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    06n60

    Abstract: 7a sf M6G DATASHEET
    Text: 3VD393600YL 3VD393600YL Ø MOSFET 3VD393600YL 600V N MOS Ø Ø Ø Ø TO-220 06N60 Ø AC-DC DC-DC H Ø 4.03mm*3.76mm Ø 300±20 m Ø Al PMW Au Tamb=25°C (TO-220 ) VDS 600 V VGS ±30 V ID 7 A PD 110 W TJ -55 +150 °C Tstg -55 +150 °C (Tamb=25°C) BVDSS VGS=0V


    Original     		PDF 3VD393600YL O-220 06N60 06n60 7a sf M6G DATASHEET

    Untitled

    Abstract: No abstract text available
    Text: 3VD393600YL 3VD393600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD393600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Advanced termination scheme to provide enhanced voltage-blocking capability.


    Original     		PDF 3VD393600YL 3VD393600YL O-220 06N60.