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    SMV1204

    Abstract: SMV1200-02 SMV1200-04 SMV1200-05 SMV1200-07 SMV1201-16 SMV1201-20 SMV1204-99 SMV1411
    Text: Surface-Mounted Varactor and Multiplier Devices and Capacitors alpha IN] / SEMICONDUCTOR 4AE D 05A5443 0001334 40f l T -& 7-h *A LP Features • ■ ■ ■ ■ Description The traditional quality of Alpha varactor devices is available for volume production operations in the form of


    OCR Scan     		PDF OT-23 SMV1204-05 SMV1204-99 SMV1204-99. SMV1204 SMV1200-02 SMV1200-04 SMV1200-05 SMV1200-07 SMV1201-16 SMV1201-20 SMV1411

    Untitled

    Abstract: No abstract text available
    Text: ALPHA IN»/ SEMICONDUCTOR 4ÛE 1> • 05A5443 D0D1133 7QT ■ ALP " T ‘O ' 1 ^ 7 High Frequency SOT’s Features: ■ Industry Standard Footprint ■ High Frequency Performance ■ ■ ■ Optimized Series Resistance Tape and Reel for Pick & Place 100% DC Tested


    OCR Scan     		PDF 05A5443 D0D1133 SMS3989 SMS3988 SMS1526-20 SMS1526-15 SMS1526-10

    HP STEP RECOVERY DIODES

    Abstract: construction of varactor diode varactor diode application "Step Recovery Diode" M92A DVA6735-12 DVA6735-18 DVA6735-24 DVA6736-06 DVA6736-12
    Text: A-Mode Multiplier Diodes, Multichip A-Mode Diodes, A-Mode Chips - ALPHA INI/ S E U I C O N D U C T O R USE J 05A5443 DDQ1374 Gc14 • ALP Features ■ High Efficiency ■ High Power Handling ■ High Reliability Description Alpha A-Mode diodes are oxide passivated, epitaxial


    OCR Scan     		PDF 05A5443 DVA6738-06 DVA6738-12 DVA6738-18 DVA6738-24 DVA6738-30 HP STEP RECOVERY DIODES construction of varactor diode varactor diode application "Step Recovery Diode" M92A DVA6735-12 DVA6735-18 DVA6735-24 DVA6736-06 DVA6736-12

    DDB-4503

    Abstract: KA band detector
    Text: 0585443 ALPHA ~0Ì IND/ SEMICONDUCTOR 03E 00 37 3 T-07-0 7 D eT | 05A5443 0D0D373 4 Silicon Schottky Barrier Detector Diodes -u r- • f e : '/- .- /- •: > Features • Low 1/f Noise • Bonded Junctions for Reliability • Planar Passivated Beam-Lead and Chip Construction


    OCR Scan     		PDF T-07-0 05A5443 0D0D373 0a37L, DDB-4503 KA band detector

    Untitled

    Abstract: No abstract text available
    Text: GaAs MMIC 2 Watt High Linearity ËBÀlph Cellular SPDT Switch DC-2000 MHz A S 1 16-59 Features • High Linearity 50 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Extremely Low Cost ■ Requires Fixed Positive Bias ■


    OCR Scan     		PDF DC-2000 of-31 AK006L1-01 AS004M2-11 AT002N5-00 AK006L1-10 AS004R2-08 AT002N5-01 AK006M1-00 AS004R2-11

    DMJ3086

    Abstract: DMJ4317 DME4750-000 DMF3068-000 mip 290 dmf5818 DMF6554-000 DME3040-000 DMJ3181-000 DMF3291-000
    Text: ALPHA IN»/ S E M I C O N D U C T O R 33E D • Q S 6 S H M B 0 0 0 0 7 5 4 7 ■ ALP Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes : ^ L Features \ ■ Ideal for MIC Low 1/f Noise Low Intermodi Intermodulation Distortion Low Turn On Hermetically Sealed Packages


    OCR Scan     		PDF DMV3946-000 DMB4500-000 DMB4501-000 DMB6780-000 DMB3000-000 DMB6782-000 DMB3001-000 DMB6781-000 DMB3003-000 DMB3004-000 DMJ3086 DMJ4317 DME4750-000 DMF3068-000 mip 290 dmf5818 DMF6554-000 DME3040-000 DMJ3181-000 DMF3291-000

    DKV3803-30

    Abstract: DKV6520 adkv LA 6520 DKV6520-06 DKV6520-12 DKV6525-06 DKV6525-12 dkv3803-23 DKV6522-24
    Text: Silicon Hyperabrupt Tuning Diodes DKV6520 Series ALPHA IN] / S E M I C O N D U C T O R 4fiE D 05Ô5443 Q Q D 1 3 n ITI IALP Features • ■ ■ ■ High to Very High Frequency Operation Capacitance Values of 20 pF to 200 pF at 4 Volts Octave Tuning from 4 to 20 Volts


    OCR Scan     		PDF DKV6520 CKV2020 DKV3801 DKV3802 DKV3803 DKV3804 QQD13n DKV3802-26 DKV3802-27 DKV3803-30 adkv LA 6520 DKV6520-06 DKV6520-12 DKV6525-06 DKV6525-12 dkv3803-23 DKV6522-24

    AD004T2-00

    Abstract: AD004T2-11 AK006R2-01 AK006R2-10 AS006M1-01 AS006M1-10 AS116-59
    Text: GaAs MMIC 2 Watt High Linearity Cellular SPDT Switch DC-2000 MHz Ë B Â Îp fi A S 1 16-59 Features • High Linearity 50 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■o J2 ■ Extremely Low Cost ■ Requires Fixed Positive Bias


    OCR Scan     		PDF DC-2000 AS116-59 applications32 AS004M1-08 AT001D4-31 AK004R2-11 AS004M1-11 AT001D6-31 AD004T2-00 AD004T2-11 AK006R2-01 AK006R2-10 AS006M1-01 AS006M1-10

    Untitled

    Abstract: No abstract text available
    Text: EUAIph Surface Mount GaAs MESFET AF100-32 Features • High Gain, 16 dB at 4 GHz, 7.0 dB at 12 GHz ■ Low Noise Figure, 0.55 dB at 4 GHz, 2.2 dB at 12 GHz ■ Ti/Pt/Au Gates ■ Passivated Device ■ Surface Mount Package ■ Available in Tape and Reel Description


    OCR Scan     		PDF AF100-32 AF100-32 SpecificatioT002D8-31 AK006L1-01 AS004M2-11 AT002N5-00 AK006L1-10 AS004R2-08 AT002N5-01 AK006M1-00

    180 Degree hybrid ku band

    Abstract: No abstract text available
    Text: Universal Chip Mixer and Detector SchotUcy Barrier Diodes EBAIph CDX76XX, CME7660 Features • For Microwave M IC Assembly ■ Mechanically Rugged Design Exceeds MIL 883 Wire Bond Specifications for Hybrid Assembly ■ Optimized Barrier Heights for Mixer and Detector


    OCR Scan     		PDF CDX76XX, CME7660 AS004L2-11 AT001D3â AK004M2-11 AS004M1-08 AT001D4-31 AK004R2-11 AS004M1-11 AT001D6-31 180 Degree hybrid ku band

    1N23 diode

    Abstract: 1N23 1N53AR 1n3747 1N1132 1N53R 1N415C 1n415 1N26 1N23 ALPHA
    Text: ALPHA IN»/ SEMICONDUCTOR MAE D • 0SAS443 00011b3 447 ■ ALP Silicon Point Contact Mixer Diodes Description Alpha’s point contact mixer diodes are designed for applications through Ka-band 40 GHz . These diodes employ epitaxial silicon optimized for low noise figure


    OCR Scan     		PDF