3
S-50404--Rev.
07-Mar-05
si4888dy-t1-e3
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Untitled
Abstract: No abstract text available
Text: Si7818DN New Product Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.135 @ VGS = 10 V 3.4 0.142 @ VGS = 6 V 3.3 Qg(Typ) 20 nC D PWM-Optimized TrenchFETr Power MOSFET D 100% Rg Tested Product Is D Avalanche Tested
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Si7818DN
Si7818DN-T1--E3
S-50405--Rev.
07-Mar-05
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PDF
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50403
Abstract: No abstract text available
Text: Si1867DL Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 8 rDS(on) (W) ID (A) 0.600 @ VIN = 4.5 V "0.6 0.850 @ VIN = 2.5 V "0.5 1.200 @ VIN = 1.8 V "0.2 D D D D D TrenchFETr Power MOSFET 600-mW Low rDS(on) 1.8- to 8-V Input
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Si1867DL
600-mW
SC70-6
S-50403--Rev.
07-Mar-05
50403
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PDF
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Si4925DY
Abstract: Si4925DY-T1
Text: Si4925DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 30 rDS(on) (W) ID (A) 0.032 @ VGS = −10 V −6.3 0.045 @ VGS = −4.5 V −5.3 D TrenchFETr Power MOSFET Pb-free Available SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2
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Si4925DY
Si4925DY-T1
Si4925DY--E3
Si4925DY-T1--E3
08-Apr-05
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PDF
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TB-17
Abstract: Si5499DC
Text: Si5499DC New Product Vishay Siliconix P-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)e 0.036 @ VGS = −4.5 V −6 0.045 @ VGS = −2.5 V −6 0.056 @ VGS = −1.8 V −6 0.077 @ VGS = −1.5 V −6 VDS (V) −8 D TrenchFETr Power MOSFET: 1.5-V Rated
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Si5499DC
08-Apr-05
TB-17
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PDF
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SUD08P06-155L
Abstract: No abstract text available
Text: SUD08P06-155L New Product Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 60 rDS(on) (W) ID (A) 0.155 @ VGS = −10 V −8.4 0.280 @ VGS = −4.5 V −7.4 Qg (Typ) 12 5 12.5 D TrenchFETr Power MOSFET D 175_C Rated Maximum Junction Temperature
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SUD08P06-155L
O-252
SUD08P06-155L--E3
S-50385--Rev.
07-Mar-05
SUD08P06-155L
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Untitled
Abstract: No abstract text available
Text: Si4888DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 16 0.010 @ VGS = 4.5 V 13 D TrenchFETr Power MOSFET D High-Efficiency PWM Optimized D 100% Rg Tested D SO-8 S S
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Si4888DY
Si4888DY-T1
Si4888DY--E3
Si4888DY-T1--E3
18-Jul-08
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PDF
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50386
Abstract: SI4900DY
Text: Si4900DY New Product Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.058 @ VGS = 10 V 5.3 0.072 @ VGS = 4.5 V 4.7 VDS (V) 60 D TrenchFETr Power MOSFET D RoHS Compliant Qg (Typ) Product Is Completely Pb-free
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Si4900DY
Si4900DY-T1--E3
08-Apr-05
50386
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50386
Abstract: No abstract text available
Text: Si4900DY New Product Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.058 @ VGS = 10 V 5.3 0.072 @ VGS = 4.5 V 4.7 VDS (V) 60 D TrenchFETr Power MOSFET D RoHS Compliant Qg (Typ) Product Is Completely Pb-free
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Si4900DY
Si4900DY-T1--E3
S-50386--Rev.
07-Mar-05
50386
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PDF
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B 57 995
Abstract: XT32P XT36C XT38P XT46C XT49M XT49ML XT57C
Text: Tape and Reel Specifications Vishay Dale Surface Mount Tape and Reel TAPE AND REEL SPECIFICATIONS in inches millimeters 120° A M B D H E J I G F C K L TAPE SPECIFICATIONS MODEL A B C D E F QTY/REEL XT32P Ø 0.059 (1.50) 0.157 (4.0) 0.315 (8.0) 0.295 (7.5)
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XT32P
XT38P
XT49M
XT49ML
XT46C
XT57C
XT36C
XOSM-57/573/572/571
XOSM-533/532/531
07-Mar-05
B 57 995
XT32P
XT36C
XT38P
XT46C
XT49M
XT49ML
XT57C
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VHP100
Abstract: No abstract text available
Text: VHP100 Vishay Foil Resistors Bulk Metal Foil Technology Ultra Precision, Zero TCR Resistor FEATURES The TCR of the VHP100 is so small that an additional definition window has been introduced. The window definition requires that the absolute resistance remain within the stated window
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VHP100
VHP100
60ppn
VHP101
10ppm
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si4840DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 14 0.012 @ VGS = 4.5 V 12 D TrenchFETr Power MOSFET D 100% Rg Tested Pb-free Available D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G
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Si4840DY
Si4840DY-T1
Si4840DY--E3
Si4840DY-T1--E3
18-Jul-08
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PDF
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GS1085
Abstract: to252ab gs10851
Text: GS1085 Vishay Siliconix 3A Low Dropout Positive Adjustable Regulator TO-252 DPak TO-263AB (D2Pak) TO-220AB 2 3 2 3 1 1 3 2 GS1085CE 1 GS1085CT GS1085CM Pin Definition 1. Adjust/Gnd. 2. Vout (tab) 3. Vin Description The GS1085 is a low dropout three terminal regulator with
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GS1085
O-252
O-220AB
O-263AB
GS1085CE
GS1085CT
GS1085CM
GS1085
2500/Reel
07-Mar-05
to252ab
gs10851
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Dual Row, SMT Vertical header
Abstract: 6620
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: NYLON 6T COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: TIN QUALITY CLASS: 25 MATING CYCLES PITCH: 3.00MM A ENVIRONMENTAL OPERATING TEMPERATURE: -25 UP TO 105°C FLAMABILITY RATING: UL94-V0
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UL94-V0
04-DEC-07
26-FEB-07
07-MAR-05
06-OCT-04
Dual Row, SMT Vertical header
6620
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PDF
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Si4840DY
Abstract: Si4840DY-T1
Text: Si4840DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 14 0.012 @ VGS = 4.5 V 12 D TrenchFETr Power MOSFET D 100% Rg Tested Pb-free Available D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G
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Si4840DY
Si4840DY-T1
Si4840DY--E3
Si4840DY-T1--E3
08-Apr-05
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PDF
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595D
Abstract: CECC30801
Text: 595D Vishay Sprague Solid Tantalum Chip Capacitors TANTAMOUNT , Conformal Coated, Maximum CV FEATURES • • • • New extended range offerings. Large capacitance rating range. Terminations: Tin 2 standard. 8mm, 12mm tape and reel packaging available per EIA
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178mm]
330mm]
535BAAC
CECC30801
07-Mar-05
595D
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: NYLON 6T FLAMABILITY RATING: UL94-V0 COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: TIN QUALITY CLASS: 25 MATING CYCLES PITCH: 3.00MM A ENVIRONMENTAL OPERATING TEMPERATURE: -25 UP TO 105°C
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UL94-V0
17-NOV-08
04-DEC-07
26-FEB-07
07-MAR-05
06-OCT-04
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PDF
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VHP100
Abstract: No abstract text available
Text: VHP100 Vishay Foil Resistors Bulk Metal Foil Technology Ultra Precision, Zero TCR Resistor FEATURES The TCR of the VHP100 is so small that an additional definition window has been introduced. The window definition requires that the absolute resistance remain within the stated window
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VHP100
VHP100
60ppn
VHP101
10ppm
VHP102*
VHP103*
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PDF
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1417 transistor
Abstract: R631 transistor 1417 81R1
Text: 1417 Vishay Foil Resistors Bulk Metal Foil Technology 8 Pin Transistor Outline Hermetic Resistor Network The eight pin TO-5 package with 0.230" pin circle is an alternative layout to Model 1413. This network can contain up to 12, V5X5 resistor chips. Review data sheet “7 Technical Reasons to Specify Bulk Metal®
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07-Mar-05
1417 transistor
R631
transistor 1417
81R1
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SUD08P06-155L
Abstract: No abstract text available
Text: SUD08P06-155L New Product Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 60 rDS(on) (W) ID (A) 0.155 @ VGS = −10 V −8.4 0.280 @ VGS = −4.5 V −7.4 Qg (Typ) 12 5 12.5 D TrenchFETr Power MOSFET D 175_C Rated Maximum Junction Temperature
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SUD08P06-155L
O-252
SUD08P06-155L--E3
08-Apr-05
SUD08P06-155L
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PDF
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SI4425DY-E3
Abstract: Si4425DY Si4425DY-T1
Text: Si4425DY Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.014 @ VGS = −10 V −11 0.023 @ VGS = −4.5 V −8.5 FEATURES D TrenchFETr Power MOSFET Pb-free Available SO-8 S S S G S 8 D 2 7 D 3 6 D 4 5 D 1 G Top View
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Si4425DY
Si4425DY-T1
Si4425DY--E3
Si4425DY-T1--E3
18-Jul-08
SI4425DY-E3
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PDF
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Untitled
Abstract: No abstract text available
Text: 2 THIS DRAWING IS UNPUBLISHED. 1 3 PUBLICATION REVISIO NS .L RIGHTS RESERVED. 3 ELECTRONICS CORPORATION. AD 00 DESCRIPTION 07MAR05 BSVJRO 0.51 0 20 ] STAND -O FFS FLAME RETARDANT POLYESTER PCT, COLOR - BLACK PHOSPHOR BRONZE DUPLEX PLATED: 0.00076 .00 00 30 GOLD ON CONTACT AREA
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OCR Scan
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07MAR05
2002/95/EC
I-0-100
MAR2000
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PDF
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Untitled
Abstract: No abstract text available
Text: i 4 RELEASED FOR PUBLICATION FREI F U E R V E R O E F F E N T L I C H U N G COPYRIGHT BY or AMP AHF 1996 INC O R P O R A Titu. ED NLUKKUKA i 3 M A T E D WITH: P A S S E N D ZU: , Ì996. A L L E RRIEGCHHTTSE RESERVED. VORBEHALTEN 2 LOC DIST REVISIONS A ENDERUNGEN
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E95-52567
07MAR05
17N0V04
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PDF
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