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    02N8 Search Results

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    02N8 Price and Stock

    Walsin Technology Corporation 0402N820J500CT

    CAP CER 82PF 50V C0G/NP0 0402
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    DigiKey 0402N820J500CT Cut Tape 81,774 1
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    0402N820J500CT Digi-Reel 81,774 1
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    0402N820J500CT Reel 80,000 10,000
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    Mouser Electronics 0402N820J500CT 25,640
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    Newark 0402N820J500CT Cut Tape 4,964 10
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    Bristol Electronics 0402N820J500CT 30,000
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    Chip1Stop 0402N820J500CT Cut Tape 10,000
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    Walsin Technology Corporation 0402N8R2C500CT

    CAP CER 8.2PF 50V C0G/NP0 0402
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    DigiKey 0402N8R2C500CT Digi-Reel 24,428 1
    • 1 $0.1
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    0402N8R2C500CT Cut Tape 24,428 1
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    0402N8R2C500CT Reel 10,000 10,000
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    Bristol Electronics 0402N8R2C500CT 151,000
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    TME 0402N8R2C500CT 49,132 1
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    Novacap MD0402N8R2C500YHT-EM

    CAP CER 8.2PF 50V C0G/NP0 0402
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    DigiKey MD0402N8R2C500YHT-EM Reel 10,000 10,000
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    MD0402N8R2C500YHT-EM Digi-Reel 10,000 1
    • 1 $1.11
    • 10 $0.691
    • 100 $0.4681
    • 1000 $0.34955
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    MD0402N8R2C500YHT-EM Cut Tape 10,000 1
    • 1 $1.11
    • 10 $0.691
    • 100 $0.4681
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    Walsin Technology Corporation 0402N8R2B500CT

    CAP CER 8.2PF 50V C0G/NP0 0402
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    DigiKey 0402N8R2B500CT Digi-Reel 3,387 1
    • 1 $0.1
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    0402N8R2B500CT Cut Tape 3,387 1
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    Newark 0402N8R2B500CT Reel 30,000 10,000
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    0402N8R2B500CT Cut Tape 20,000 10
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    Microchip Technology Inc TP2502N8-G

    MOSFET P-CH 20V 630MA TO243AA
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    DigiKey TP2502N8-G Digi-Reel 1,197 1
    • 1 $4.59
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    TP2502N8-G Cut Tape 1,197 1
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    Avnet Americas TP2502N8-G Reel 4 Weeks 2,000
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    Mouser Electronics TP2502N8-G 599
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    RS TP2502N8-G Bulk 6 Weeks 2,000
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    Microchip Technology Inc TP2502N8-G 40,000
    • 1 $1.7
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    TME TP2502N8-G 1
    • 1 $1.5
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    NAC TP2502N8-G 30,000 1
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    Avnet Silica TP2502N8-G 6 Weeks 2,000
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    EBV Elektronik TP2502N8-G 5 Weeks 2,000
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    Master Electronics TP2502N8-G 2,000
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    Find more 02N8 price and stock on Findchips.com

    02N8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    02N80C3

    Abstract: JESD22 PG-TO220-3 SPA02N80C3
    Text: 02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPA02N80C3 PG-TO220-3 02N80C3 02N80C3 JESD22 PG-TO220-3 SPA02N80C3

    02N80C3

    Abstract: JESD22 SPD02N80C3 Transistor d12 t smd G47 02n80c
    Text: 02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPD02N80C3 PG-TO252-3 02N80C3 02N80C3 JESD22 SPD02N80C3 Transistor d12 t smd G47 02n80c

    Untitled

    Abstract: No abstract text available
    Text: 02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPD02N80C3 PG-TO252-3 02N80C3

    C2625

    Abstract: 02N80C3 02N8
    Text: 02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPP02N80C3 PG-TO220-3 02N80C3 C2625 02N80C3 02N8

    02N80C3

    Abstract: JESD22 PG-TO220-3 SPP02N80C3 02N8
    Text: 02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPP02N80C3 PG-TO220-3 02N80C3 02N80C3 JESD22 PG-TO220-3 SPP02N80C3 02N8

    02N80C3

    Abstract: No abstract text available
    Text: 02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPD02N80C3 PG-TO252-3 02N80C3 02N80C3

    SPD02N80C3

    Abstract: 02N80C3 Q67040-S4635 55-AK
    Text: 02N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 2.7 Ω ID 2 A P-TO252-3-1 • Periodic avalanche rated • Extreme dv/dt rated Type Package Ordering Code


    Original     		PDF SPD02N80C3 P-TO252-3-1 Q67040-S4635 02N80C3 SPD02N80C3 02N80C3 Q67040-S4635 55-AK

    02N80C3

    Abstract: No abstract text available
    Text: 02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPA02N80C3 PG-TO220-3 02N80C3 02N80C3

    02N80C3

    Abstract: No abstract text available
    Text: 02N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 2.7 Ω • Extreme dv/dt rated


    Original     		PDF SPP02N80C3 P-TO220-3-1 Q67040-S4432 02N80C3 02N80C3

    02N80C3

    Abstract: Transistor d12 t DS800 SPA02N80
    Text: 02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPA02N80C3 PG-TO220-3 02N80C3 100ain 02N80C3 Transistor d12 t DS800 SPA02N80

    Untitled

    Abstract: No abstract text available
    Text: 02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 W Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPD02N80C3 PG-TO252-3 02N80C3

    MAX7523

    Abstract: 02N80C3 02N8
    Text: 02N80C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V • Periodic avalanche rated RDS on 2.7 Ω • Extreme dv/dt rated ID 2 A P-TO220-3-1 Type


    Original     		PDF SPP02N80C3 P-TO220-3-1 Q67040-S4432 02N80C3 MAX7523 02N80C3 02N8

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819

    Untitled

    Abstract: No abstract text available
    Text: 02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 W Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPD02N80C3 PG-TO252-3 02N80C3

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		PDF B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265

    02N80C3

    Abstract: Q67040-S4432 SPA02N80C3 SPP02N80C3 02N8
    Text: 02N80C3 02N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 2.7 Ω ID 2 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)


    Original     		PDF SPP02N80C3 SPA02N80C3 P-TO220-3-31 P-TO220-3-1 P-TO-220-3-31: Q67040-S4432 02N80C3 02N80C3 Q67040-S4432 SPA02N80C3 SPP02N80C3 02N8

    02N80C3

    Abstract: SPP02N80C3 Q67040-S4432
    Text: 02N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 2.7 Ω ID 2 A P-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated Type Package Ordering Code


    Original     		PDF SPP02N80C3 P-TO220-3-1 Q67040-S4432 02N80C3 02N80C3 SPP02N80C3 Q67040-S4432

    Untitled

    Abstract: No abstract text available
    Text: 02N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V • Periodic avalanche rated RDS on 2.7 Ω • Extreme dv/dt rated ID 2 A P-TO220-3-1 Type Package


    Original     		PDF SPP02N80C3 P-TO220-3-1 Q67040-S4432 02N80C3

    Untitled

    Abstract: No abstract text available
    Text: 02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 9 Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPD02N80C3 PG-TO252-3 02N80C3