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    07AUG2007 Search Results

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    McMaster-Carr

    Abstract: m174 92196a ATC200B marking h5 92196A1 91252 5050-0037
    Text: SD3933 HF/VHF/UHF RF power N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF


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    PDF SD3933 2002/95/EEC SD3933 McMaster-Carr m174 92196a ATC200B marking h5 92196A1 91252 5050-0037

    SD3932

    Abstract: pF CAPACITOR 100v 700B
    Text: SD3932 RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary Data Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 26.8 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC


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    PDF SD3932 2002/95/EC SD3932 250MHz. pF CAPACITOR 100v 700B

    F13NK50Z

    Abstract: STP13NK50Z F13NK50 P13NK50Z STW13NK50Z STF13NK50Z p13nk50 W13NK50Z B2 marking code Zener JESD97
    Text: STF13NK50Z STP13NK50Z - STW13NK50Z N-channel 500V - 0.40Ω - 11A TO-220/TO-220FP/TO-247 Zener-protected SuperMESHTM Power MOSFET Features Type VDSS RDS on ID Pw STF13NK50Z 500 V <0.48 Ω 11 A 30 W STP13NK50Z 500 V <0.48 Ω 11 A 140 W STW13NK50Z 500 V <0.48 Ω 11 A


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    PDF STF13NK50Z STP13NK50Z STW13NK50Z O-220/TO-220FP/TO-247 STP13NK50Z O-220 O-220FP O-247 F13NK50Z F13NK50 P13NK50Z STW13NK50Z STF13NK50Z p13nk50 W13NK50Z B2 marking code Zener JESD97

    Untitled

    Abstract: No abstract text available
    Text: A5973AD 2 A switch step down switching regulator for automotive applications Features • Qualified following the AEC-Q100 requirements temperature Grade 3 , see PPAP for more details ■ Temperature range -40 °C to 85 °C ■ 1.5 A DC output current ■


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    PDF A5973AD AEC-Q100

    100C

    Abstract: 700B SD3932
    Text: SD3932 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 26.8 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC European directive Description


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    PDF SD3932 2002/95/EC SD3932 100C 700B

    Untitled

    Abstract: No abstract text available
    Text: M25P05-A 512 Kbit, serial Flash memory, 50 MHz SPI bus interface Features • 512 Kbit of Flash memory ■ Page Program up to 256 bytes in 1.4 ms (typical) ■ Sector Erase (256 Kbit) in 0.65 s (typical) ■ Bulk Erase (512 Kbit) in 0.85 s (typical) ■


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    PDF M25P05-A 2010h)

    L5973AD

    Abstract: STPS340U A5973AD A5973ADTR AEC-Q100 13958
    Text: A5973AD Up to 1.5 A step down switching regulator for automotive applications Features • Qualified following the AEC-Q100 requirements see PPAP for more details ■ 1.5 A DC output current ■ Operating input voltage from 4 V to 36 V ■ 3.3 V / (±2 %) reference voltage


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    PDF A5973AD AEC-Q100 A5973AD L5973AD STPS340U A5973ADTR AEC-Q100 13958

    F13NK50Z

    Abstract: F13NK50 p13nk50 P13NK50Z STF13NK50Z f13nk W13NK50Z STP13NK50Z STMicroelectronics date code to-220 STW13NK50Z
    Text: STF13NK50Z STP13NK50Z, STW13NK50Z N-channel 500 V, 0.40 Ω, 11 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESHTM Power MOSFET Features Type VDSS RDS on max ID Pw STF13NK50Z 500 V <0.48 Ω 11 A 30 W STP13NK50Z 500 V <0.48 Ω 11 A 140 W STW13NK50Z 500 V


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    PDF STF13NK50Z STP13NK50Z, STW13NK50Z O-220, O-220FP, O-247 STP13NK50Z O-220FP F13NK50Z F13NK50 p13nk50 P13NK50Z STF13NK50Z f13nk W13NK50Z STP13NK50Z STMicroelectronics date code to-220 STW13NK50Z

    100C

    Abstract: 700B SD3932
    Text: SD3932 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 26.8 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC European directive


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    PDF SD3932 2002/95/EC SD3932 14and 100C 700B

    A5973AD

    Abstract: No abstract text available
    Text: A5973AD Up to 1.5 A step-down switching regulator for automotive applications Datasheet - production data Application • Dedicated to automotive applications Description HSOP8 - exposed pad Features  Qualified following the AEC-Q100 requirements see PPAP for more details


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    PDF A5973AD AEC-Q100 DocID13958 A5973AD

    3348DC

    Abstract: No abstract text available
    Text: M29W400DT M29W400DB 4 Mbit 512 Kb x 8 or 256 Kb x 16, boot block 3 V supply Flash memory Features „ Supply voltage – VCC = 2.7 V to 3.6 V for Program, Erase and Read SO44 (M)(1) „ Access time: 45, 55, 70 ns „ Programming time – 10 s per byte/word typical


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    PDF M29W400DT M29W400DB 0020h 3348DC

    vdfpn8

    Abstract: AN1995 M25P05-A
    Text: M25P05-A 512 Kbit, serial Flash memory, 50 MHz SPI bus interface Features • 512 Kbit of Flash memory ■ Page Program up to 256 bytes in 1.4 ms (typical) ■ Sector Erase (256 Kbit) in 0.65 s (typical) ■ Bulk Erase (512 Kbit) in 0.85 s (typical) ■


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    PDF M25P05-A 2010h) vdfpn8 AN1995 M25P05-A

    E25x13x7

    Abstract: No abstract text available
    Text: EVL6562A-TM-80W 80 W high performance transition mode PFC evaluation board Data Brief Features • Line voltage range: 88 to 265 VAC ■ Minimum line frequency fL : 47 Hz ■ Regulated output voltage: 400 V ■ Rated output power: 80 W ■ Maximum 2fL output voltage ripple: 10 V pk-pk


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    PDF EVL6562A-TM-80W L6562A E25x13x7

    Untitled

    Abstract: No abstract text available
    Text: SD3933 HF/VHF/UHF RF power N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF


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    PDF SD3933 2002/95/EEC SD3933

    Untitled

    Abstract: No abstract text available
    Text: STD37N05TZ NPN power TRILINTON Preliminary Data Features • Integrated high voltage active clamping zener ■ Integrated antiparallel collector-emitter diode ■ Clamping energy capability 100% tested ■ Very high current gain Tab 3 1 Applications ■ Engine ignition control


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    PDF STD37N05TZ STD37N05TZ

    M36L0R7050U3

    Abstract: M69KM024A M36L0R7050UL3 ADQ14 M36L0R8060L3 Numonyx MCP M69KM048AB
    Text: M36L0Rx0x0UL3 128- or 256-Mbit mux I/O, multiple bank, multilevel, burst flash memory, and 32- or 64-Mbit PSRAM, 1.8 V supply MCP Target Specification Features • ■ ■ Multichip package – 1 die of 128 Mbits (8 Mbits x16) or 256 Mbits (16 Mbits x16), mux I/O multiple


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    PDF M36L0Rx0x0UL3 256-Mbit 64-Mbit M36L0R7050U3/M36L0R7060U3: 882Eh M36L0R8050U3/M36L0R8060U3: 881Ch M36L0R7050L3/M36L0R7060L3: 882Fh M36L0R8050L3/M36L0R8060L3: M36L0R7050U3 M69KM024A M36L0R7050UL3 ADQ14 M36L0R8060L3 Numonyx MCP M69KM048AB

    595D

    Abstract: A5973AD A5973D AEC-Q100 GRM42-2 UMK325BJ106MM-T UMK325BJ106
    Text: A5973AD Up to 1.5 A step down switching regulator for automotive applications Features • Qualified following the AEC-Q100 requirements see PPAP for more details ■ 1.5 A DC output current ■ Operating input voltage from 4 V to 36 V ■ 3.3 V / (±2%) reference voltage


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    PDF A5973AD AEC-Q100 595D A5973AD A5973D AEC-Q100 GRM42-2 UMK325BJ106MM-T UMK325BJ106

    McMaster-Carr

    Abstract: SD3933 12AWG 700B M177 MCMASTER 92196A146 ATC200B103MW50X 92196A1 92196A108
    Text: SD3933 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive


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    PDF SD3933 2002/95/EEC SD3933 McMaster-Carr 12AWG 700B M177 MCMASTER 92196A146 ATC200B103MW50X 92196A1 92196A108

    Untitled

    Abstract: No abstract text available
    Text: SD3932 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 26.8 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC European directive Description


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    PDF SD3932 2002/95/EC SD3932

    Untitled

    Abstract: No abstract text available
    Text: 2 THIS £L DRAWING IS UNPUBLISHED. C O P Y R I G H T 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR 20 PUBLICATION R 1G H T S LOC 00 GP RESERVED. R E V ISIONS DIST LTR DESCRIPTION DATE DWN APVD NEW R E L E A S E 07AUG2007 RG PD R E V PE R E C O - I 1 - 0 2 0 8 3 1


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    PDF 07AUG2007 I4SEP201 3IMAR2000

    Untitled

    Abstract: No abstract text available
    Text: 4 T H IS D R AW IN G IS U N P U B L IS H E D . CO PYR IG H T 2005 3 2 R E LE A S E D FO R PU B LIC A TIO N BY ^ C O ELEC TR O N IC S CO RPO RATIO N . R E V IS IO N S A L L R IG H T S R E S E R V E D . A, LTR D E S C R IP T IO N DATE REVISED PER ECO 0 7 -0 1 7 7 0 2 & 0 S 1 4 - 0 4 5 7 - 0 4


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    PDF 07AUG2007

    Untitled

    Abstract: No abstract text available
    Text: TH I S DRAW I NG IS UNPUBLI S HE D. C O P Y RI G HT 20 RELEASED BY TYCO ELECTRONICS CORPORATION. F OR ALL PUBLICATION R 1G H T S 20 L OG RESERVED. D I ST R E V 00 GP LTR DESCRIPTION NEW P A R T N U M B E R C H A N G E S A N D OR D E S I G N NTERCHANGEABILITY


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    PDF UL94V-0 07AUG2007

    Untitled

    Abstract: No abstract text available
    Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. DIST R E VIS IO N S CM 00 LTR A SEE D E T A IL DESCRIPTION ECO—07 —01 51 65 1 PARTS C O M PLY TO AM P SO LD ERABILITY


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    PDF 07AUG07 UL94V-2, 07AUG2007 31MAR2000

    Untitled

    Abstract: No abstract text available
    Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 4 5 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. DIST CM R E VIS IO N S 00 LTR DESCRIPTION A DATE ECO—07 —01 51 69 DWN KW DC 07AUG07 1 . PARTS COMPLY TO AMP SOLDERABILITY SPECIFICATION


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    PDF 07AUG07 07AUG2007 31MAR2000