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    Amphenol PCTEL MUF4505NGP

    RF ANT 460MHZ WHIP STR MAGN
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    RS MUF4505NGP Bulk 7 Weeks 25
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    Richardson RFPD MUF4505NGP 1
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    Master Electronics MUF4505NGP 20
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    OMRON Industrial Automation D4A-3105N-GM

    SWITCH SNAP ACTION SPDT 10A 125V
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    DigiKey D4A-3105N-GM Box 8 1
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    RS D4A-3105N-GM Bulk 1
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    OMRON Industrial Automation D4A-3E05N-GM

    SWITCH SNAP ACTION SPDT 10A 125V
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    DigiKey D4A-3E05N-GM Box 2 1
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    Newark D4A-3E05N-GM Bulk 4 1
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    Texas Instruments UCC3805NG4

    IC REG CTRLR MULT TOPOLOGY 8DIP
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    Rochester Electronics LLC MC74AC05NG

    IC INVERTER 6CH 1-INP 14DIP
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    DigiKey MC74AC05NG Tube 1,158
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    05NG Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    369D

    Abstract: NTD5805NG NTD5805NT4G W473 5805N
    Text: NTD5805N Power MOSFET 40 V, 51 A, Single N−Channel, DPAK Features Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage − Continuous


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    NTD5805N NTD5805N/D 369D NTD5805NG NTD5805NT4G W473 5805N PDF

    NVD5805NT4G

    Abstract: NVD5805N
    Text: NTD5805N, NVD5805N Power MOSFET 40 V, 51 A, Single N−Channel, DPAK Features • • • • • Low RDS on High Current Capability Avalanche Energy Specified NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101


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    NTD5805N, NVD5805N AEC-Q101 NTD5805N/D NVD5805NT4G PDF

    369D

    Abstract: NTD5805NG NTD5805NT4G CCFL backlight driver 05ng
    Text: NTD5805N Power MOSFET 40 V, 51 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage − Continuous


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    NTD5805N NTD5805N/D 369D NTD5805NG NTD5805NT4G CCFL backlight driver 05ng PDF

    4805ng

    Abstract: 369D NTD4805N
    Text: NTD4805N Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


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    NTD4805N NTD4805N/D 4805ng 369D NTD4805N PDF

    369D

    Abstract: NTD4805N mosfet K 2865
    Text: NTD4805N Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com V(BR)DSS


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    NTD4805N NTD4805N/D 369D NTD4805N mosfet K 2865 PDF

    369D

    Abstract: NTD4905NT4G ntd4905 S2340 05ng
    Text: NTD4905N Power MOSFET 30 V, 67 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original
    NTD4905N NTD4905N/D 369D NTD4905NT4G ntd4905 S2340 05ng PDF

    369D

    Abstract: NTD4805N NTD4805NT4G
    Text: NTD4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original
    NTD4805N NTD4805N/D 369D NTD4805N NTD4805NT4G PDF

    369AA

    Abstract: No abstract text available
    Text: NTD4805N, NVD4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features •     Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4805N


    Original
    NTD4805N, NVD4805N AEC-Q101 NTD4805/D 369AA PDF

    NVD5805N

    Abstract: No abstract text available
    Text: NTD5805N, NVD5805N Power MOSFET 40 V, 51 A, Single N−Channel, DPAK Features • • • • • Low RDS on High Current Capability Avalanche Energy Specified NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101


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    NTD5805N, NVD5805N NTD5805N/D NVD5805N PDF

    4805N

    Abstract: No abstract text available
    Text: NTD4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original
    NTD4805N NTD4805N/D 4805N PDF

    Untitled

    Abstract: No abstract text available
    Text: NTD4905N Power MOSFET 30 V, 67 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


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    NTD4905N NTD4905N/D PDF

    369D

    Abstract: NTD4905NT4G
    Text: NTD4905N Power MOSFET 30 V, 67 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


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    NTD4905N NTD4905N/D 369D NTD4905NT4G PDF

    5805N

    Abstract: 369D NTD5805NG NTD5805NT4G
    Text: NTD5805N Power MOSFET 40 V, 51 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage − Continuous


    Original
    NTD5805N NTD5805N/D 5805N 369D NTD5805NG NTD5805NT4G PDF

    Untitled

    Abstract: No abstract text available
    Text: NTD4805N, NVD4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4805N


    Original
    NTD4805N, NVD4805N AEC-Q101 NTD4805N/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NTD4805N, NVD4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4805N


    Original
    NTD4805N, NVD4805N NTD4805N/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NTD4805N, NVD4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring


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    NTD4805N, NVD4805N NTD4805N/D PDF

    NTD5805NT4G

    Abstract: NVD5805N
    Text: NTD5805N, NVD5805N Power MOSFET 40 V, 51 A, Single N−Channel, DPAK Features • • • • • Low RDS on High Current Capability Avalanche Energy Specified NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101


    Original
    NTD5805N, NVD5805N NTD5805N/D NTD5805NT4G NVD5805N PDF

    05NG

    Abstract: 369D NTD4805N NTD4805NT4G 836 DIODE
    Text: NTD4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original
    NTD4805N NTD4805N/D 05NG 369D NTD4805N NTD4805NT4G 836 DIODE PDF

    Untitled

    Abstract: No abstract text available
    Text: NTD4905N Power MOSFET 30 V, 67 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original
    NTD4905N NTD4905N/D PDF