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    06N6 Search Results

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    06N6 Price and Stock

    Cal-Chip Electronics CHV1206N630680JCT

    HVCAP1206 COG 68PF 5% 630V
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    DigiKey CHV1206N630680JCT Digi-Reel 3,000 1
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    CHV1206N630680JCT Cut Tape 3,000 1
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    CHV1206N630680JCT Reel 3,000 3,000
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    Cal-Chip Electronics CHV1206N630102KXT

    HVCAP1206 X7R 1000PF 10% 630V
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    DigiKey CHV1206N630102KXT Reel 3,000 3,000
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    CHV1206N630102KXT Digi-Reel 3,000 1
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    CHV1206N630102KXT Cut Tape 3,000 1
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    Cal-Chip Electronics CHV1206N630472KXT

    HVCAP1206 X7R 4700PF 5% 630V
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    DigiKey CHV1206N630472KXT Reel 3,000 3,000
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    CHV1206N630472KXT Digi-Reel 3,000 1
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    CHV1206N630472KXT Cut Tape 3,000 1
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    Cal-Chip Electronics CHV1206N630120JCT

    HVCAP1206 COG 12PF 5% 630V
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    DigiKey CHV1206N630120JCT Cut Tape 2,998 1
    • 1 $0.39
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    • 1000 $0.10116
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    CHV1206N630120JCT Digi-Reel 2,998 1
    • 1 $0.39
    • 10 $0.228
    • 100 $0.145
    • 1000 $0.10116
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    Cal-Chip Electronics CHV1206N630681KXT

    HVCAP1206 X7R 680PF 10% 630V
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    DigiKey CHV1206N630681KXT Digi-Reel 2,747 1
    • 1 $0.27
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    • 100 $0.0968
    • 1000 $0.06593
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    CHV1206N630681KXT Cut Tape 2,747 1
    • 1 $0.27
    • 10 $0.155
    • 100 $0.0968
    • 1000 $0.06593
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    Find more 06N6 price and stock on Findchips.com

    06N6 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    06n60

    Abstract: 7a sf M6G DATASHEET
    Text: 3VD393600YL 3VD393600YL Ø MOSFET 3VD393600YL 600V N MOS Ø Ø Ø Ø TO-220 06N60 Ø AC-DC DC-DC H Ø 4.03mm*3.76mm Ø 300±20 m Ø Al PMW Au Tamb=25°C (TO-220 ) VDS 600 V VGS ±30 V ID 7 A PD 110 W TJ -55 +150 °C Tstg -55 +150 °C (Tamb=25°C) BVDSS VGS=0V


    Original     		3VD393600YL O-220 06N60 06n60 7a sf M6G DATASHEET PDF

    FMA06N

    Abstract: fma06n60e 06N60E
    Text: DATE DRAWN Aug.-31-'07 CHECKED Aug.-31-'07 CHECKED Aug.-31-'07 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor


    Original     		August-31-2007 MS5F6907 FMA06N60E H04-004-05 H04-004-03 FMA06N fma06n60e 06N60E PDF

    transistor df 331

    Abstract: d39 marking
    Text: 06N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated V DS @ T j,max 650 V R DS on ,max 0.75 Ω I D1) 6.2 A • High peak current capability • Ultra low effective capacitances


    Original     		SPA06N60C3 PG-TO220-3-31 SP000216301 06N60C3 transistor df 331 d39 marking PDF

    SMD Transistor g12

    Abstract: No abstract text available
    Text: 06N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		SPP06N60C3 PG-TO220-3-1 Q67040-S4629 06N60C3 SMD Transistor g12 PDF

    06N60C3

    Abstract: DF marking code smd transistor TRANSISTOR SMD MARKING CODE G12 smd transistor marking g12 smd marking F62 06N60 D31 SMD MARKING transistor smd marking ds TRANSISTOR SMD MARKING CODE df smd transistor ds
    Text: 06N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		SPD06N60C3 PG-TO252 Q67040-S4630 06N60C3 PG-TO252-3-1: PG-TO-252-3-11 06N60C3 DF marking code smd transistor TRANSISTOR SMD MARKING CODE G12 smd transistor marking g12 smd marking F62 06N60 D31 SMD MARKING transistor smd marking ds TRANSISTOR SMD MARKING CODE df smd transistor ds PDF

    TC1793

    Abstract: 6143d BTS500x0-1EGA BTS5264SF KP21x, KP22x piezo injector driver PG-TO220-7 bts500x0 50015-1TAA3 TLE 9221
    Text: PROFET & SPI Power Controller SPOC Duo Smart Power Switches in Automotive Heating Systems Source: [ www.beru.com ] [ www.infineon.com/profet ] [ www.infineon.com/spoc ] Source: [ www.beru.com ] 2 Contents Product Selection 04 Typical Automotive Applications


    Original     		PDF

    06N60E

    Abstract: FMV06N60E ic MARKING QG
    Text: DATE DRAWN Feb.-05-'08 CHECKED Feb.-05-'08 CHECKED Feb.-05-'08 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor


    Original     		FMV06N60E MS5F7026 H04-004-05 H04-004-03 06N60E FMV06N60E ic MARKING QG PDF

    06N60C3

    Abstract: PG-TO220-3-31 Q67040-S4631 SPA06N60C3
    Text: 06N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω I D1) 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		SPA06N60C3 P-TO220-3-31 PG-TO220-3-31 Q67040-S4631 06N60C3 06N60C3 PG-TO220-3-31 Q67040-S4631 SPA06N60C3 PDF

    06N60C3

    Abstract: Q67040-S4629 SPP06N60C3 smd transistor marking G12 marking code ff p SMD Transistor 06n60
    Text: 06N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		SPP06N60C3 PG-TO220-3-1 Q67040-S4629 06N60C3 06N60C3 Q67040-S4629 SPP06N60C3 smd transistor marking G12 marking code ff p SMD Transistor 06n60 PDF

    06N60C3

    Abstract: TRANSISTOR SMD MARKING CODE G12 Q67040-S4630
    Text: 06N60C3 TM CoolMOS Power Transistor Product Summary Features V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		SPD06N60C3 PG-TO252 Q67040-S4630 06N60C3 PG-TO252-3-1: PG-TO-252-3-11 06N60C3 TRANSISTOR SMD MARKING CODE G12 Q67040-S4630 PDF

    06N60

    Abstract: SPD06N60C3 SMD TRANSISTOR MARKING code DD infineon marking TO-252 06N60C3 Q67040-S4630 TRANSISTOR SMD MARKING CODE G12
    Text: 06N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		SPD06N60C3 PG-TO252 Q67040-S4630 06N60C3 06N60 SPD06N60C3 SMD TRANSISTOR MARKING code DD infineon marking TO-252 06N60C3 Q67040-S4630 TRANSISTOR SMD MARKING CODE G12 PDF

    06n60e

    Abstract: 06N60
    Text: DATE DRAWN Aug.-31-'07 CHECKED Aug.-31-'07 CHECKED Aug.-31-'07 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor


    Original     		August-31-2007 MS5F6908 FMP06N60E H04-004-05 H04-004-03 06n60e 06N60 PDF

    TC1724

    Abstract: tle 8760 GDI injector driver TDA 7368 tda 7718 TC1793 50010-1TAA1 dc-dc converter 50kW 100kW tc1782 TC1784
    Text: Driving the Future of Automotive Electronics Automotive System Solutions [ www.infineon.com/automotive ] 2 Contents Challenges and Trends 04 Safety-Aware System Solutions 06 Body System Solutions 18 Powertrain System Solutions 32 H EV System Solutions


    Original     		PDF

    06N60E

    Abstract: IRP10 06N60ES ic MARKING QG FMV06N60ES 06N60
    Text: DATE DRAWN Sep.-30-'08 CHECKED Sep.-30-'08 CHECKED Sep.-30-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor


    Original     		FMV06N60ES MS5F7218 H04-004-05 H04-004-03 06N60E IRP10 06N60ES ic MARKING QG FMV06N60ES 06N60 PDF

    06N60C3

    Abstract: DF marking code smd transistor 06N60 smd transistor marking G12 SMD TRANSISTOR MARKING code DD transistor smd marking ds SMD Diode V6 marking code SMD Transistor g12 T R TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE df
    Text: 06N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		SPP06N60C3 PG-TO220-3-1 Q67040-S4629 06N60C3 06N60C3 DF marking code smd transistor 06N60 smd transistor marking G12 SMD TRANSISTOR MARKING code DD transistor smd marking ds SMD Diode V6 marking code SMD Transistor g12 T R TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE df PDF

    d39 marking

    Abstract: 1620R
    Text: 06N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		SPP06N60C3 PG-TO220-3-1 Q67040-S4629 06N60C3 d39 marking 1620R PDF

    smd marking F62

    Abstract: 06N60 smd transistor marking G12
    Text: 06N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		SPD06N60C3 PG-TO252-3-1 Q67040-S4630 06N60C3 smd marking F62 06N60 smd transistor marking G12 PDF

    06N60C3

    Abstract: Q67040-S4630 SPD06N60C3 smd transistor marking G12 TRANSISTOR SMD MARKING CODE G12
    Text: 06N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		SPD06N60C3 P-TO252-3-1 Q67040-S4630 06N60C3 06N60C3 Q67040-S4630 SPD06N60C3 smd transistor marking G12 TRANSISTOR SMD MARKING CODE G12 PDF

    06n60

    Abstract: smd transistor marking G12 06N60C3 06n60c Q67040-S4629 SPP06N60C3 DF marking code smd transistor
    Text: 06N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		SPP06N60C3 P-TO220-3-1 Q67040-S4629 06N60C3 06n60 smd transistor marking G12 06N60C3 06n60c Q67040-S4629 SPP06N60C3 DF marking code smd transistor PDF

    DF 331 TRANSISTOR

    Abstract: 06N60C3 Q67040-S4631 SPA06N60C3
    Text: 06N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω I D1) 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		SPA06N60C3 P-TO220-3-31 Q67040-S4631 06N60C3 DF 331 TRANSISTOR 06N60C3 Q67040-S4631 SPA06N60C3 PDF

    06N60

    Abstract: Q67040-S4629 SPP06N60C3 06N60C3 smd transistor marking G12
    Text: 06N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		SPP06N60C3 PG-TO220 Q67040-S4629 06N60C3 06N60 Q67040-S4629 SPP06N60C3 06N60C3 smd transistor marking G12 PDF

    600V igbt dc to dc buck converter

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
    Text: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]


    Original     		B192-H6780-G11-X-7600 SP000008186 VDSL6100i-E 600V igbt dc to dc buck converter TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635 PDF

    tc1797ED

    Abstract: Infineon Tricore TC1797 TC1797 TC1768 ISO26262 Infineon Tricore TC1767 TC1767ED 77GHz Radar siemens nox sensor TC1767
    Text: Highly Integrated and Performance Optimized 32-bit microcontrollers for automotive and industrial applications [ www.infineon.com/TriCore ] 2 2 Contents Family Concept 04 TriCore -based Product Roadmap 07 Powertrain Applications 08 Safety Applications 12


    Original     		32-bit B158-H9282-X-X-7600 tc1797ED Infineon Tricore TC1797 TC1797 TC1768 ISO26262 Infineon Tricore TC1767 TC1767ED 77GHz Radar siemens nox sensor TC1767 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3VD393600YL 3VD393600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD393600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Advanced termination scheme to provide enhanced voltage-blocking capability.


    Original     		3VD393600YL 3VD393600YL O-220 06N60. PDF