M29W320DT
Abstract: M29W320D M29W320DB TFBGA48
Text: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns
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M29W320DT
M29W320DB
TSOP48
TFBGA63
TFBGA48
M29W320DT
M29W320D
M29W320DB
TFBGA48
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M29F016D
Abstract: No abstract text available
Text: M29F016D 16 Mbit 2Mb x8, Uniform Block 5V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 5V ±10% for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55, 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte typical
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M29F016D
64Kbyte
TSOP40
M29F016D
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M29W017D
Abstract: TFBGA48
Text: M29W017D 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte typical
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M29W017D
TSOP40
TFBGA48
M29W017D
TFBGA48
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Untitled
Abstract: No abstract text available
Text: M29W320DT M29W320DB 32 Mbit 4Mbx8 or 2Mbx16, Non-uniform Parameter Blocks, Boot Block , 3V Supply Flash memory Feature summary Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) Access time: 70, 90ns
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M29W320DT
M29W320DB
2Mbx16,
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M29W320DT
Abstract: Numonyx JESD97 M29W320D M29W320DB TFBGA48
Text: M29W320DT M29W320DB 32 Mbit 4Mbx8 or 2Mbx16, Non-uniform Parameter Blocks, Boot Block , 3V Supply Flash memory Feature summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Access time: 70, 90ns
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M29W320DT
M29W320DB
2Mbx16,
M29W320DT
Numonyx
JESD97
M29W320D
M29W320DB
TFBGA48
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JESD97
Abstract: M29F016D A12A20
Text: M29F016D 16 Mbit 2Mb x8, Uniform Block 5V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 5V ±10% for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55, 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte typical ■
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M29F016D
64Kbyte
TSOP40
JESD97
M29F016D
A12A20
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M29W160DB
Abstract: M29W160DT TFBGA48
Text: M29W160DT M29W160DB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical
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M29W160DT
M29W160DB
TSOP48
M29W160DB
M29W160DT
TFBGA48
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JESD97
Abstract: M29F080D
Text: M29F080D 8 Mbit 1Mb x8, Uniform Block 5V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 5V ±10% for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55, 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte typical ■
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M29F080D
64Kbyte
TSOP40
JESD97
M29F080D
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TSOP48 outline
Abstract: M29W160DB M29W160DT TFBGA48 A/M29F010B(45/70/90/MT352/CG/M29W160DT
Text: M29W160DT M29W160DB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical
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M29W160DT
M29W160DB
TSOP48
TSOP48 outline
M29W160DB
M29W160DT
TFBGA48
A/M29F010B(45/70/90/MT352/CG/M29W160DT
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1N914
Abstract: A0-A21 M29F032D
Text: M29F032D 32 Mbit 4Mb x8, Uniform Block 5V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 5V ±10% for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 70 ns ■ PROGRAMMING TIME – 10µs per Byte typical
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M29F032D
64Kbyte
TSOP40
1N914
A0-A21
M29F032D
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M29W160DB
Abstract: M29W160DT TFBGA48
Text: M29W160DT M29W160DB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical
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M29W160DT
M29W160DB
TSOP48
M29W160DB
M29W160DT
TFBGA48
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Untitled
Abstract: No abstract text available
Text: M29F016D 16 Mbit 2Mb x8, Uniform Block 5V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 5V ±10% for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55, 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte typical ■
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M29F016D
64Kbyte
TSOP40
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M29F032D
Abstract: A0-A21 JESD97
Text: M29F032D 32 Mbit 4Mb x8, Uniform Block 5V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 5V ±10% for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 70 ns ■ PROGRAMMING TIME – 10µs per Byte typical ■ 64 UNIFORM 64Kbyte MEMORY BLOCKS
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M29F032D
64Kbyte
TSOP40
M29F032D
A0-A21
JESD97
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M29F080D
Abstract: No abstract text available
Text: M29F080D 8 Mbit 1Mb x8, Uniform Block 5V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 5V ±10% for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55, 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte typical
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M29F080D
64Kbyte
TSOP40
M29F080D
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M29F080D
Abstract: No abstract text available
Text: M29F080D 8 Mbit 1Mb x8, Uniform Block 5V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 5V ±10% for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55, 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte typical
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M29F080D
64Kbyte
TSOP40
M29F080D
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1N914
Abstract: A0-A21 M29F032D A0A21
Text: M29F032D 32 Mbit 4Mb x8, Uniform Block 5V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 5V ±10% for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 70 ns ■ PROGRAMMING TIME – 10µs per Byte typical
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M29F032D
64Kbyte
TSOP40
1N914
A0-A21
M29F032D
A0A21
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Untitled
Abstract: No abstract text available
Text: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns
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M29W320DT
M29W320DB
TSOP48
TFBGA63
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27JUL2
Abstract: 22CAH
Text: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns PROGRAMMING TIME
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M29W320DT
M29W320DB
27JUL2
22CAH
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Untitled
Abstract: No abstract text available
Text: M29W320DT M29W320DB 32 Mbit 4Mbx8 or 2Mbx16, Non-uniform Parameter Blocks, Boot Block , 3V Supply Flash memory Feature summary Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) Access time: 70, 80, and 90 ns
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M29W320DT
M29W320DB
2Mbx16,
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M29W320D
Abstract: M29W320DB M29W320DT JESD97 TFBGA48
Text: M29W320DT M29W320DB 32 Mbit 4Mbx8 or 2Mbx16, Non-uniform Parameter Blocks, Boot Block , 3V Supply Flash memory Feature summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Access time: 70, 90ns
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M29W320DT
M29W320DB
2Mbx16,
M29W320D
M29W320DB
M29W320DT
JESD97
TFBGA48
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M29F016D
Abstract: No abstract text available
Text: M29F016D 16 Mbit 2Mb x8, Uniform Block 5V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 5V ±10% for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55, 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte typical ■
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M29F016D
64Kbyte
TSOP40
M29F016D
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M29W017D
Abstract: TFBGA48
Text: M29W017D 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte typical
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M29W017D
TSOP40
TFBGA48
M29W017D
TFBGA48
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MP1470
Abstract: No abstract text available
Text: THIS DRAWING IS COPYRIGHT UNPUBLISHED. 20 RELEASED BY TYCO ELECTRONICS CORPORATION FOR ALL 20 PUBLICATION RIGHTS REV I S IONS D I ST LOC RESERVED. FT LTR DESCRIPTION 05FEB2002 05APR2002 R E V I S E D P E R 0 G 3 B - 0 I 19-01 R E V I S E D P E R 0 G 3 B -07 I 4-0 I
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05FEB2002
05APR2002
94-VO,
5FEB2002
MP1470
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS COPYRIGHT UNPUBLISHED. 20 RELEASED BY TYCO ELECTRONICS CORPORATION FOR ALL 20 PUBLICATION RIGHTS LOC REV I S IONS D I ST FT RESERVED. LTR R E V I S E D PER 0 G 3 B - 0 7 I 4 - 0 I R E V I S E D EC 0 G 3 B - 0 I 4 5 - 0 4 R E V I S E D EC 0 G 3 B - 0 4 0 I - 04
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05APR2002
22MAR2004
N2004
06PEB2002
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