SIHF10N40D-E3
Abstract: No abstract text available
Text: SiHF10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness
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Original
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PDF
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SiHF10N40D
O-220
2011/65/EU
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SIHF10N40D-E3
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forth dimension displays
Abstract: SIHU3N50D-GE3
Text: SiHU3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. () at 25 °C VGS = 10 V 3.2 Qg (max.) (nC) 20
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Original
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PDF
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SiHU3N50D
O-251)
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
forth dimension displays
SIHU3N50D-GE3
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Untitled
Abstract: No abstract text available
Text: SiHF6N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness
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Original
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PDF
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SiHF6N40D
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiHP10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 450 RDS(on) max. at 25 °C () VGS = 10 V 0.6 Qg max. (nC) 30
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Original
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PDF
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SiHP10N40D
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SiHP8N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. at 25 °C () VGS = 10 V 0.85 Qg (max.) (nC)
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Original
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PDF
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SiHP8N50D
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP MAX UNITS 3025 MHz 4.7 VDC 5.0 5.25 VDC +3.0 dBm 15 25 mA Pushing: 2.0 MHz/V Pulling, all Phases: 8.0 MHz pk-pk -95 dBc/Hz Lower Frequency: Upper Frequency: 3125 Tuning Voltage:
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PDF
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10kHz
100kHz
Ran02)
CVCO55BE-3025-3125
02-Apr-12
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Untitled
Abstract: No abstract text available
Text: SiHP8N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. at 25 °C () VGS = 10 V 0.85 Qg (max.) (nC)
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Original
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PDF
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SiHP8N50D
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiHP6N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 450 RDS(on) max. at 25 °C () VGS = 10 V 1.0 Qg max. (nC) 18
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Original
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PDF
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SiHP6N40D
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiHP10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 450 RDS(on) max. at 25 °C () VGS = 10 V 0.6 Qg max. (nC) 30
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Original
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PDF
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SiHP10N40D
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiHG17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design 650 RDS(on) max. at 25 °C () VGS = 10 V Qg (Max.) (nC) 90 Qgs (nC) 14 Qgd (nC) 22 Configuration - Low Area Specific On-Resistance
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Original
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PDF
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SiHG17N60D
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SiHF10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness
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Original
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PDF
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SiHF10N40D
2011/65/EU
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SiHF5N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness
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Original
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PDF
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SiHF5N50D
O-220
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiHG17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design 650 RDS(on) max. at 25 °C () VGS = 10 V Qg (Max.) (nC) 90 Qgs (nC) 14 Qgd (nC) 22 Configuration - Low Area Specific On-Resistance
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Original
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PDF
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SiHG17N60D
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SIHU5N50D-GE3
Abstract: No abstract text available
Text: SiHU5N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. at 25 °C () VGS = 10 V 1.5 Qg (max.) (nC) 20
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Original
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PDF
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SiHU5N50D
O-251)
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SIHU5N50D-GE3
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SIHF8N50D
Abstract: No abstract text available
Text: SiHF8N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness
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Original
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PDF
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SiHF8N50D
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: SiHU3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. () at 25 °C VGS = 10 V 3.2 Qg (max.) (nC) 20
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Original
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PDF
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SiHU3N50D
O-251)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: SiHP8N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. at 25 °C () VGS = 10 V 0.85 Qg (max.) (nC)
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Original
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PDF
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SiHP8N50D
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: TSMP1138 www.vishay.com Vishay Semiconductors IR Sensor Module for Remote Control Systems FEATURES • Photo detector and preamplifier in one package • AC coupled response from 30 kHz to 55 kHz, all data formats • If the IR singal strength is less then 300 mW/m2
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Original
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PDF
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TSMP1138
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: TSOP312., TSOP314. www.vishay.com Vishay Semiconductors IR Receiver Modules for Remote Control Systems FEATURES • Very low supply current • Photo detector and preamplifier in one package • Internal filter for PCM frequency • Improved shielding against EMI
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Original
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PDF
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TSOP312.
TSOP314.
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiHU5N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. at 25 °C () VGS = 10 V 1.5 Qg (max.) (nC) 20
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Original
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PDF
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SiHU5N50D
O-251)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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sihp5n50
Abstract: No abstract text available
Text: SiHP5N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. at 25 °C () VGS = 10 V 1.5 Qg (max.) (nC) 20
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Original
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PDF
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SiHP5N50D
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
sihp5n50
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Untitled
Abstract: No abstract text available
Text: SiHP6N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 450 RDS(on) max. at 25 °C () VGS = 10 V 1.0 Qg max. (nC) 18
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Original
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PDF
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SiHP6N40D
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiHF5N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness
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Original
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PDF
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SiHF5N50D
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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m2509
Abstract: LR7189 amp
Text: 4 T H IS D R A W IN G S 3 U N P U B L IS H E D . RELEASED FO R ALL C O P Y R IG H T By 2 P U B L IC A T IO N R IG H TS R E V IS IO N S RESERVED. - LTR J2 D E S C R IP T IO N NEW D R A W IN G PER -019045 DWN A PVD 02APR12 KH DR BODY D INSULATION SERRATIONS
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OCR Scan
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PDF
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02APR12
LR7189
m2509
LR7189 amp
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