Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 1 20 REVISIONS ALL RIGHTS RESERVED. BY - P 60.8 1 4X ( 2.17 ) ( 19.25 ) ( 15 ) 2X ( 2 ) DWN APVD C7 REVISED PER ECO-12-016002 05SEP2012 DD DS C8 REVISED PER ECO-13-019565
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Original
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ECO-12-016002
05SEP2012
ECO-13-019565
12DEC2013
05MAR2010
22MAR2010
27APR2010
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PDF
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PCT-GF30-FR
Abstract: No abstract text available
Text: PRECI-DIP SA - Page 1 of 1 PGA / BGA / PLCC - INTERCONNECT PIN SOLDER TAIL Series 550 PGA / BGA / PLCC - Interconnect pin solder tail PGA Interconnect pin solder tail Pin grid array sockets, interconnect pin Technical specs.: Insulator: Flammability: Pin:
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Original
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PCT-GF30-FR
CuZn36Pb3
C36000)
17x17
550-PP-NNN-XX-XXX101
550-PP-NNN-X.
05-Sep-2011
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PDF
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STTH2002G
Abstract: No abstract text available
Text: STTH2002 Ultrafast recovery diode Features K A • Ultrafast switching ■ Low reverse current ■ Low thermal resistance ■ Reduces switching and conduction losses ■ High Tj ■ Insulating voltage: 2500 V rms ■ Capacitance: 7 pF K A A K Description K
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Original
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STTH2002
O-220AC
STTH2002D
O-220AC
O-220AC,
O-220ACins
STTH2002DI
STTH2002G
STTH2002G
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PDF
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Untitled
Abstract: No abstract text available
Text: Die Datasheet High Temperature Silicon Carbide Power Schottky Diode GB20SHT06-CAL VRRM o IF @ 25 C QC = = = 650 V 30 A 66 nC Features • 650 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge
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Original
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GB20SHT06-CAL
Mil-PRF-19500
GB20SHT06
46E-17
00E-05
26E-09
00E-10
00E-03
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PDF
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Untitled
Abstract: No abstract text available
Text: Die Datasheet High Temperature Silicon Carbide Power Schottky Diode GB20SHT12-CAL VRRM o IF @ 25 C QC = = = 1200 V 30 A 58 nC Features • 1200 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge
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Original
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GB20SHT12-CAL
Mil-PRF-19500
GB20SHT12
74E-13
68E-5
15E-09
00E-10
00E-03
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PDF
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Untitled
Abstract: No abstract text available
Text: Die Datasheet GB05SHT06-CAL High Temperature Silicon Carbide Power Schottky Diode VRRM o IF @ 25 C QC = = = 650 V 8A 20 nC Features • 650 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge
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Original
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GB05SHT06-CAL
Mil-PRF-19500
GB05SHT06
99E-17
87E-05
38E-10
00E-10
00E-03
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PDF
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Untitled
Abstract: No abstract text available
Text: Die Datasheet High Temperature Silicon Carbide Power Schottky Diode GB05SHT12-CAU VRRM o IF @ 25 C QC = = = 1200 V 8A 17 nC Features • 1200 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge
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Original
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GB05SHT12-CAU
Mil-PRF-19500
GB05SHT12
45E-15
00E-10
00E-03
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PDF
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GB05SHT12-CAU SPICE
Abstract: high-temperature-sic-bare-die
Text: Die Datasheet GB05SHT12-CAU SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB05SHT12-CAU. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * *
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Original
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GB05SHT12-CAU
GB05SHT12-CAU.
05-SEP-2013
GB05Smperature
GB05SHT12
45E-15
00E-10
GB05SHT12-CAU SPICE
high-temperature-sic-bare-die
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N8030-GA High Temperature Silicon Carbide Power Schottky Diode VRRM IF QC Features Package • RoHS Compliant 650 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge
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Original
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1N8030-GA
Mil-PRF-19500
1N8030
57E-18
40E-05
12E-11
00E-10
00E-03
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PDF
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Untitled
Abstract: No abstract text available
Text: Die Datasheet GA01PNS100-CAU Silicon Carbide PiN Diode Chip VRRM IF @ 25 oC QC = = = 10000 V 2A 5 nC Features • 10 kV blocking 250 °C operating temperature Fast turn off characteristics Soft reverse recovery characteristics Ultra-Fast high temperature switching
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Original
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GA01PNS100-CAU
GA01PNS100-CAU
GA01PNS100
00E-25
28E-11
00E-03
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PDF
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GB20SHT12-CAL SPICE
Abstract: high-temperature-sic-bare-die
Text: Die Datasheet GB20SHT12-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB20SHT12-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * *
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Original
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GB20SHT12-CAL
GB20SHT12-CAL.
05-SEP-2013
GB20SATHODE
GB20SHT12
74E-13
68E-5
15E-09
GB20SHT12-CAL SPICE
high-temperature-sic-bare-die
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PDF
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Untitled
Abstract: No abstract text available
Text: Die Datasheet GB01SHT06-CAU High Temperature Silicon Carbide Power Schottky Diode VRRM o IF @ 25 C QC = = = 650 V 2.5 A 7 nC Features • 650 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge
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Original
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GB01SHT06-CAU
Mil-PRF-19500
GB01SHT06
57E-18
40E-05
12E-11
00E-10
00E-03
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PDF
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Untitled
Abstract: No abstract text available
Text: Die Datasheet High Temperature Silicon Carbide Power Schottky Diode GB20SHT12-CAU VRRM o IF @ 25 C QC = = = 1200 V 30 A 58 nC Features • 1200 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge
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Original
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GB20SHT12-CAU
Mil-PRF-19500
GB20SHT12
74E-13
68E-5
15E-09
00E-10
00E-03
|
PDF
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Untitled
Abstract: No abstract text available
Text: 1N8024-GA High Temperature Silicon Carbide Power Schottky Diode VRRM IF Tc=25°C QC Features Package • RoHS Compliant 1200 V Schottky rectifier 250°C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge
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Original
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1N8024-GA
Mil-PRF-19500
1N8024
88E-18
90E-11
00E-10
00E-03
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: 1N8030-GA High Temperature Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package • RoHS Compliant 650 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge
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Original
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1N8030-GA
Mil-PRF-19500
1N8030
57E-18
40E-05
12E-11
00E-10
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STTH200L04TV1 Ultrafast high voltage rectifier Features • Ultrafast switching ■ Low reverse current A1 K1 ■ Low thermal resistance A2 K2 ■ Reduces switching and conduction losses ■ Package insulation voltage: 2500 VRMS K1 A1 Description K2 The STTH200L04TV1 uses ST 400 V technology
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Original
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STTH200L04TV1
STTH200L04TV1
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PDF
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Untitled
Abstract: No abstract text available
Text: SCS521DZ 0.1A , 30V Surface Mount Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DFN0201 FEATURES Small Surface Mounting Type Low Reverse Current and Low Forward Voltage High Reliability
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Original
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SCS521DZ
DFN0201
15REF.
05-Sep-2013
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PDF
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Untitled
Abstract: No abstract text available
Text: M24C64-A125 Automotive 64-Kbit serial I²C bus EEPROM with 1 MHz clock Datasheet - production data Features • Compatible with all I2C bus modes – 1 MHz – 400 kHz – 100 kHz TSSOP8 DW 169 mil width • Memory array – 64 Kbit (8 Kbytes) of EEPROM
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Original
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M24C64-A125
64-Kbit
DocID023023
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PDF
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801-PP-NNN-10-001101
Abstract: No abstract text available
Text: PRECI-DIP SA - Page 1 of 1 PCB CONNECTORS - STRAIGHT SOLDER TAIL Series 801 PCB Connectors - Straight solder tail Single row 2.54/5.08 mm, Straight solder tail, Mating pin Ø 0.76 mm Socket connectors, solder tail Ordering information RoHS-compliant parts
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Original
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PCT-GF30-FR
CuZn36Pb3
C36000)
C17200)
801-87-NNN-10-143101
801-PP-NNN-10-001101
801-PP-NNN-10.
801-PP-NNN-10-001101
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PDF
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Untitled
Abstract: No abstract text available
Text: 2 THIS DRAWI NG IS UNPUBLISHED. RELEASED ALL C O P Y R I G H T 20 F OR 20 PUBLICATIO N RIGHTS L OC RESERVED. REVISIONS DIST 00 GP LTR DESCRIPTIO N REVISED HOUSING: CONTACT: REF 6 -z4.4 8.6 REF 0 .2 t OF X V © 05SEP201 I E C O - 1 1- 0 0 3 2 7 1 LCP, UL94V0,
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OCR Scan
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05SEP201
UL94V0,
I3NQV2002
I8NOV2002
I8NOV2002
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PDF
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Untitled
Abstract: No abstract text available
Text: 2 THI S C DRAWI NG IS U NP U B L I S HE D. R E L E A S E D FOR P U B L I C A T I O N ALL C OP YRI GHT 20 RI GHTS 20 LOC R ES ERVE D. GP REVISIONS DIST 00 P LTR c DATE R E V I S E D PER E C O - 1 1 - 0 0 3 2 7 1 DWN 05SEP201 1 HMR APVD AS 0.73 HOUSI NG 4.4
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OCR Scan
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05SEP2011
23FEB2006
07SEP2007
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PDF
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Untitled
Abstract: No abstract text available
Text: 2 THIS DRAWI NG IS UNPUBLISHED. RELEASED F OR ALL C O P Y R I G H T 20 PUBLICATIO N RIGHTS 20 L OC RESERVED. GP REVISIONS DIST 00 LTR DESCRIPTIO N DATE DWN 05SEP201 I R E V I S E D P E R E C O - 1 1- 0 0 3 2 7 1 HMR APVD AS 2 8 . 68 1 H O U S I NG 4.4 8.6
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OCR Scan
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05SEP201
UL94V0,
I8NOV2002
I8NOV2002
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PDF
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Untitled
Abstract: No abstract text available
Text: 2 THIS DRAWI NG IS UNPUBLISHED. RELEASED ALL C O P Y R I G H T 20 F OR PUBLICATIO N RIGHTS 20 L OC RESERVED. GP DIST REVISIONS 00 LTR DESCRIPTIO N REVISED HOUSING: CONTACT: PER DATE 05SEP201 I E C O - 1 1- 0 0 3 2 7 1 LCP, UL94V0, COLOR: PHOSPHOR B R ONZ E .
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OCR Scan
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05SEP201
UL94V0,
I50CT2002
150CT2002
150CT2002
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PDF
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180984-0
Abstract: 180984-1
Text: THIS DRAWI NG IS COPYRIGHT UNPUBLISHED. 2002 Tyco RELEASED E le c t r o n i c s A MP G mb H FOR ALL PUBLICATION RIGHTS L OC DIST R E V IS IO N S RESERVED. DESCRIPTION TE AMP DO BRASIL VARIATION S E C T I ON TE AMP SPAIN VARIATION P/N .s INVOLVED: - I80984-0
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OCR Scan
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I80984-0
I80984-
I80984-2
05SEP201
8SEP200;
180984-0
180984-1
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PDF
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