Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT RELEASED FOR PUBLICATION 6 5 4 3 2 20 LOC ES ALL RIGHTS RESERVED. 20 1 REVISIONS DIST 00 P LTR B1 C D DESCRIPTION DATE REVISED ECR-08-013764 DWN APVD 02JUN08 AZ SY ECR-08-028454 11NOV2008 AL SY REVISED PER ECO-14-000886
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ECR-08-013764
02JUN08
ECR-08-028454
11NOV2008
ECO-14-000886
20FEB2014
28JUN04
30JUN04
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AMP Spec 109-21-7
Abstract: 114-26012 501-203 AMP Spec 109-35
Text: Product Specification 108-14034 02Jun08 Rev C Connector, Card Edge, .050 Centerline 1. SCOPE 1.1. Content | This specification covers performance, tests and quality requirements for Tyco Electronics .050 centerline card edge connector. This connector is a multi-contact edge board type having contacts for
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02Jun08
AMP Spec 109-21-7
114-26012
501-203
AMP Spec 109-35
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Si6963BDQ
Abstract: No abstract text available
Text: Si6963BDQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 3.9 0.080 at VGS = - 2.5 V - 3.0 • Halogen-free RoHS COMPLIANT S2 S1 TSSOP-8 D1 1 S1 2 S1 3 G1 4 Si6963BDQ G2
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Si6963BDQ
Si6963BDQ-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product Si4122DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0045 at VGS = 10 V 27.2 0.006 at VGS = 4.5 V 23.5 VDS (V) 40 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)
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Si4122DY
Si4122DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si6955ADQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.080 at VGS = - 10 V ± 2.9 0.135 at VGS = - 4.5 V ± 2.2 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT S1 G1 TSSOP-8 D1
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Si6955ADQ
Si6955ADQ-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si6969BDQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 • Halogen-free Option Available RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 4.6 0.040 at VGS = - 2.5 V - 3.8 RoHS* 0.055 at VGS = - 1.8 V - 3.0 COMPLIANT
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Si6969BDQ
Si6969BDQ-T1
Si6969BDQ-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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30EPH06
Abstract: IRFP250 ph06
Text: 30EPH06 Vishay High Power Products Hyperfast Rectifier, 30 A FRED PtTM FEATURES • Hyperfast recovery time Base common cathode 2 • Low forward voltage drop • Low leakage current • 175 °C operating junction temperature • Single diode device • Designed and qualified for industrial level
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30EPH06
O-247AC
18-Jul-08
30EPH06
IRFP250
ph06
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60APU02
Abstract: 60EPU02 IRFP250
Text: 60EPU02/60APU02 Vishay High Power Products Ultrafast Soft Recovery Diode, 60 A FRED PtTM FEATURES 60EPU02 60APU02 • Ultrafast recovery • 175 °C operating junction temperature • Designed and qualified for industrial level Base common cathode 2 Base common
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60EPU02/60APU02
60EPU02
60APU02
O-247AC
O-247AC
18-Jul-08
60APU02
60EPU02
IRFP250
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S-81216-Rev
Abstract: Si1467DH Si1467DH-T1-E3
Text: New Product Si1467DH Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)c 0.090 at VGS = - 4.5 V - 1.6 - 20 0.115 at VGS = - 2.5 V - 1.6 0.150 at VGS = - 1.8 V - 1.6 Qg (Typ.) 9.0 nC • TrenchFET Power MOSFET
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Si1467DH
OT-363
SC-70
Si1467DH-T1-E3
18-Jul-08
S-81216-Rev
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300HF
Abstract: DO-205AB 300hf40
Text: 300HF.L Series Vishay High Power Products Standard Recovery Diodes Stud Version , 300 A FEATURES • Diffused glass passivated die RoHS • Popular series for rough service COMPLIANT • Stud cathode and stud anode version • High surge capability • Very low VF
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300HF.
DO-205AB
18-Jul-08
300HF
DO-205AB
300hf40
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Untitled
Abstract: No abstract text available
Text: Si6973DQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 4.8 0.039 at VGS = - 2.5 V - 4.2 0.055 at VGS = - 1.8 V - 3.5 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated
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Si6973DQ
Si6973DQ-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si6963BDQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 3.9 0.080 at VGS = - 2.5 V - 3.0 • Halogen-free RoHS COMPLIANT S1 TSSOP-8 D1 1 S1 2 S1 3 G1 4 Si6963BDQ S2 G2
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Si6963BDQ
Si6963BDQ-T1-GE3
70emarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product Si4122DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0045 at VGS = 10 V 27.2 0.006 at VGS = 4.5 V 23.5 VDS (V) 40 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)
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Si4122DY
Si4122DY-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si6981DQ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.031 at VGS = - 4.5 V - 4.8 0.041 at VGS = - 2.5 V - 4.2 0.058 at VGS = - 1.8 V - 3.5 • Halogen-free • TrenchFET Power MOSFETs RoHS
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Si6981DQ
Si6981DQ-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si6963BDQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 3.9 0.080 at VGS = - 2.5 V - 3.0 • Halogen-free RoHS COMPLIANT S2 S1 TSSOP-8 D1 1 S1 2 S1 3 G1 4 Si6963BDQ G2
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Si6963BDQ
Si6963BDQ-T1-GE3
11-Mar-11
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IRF820ASPBF
Abstract: No abstract text available
Text: IRF820AS, SiHF820AS, IRF820AL, SiHF820AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Max.) (Ω) VGS = 10 V 3.0 Qg (Max.) (nC) 17 Qgs (nC) 4.3 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt
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IRF820AS,
SiHF820AS
IRF820AL,
SiHF820AL
O-262)
O-263)
12-Mar-07
IRF820ASPBF
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Untitled
Abstract: No abstract text available
Text: SUD50N03-11 Vishay Siliconix N-Channel 30-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.011 at VGS = 10 V 50 0.017 at VGS = 4.5 V 43 VDS (V) 30 • TrenchFET Power MOSFET • 175 °C Maximum Junction Temperature • 100 % Rg Tested
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SUD50N03-11
O-252
SUD50N03-11-E3
11-Mar-11
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Si6955ADQ
Abstract: No abstract text available
Text: Si6955ADQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.080 at VGS = - 10 V ± 2.9 0.135 at VGS = - 4.5 V ± 2.2 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT S1 G1 TSSOP-8 D1
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Si6955ADQ
Si6955ADQ-T1-GE3
18-Jul-08
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Si6954ADQ-T1
Abstract: Si6954ADQ
Text: Si6954ADQ Vishay Siliconix N-Channel 2.5-V G-S Battery Switch FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.053 at VGS = 10 V 3.4 0.075 at VGS = 4.5 V 2.9 • Halogen-free • TrenchFET Power MOSFETs: 2.5 V Rated RoHS COMPLIANT D1 D2 TSSOP-8
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Si6954ADQ
Si6954ADQ-T1-GE3
18-Jul-08
Si6954ADQ-T1
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Si6975DQ
Abstract: No abstract text available
Text: Si6975DQ Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.027 at VGS = - 4.5 V - 5.1 0.036 at VGS = - 2.5 V - 4.5 0.046 at VGS = - 1.8 V - 3.9 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated
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Si6975DQ
Si6975DQ-T1-GE3
18-Jul-08
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Si6991DQ
Abstract: No abstract text available
Text: Si6991DQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.040 at VGS = - 10 V - 4.2 0.068 at VGS = - 4.5 V - 3.2 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT APPLICATIONS • Load Switch
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Si6991DQ
Si6991DQ-T1-GE3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si6969BDQ Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 • Halogen-free Option Available RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 4.6 0.040 at VGS = - 2.5 V - 3.8 RoHS* 0.055 at VGS = - 1.8 V - 3.0 COMPLIANT
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Si6969BDQ
Si6969BDQ-T1
Si6969BDQ-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si6993DQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.031 at VGS = - 10 V - 4.7 0.048 at VGS = - 4.5 V - 3.8 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT APPLICATIONS • Load Switch
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Si6993DQ
Si6993DQ-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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kema t85 4(2)/250
Abstract: 111SM119-H2 TYJ5929
Text: F O - 5 5 1 1 1 -A HONEYWELL P A R T NUMBER 111SM119-H2 REV 5 DOCUMENT C H A N G E D BY CHECK KVS 02JUN08 0040331 ASD PRODUCT CODE TYJ5929 . I 50 MAX P RET RAVEL . 0 3 0d= . 0 2 0 POINT " A " / 4 B B . 3 5 0 ± . 030 OPERATING POSITION 3 56± . 0 I 0 260 .2 0 3 ± . 0 I 0
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OCR Scan
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111SM119-H2
TYJ5929
02JUN08
SM-1326
X94391
5M-1982
kema t85 4(2)/250
111SM119-H2
TYJ5929
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