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    Untitled

    Abstract: No abstract text available
    Text: MMDT3906 PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 * Features .055 1.40 .047(1.20) .021REF (0.525)REF Power dissipation. PCM : 0.2 W (Tamp.=25 C) O .018(0.46) .010(0.26) : - 0.2 A C2 Collector -base voltage


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    PDF MMDT3906 OT-363 021REF 026TYP 65TYP) 01-Jan-2006

    MMDT3904

    Abstract: No abstract text available
    Text: MMDT3904 NPN Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-363 * Features .055 1.40 .047(1.20) Power dissipation o .026TYP (0.65TYP) 8 o .021REF (0.525)REF PCM : 0.2 W (Tamp.= 25 C)


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    PDF MMDT3904 OT-363 026TYP 65TYP) 021REF 06-May-2010 MMDT3904

    MMDT2907A

    Abstract: No abstract text available
    Text: MMDT2907A PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 A suffix of "-C" specifies halogen-free * Features .055 1.40 .047(1.20) o .026TYP (0.65TYP) 8 o .021REF (0.525)REF Power dissipation PCM : 0.15 W (Tamp.= 25 C)


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    PDF MMDT2907A OT-363 026TYP 65TYP) 021REF 01-Jan-2007 MMDT2907A

    MMDT2227

    Abstract: PNP2907 NPN2222A 1N914 PNP2907A MMDT2227 equivalent multichip bauelemente
    Text: MMDT2227 NPN-PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 * Features o .055 1.40 .047(1.20) Power dissipation .026TYP (0.65TYP) PCM : 0.2 W (Tamp.= 25 C) O .021REF (0.525)REF Collector current ICM : 0.2/-0.2 A


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    PDF MMDT2227 OT-363 026TYP 65TYP) 021REF 01-Jan-2006 MMDT2227 PNP2907 NPN2222A 1N914 PNP2907A MMDT2227 equivalent multichip bauelemente

    MMDT3906

    Abstract: transistor Vbe 1 Vbe 40 transistor
    Text: MMDT3906 PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 $VXIIL[RI&VSHFLILHVKDORJHQ OHDGIUHH * Features .055 1.40 .047(1.20) .021REF (0.525)REF Power dissipation. PCM : 0.2 W (Tamp.=25 C) O .018(0.46)


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    PDF MMDT3906 OT-363 021REF 026TYP 65TYP) 06-May-2010 MMDT3906 transistor Vbe 1 Vbe 40 transistor

    DTC114E

    Abstract: 1k transistor marking DTA114E marking D3 LI20
    Text: UMD3N NPN-PNP built-in resistors Multi-Chip Digital Transistor Elektronische Bauelemente SOT-363 o .055 1.40 .047(1.20) 8 o .026TYP (0.65TYP) Features .021REF (0.525)REF .053(1.35) .045(1.15) .096(2.45) .085(2.15) * DTA114E and DTC114E transistors are built-in a SOT-363 package.


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    PDF OT-363 026TYP 65TYP) 021REF DTA114E DTC114E OT-363 -200m -500m -50m-100m 1k transistor marking marking D3 LI20

    Untitled

    Abstract: No abstract text available
    Text: BC847PN NPN-PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 o .055 1.40 .047(1.20) 8 o .026TYP (0.65TYP) .021REF (0.525)REF * Features .053(1.35) .045(1.15) .096(2.45) .085(2.15) Power dissipation PCM : 0.2 W (Tamp.= 25 C)


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    PDF BC847PN OT-363 026TYP 65TYP) 021REF 01-Jan-2006

    Untitled

    Abstract: No abstract text available
    Text: MMDT847 NPN Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 .055 1.40 .047(1.20) * Features o 8 o .026TYP (0.65TYP) .021REF (0.525)REF Power dissipation .053(1.35) .045(1.15) .096(2.45) .085(2.15) PCM : 0.3 W (Temp.= 25 C)


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    PDF MMDT847 OT-363 026TYP 65TYP) 021REF 01-Jan-2006 SC70-6

    BC847S

    Abstract: SC70-6
    Text: BC847S NPN Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 .055 1.40 .047(1.20) o 8 o .026TYP (0.65TYP) .021REF (0.525)REF * Features .053(1.35) .045(1.15) .096(2.45) .085(2.15) Power dissipation PCM : 0.3 W (Tamp.= 25 C)


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    PDF BC847S OT-363 026TYP 65TYP) 021REF 01-Jan-2006 SC70-6 BC847S SC70-6

    MMDT4403

    Abstract: transistor EB 525
    Text: MMDT4403 PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 * Features .055 1.40 .047(1.20) .021REF (0.525)REF Power dissipation. PCM : 0.2 W (Temp.=25 C) O .018(0.46) .010(0.26) : - 0.6 A C2 Collector -base voltage


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    PDF MMDT4403 OT-363 021REF 026TYP 65TYP) -50mA 01-Jan-2006 -20mA 100MHz -150mA MMDT4403 transistor EB 525

    MMDT2222A

    Abstract: 1N914
    Text: MMDT2222A NPN Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 * Features .055 1.40 .047(1.20) 8 o .021REF (0.525)REF Power dissipation O Collector current : 0.6 A C1 B2 .018(0.46) .010(0.26) E2 .014(0.35) .006(0.15)


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    PDF MMDT2222A OT-363 021REF 026TYP 65TYP) 01-Jan-2006 MMDT2222A 1N914

    sot-363 n-channel mosfet

    Abstract: 2N7002DW Small Signal MOSFET
    Text: 2N7002DW 115 mAMPS, 60VOLTS, RDS on =7.5 W Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product SOT-363 Small Signal MOSFET 115 mAmps, 60 Volts .055(1.40) .047(1.20) N–Channel SOT–363 o 8 o .026TYP (0.65TYP) .021REF (0.525)REF R ating S ymbol


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    PDF 2N7002DW 60VOLTS, OT-363 026TYP 65TYP) 021REF 01-Jan-2006 500mA sot-363 n-channel mosfet 2N7002DW Small Signal MOSFET

    Untitled

    Abstract: No abstract text available
    Text: MMDT3904 NPN Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 * Features .055 1.40 .047(1.20) Power dissipation o .026TYP (0.65TYP) 8 o .021REF (0.525)REF PCM : 0.2 W (Tamp.= 25 C) O ICM .053(1.35 .045(1.15 .096(2.45)


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    PDF MMDT3904 OT-363 026TYP 65TYP) 021REF 01-Jan-2006

    Untitled

    Abstract: No abstract text available
    Text: MMDT8050 NPN Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 * Features .055 1.40 .047(1.20) Power dissipation o .026TYP (0.65TYP) 8 o .021REF (0.525)REF O PCM : 0.15 W (Tamp.= 25 C) ICM .053(1.35 .045(1.15 .096(2.45)


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    PDF MMDT8050 OT-363 026TYP 65TYP) 021REF 100mA 800mA 01-Jun-2007

    BC857S

    Abstract: No abstract text available
    Text: BC857S PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 .055 1.40 .047(1.20) o 8 o .026TYP (0.65TYP) .021REF (0.525)REF * Features .053(1.35) .045(1.15) .096(2.45) .085(2.15) Power dissipation PCM : 0.3 W (Tamp.= 25 C)


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    PDF BC857S OT-363 026TYP 65TYP) 021REF 01-Jan-2006 BC857S

    MMDT5401

    Abstract: MMDT5551
    Text: MMDT5401 Plastic-Encapsulate Multi-Chip PNP+PNP Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 .055(1.40) .047(1.20) Features .021REF (0.525)REF * Epitaxial Planar Die Construction * Complementary NPN Type Available (MMDT5551) C2 B1


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    PDF MMDT5401 OT-363 021REF MMDT5551) 026TYP 65TYP) -10mA, 100MHz 01-Jan-2006 MMDT5401 MMDT5551

    UMH15N

    Abstract: DTC144T transistor H15 marking H15 multi emitter transistor 003 SOT363
    Text: UMH15N NPN Multi-Chip Built-in Resistors Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 .055 1.40 .047(1.20) Features * Two DTC144T chips in a package o 8 o .026TYP (0.65TYP) .021REF (0.525)REF * Transistor elements are independent, eliminating interference.


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    PDF UMH15N OT-363 DTC144T 026TYP 65TYP) 021REF 01-Jan-2006 100MHz UMH15N transistor H15 marking H15 multi emitter transistor 003 SOT363

    UMH9N

    Abstract: No abstract text available
    Text: UMH9N NPN Multi-Chip Built-in Resistors Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 o .055 1.40 .047(1.20) 8 o .026TYP (0.65TYP) .021REF (0.525)REF * Features * Transistor elements are independent, eliminating interference. .018(0.46)


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    PDF OT-363 026TYP 65TYP) 021REF 01-Jan-2006 UMH9N

    UMH11N

    Abstract: marking h11 H11 sot-363 DTC114E
    Text: UMH11N NPN Multi-Chip Built-in Resistors Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 Features .055 1.40 .047(1.20) * Mounting possible with UMT3 automatic mounting machines. o 8 o .026TYP (0.65TYP) .021REF (0.525)REF * Transistor elements are independent,


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    PDF UMH11N OT-363 026TYP 65TYP) 021REF DTC114E 01-Jan-2006 UMH11N marking h11 H11 sot-363

    UMD3N

    Abstract: Digital Transistor marking D3 DTC114E DTA114E
    Text: UMD3N NPN-PNP built-in resistors Multi-Chip Digital Transistor Elektronische Bauelemente SOT-363 o .055 1.40 .047(1.20) 6 Features .026TYP (0.65TYP) 5 4  * Transistor elements are independent, 1 eliminating interference. (3) (2) R1 3 2 .014(0.35) .006(0.15)


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    PDF OT-363 026TYP 65TYP) 021REF DTA114E DTC114E OT-363 -200m -500m -50m-100m UMD3N Digital Transistor marking D3

    marking code 22

    Abstract: SOT 363 marking CODE 039
    Text: KS05K5 VOLTAGE: 5.0 V Elektronische Bauelemente 100 W Transient Voltage Suppressors Diode RoHS Compliant Product DESCRIPTION SOT-363 . Designed to protect voltage sensitive components from ESD. . Excellent clamping capability, low leakage and fast response.


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    PDF KS05K5 OT-363 026TYP 65TYP) 021REF 24-Aug-2007 marking code 22 SOT 363 marking CODE 039

    MMDT4401

    Abstract: No abstract text available
    Text: MMDT4401 NPN Plastic-Encapsulate Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product * Features SOT-363 .055 1.40 .047(1.20) : 0.2 W (Temp.=25 C) O .018(0.46) .010(0.26) : 0.6 A C2 Collector-Base vVoltage B1 E1 .014(0.35) .006(0.15) .006(0.15)


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    PDF MMDT4401 OT-363 021REF 026ce 01-Jan-2006 100MHz 150mA MMDT4401

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components RB480KS Features • • • • • • 40 Volts Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information


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    PDF RB480KS OT-353

    Diode Marking .006

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# RB480K Features • • • 40 Volts Schottky Barrier Diode Low Current Rectification High Reliability Marking: 3T SOT-343 Maximum Ratings


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    PDF RB480K OT-343 100mAdc) 10Vdc) 40Vdc) 026TYP 021REF Diode Marking .006