Untitled
Abstract: No abstract text available
Text: MMDT3906 PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 * Features .055 1.40 .047(1.20) .021REF (0.525)REF Power dissipation. PCM : 0.2 W (Tamp.=25 C) O .018(0.46) .010(0.26) : - 0.2 A C2 Collector -base voltage
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MMDT3906
OT-363
021REF
026TYP
65TYP)
01-Jan-2006
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MMDT3904
Abstract: No abstract text available
Text: MMDT3904 NPN Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-363 * Features .055 1.40 .047(1.20) Power dissipation o .026TYP (0.65TYP) 8 o .021REF (0.525)REF PCM : 0.2 W (Tamp.= 25 C)
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MMDT3904
OT-363
026TYP
65TYP)
021REF
06-May-2010
MMDT3904
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MMDT2907A
Abstract: No abstract text available
Text: MMDT2907A PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 A suffix of "-C" specifies halogen-free * Features .055 1.40 .047(1.20) o .026TYP (0.65TYP) 8 o .021REF (0.525)REF Power dissipation PCM : 0.15 W (Tamp.= 25 C)
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MMDT2907A
OT-363
026TYP
65TYP)
021REF
01-Jan-2007
MMDT2907A
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MMDT2227
Abstract: PNP2907 NPN2222A 1N914 PNP2907A MMDT2227 equivalent multichip bauelemente
Text: MMDT2227 NPN-PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 * Features o .055 1.40 .047(1.20) Power dissipation .026TYP (0.65TYP) PCM : 0.2 W (Tamp.= 25 C) O .021REF (0.525)REF Collector current ICM : 0.2/-0.2 A
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MMDT2227
OT-363
026TYP
65TYP)
021REF
01-Jan-2006
MMDT2227
PNP2907
NPN2222A
1N914
PNP2907A
MMDT2227 equivalent
multichip bauelemente
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MMDT3906
Abstract: transistor Vbe 1 Vbe 40 transistor
Text: MMDT3906 PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 $VXIIL[RI&VSHFLILHVKDORJHQ OHDGIUHH * Features .055 1.40 .047(1.20) .021REF (0.525)REF Power dissipation. PCM : 0.2 W (Tamp.=25 C) O .018(0.46)
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MMDT3906
OT-363
021REF
026TYP
65TYP)
06-May-2010
MMDT3906
transistor Vbe 1
Vbe 40 transistor
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DTC114E
Abstract: 1k transistor marking DTA114E marking D3 LI20
Text: UMD3N NPN-PNP built-in resistors Multi-Chip Digital Transistor Elektronische Bauelemente SOT-363 o .055 1.40 .047(1.20) 8 o .026TYP (0.65TYP) Features .021REF (0.525)REF .053(1.35) .045(1.15) .096(2.45) .085(2.15) * DTA114E and DTC114E transistors are built-in a SOT-363 package.
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OT-363
026TYP
65TYP)
021REF
DTA114E
DTC114E
OT-363
-200m
-500m
-50m-100m
1k transistor marking
marking D3
LI20
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Untitled
Abstract: No abstract text available
Text: BC847PN NPN-PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 o .055 1.40 .047(1.20) 8 o .026TYP (0.65TYP) .021REF (0.525)REF * Features .053(1.35) .045(1.15) .096(2.45) .085(2.15) Power dissipation PCM : 0.2 W (Tamp.= 25 C)
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BC847PN
OT-363
026TYP
65TYP)
021REF
01-Jan-2006
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Untitled
Abstract: No abstract text available
Text: MMDT847 NPN Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 .055 1.40 .047(1.20) * Features o 8 o .026TYP (0.65TYP) .021REF (0.525)REF Power dissipation .053(1.35) .045(1.15) .096(2.45) .085(2.15) PCM : 0.3 W (Temp.= 25 C)
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MMDT847
OT-363
026TYP
65TYP)
021REF
01-Jan-2006
SC70-6
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BC847S
Abstract: SC70-6
Text: BC847S NPN Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 .055 1.40 .047(1.20) o 8 o .026TYP (0.65TYP) .021REF (0.525)REF * Features .053(1.35) .045(1.15) .096(2.45) .085(2.15) Power dissipation PCM : 0.3 W (Tamp.= 25 C)
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BC847S
OT-363
026TYP
65TYP)
021REF
01-Jan-2006
SC70-6
BC847S
SC70-6
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MMDT4403
Abstract: transistor EB 525
Text: MMDT4403 PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 * Features .055 1.40 .047(1.20) .021REF (0.525)REF Power dissipation. PCM : 0.2 W (Temp.=25 C) O .018(0.46) .010(0.26) : - 0.6 A C2 Collector -base voltage
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MMDT4403
OT-363
021REF
026TYP
65TYP)
-50mA
01-Jan-2006
-20mA
100MHz
-150mA
MMDT4403
transistor EB 525
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MMDT2222A
Abstract: 1N914
Text: MMDT2222A NPN Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 * Features .055 1.40 .047(1.20) 8 o .021REF (0.525)REF Power dissipation O Collector current : 0.6 A C1 B2 .018(0.46) .010(0.26) E2 .014(0.35) .006(0.15)
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MMDT2222A
OT-363
021REF
026TYP
65TYP)
01-Jan-2006
MMDT2222A
1N914
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sot-363 n-channel mosfet
Abstract: 2N7002DW Small Signal MOSFET
Text: 2N7002DW 115 mAMPS, 60VOLTS, RDS on =7.5 W Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product SOT-363 Small Signal MOSFET 115 mAmps, 60 Volts .055(1.40) .047(1.20) N–Channel SOT–363 o 8 o .026TYP (0.65TYP) .021REF (0.525)REF R ating S ymbol
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2N7002DW
60VOLTS,
OT-363
026TYP
65TYP)
021REF
01-Jan-2006
500mA
sot-363 n-channel mosfet
2N7002DW
Small Signal MOSFET
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Untitled
Abstract: No abstract text available
Text: MMDT3904 NPN Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 * Features .055 1.40 .047(1.20) Power dissipation o .026TYP (0.65TYP) 8 o .021REF (0.525)REF PCM : 0.2 W (Tamp.= 25 C) O ICM .053(1.35 .045(1.15 .096(2.45)
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MMDT3904
OT-363
026TYP
65TYP)
021REF
01-Jan-2006
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Untitled
Abstract: No abstract text available
Text: MMDT8050 NPN Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 * Features .055 1.40 .047(1.20) Power dissipation o .026TYP (0.65TYP) 8 o .021REF (0.525)REF O PCM : 0.15 W (Tamp.= 25 C) ICM .053(1.35 .045(1.15 .096(2.45)
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MMDT8050
OT-363
026TYP
65TYP)
021REF
100mA
800mA
01-Jun-2007
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BC857S
Abstract: No abstract text available
Text: BC857S PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 .055 1.40 .047(1.20) o 8 o .026TYP (0.65TYP) .021REF (0.525)REF * Features .053(1.35) .045(1.15) .096(2.45) .085(2.15) Power dissipation PCM : 0.3 W (Tamp.= 25 C)
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BC857S
OT-363
026TYP
65TYP)
021REF
01-Jan-2006
BC857S
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MMDT5401
Abstract: MMDT5551
Text: MMDT5401 Plastic-Encapsulate Multi-Chip PNP+PNP Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 .055(1.40) .047(1.20) Features .021REF (0.525)REF * Epitaxial Planar Die Construction * Complementary NPN Type Available (MMDT5551) C2 B1
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MMDT5401
OT-363
021REF
MMDT5551)
026TYP
65TYP)
-10mA,
100MHz
01-Jan-2006
MMDT5401
MMDT5551
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UMH15N
Abstract: DTC144T transistor H15 marking H15 multi emitter transistor 003 SOT363
Text: UMH15N NPN Multi-Chip Built-in Resistors Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 .055 1.40 .047(1.20) Features * Two DTC144T chips in a package o 8 o .026TYP (0.65TYP) .021REF (0.525)REF * Transistor elements are independent, eliminating interference.
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UMH15N
OT-363
DTC144T
026TYP
65TYP)
021REF
01-Jan-2006
100MHz
UMH15N
transistor H15
marking H15
multi emitter transistor
003 SOT363
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UMH9N
Abstract: No abstract text available
Text: UMH9N NPN Multi-Chip Built-in Resistors Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 o .055 1.40 .047(1.20) 8 o .026TYP (0.65TYP) .021REF (0.525)REF * Features * Transistor elements are independent, eliminating interference. .018(0.46)
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OT-363
026TYP
65TYP)
021REF
01-Jan-2006
UMH9N
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UMH11N
Abstract: marking h11 H11 sot-363 DTC114E
Text: UMH11N NPN Multi-Chip Built-in Resistors Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 Features .055 1.40 .047(1.20) * Mounting possible with UMT3 automatic mounting machines. o 8 o .026TYP (0.65TYP) .021REF (0.525)REF * Transistor elements are independent,
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UMH11N
OT-363
026TYP
65TYP)
021REF
DTC114E
01-Jan-2006
UMH11N
marking h11
H11 sot-363
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UMD3N
Abstract: Digital Transistor marking D3 DTC114E DTA114E
Text: UMD3N NPN-PNP built-in resistors Multi-Chip Digital Transistor Elektronische Bauelemente SOT-363 o .055 1.40 .047(1.20) 6 Features .026TYP (0.65TYP) 5 4 * Transistor elements are independent, 1 eliminating interference. (3) (2) R1 3 2 .014(0.35) .006(0.15)
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OT-363
026TYP
65TYP)
021REF
DTA114E
DTC114E
OT-363
-200m
-500m
-50m-100m
UMD3N
Digital Transistor
marking D3
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marking code 22
Abstract: SOT 363 marking CODE 039
Text: KS05K5 VOLTAGE: 5.0 V Elektronische Bauelemente 100 W Transient Voltage Suppressors Diode RoHS Compliant Product DESCRIPTION SOT-363 . Designed to protect voltage sensitive components from ESD. . Excellent clamping capability, low leakage and fast response.
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KS05K5
OT-363
026TYP
65TYP)
021REF
24-Aug-2007
marking code 22
SOT 363 marking CODE 039
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MMDT4401
Abstract: No abstract text available
Text: MMDT4401 NPN Plastic-Encapsulate Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product * Features SOT-363 .055 1.40 .047(1.20) : 0.2 W (Temp.=25 C) O .018(0.46) .010(0.26) : 0.6 A C2 Collector-Base vVoltage B1 E1 .014(0.35) .006(0.15) .006(0.15)
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MMDT4401
OT-363
021REF
026ce
01-Jan-2006
100MHz
150mA
MMDT4401
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Untitled
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components RB480KS Features • • • • • • 40 Volts Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information
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RB480KS
OT-353
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Diode Marking .006
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# RB480K Features • • • 40 Volts Schottky Barrier Diode Low Current Rectification High Reliability Marking: 3T SOT-343 Maximum Ratings
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RB480K
OT-343
100mAdc)
10Vdc)
40Vdc)
026TYP
021REF
Diode Marking .006
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