BUK9212-55B
Abstract: No abstract text available
Text: BUK9212-55B TrenchMOS logic level FET Rev. 02 — 12 December 2003 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.
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BUK9212-55B
M3D300
OT428
BUK9212-55B
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Untitled
Abstract: No abstract text available
Text: DP AK BUK9212-55B N-channel TrenchMOS logic level FET Rev. 03 — 3 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK9212-55B
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BUK9212-55B
Abstract: No abstract text available
Text: DP AK BUK9212-55B N-channel TrenchMOS logic level FET Rev. 03 — 3 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK9212-55B
BUK9212-55B
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N3NE
Abstract: No abstract text available
Text: THIS DRAWING AND DESIGN HEREON CON STITUTES A PROPRIETARY DESIGN OF PACKARD ELECTRIC DIVISION AND IS NOT TO BE DUPLICATED OR REPRODUCED WITH OUT AUTHORITY OF PACKARD ELECTRIC DIVISION. DO NOT SCALE DATE SYM 06FE86 RELEASED 06 F E 8 6 REVISED 03JN86 11MY87
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06FE86
03JN86
11MY87
03NO88
05JA8S
21AP83
18APS0
23AUS1
03MRS3
26SE34
N3NE
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C5125
Abstract: No abstract text available
Text: THIS DRAWING AND DESIGN HEREON CON S T IT U T E S A PROPRIETARY DESIGN OF PACKARD E LE C T R IC DIVISION AND IS NOT TO BE D UPLICATED OR REPRODUCED WITH OUT AUTHORITY OF PACKARD E LE C T R IC DIVISION. 8 6 7 5 4 2 3 PART NO. 1 ZONE DATE SYM REVISION RECORD
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06OC83
21JL8<
8S0004
-C-5125
060C88
06OC8S
03NO88
08NO88
C5125
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