02APR12 Search Results

m2509

Abstract: LR7189 amp
Contextual Info: 4 T H IS D R A W IN G S 3 U N P U B L IS H E D . RELEASED FO R ALL C O P Y R IG H T By 2 P U B L IC A T IO N R IG H TS R E V IS IO N S RESERVED. - LTR J2 D E S C R IP T IO N NEW D R A W IN G PER -019045 DWN A PVD 02APR12 KH DR BODY D INSULATION SERRATIONS

SIHF10N40D-E3

Contextual Info: SiHF10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness

forth dimension displays

Abstract: SIHU3N50D-GE3
Contextual Info: SiHU3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. () at 25 °C VGS = 10 V 3.2 Qg (max.) (nC) 20

Contextual Info: SiHF6N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness

Contextual Info: SiHP10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 450 RDS(on) max. at 25 °C () VGS = 10 V 0.6 Qg max. (nC) 30

Contextual Info: SiHP8N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. at 25 °C () VGS = 10 V 0.85 Qg (max.) (nC)

Contextual Info: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP MAX UNITS 3025 MHz 4.7 VDC 5.0 5.25 VDC +3.0 dBm 15 25 mA Pushing: 2.0 MHz/V Pulling, all Phases: 8.0 MHz pk-pk -95 dBc/Hz Lower Frequency: Upper Frequency: 3125 Tuning Voltage:

Contextual Info: SiHP8N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. at 25 °C () VGS = 10 V 0.85 Qg (max.) (nC)

Contextual Info: SiHP6N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 450 RDS(on) max. at 25 °C () VGS = 10 V 1.0 Qg max. (nC) 18

Contextual Info: SiHP10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 450 RDS(on) max. at 25 °C () VGS = 10 V 0.6 Qg max. (nC) 30

Contextual Info: SiHG17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design 650 RDS(on) max. at 25 °C () VGS = 10 V Qg (Max.) (nC) 90 Qgs (nC) 14 Qgd (nC) 22 Configuration - Low Area Specific On-Resistance

Contextual Info: SiHF10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness

Contextual Info: SiHF5N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness

Contextual Info: SiHG17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design 650 RDS(on) max. at 25 °C () VGS = 10 V Qg (Max.) (nC) 90 Qgs (nC) 14 Qgd (nC) 22 Configuration - Low Area Specific On-Resistance

Contextual Info: SDZ36VD ZENER DIODE Small Signal Zener Diode General Description These diodes small signal Zener diodes, fabricated in planar technology. Miniature surface mount package is excellent for hand-held and portable applications where is space is limited. Features and Benefits

SIHF8N50D

Contextual Info: SiHF8N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness

Contextual Info: SiHU3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. () at 25 °C VGS = 10 V 3.2 Qg (max.) (nC) 20

Contextual Info: SiHP8N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. at 25 °C () VGS = 10 V 0.85 Qg (max.) (nC)

Contextual Info: TSMP1138 www.vishay.com Vishay Semiconductors IR Sensor Module for Remote Control Systems FEATURES • Photo detector and preamplifier in one package • AC coupled response from 30 kHz to 55 kHz, all data formats • If the IR singal strength is less then 300 mW/m2

Contextual Info: TSOP312., TSOP314. www.vishay.com Vishay Semiconductors IR Receiver Modules for Remote Control Systems FEATURES • Very low supply current • Photo detector and preamplifier in one package • Internal filter for PCM frequency • Improved shielding against EMI

Contextual Info: SiHU5N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. at 25 °C () VGS = 10 V 1.5 Qg (max.) (nC) 20

sihp5n50

Contextual Info: SiHP5N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. at 25 °C () VGS = 10 V 1.5 Qg (max.) (nC) 20

Contextual Info: SiHP6N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 450 RDS(on) max. at 25 °C () VGS = 10 V 1.0 Qg max. (nC) 18

Contextual Info: SiHF5N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness