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    Untitled

    Abstract: No abstract text available
    Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 1 20 REVISIONS ALL RIGHTS RESERVED. BY - P 60.8 1 4X ( 2.17 ) ( 19.25 ) ( 15 ) 2X ( 2 ) DWN APVD C7 REVISED PER ECO-12-016002 05SEP2012 DD DS C8 REVISED PER ECO-13-019565


    Original     		PDF ECO-12-016002 05SEP2012 ECO-13-019565 12DEC2013 05MAR2010 22MAR2010 27APR2010

    PCT-GF30-FR

    Abstract: No abstract text available
    Text: PRECI-DIP SA - Page 1 of 1 PGA / BGA / PLCC - INTERCONNECT PIN SOLDER TAIL Series 550 PGA / BGA / PLCC - Interconnect pin solder tail PGA Interconnect pin solder tail Pin grid array sockets, interconnect pin Technical specs.: Insulator: Flammability: Pin:


    Original     		PDF PCT-GF30-FR CuZn36Pb3 C36000) 17x17 550-PP-NNN-XX-XXX101 550-PP-NNN-X. 05-Sep-2011

    STTH2002G

    Abstract: No abstract text available
    Text: STTH2002 Ultrafast recovery diode Features K A • Ultrafast switching ■ Low reverse current ■ Low thermal resistance ■ Reduces switching and conduction losses ■ High Tj ■ Insulating voltage: 2500 V rms ■ Capacitance: 7 pF K A A K Description K


    Original     		PDF STTH2002 O-220AC STTH2002D O-220AC O-220AC, O-220ACins STTH2002DI STTH2002G STTH2002G

    Untitled

    Abstract: No abstract text available
    Text: Die Datasheet High Temperature Silicon Carbide Power Schottky Diode GB20SHT06-CAL VRRM o IF @ 25 C QC = = = 650 V 30 A 66 nC Features •        650 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge


    Original     		PDF GB20SHT06-CAL Mil-PRF-19500 GB20SHT06 46E-17 00E-05 26E-09 00E-10 00E-03

    Untitled

    Abstract: No abstract text available
    Text: Die Datasheet High Temperature Silicon Carbide Power Schottky Diode GB20SHT12-CAL VRRM o IF @ 25 C QC = = = 1200 V 30 A 58 nC Features •        1200 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge


    Original     		PDF GB20SHT12-CAL Mil-PRF-19500 GB20SHT12 74E-13 68E-5 15E-09 00E-10 00E-03

    Untitled

    Abstract: No abstract text available
    Text: Die Datasheet GB05SHT06-CAL High Temperature Silicon Carbide Power Schottky Diode VRRM o IF @ 25 C QC = = = 650 V 8A 20 nC Features •        650 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge


    Original     		PDF GB05SHT06-CAL Mil-PRF-19500 GB05SHT06 99E-17 87E-05 38E-10 00E-10 00E-03

    Untitled

    Abstract: No abstract text available
    Text: Die Datasheet High Temperature Silicon Carbide Power Schottky Diode GB05SHT12-CAU VRRM o IF @ 25 C QC = = = 1200 V 8A 17 nC Features •        1200 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge


    Original     		PDF GB05SHT12-CAU Mil-PRF-19500 GB05SHT12 45E-15 00E-10 00E-03

    GB05SHT12-CAU SPICE

    Abstract: high-temperature-sic-bare-die
    Text: Die Datasheet GB05SHT12-CAU SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB05SHT12-CAU. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * *


    Original     		PDF GB05SHT12-CAU GB05SHT12-CAU. 05-SEP-2013 GB05Smperature GB05SHT12 45E-15 00E-10 GB05SHT12-CAU SPICE high-temperature-sic-bare-die

    Untitled

    Abstract: No abstract text available
    Text: 1N8030-GA High Temperature Silicon Carbide Power Schottky Diode VRRM IF QC Features Package •          RoHS Compliant 650 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge


    Original     		PDF 1N8030-GA Mil-PRF-19500 1N8030 57E-18 40E-05 12E-11 00E-10 00E-03

    Untitled

    Abstract: No abstract text available
    Text: Die Datasheet GA01PNS100-CAU Silicon Carbide PiN Diode Chip VRRM IF @ 25 oC QC = = = 10000 V 2A 5 nC Features •     10 kV blocking 250 °C operating temperature Fast turn off characteristics Soft reverse recovery characteristics Ultra-Fast high temperature switching


    Original     		PDF GA01PNS100-CAU GA01PNS100-CAU GA01PNS100 00E-25 28E-11 00E-03

    GB20SHT12-CAL SPICE

    Abstract: high-temperature-sic-bare-die
    Text: Die Datasheet GB20SHT12-CAL SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GB20SHT12-CAL. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * *


    Original     		PDF GB20SHT12-CAL GB20SHT12-CAL. 05-SEP-2013 GB20SATHODE GB20SHT12 74E-13 68E-5 15E-09 GB20SHT12-CAL SPICE high-temperature-sic-bare-die

    Untitled

    Abstract: No abstract text available
    Text: Die Datasheet GB01SHT06-CAU High Temperature Silicon Carbide Power Schottky Diode VRRM o IF @ 25 C QC = = = 650 V 2.5 A 7 nC Features •        650 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge


    Original     		PDF GB01SHT06-CAU Mil-PRF-19500 GB01SHT06 57E-18 40E-05 12E-11 00E-10 00E-03

    Untitled

    Abstract: No abstract text available
    Text: Die Datasheet High Temperature Silicon Carbide Power Schottky Diode GB20SHT12-CAU VRRM o IF @ 25 C QC = = = 1200 V 30 A 58 nC Features •        1200 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge


    Original     		PDF GB20SHT12-CAU Mil-PRF-19500 GB20SHT12 74E-13 68E-5 15E-09 00E-10 00E-03

    Untitled

    Abstract: No abstract text available
    Text: 1N8024-GA High Temperature Silicon Carbide Power Schottky Diode VRRM IF Tc=25°C QC Features Package •          RoHS Compliant 1200 V Schottky rectifier 250°C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge


    Original     		PDF 1N8024-GA Mil-PRF-19500 1N8024 88E-18 90E-11 00E-10 00E-03

    Untitled

    Abstract: No abstract text available
    Text: 1N8030-GA High Temperature Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •          RoHS Compliant 650 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge


    Original     		PDF 1N8030-GA Mil-PRF-19500 1N8030 57E-18 40E-05 12E-11 00E-10

    Untitled

    Abstract: No abstract text available
    Text: STTH200L04TV1 Ultrafast high voltage rectifier Features • Ultrafast switching ■ Low reverse current A1 K1 ■ Low thermal resistance A2 K2 ■ Reduces switching and conduction losses ■ Package insulation voltage: 2500 VRMS K1 A1 Description K2 The STTH200L04TV1 uses ST 400 V technology


    Original     		PDF STTH200L04TV1 STTH200L04TV1

    Untitled

    Abstract: No abstract text available
    Text: SCS521DZ 0.1A , 30V Surface Mount Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DFN0201 FEATURES Small Surface Mounting Type Low Reverse Current and Low Forward Voltage High Reliability


    Original     		PDF SCS521DZ DFN0201 15REF. 05-Sep-2013

    Untitled

    Abstract: No abstract text available
    Text: M24C64-A125 Automotive 64-Kbit serial I²C bus EEPROM with 1 MHz clock Datasheet - production data Features • Compatible with all I2C bus modes – 1 MHz – 400 kHz – 100 kHz TSSOP8 DW 169 mil width • Memory array – 64 Kbit (8 Kbytes) of EEPROM


    Original     		PDF M24C64-A125 64-Kbit DocID023023

    801-PP-NNN-10-001101

    Abstract: No abstract text available
    Text: PRECI-DIP SA - Page 1 of 1 PCB CONNECTORS - STRAIGHT SOLDER TAIL Series 801 PCB Connectors - Straight solder tail Single row 2.54/5.08 mm, Straight solder tail, Mating pin Ø 0.76 mm Socket connectors, solder tail Ordering information RoHS-compliant parts


    Original     		PDF PCT-GF30-FR CuZn36Pb3 C36000) C17200) 801-87-NNN-10-143101 801-PP-NNN-10-001101 801-PP-NNN-10. 801-PP-NNN-10-001101

    Untitled

    Abstract: No abstract text available
    Text: 2 THIS DRAWI NG IS UNPUBLISHED. RELEASED ALL C O P Y R I G H T 20 F OR 20 PUBLICATIO N RIGHTS L OC RESERVED. REVISIONS DIST 00 GP LTR DESCRIPTIO N REVISED HOUSING: CONTACT: REF 6 -z4.4 8.6 REF 0 .2 t OF X V © 05SEP201 I E C O - 1 1- 0 0 3 2 7 1 LCP, UL94V0,


    OCR Scan     		PDF 05SEP201 UL94V0, I3NQV2002 I8NOV2002 I8NOV2002

    Untitled

    Abstract: No abstract text available
    Text: 2 THI S C DRAWI NG IS U NP U B L I S HE D. R E L E A S E D FOR P U B L I C A T I O N ALL C OP YRI GHT 20 RI GHTS 20 LOC R ES ERVE D. GP REVISIONS DIST 00 P LTR c DATE R E V I S E D PER E C O - 1 1 - 0 0 3 2 7 1 DWN 05SEP201 1 HMR APVD AS 0.73 HOUSI NG 4.4


    OCR Scan     		PDF 05SEP2011 23FEB2006 07SEP2007

    Untitled

    Abstract: No abstract text available
    Text: 2 THIS DRAWI NG IS UNPUBLISHED. RELEASED F OR ALL C O P Y R I G H T 20 PUBLICATIO N RIGHTS 20 L OC RESERVED. GP REVISIONS DIST 00 LTR DESCRIPTIO N DATE DWN 05SEP201 I R E V I S E D P E R E C O - 1 1- 0 0 3 2 7 1 HMR APVD AS 2 8 . 68 1 H O U S I NG 4.4 8.6


    OCR Scan     		PDF 05SEP201 UL94V0, I8NOV2002 I8NOV2002

    Untitled

    Abstract: No abstract text available
    Text: 2 THIS DRAWI NG IS UNPUBLISHED. RELEASED ALL C O P Y R I G H T 20 F OR PUBLICATIO N RIGHTS 20 L OC RESERVED. GP DIST REVISIONS 00 LTR DESCRIPTIO N REVISED HOUSING: CONTACT: PER DATE 05SEP201 I E C O - 1 1- 0 0 3 2 7 1 LCP, UL94V0, COLOR: PHOSPHOR B R ONZ E .


    OCR Scan     		PDF 05SEP201 UL94V0, I50CT2002 150CT2002 150CT2002

    180984-0

    Abstract: 180984-1
    Text: THIS DRAWI NG IS COPYRIGHT UNPUBLISHED. 2002 Tyco RELEASED E le c t r o n i c s A MP G mb H FOR ALL PUBLICATION RIGHTS L OC DIST R E V IS IO N S RESERVED. DESCRIPTION TE AMP DO BRASIL VARIATION S E C T I ON TE AMP SPAIN VARIATION P/N .s INVOLVED: - I80984-0


    OCR Scan     		PDF I80984-0 I80984- I80984-2 05SEP201 8SEP200; 180984-0 180984-1