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    0220A Search Results

    0220A Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    950220AFLF Renesas Electronics Corporation Programmable Timing Control Hub™ For P4™ Visit Renesas Electronics Corporation
    P9022-0AHGI8 Renesas Electronics Corporation Enhanced WPC 1.1 Wireless Power Receiver Visit Renesas Electronics Corporation
    950220AFLFT Renesas Electronics Corporation Programmable Timing Control Hub™ For P4™ Visit Renesas Electronics Corporation
    10075025-G02-20ALF Amphenol Communications Solutions Minitek® 2.00mm, Board to Board, Shrouded Header - Through Mount Pin-in-Paste - Double row - 20 Positions - 2mm (0.079in) - Vertical. Visit Amphenol Communications Solutions
    SF Impression Pixel

    0220A Price and Stock

    TE Connectivity BMC1HY0220AN

    FERRITE BEAD 220 OHM 0201 1LN
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    DigiKey BMC1HY0220AN Cut Tape 26,635 1
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    Mouser Electronics BMC1HY0220AN 12,390
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    TE Connectivity BMC1JY0220AN

    FERRITE BEAD 220 OHM 0603 1LN
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    DigiKey BMC1JY0220AN Reel 4,000 4,000
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    BMC1JY0220AN Cut Tape 3,566 1
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    Mouser Electronics BMC1JY0220AN 6,830
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    Avnet Abacus BMC1JY0220AN 29 Weeks 4,000
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    onsemi AR0220AT4B00XUEA2-DPBR

    2MP 1/2 CIS SO
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    DigiKey AR0220AT4B00XUEA2-DPBR Tray 4,000 1
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    TDK Epcos B59102R0220A010V60

    SENSOR PTC 1KOHM 50% RECTANGULAR
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    DigiKey B59102R0220A010V60 Tray 1,775 1
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    TDK Epcos B59041R0220A010

    SENSOR PTC 6.4OHM 50% RECT
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    DigiKey B59041R0220A010 Tray 755 1
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    Newark B59041R0220A010 Bulk 1,326 1
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    Find more 0220A price and stock on Findchips.com

    0220A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    0220-A Davies Molding Boxes, Enclosures, Racks - Boxes - BOX PLASTIC BLACK 3.99"LX2.87"W Original PDF

    0220A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NHD 0220AZ FL YBW Character Liquid Crystal Display Module NHD 0220 AZ F L Y B W Newhaven Display 2 lines x 20 characters


    Original     		PDF 0220AZ 48hrs 30min 100pF 48hrs

    ISO11359-2

    Abstract: 1140A1 ASTM d792 Polyphenylene sulfide OF-1008 PPS 1130a1 modulus Fortron 1140L4 1140A64 1140A6 1140L4
    Text: SENSORS & CONTROLS PRODUCTS June, 2006 Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team Model EN Optical Encoder Series Material Change Sensors and Controls Division will be changing the plastic material used in molding the LED trimming


    Original     		PDF 1140L4 OF-1008 ISO11359-2 1140A1 ASTM d792 Polyphenylene sulfide OF-1008 PPS 1130a1 modulus Fortron 1140L4 1140A64 1140A6

    BUJ202

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ202A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in T 0220A B envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control


    OCR Scan     		PDF BUJ202A BUJ202

    15n10

    Abstract: 100-c30 smd 33a C30T09Q C30T09Q-11A C30T10Q C30T10Q-11A FCH30A09 FCH30A10 GCH30A09
    Text: SCHOTTKY BARRIER DIODE /on 1nm i 33A/90— 10UV C30T09Q C30T09Q-11A GCH30A09 FCH30A09 C30T10Q C30T10Q-11A GCH30A10 FCH30A10 FEATURES o | SQUARE-PAK~| TO-263AB SMD Packaged in 24mm Tape and Reel : C30T • • Q o Tabless TO-220: C30T-Q-11A o T 0220A B : GCH30A • •


    OCR Scan     		PDF 3A/90 C30T09Q C30T09Q-11A GCH30A09 FCH30A09 C30T10Q C30T10Q-11A GCH30A10 FCH30A10 O-263AB 15n10 100-c30 smd 33a FCH30A10

    BUK455-500B

    Abstract: BJE 80 diode T0220AB
    Text: N AP1ER P H I L I P S / D I S C R E T E bTE D • bbS313 1 DOBDbLiD 76T H A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION PINNING - T 0220A B SYMBOL PARAMETER Drain-source voltage Drain current DC Total power dissipation


    OCR Scan     		PDF bbS3131 BUK455-500B T0220AB 03Qbfc /V-10 BJE 80 diode

    XY 805 ic

    Abstract: No abstract text available
    Text: C RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION FAST RECOVERY RECTIFIER VOLTAGE RANGE-50 to 800 Volts CURRENT-8.0 Amperes FEATURES * F a st sw itc h in g * L o w le akage * L o w fo rw a rd v o lta ge drop * H igh cu rrent capability T 0220A * H igh s u rg e capability


    OCR Scan     		PDF RANGE-50 XY 805 ic

    2x15

    Abstract: STPS125U STPS10L25D
    Text: POWER RECTIFIERS rz 7 POWER SCHOTTKY DIODES SMA S MB DPAK T 0220AC ^ 7/ D2PAK 0220AB SGS-THOMSON Ranœ iiLiEOTOiDËi ISOWATT22QAB T0247 ISOTOP1 LOW VF SCHOTTKY RECTIFIERS T j max =150°C (except for 15V & 25V @ 125°C) lo V rrm VF @ lo Max (A) (V) STPS5L25B


    OCR Scan     		PDF 0220AC T0220AB ISOWATT22QAB T0247 STPS5L25B STPS15L25G STPS20L15G STPS10L40CG STPS20L25CG STPS30L40CG 2x15 STPS125U STPS10L25D

    L05P

    Abstract: C-K85 TA78DL05P TA78DL12P
    Text: TOSHIBA-, ELECT RON IC GS N E A R IN T E G R A T E D C IR C U IT S IL IC O N M O N O LITH IC d ËT| 001^334 TA78DL05P— TA78DL24P T-5JWM3 o 5V, 6V, 8V, 9V, 10V, 12V, 15V LOW DROPOUT VOLTAGE REGULATOR Th e T A 7 8 D L series are three-terminal regulators w i t h m a x i m u m output current 250mA, packed in


    OCR Scan     		PDF TA78DL05P-- TA78DL24P 250mA, O-220AB, 200mA 200TMA L05P C-K85 TA78DL05P TA78DL12P

    BUK555-60A

    Abstract: BUK555-60B T0220AB
    Text: PHILIPS INT ER NA TI O N AL bSE D • TllQAEb 0DbM241 Philips Semiconductors PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is Intended for use in


    OCR Scan     		PDF 0DbM241 BUK555-60A/B T0220AB BUK555 -ID/100 BUK555-60A BUK555-60B

    P112

    Abstract: TIP111 darlington npn tip 102 TIP110 TIP112 TIP115 TIP116
    Text: TIP110 TIP111 TIP112 PHILIPS INTERNATIONAL SbE D • 711002b 0043550 224 ■ PHIN T -3 3 -Z SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in m onolithic Darlington circu it fo r audio o u tp u t stages and general purpose am plifier and switching applications. T 0-220A B plastic envelope. P-N-P complements are


    OCR Scan     		PDF TIP110 TIP111 711002b T-33-Z T0-220AB TIP115, TIP116 TIP111 TIP112 P112 darlington npn tip 102 TIP112 TIP115

    thyristor TAG 103 X

    Abstract: thyristor TAG 103 Thyristor TAG TAG thyristor Thyristor TAG 22 400 thyristor st 103 BT150 U-09 thyristor TAG 13 Thyristor TAG 03 400
    Text: PHILIPS INTERNATIONAL bSE 3> WM 711Dß2b 0Gfci23S0 bb2 • P H I N I - J BT150 k _ THYRISTORS Glass-passivated th yristo r in T 0-220A B envelope, featuring sensitive gate triggering as low as 200 juA.


    OCR Scan     		PDF 0L23SÃ BT150 O-220AB O-22QAB M2678 thyristor TAG 103 X thyristor TAG 103 Thyristor TAG TAG thyristor Thyristor TAG 22 400 thyristor st 103 BT150 U-09 thyristor TAG 13 Thyristor TAG 03 400

    RCA413

    Abstract: 2N5415 2N6079 RCA411 2N3439 2N3440 2N5840 2N6175 2N6177 2N6213
    Text: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N] 2N5415


    OCR Scan     		PDF TQ-66Ã 42x42 130x130 2N6177 2N3439 2N5415 2N358S 2N6213 2N6079 RCA413 2N5415 2N6079 RCA411 2N3439 2N3440 2N5840 2N6175 2N6177 2N6213

    IRF3205

    Abstract: IRF3205 E IRF3205 IR MOSFET IRF3205 irf3205 MOSFET
    Text: International lü Rectifier PD - 9.1279C IRF3205 PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = 55V


    OCR Scan     		PDF 1279C IRF3205 O-220 IRF3205 IRF3205 E IRF3205 IR MOSFET IRF3205 irf3205 MOSFET

    2N6103

    Abstract: 300W TRANSISTOR AUDIO AMPLIFIER 40594 Complementary Darlington Audio Power Amplifier 2N5781 2N5954 2N6107 2N6248 2N6292 2N6372
    Text: EPITAXIAL-BASE N-P-N & P-N-P POWER TYPES 1C to 15 A . . . P f to 200 W . . . VCE to 125 V 1« “ - 3 .5 max. Py«10W m ax. ITO-3SI I{ > 8 A max. Py * 40 W max. T O -6 6 * lc * - 6 A max. Py - 40 W max. 1TO -66)* le « 7 A max. Py - 40 W max. VERSA W ATT


    OCR Scan     		PDF IT039I O-2201 lc-15 ITO-31 O-2201 90x90 2N6103 300W TRANSISTOR AUDIO AMPLIFIER 40594 Complementary Darlington Audio Power Amplifier 2N5781 2N5954 2N6107 2N6248 2N6292 2N6372

    BD278

    Abstract: TO-220-AA 2N6033 2N6079 2N6108 2N6102 2N6103 2N6032 2N6098 2N6099
    Text: 2N6033 FAMILY [n-p-n] silicon f j = 50 MHz min; P j = 140 W max DESCRIPTION hFE V/*ES\(SUS) V p e r-t(sus) V/<cu(sill) V V V 2N TYPES l<"» A V « V •CER- "1A Temp.—°C V CF 25 150 V 1.3 1 50 40 5 2 4 2 50 40 0.05« 0.25» 250 8« 5« 250 0.5 1.2 0.2


    OCR Scan     		PDF 2N6033 2N6032 2N6079 2N6103 f2N6111 T0-220AB 2N6108 O-220AA 2N6109 BD278 TO-220-AA 2N6102 2N6098 2N6099

    2N3055 RCA

    Abstract: rca413 RCA411 2N3440 rca rca 2n3055 rca 41013 2N5415 2N3772 RCA BUX 64 2N3439
    Text: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N] 2N5415


    OCR Scan     		PDF TQ-66Ã 42x42 130x130 2N6177 2N3439 2N5415 2N358S 2N6213 2N6079 2N3055 RCA rca413 RCA411 2N3440 rca rca 2n3055 rca 41013 2N5415 2N3772 RCA BUX 64 2N3439

    TIP29 RCA

    Abstract: RCA TIP30
    Text: HARRIS SEMICOND SECTOR SbE D • 43G2E71 0040^42 b^ö W H A S TIP30, TIP30A, TIP30B, TIP30C File Number 988 7=3^7? Epitaxial-Base, Silicon P-N-P VERSAWATT Transistors For Power-Amplifier and High-Speed-Switching Applications F e a tu re s : ■ ■ u ■ 30 W at 25°C case temperature


    OCR Scan     		PDF 43G2E71 TIP30, TIP30A, TIP30B, TIP30C TIP29-series RCA-TIP30, TIP30C TIP29 RCA RCA TIP30

    Thyristor Device Data motorola

    Abstract: No abstract text available
    Text: MOTOROLA Order th is document by C122F1/D SEMICONDUCTOR TECHNICAL DATA C122F1 Silicon Controlled R ectifiers Reverse Blocking Triode Thyristors . . . designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled,


    OCR Scan     		PDF C122F1/D C122F1 Thyristor Device Data motorola

    Untitled

    Abstract: No abstract text available
    Text: SRA1020 THRU SRA1060 TSC S 10.0 AMPS. Schottky Barrier Rectifiers Voltage Range 20 to 60 Volts Current 10.0 Amperes T 0-220A Features -y^ A .185 4.70 .175 4.44) Low forward voltage drop High current capability High reliability High surge current capability


    OCR Scan     		PDF SRA1020 SRA1060 O-220A MIL-STD202,

    Untitled

    Abstract: No abstract text available
    Text: ITH08C06 M ITEL Powerline N-Channel IGBT With Ultrafast Diode SEMICONDUCTOR A dvance Inform ation DS5044-1.2 O ctober 1998 T h e IT H 0 8 C 0 6 is a v e ry r o b u s t n -c h a n n e l, e n h a n c e m e n t m ode in su la te d gate b ip o la r tra n s is to r


    OCR Scan     		PDF ITH08C06 DS5044-1

    BUK454-800A

    Abstract: BUK454-800B T0220AB
    Text: N AUER PHILIPS/DISCRETE fc^E D • bb53T31 D030b35 Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF bb53T31 D030b35 BUK454-800A/B T0220AB BUK454 LIMIBUK454-800A/B BUK454-800A BUK454-800B

    BUK552

    Abstract: BUK552-60A BUK552-60B T0220AB D0307
    Text: N AUER PHILIPS/DISCRETE b^E D • bbSa^Bl DD3D7fiD 45*} ■ APX Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.


    OCR Scan     		PDF D0307BO BUK552-60A T0220AB BUK552 ID/100 BUK552-60B D0307

    P2N20

    Abstract: RFP2N20
    Text: R FP2N 18 RFP2N20 33 H a r r i s N-Channel Enhancem ent-M ode Power Field-E ffect Transistors August 1991 Features Package T O -2 2 0 A B TOP VIEW • 2A, 180V and 200V • rD S °n = 3-5 fi • SOA is Power-Dissipation Limited DRAIN FLANGE • Nanosecond Switching Speeds


    OCR Scan     		PDF RFP2N20 RFP2N18 RFP2N20 92CS-36090 P2N20

    Untitled

    Abstract: No abstract text available
    Text: SCHOTTKY BARRIER DIODE ioa /sov FCQ10A03L 3.H.122 MAX FEATURES 10.31.4051 3 .4 I.1 3 4 U . . ^ / r ô ï â ) UIA o S im ila r to T 0-220A B C ase O F u lly M olded Iso la tio n o E x tre m e ly L ow F o rw a rd V o ltag e D rop o D u a l D iodes—C ath o d e C om m on


    OCR Scan     		PDF FCQ10A03L FCQ10A.