Untitled
Abstract: No abstract text available
Text: ISS. DATE E.C.N. DESCRIPTION 1 02-May-12 FIRST ISSUE 2 11-Feb-04 2/4/1133 EDGE DRAFT INCREASED TO 3° 3 15-Jan-07 SCALLOP SIZE INCREASED TO R3.75 4 19-May-11 05/11/1301 1/07/1199 CUSTOMER DRAWING TIR CURVE DEFINITION REPLACED WITH EQUATION REFINE 25 DIM. TO REF
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02-May-12
11-Feb-04
15-Jan-07
03-July-12
19-May-11
03-Feb-04
24-Apr-12
21-May-12
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Untitled
Abstract: No abstract text available
Text: BAT86 VISHAY Vishay Semiconductors Schottky Diode Features • For general purpose applications. • This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
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BAT86
BAS86.
DO-35
D-74025
03-Feb-04
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zener Z2 033
Abstract: VISHAY TZS4678
Text: TZS4678 to TZS4717 VISHAY Vishay Semiconductors Silicon Epitaxial Planar Zener-Diodes Features • • • • Zener voltage specified at 50 µA Maximum delta VZ given from 10 µA to 100 µA Very high stability Low noise Applications 9612009 Voltage stabilization
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TZS4678
TZS4717
OD-80
D-74025
03-Feb-04
zener Z2 033
VISHAY TZS4678
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S4 DIODE schottky Vishay
Abstract: marking code s4 diode VISHAY marking s4 VISHAY sod
Text: SD104AWS to SD104CWS VISHAY Vishay Semiconductors Schottky Diodes Features • • • • • • • • Low turn-on voltage Low capacitance Ultrafast switching Single, double, and ring balanced mixer in narrowband receivers up to 1 GHz. Microminiature plastic package
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SD104AWS
SD104CWS
OD-323
SD104BWS
SD104CWS
SD104AWS-GS18
SD104AWS-GS08
SD104BWS-GS18
SD104BWS-GS08
S4 DIODE schottky Vishay
marking code s4 diode VISHAY
marking s4 VISHAY sod
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18546
Abstract: No abstract text available
Text: BAT46 VISHAY Vishay Semiconductors Schottky Diodes Features • For general purpose applications. • This diode features very low turn-on voltage and fast switching. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges
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BAT46
OD-123
BAT46W
DO-35
BAT46
BAT46-TR
BAT46-TAP
D-74025
03-Feb-04
18546
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mod 8 ring counter using JK flip flop
Abstract: ALU 74-181 auxillary contacts circuit datasheet ALU 74-181 mod 4 ring counter using JK flip flop UPSD3212C-40U6 UPSD3212CV UPSD3212CV-24T6 UPSD3212CV-24U6 LQFP80
Text: UPSD3212A UPSD3212C, UPSD3212CV Flash programmable system devices with 8032 MCU and USB and programmable logic Features • Fast 8-bit 8032 MCU – 40 MHz at 5.0 V, 24 MHz at 3.3 V – Core, 12-clocks per instruction ■ Dual Flash memories with memory management
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UPSD3212A
UPSD3212C,
UPSD3212CV
12-clocks
15-year
LQFP52
52-lead,
LQFP80
80-lead,
16-bit
mod 8 ring counter using JK flip flop
ALU 74-181
auxillary contacts
circuit datasheet ALU 74-181
mod 4 ring counter using JK flip flop
UPSD3212C-40U6
UPSD3212CV
UPSD3212CV-24T6
UPSD3212CV-24U6
LQFP80
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Untitled
Abstract: No abstract text available
Text: CAT28LV256 256K-Bit CMOS PARALLEL EEPROM FEATURES • 3.0V to 3.6V Supply ■ CMOS and TTL Compatible I/O ■ Read Access Times: 200/250/300 ns ■ Automatic Page Write Operation: – 1 to 64 Bytes in 10ms – Page Load Timer ■ Low Power CMOS Dissipation:
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CAT28LV256
256K-Bit
CAT28LV256
CAT28LV256NI-25T
MD-1071,
03-Feb-04
27-Feb-04
15-Oct-08
18-Nov-08
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58AP
Abstract: upsd TQFP52 TQFP80 uPSD3200 uPSD3212C uPSD3212C-40T6 uPSD3212C-40U6 uPSD3212CV uPSD3212CV-24T6
Text: uPSD3212C uPSD3212CV Flash Programmable System Devices with 8032 Microcontroller Core and 16Kbit SRAM FEATURES SUMMARY • The uPSD321X Devices combine a Flash PSD architecture with an 8032 microcontroller core. The uPSD321X Devices of Flash PSDs feature dual banks of Flash memory, SRAM,
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uPSD3212C
uPSD3212CV
16Kbit
uPSD321X
16-bit
64KByte
58AP
upsd
TQFP52
TQFP80
uPSD3200
uPSD3212C-40T6
uPSD3212C-40U6
uPSD3212CV-24T6
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Untitled
Abstract: No abstract text available
Text: uPSD3212C uPSD3212CV Flash Programmable System Devices with 8032 Microcontroller Core and 16 Kbit SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The uPSD321X Devices combine a Flash PSD architecture with an 8032 microcontroller
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uPSD3212C
uPSD3212CV
uPSD321X
16-bit
64KByte
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T 0075
Abstract: No abstract text available
Text: TZQ5221B to TZQ5267B VISHAY Vishay Semiconductors Silicon Epitaxial Planar Zener-Diodes Features • • • • • Very sharp reverse characteristic Low reverse current level Available with tighter tolerances Very high stability Low noise 9612009 Applications
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TZQ5221B
TZQ5267B
OD-80
D-74025
03-Feb-04
T 0075
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melf diode 666
Abstract: No abstract text available
Text: TZMB. VISHAY Vishay Semiconductors Silicon Epitaxial Planar Zener-Diodes Features • • • • • Very sharp reverse characteristic Low reverse current level Very high stability Low noise VZ-tolerance ± 2 % 17205 Applications Voltage stabilization Mechanical Data
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OD-80)
D-74025
03-Feb-04
melf diode 666
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TQFP80
Abstract: uPSD3212A uPSD3212C uPSD3212C-40T6 uPSD3212C-40U6 uPSD3212CV uPSD3212CV-24T6 uPSD3212CV-24U6 uPSD32
Text: uPSD3212A, uPSD3212C uPSD3212CV Flash Programmable System Devices with 8032 MCU with USB and Programmable Logic FEATURES SUMMARY • ■ ■ ■ ■ FAST 8-BIT 8032 MCU – 40MHz at 5.0V, 24MHz at 3.3V – Core, 12-clocks per instruction DUAL FLASH MEMORIES WITH MEMORY
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TQFP54
uPSD3212A
uPSD3212C
uPSD3212CV
40MHz
24MHz
12-clocks
15-year
TQFP80
uPSD3212C-40T6
uPSD3212C-40U6
uPSD3212CV-24T6
uPSD3212CV-24U6
uPSD32
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quality acceptance plan
Abstract: Vishay
Text: VISHAY Vishay Semiconductors Quality Information Vishay Semiconductors’ Continuous Improvement Activities • Quality training for ALL personnel including production, development, marketing and sales departments • Zero defect mindset • Permanent quality improvement process
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ISO14001
OHSAS18001
quality acceptance plan
Vishay
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Untitled
Abstract: No abstract text available
Text: CAT28LV256 256K-Bit CMOS PARALLEL EEPROM FEATURES • 3.0V to 3.6V Supply ■ CMOS and TTL Compatible I/O ■ Read Access Times: 200/250/300 ns ■ Automatic Page Write Operation: – 1 to 64 Bytes in 10ms – Page Load Timer ■ Low Power CMOS Dissipation:
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CAT28LV256
256K-Bit
CAT28LV256
MD-1071,
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Untitled
Abstract: No abstract text available
Text: BAS86 VISHAY Vishay Semiconductors Small Signal Schottky Barrier Diode Features • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic
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BAS86
DO-35
BAT86.
OD-80)
D-74025
03-Feb-04
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iso 9002 incoming part inspection
Abstract: Vishay Semiconductors
Text: VISHAY Vishay Semiconductors Quality Information Vishay Semiconductors’ Continuous Improvement Activities • Quality training for ALL personnel including production, development, marketing and sales departments • Zero defect mindset • Permanent quality improvement process
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ISO14001
OHSAS18001
03-Feb-04
iso 9002 incoming part inspection
Vishay Semiconductors
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11 TI APD
Abstract: No abstract text available
Text: uPSD3212C uPSD3212CV Flash Programmable System Devices with 8032 Microcontroller Core and 16 Kbit SRAM FEATURES SUMMARY • ■ ■ ■ ■ FAST 8-BIT 8032 MCU – 40MHz at 5.0V, 24MHz at 3.3V – Core, 12-clocks per instruction DUAL FLASH MEMORIES WITH MEMORY
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uPSD3212C
uPSD3212CV
40MHz
24MHz
12-clocks
15-year
11 TI APD
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zener smd marking M1 sod-123
Abstract: WT 7525 Zener diode smd marking code 39c smd diode z67 v9 TRANSISTOR SMD MARKING CODE t05 ZENER DIODE 6.2V bzx 85 c diode ZENER y8 sot23 zener BZX 55c 4v7 sod80 smd zener diode color band TRANSISTOR SMD MARKING CODE 3401
Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book zener diodes and esd protection components vishay semiconductors vHN-db1103-0406 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vHN-db1103-0406
zener smd marking M1 sod-123
WT 7525
Zener diode smd marking code 39c
smd diode z67 v9
TRANSISTOR SMD MARKING CODE t05
ZENER DIODE 6.2V bzx 85 c
diode ZENER y8 sot23
zener BZX 55c 4v7
sod80 smd zener diode color band
TRANSISTOR SMD MARKING CODE 3401
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KX23
Abstract: EX39
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2004 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. APRIL ,2004- LOC ALL RIGHTS RESERVED. E DIST R E V IS IO N S B LTR NOTES: DESCRIPTION A 1\ SINGLE PACK IN ACCORDANCE WITH SPEC DATE EBDO—0 0 3 5 —03 APVD
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03FEB04
RG55B/U,
142B/U,
223/U,
400/U,
31MAR2000
KX23
EX39
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74684
Abstract: 4052 application
Text: 4 TH IS DRAWING COPYRIGHT IS 2 U N P U B L IS H E D . 1 987 RELEASED BY ^ C O ELECTRONICS CORPORATION. FOR ALL PUBLICATION RIGHTS DEC REVISIONS 1987. R E S ER V ED . LTR ;1 D 48,68,96 Pos <ñ> <ñ> <ñ> <ñ> <8> <S> <S> <ñ> DATE REVISED PER ECO-10 - 0 0 0 4 4 3
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16JAN10
UL94V-0)
23DEC87
23DEC88
23JAN88
174G84â
CadData\AutoCAD\fj0t02
74684
4052 application
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KX3b
Abstract: No abstract text available
Text: T H IS D R A W IN G IS REUEASED U N P U B L IS H E D . FO R AUU C O P Y R IG H T 2004 By P U B U IC A T IO N R IG H TS A P R IU ,2 0 0 4 - REVISIO N S RESERVED. E - LTR NOTES: A1 4 \ S IN G LE A jO O A , D E S C R IP T IO N PACK TRAY 0 .0 8 p m PACK Au
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ECO-11-005033
03FEB04
03FEB04
74A/U,
316/U
KX22A
KX3b
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742 IC
Abstract: No abstract text available
Text: 2 4 TH IS DRAWING COPYRIGHT IS U N P U B L IS H E D . 1 988 RELEASED BY ^ C O FOR ALL ELECTRONICS CORPORATION. PUBLICATION RIGHTS MAR 1988- REVISIO N S R E S ER V ED . LTR RE VISED Ttv^ h D PER D E S C R IP TIO N DATE DWN ECO-09-024717 29DEC09 APVD KK AEG
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1988ALL
ECO-09-024717
29DEC09
03FEB04
742 IC
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Untitled
Abstract: No abstract text available
Text: 6 T H I S DRAWI NG COPYRI GHT I S UNP UB L I S HE D. 19 3 R E L E A S E D FOR P U B L I C A T I O N BY AMP INCORPORATED. LOC DIST 39 CONN CONN A1 REVISIONS A L L R I GH T S R ES ERVED. CONN CONN A8 A 1 O O o O o O o O o o o A3 • o i o * 8 o o o O o o
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02FEB04
04JUN04
6RN/66R
66RY65Ã
66R/6RY
66CY65R
56RYCR6
Y56Y666
66BYY56
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 2004 APRIL ,2004- LOC ALL RIGHTS RESERVED. DIST E R E V IS IO N S B LTR NOTES: A 1\ SINGLE PACK £ \ j0 0 DESCRIPTION IN ACCORDANCE WITH SPEC TRAY PACK DATE EBDO—0 0 3 5 —03
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27jum
08jum
76jum
76jum
03FEB04
03FEB04
KX22A
31MAR2000
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