2N2219A MOTOROLA
Abstract: 2N2219A 2N2219AJAN 4101 transistor
Text: MOTOROU SEMICONDUCTOR TECHNICAL DATA Order this document by 2N2219AJANID a 2N2219AJAN, JTX, JTXV, JANS Processed per MIL4-I 9500/251 NPN Silicon Small-ignal Transistors ., designed for genera~urpose switching and amplifier applications. CASE7$M, SWLE 1 T0205AD ~039
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2N2219AJANID
2N2219AJAN,
T0205AD
2N22d9A
2N2219AJAN/D
2N2219A MOTOROLA
2N2219A
2N2219AJAN
4101 transistor
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TV Tuner sharp
Abstract: LG lcd tv tuner SANSUI tv lg LCD nikko MAGNAVOX aiwa TV A141KE matsushita tuner vcr Techwood lcd LG TV
Text: Codeset Reference Manual for 6-in-1 North American Learning Crimzon RC Bullet v1.2 Page 1 031 034 039 026 027 037 040 051 041 12 11 10 057 012 015 016 023 032 020 043 018 003 009 019 054 033 035 044 045 046 005 006 028 031 042 056 010 014 029 030 054 038
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RM004901-0806
TV Tuner sharp
LG lcd tv tuner
SANSUI
tv lg LCD
nikko
MAGNAVOX
aiwa TV A141KE
matsushita tuner vcr
Techwood
lcd LG TV
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moc 3021
Abstract: DIN 3021 moc 3021 data sheet motorola triac driver IL440 2153 infrared applications of Moc 3021 moc 3052 MOTOROLA moc IFT30
Text: IL440 Triac Predriver Non-Zero Crossing Optocoupler FEATURES • 400 and 600 V Blocking Voltage • 5.0 mA Maximum Trigger Current • Isolation Voltage, 5300 VRMS, t=1.0 sec. • Isolation Materials per UL94 • Pin Compatible with Motorola Optocouplers IL440–1
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IL440
IL440
moc 3021
DIN 3021
moc 3021 data sheet
motorola triac driver
2153 infrared
applications of Moc 3021
moc 3052
MOTOROLA moc
IFT30
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moc opto triac
Abstract: OPTO TRIAC moc applications of Moc 3021 optocoupler triac infineon moc 3021 data sheet opto transistor moc Optocoupler, MOC 3021 3021 opto 3021 optocoupler motorola triac driver
Text: IL440 Triac Predriver Non-Zero Crossing Optocoupler FEATURES • 400 and 600 V Blocking Voltage • 5.0 mA Maximum Trigger Current • Isolation Voltage, 5300 VRMS, t=1.0 sec. • Isolation Materials per UL94 • Pin Compatible with Motorola Optocouplers IL440–1
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IL440
IL440
moc opto triac
OPTO TRIAC moc
applications of Moc 3021
optocoupler triac infineon
moc 3021 data sheet
opto transistor moc
Optocoupler, MOC 3021
3021 opto
3021 optocoupler
motorola triac driver
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IL440
Abstract: moc opto triac OPTO TRIAC moc 3021 opto opto transistor moc moc 3021 data sheet moc 3021 3021 optocoupler motorola triac driver optocoupler triac infineon
Text: IL440 Triac Predriver Non-Zero Crossing Optocoupler FEATURES • 400 and 600 V Blocking Voltage • 5.0 mA Maximum Trigger Current • Isolation Voltage, 5300 VRMS, t=1.0 sec. • Isolation Materials per UL94 • Pin Compatible with Motorola Optocouplers IL440–1
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IL440
IL440
moc opto triac
OPTO TRIAC moc
3021 opto
opto transistor moc
moc 3021 data sheet
moc 3021
3021 optocoupler
motorola triac driver
optocoupler triac infineon
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moc opto triac
Abstract: OPTO TRIAC moc motorola moc moc 3021 optocoupler 3023 Optocoupler, MOC 3021 DIN 3021 STANDARD applications of Moc 3021 3021 opto IFT30
Text: IL440 Triac Predriver Non-Zero Crossing Optocoupler FEATURES • 400 and 600 V Blocking Voltage • 5.0 mA Maximum Trigger Current • Isolation Voltage, 5300 VRMS, t=1.0 sec. • Isolation Materials per UL94 • Pin Compatible with Motorola Optocouplers IL440–1
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IL440
IL440
moc opto triac
OPTO TRIAC moc
motorola moc
moc 3021
optocoupler 3023
Optocoupler, MOC 3021
DIN 3021 STANDARD
applications of Moc 3021
3021 opto
IFT30
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices
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MRF9060M/D
MRF9060MR1
MRF9060MBR1
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NIPPON CAPACITORS
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF5S9100/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF5S9100NR1 RF Power Field Effect Transistors MRF5S9100NBR1 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9100MR1 Designed for broadband commercial and industrial applications with
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MRF5S9100/D
MRF5S9100NR1
MRF5S9100NBR1
MRF5S9100MR1
MRF5S9100MBR1
46duct
MRF5S9100MBR1
NIPPON CAPACITORS
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A113
Abstract: MRF9060MBR1 MRF9060MR1
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Freescale Semiconductor, Inc. Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices
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MRF9060M/D
MRF9060MR1
MRF9060MBR1
MRF9060MR1
A113
MRF9060MBR1
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line MRF9030MR1 MRF9030MBR1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices
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MRF9030M/D
MRF9030MR1
MRF9030MBR1
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VIPer 32
Abstract: TO272
Text: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9030MR1 MRF9030MBR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices
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MRF9030M/D
MRF9030MR1
MRF9030MBR1
VIPer 32
TO272
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vk200* FERROXCUBE
Abstract: MRF137 3950K MOTOROLA TRANSISTOR 974
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line 30 W 2 .0 -4 0 0 MHz N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR N-CHANNEL MOS BROADBAND RF POWER . . . designed fo r w ideband large-signal o utp ut and d river stages in the 2.0 to 400 MHz range
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MRF137
vk200* FERROXCUBE
3950K
MOTOROLA TRANSISTOR 974
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Untitled
Abstract: No abstract text available
Text: CONNOR—WINFIELD CORPORATION H C 4 9 /U CRYSTAL UNIT AURORA, IL. 60505 PHONE 63 0 8 5 1 -4 7 2 2 FAX (630) 8 5 1 -5 0 4 0 FOR MOTOROLA MC145572 ISDN U—INTERFACE TRANSCEIVER SPECIFICATIONS Frequency Frequency Tolerance (at 25’ C) Temperature Stability
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MC145572
CW49GLS-1
20MHz
26MHz
50ppm
20ppm
360ppm
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Untitled
Abstract: No abstract text available
Text: AURORA, IL. 6 05 0 5 CONNOR-WINFIELD CORPORATION PHONE 6 3 0 8 5 1 - 4 7 2 2 FAX (6 3 0 ) 8 5 1 - 5 0 4 0 H C 4 9 / U CRYSTAL UNIT FOR MOTOROLA MC 1 4 5 5 7 2 ISDN U —INTERFACE TRANSCEIVER SPECIFICATIONS Frequency Frequency Tolerance (a t 25’ C) Tem perature Stability
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CW49GL
20MHz
26MHz
20ppm
CW49GLS
360ppm
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Untitled
Abstract: No abstract text available
Text: AURORA, IL. 6 0 5 0 5 CONNOR—WINFIELD CORPORATION H C 4 9 /U CRYSTAL UNIT PHONE 6 3 0 8 5 1 - 4 7 2 2 FAX ( 6 3 0 ) 8 5 1 - 5 0 4 0 FOR MOTOROLA MC145572 ISDN U-INTERFACE TRANSCEIVER SPECIFICATIONS Frequency Frequency Tolerance (a t 25'C) Tem perature S tability
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MC145572
CW49GL
20MHz
26MHz
CW49GLS
20ppm
360ppm
360ppm
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MRF580
Abstract: MRFC581 ic tms 1000 MRF580A MRFC581A A581 2771 17t Motorola 581
Text: 4bE D MOTOROLA SC C X ST R S /R F • MOTOROLA b 3 b ? 2 S 4 O G W Ô b S ■ flOTb ~P -3 V O S ■ SEMICONDUCTOR MRF580,A MRF581,A MRFC581,A TECHNICAL DATA The R F Line NPN SILICON HIGH FREQUENCY TRANSISTORS . . . designed for high current low power am plifiers up to 1.0 GHz.
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MRF580
MRF581
MRFC581
MRF580A,
MRF581A,
MRFC581A
ic tms 1000
MRF580A
A581
2771 17t
Motorola 581
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MOTOROLA mac15 TRANSISTOR
Abstract: MCR225-2FP 2FP TRANSISTOR mac21B motorola transistor mac15 MJF10012 MJF16006A RECTIFIER 638 MOTOROLA tolerancing "Power Semiconductor Applications"
Text: MOTOROLA SC XST RS/ R F MbE D • b 3 b ? 2 S 4 DDTbESl b H MOTb Ç) Selection by Package (continued) THYRISTORS SCRs — Style 2 TRIACs — Style 3 Device T2500BFP T2500DFP T2500MFP T2500NFP MAC21B-4FP MAC218-6FP MAC218-8FP MAC218-10FP MAC228-4FP MAC228-6FP
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T2500BFP
T2500DFP
T2500MFP
T2500NFP
MAC21B-4FP
MAC218-6FP
MAC218-8FP
MAC218-10FP
MAC228-4FP
MAC228-6FP
MOTOROLA mac15 TRANSISTOR
MCR225-2FP
2FP TRANSISTOR
mac21B
motorola transistor mac15
MJF10012
MJF16006A
RECTIFIER 638 MOTOROLA
tolerancing
"Power Semiconductor Applications"
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K1461
Abstract: BD189 BD185 735M
Text: MOTOROLA sc 15E D I XSTRS/R F fc.3 fc.7 a 5 M 0 0 flM717 T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON NPN TRANSISTOR 4.0 AMPERES POWER TRANSISTOR NPN SILICON . . . designed for use in 6.0 to 10 Watt audio am plifiers utilizing com
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Q0flM717
BD185
BD189
K1461
735M
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MRF5160
Abstract: F5160 MRF*5160
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F5160 The RF Line PNP Silicon High Frequency Transistor lc = -400 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR PNP SILICON . . . designed for am plifier, oscillator or frequency m ultiplier applications in industrial
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F5160
MRF3866
MRF5160
MRF5160
F5160
MRF*5160
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bo 139
Abstract: bd 1382 semiconductor bo 137 BD 266 S BD 139 N bd 317 BD139.6 TR bd 139 BD139 NPN BD 139 140
Text: MOTORCL A SC 1EE D § L3b72S4 0GflM703 T | XSTRS/R F BD135,-6,-10,-16 BD137,-6,-10,-16 BD139,-6,-10,-16 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLA STIC M EDIUM POW ER SILIC O N NPN TR A N SISTO R 1.S AMPERE POWER TRANSISTOR . . . designed for use as audio amplifiers and drivers utilizing
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L3b72S4
0GflM703
BD135
BD137
BD139
225AA
bo 139
bd 1382 semiconductor
bo 137
BD 266 S
BD 139 N
bd 317
BD139.6
TR bd 139
BD139 NPN
BD 139 140
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lt 2904
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Inform ation S m all-S ign al Field E ffe c t Tran sisto r Silicon Gate TMOS • • • • 625 m W T M O S FET rDS on = 12 OH M S 150 VOLTS N-CHANNEL DEPLETION MODE N o rm a lly C losed Relay T e lep h o ne Line S w itc h in g
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O-22GAA
-226AA
lt 2904
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MJE370
Abstract: MJE520 MOTOROLA
Text: MOTOROLA SC X S T R S /R 1SE D I F b3b?254 Ciaa53H7 2 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM-POWER PNP SILICON TRANSISTOR 3 AMPERE POWER TRANSISTOR PNP SILICON . . . designed for use in general-purpose amplifiers and switching circuits. Recommended for use in 5 to 10 W att audio amplifiers uti
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Ciaa53H7
MJE520
MJE370
MJE520 MOTOROLA
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JE3300
Abstract: MJE3310 motorola amplifier MJE3301 MJE3300 je331
Text: MOTOROLA SC X S T R S /R 12E 0 F b 3 fei? 5 5 4 I 0 QÖS3 S 1 NPN M O TO RO LA T | r-13'33 MJE3300, MJE3301 • SEMICONDUCTOR PNP TECHNICAL DATA MJE3310 PLASTIC DARLINGTON COMPLEMENTARY SILICON ANNULAR POWER TRANSISTORS DARLINGTON 4-AMPERE . . . designed for general-purpose amplifier and high-speed switching
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MJE3300,
MJE3301
MJE3310
JE3310/M
JE3300
JE3300
MJE3310
motorola amplifier
MJE3300
je331
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JE3440
Abstract: JE3439 JE34
Text: MOT O RO LA SC 12E 0 | L3t.72S4 0005353 3 | X S T R S/ R F T -3 3 -^ r MOTOROLA MJE3439 MJE3440 • SEMICONDUCTOR TECHNICAL DATA 0.3 AMPERE NPN SILICON HIGH-VOLTAGE POWER TRANSISTORS POWER TRANSISTORS NPN SILICON . . . designed fo r use in line operated equipm ent requiring high fr.
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MJE3439
MJE3440
JE3440
JE3439
JE34
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