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    Untitled

    Abstract: No abstract text available
    Text: IRF234, IRF235, IRF236, IRF237 h a r r is SEUIC0NDUCT0R 8.1 A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 8.1 A and 6.5A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		IRF234, IRF235, IRF236, IRF237 1RF234, RF236, RF237 PDF

    YTF150

    Abstract: No abstract text available
    Text: 9097250 ¿Toshiba TOSHIBA 1 TT TOSHIBA {DISCRETE/OPTO} DE I TCIT72SD 0 0 1 t , 7 7 E 99D < 0 IS C R E T E / O P T O 16772 0 1 ^ 3 ^ -1 3 TOSHIBA FIELD EFFECT TRANSISTOR Y T F 15 0 SEMICONDUCTOR SILICON N CHANNEL MOS TYPE TECHNICAL DATA {7T-M0SIE) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.


    OCR Scan     		TDT72SD 0-045i2 100nA 250uA 250uA 150pC, YTF150 PDF

    TOSHIBA 9097250

    Abstract: No abstract text available
    Text: ]>e 1 =10^7250 Q01ti77H 1 TOSHIBA {DI SC RE TE /OPT O} 99D 16772 9097250 TOSHIBA <DIS C RE TE/OPTO> TOSHIBA SEMICONDUCTOR ¿/ a sh ih u DT-31-13 FIELD EFFECT TRANSISTOR Y T F 1 5 0 SILICON TECHNICAL DATA N CHANNEL MOS TYPE TT-MOSI HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.


    OCR Scan     		Q01ti77H DT-31-13 045i2 100nA 250yA 150pC, TOSHIBA 9097250 PDF