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    06N60C3 Search Results

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    06N60C3 Price and Stock

    Rochester Electronics LLC SPP06N60C3XKSA1

    SPP06N60 - 600V COOLMOS N-CHANNE
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    DigiKey SPP06N60C3XKSA1 Bulk 3,964 247
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    • 1000 $1.22
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    Infineon Technologies AG SIPC06N60C3

    MOSFET COOL MOS 600V SAWED WAFER
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    DigiKey SIPC06N60C3 Bulk 1
    • 1 $2.27
    • 10 $1.456
    • 100 $0.99
    • 1000 $0.72602
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    Infineon Technologies AG SPD06N60C3ATMA1

    MOSFET N-CH 600V 6.2A TO252-3
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    DigiKey SPD06N60C3ATMA1 Reel 2,500
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    Avnet Americas SPD06N60C3ATMA1 Reel 15 Weeks 2,500
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    Mouser Electronics SPD06N60C3ATMA1
    • 1 $2.08
    • 10 $1.73
    • 100 $1.37
    • 1000 $0.988
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    Chip 1 Exchange SPD06N60C3ATMA1 10,033
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    EBV Elektronik SPD06N60C3ATMA1 16 Weeks 2,500
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    Infineon Technologies AG SPP06N60C3HKSA1

    MOSFET N-CH 650V 6.2A TO220-3
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    DigiKey SPP06N60C3HKSA1 Tube 500
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    EBV Elektronik SPP06N60C3HKSA1 25 Weeks 500
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    Infineon Technologies AG SPD06N60C3BTMA1

    MOSFET N-CH 650V 6.2A TO252-3
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    DigiKey SPD06N60C3BTMA1 Cut Tape
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    SPD06N60C3BTMA1 Reel
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    SPD06N60C3BTMA1 Digi-Reel 1
    • 1 $1.82
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    • 100 $1.82
    • 1000 $1.82
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    Chip 1 Exchange SPD06N60C3BTMA1 10,033
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    Find more 06N60C3 price and stock on Findchips.com

    06N60C3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor df 331

    Abstract: d39 marking
    Text: 06N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated V DS @ T j,max 650 V R DS on ,max 0.75 Ω I D1) 6.2 A • High peak current capability • Ultra low effective capacitances


    Original     		PDF SPA06N60C3 PG-TO220-3-31 SP000216301 06N60C3 transistor df 331 d39 marking

    SMD Transistor g12

    Abstract: No abstract text available
    Text: 06N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		PDF SPP06N60C3 PG-TO220-3-1 Q67040-S4629 06N60C3 SMD Transistor g12

    06N60C3

    Abstract: DF marking code smd transistor TRANSISTOR SMD MARKING CODE G12 smd transistor marking g12 smd marking F62 06N60 D31 SMD MARKING transistor smd marking ds TRANSISTOR SMD MARKING CODE df smd transistor ds
    Text: 06N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		PDF SPD06N60C3 PG-TO252 Q67040-S4630 06N60C3 PG-TO252-3-1: PG-TO-252-3-11 06N60C3 DF marking code smd transistor TRANSISTOR SMD MARKING CODE G12 smd transistor marking g12 smd marking F62 06N60 D31 SMD MARKING transistor smd marking ds TRANSISTOR SMD MARKING CODE df smd transistor ds

    06N60C3

    Abstract: PG-TO220-3-31 Q67040-S4631 SPA06N60C3
    Text: 06N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω I D1) 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		PDF SPA06N60C3 P-TO220-3-31 PG-TO220-3-31 Q67040-S4631 06N60C3 06N60C3 PG-TO220-3-31 Q67040-S4631 SPA06N60C3

    06N60C3

    Abstract: Q67040-S4629 SPP06N60C3 smd transistor marking G12 marking code ff p SMD Transistor 06n60
    Text: 06N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		PDF SPP06N60C3 PG-TO220-3-1 Q67040-S4629 06N60C3 06N60C3 Q67040-S4629 SPP06N60C3 smd transistor marking G12 marking code ff p SMD Transistor 06n60

    06N60C3

    Abstract: TRANSISTOR SMD MARKING CODE G12 Q67040-S4630
    Text: 06N60C3 TM CoolMOS Power Transistor Product Summary Features V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		PDF SPD06N60C3 PG-TO252 Q67040-S4630 06N60C3 PG-TO252-3-1: PG-TO-252-3-11 06N60C3 TRANSISTOR SMD MARKING CODE G12 Q67040-S4630

    06N60

    Abstract: SPD06N60C3 SMD TRANSISTOR MARKING code DD infineon marking TO-252 06N60C3 Q67040-S4630 TRANSISTOR SMD MARKING CODE G12
    Text: 06N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		PDF SPD06N60C3 PG-TO252 Q67040-S4630 06N60C3 06N60 SPD06N60C3 SMD TRANSISTOR MARKING code DD infineon marking TO-252 06N60C3 Q67040-S4630 TRANSISTOR SMD MARKING CODE G12

    06N60C3

    Abstract: DF marking code smd transistor 06N60 smd transistor marking G12 SMD TRANSISTOR MARKING code DD transistor smd marking ds SMD Diode V6 marking code SMD Transistor g12 T R TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE df
    Text: 06N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		PDF SPP06N60C3 PG-TO220-3-1 Q67040-S4629 06N60C3 06N60C3 DF marking code smd transistor 06N60 smd transistor marking G12 SMD TRANSISTOR MARKING code DD transistor smd marking ds SMD Diode V6 marking code SMD Transistor g12 T R TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE df

    d39 marking

    Abstract: 1620R
    Text: 06N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		PDF SPP06N60C3 PG-TO220-3-1 Q67040-S4629 06N60C3 d39 marking 1620R

    smd marking F62

    Abstract: 06N60 smd transistor marking G12
    Text: 06N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		PDF SPD06N60C3 PG-TO252-3-1 Q67040-S4630 06N60C3 smd marking F62 06N60 smd transistor marking G12

    06N60C3

    Abstract: Q67040-S4630 SPD06N60C3 smd transistor marking G12 TRANSISTOR SMD MARKING CODE G12
    Text: 06N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		PDF SPD06N60C3 P-TO252-3-1 Q67040-S4630 06N60C3 06N60C3 Q67040-S4630 SPD06N60C3 smd transistor marking G12 TRANSISTOR SMD MARKING CODE G12

    06n60

    Abstract: smd transistor marking G12 06N60C3 06n60c Q67040-S4629 SPP06N60C3 DF marking code smd transistor
    Text: 06N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		PDF SPP06N60C3 P-TO220-3-1 Q67040-S4629 06N60C3 06n60 smd transistor marking G12 06N60C3 06n60c Q67040-S4629 SPP06N60C3 DF marking code smd transistor

    DF 331 TRANSISTOR

    Abstract: 06N60C3 Q67040-S4631 SPA06N60C3
    Text: 06N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω I D1) 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		PDF SPA06N60C3 P-TO220-3-31 Q67040-S4631 06N60C3 DF 331 TRANSISTOR 06N60C3 Q67040-S4631 SPA06N60C3

    06N60

    Abstract: Q67040-S4629 SPP06N60C3 06N60C3 smd transistor marking G12
    Text: 06N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		PDF SPP06N60C3 PG-TO220 Q67040-S4629 06N60C3 06N60 Q67040-S4629 SPP06N60C3 06N60C3 smd transistor marking G12

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819

    Untitled

    Abstract: No abstract text available
    Text: 06N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		PDF SPD06N60C3 PG-TO252 SPD06N60C3BT) SPD06N60C3AT) Q67040-S4630 06N60C3

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		PDF B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265

    D1650

    Abstract: No abstract text available
    Text: 06N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω I D1) 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		PDF SPA06N60C3 PG-TO220-3-31 Q67040-S4631 06N60C3 D1650

    smd marking F62

    Abstract: 06N60C3 D31 SMD MARKING
    Text: 06N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		PDF SPP06N60C3 PG-TO220 Q67040-S4629 06N60C3 smd marking F62 06N60C3 D31 SMD MARKING

    Untitled

    Abstract: No abstract text available
    Text: 06N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω I D1) 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances


    Original     		PDF SPA06N60C3 P-TO220-3-31 PG-TO220-3-31 Q67040-S4631 06N60C3