HD radio nxp application
Abstract: BUK9217-75B
Text: DP AK BUK9217-75B N-channel TrenchMOS logic level FET Rev. 02 — 3 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK9217-75B
HD radio nxp application
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Untitled
Abstract: No abstract text available
Text: DP AK BUK9217-75B N-channel TrenchMOS logic level FET Rev. 02 — 3 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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03no42
Abstract: BUK9217-75B
Text: BUK9217-75B TrenchMOS logic level FET Rev. 01 — 22 January 2004 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.
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BUK9217-75B
M3D300
OT428
03no42
BUK9217-75B
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