TRANSISTOR SMD MARKING CODE RG
Abstract: TRANSISTOR SMD CODE 6.8 BUK9
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology
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BUK9614-55
OT404
BUK9614-55
/\\Roarer\root\data13\imaging\BITTING\cpl
mismatch\20000819\081.
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TRANSISTOR SMD MARKING CODE RG
TRANSISTOR SMD CODE 6.8
BUK9
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Zener diode smd marking sot223
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technolgy
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BUK7880-55
OT223
BUK7880-55
BUK788055
OT223
Zener diode smd marking sot223
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45118
Abstract: TRANSISTOR SMD MARKING CODE RG F/45118
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology
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BUK9608-55
OT404
drT404
BUK9608-55
/\\Roarer\root\data13\imaging\BITTING\cpl
mismatch\20000819\081.
\BUK9608-55
45118
TRANSISTOR SMD MARKING CODE RG
F/45118
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applications of Transistor BUK 452
Abstract: buk catalog buk9514
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has
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BUK9514-55
O220AB
BUK9514-55
/\\Roarer\root\data13\imaging\BITTING\cpl
mismatch\20000819\081.
\BUK9514-55
applications of Transistor BUK 452
buk catalog
buk9514
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buk7535
Abstract: BUK753
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance
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BUK7535-55
O220AB
BUK753555
BUK753555
BUK753555A
BUK7535-55
buk7535
BUK753
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transistor smd marking 187
Abstract: TRANSISTOR SMD MARKING CODE ld BUK7608-55A
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device
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BUK7608-55
OT404
OT404
BUK7608-55
BUK760855A
BUK7608-55A
transistor smd marking 187
TRANSISTOR SMD MARKING CODE ld
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device
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BUK7614-55
OT404
BUK761455
BUK7614-
BUK7614Marking
OT404
BUK7614-55
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PMC91
Abstract: PM431
Text: CD-ROM Documents Download a current version of this list from our web site New documents are posted on http://www.pmc-sierra.com/docs/cdrom/doclist.pdf http://www.pmc-sierra.com/register/w-new_docs.asp Asynchronous/PDH Document Type Issue QDSX Short Form Data Sheet
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PM4314
11-Mar-98
PMC-941034
10-Feb-97
PMC-950857
PM4341A
PMC-920108
17-MC-930531
27-Jul-95
PMC91
PM431
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temic watch ic
Abstract: No abstract text available
Text: e1217X 32-kHz Standard Watch CMOS IC Features D 32-kHz oscillator D Integrated capacitors, mask selectable D Mask options for pad designation, motor period and D 1.3 - 1.8 V operating voltage range motor pulse width D 180 nA typical current consumption D Voltage regulator
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e1217X
32-kHz
e1217X
D-74025
01-Apr-98
temic watch ic
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PBYR1025D
Abstract: PBYR10-25d
Text: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR1025D series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance GENERAL DESCRIPTION
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PBYR1025D
OT428
OT428
PBYR1020D
PBYR10-25d
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BUK9535-55
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has
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BUK9535-55
O220AB
BUK9535-55
/\\Roarer\root\data13\imaging\BITTING\cpl
mismatch\20000819\08.
\BUK9535-55A
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING C 3 IS U N P U B L IS H E D . COPYRIGHT RELEASED BY AMP 19 INCORPORATED. FOR PUBLICATION A LL RIGHTS 2 ,19 LOG RESERVED. CE D IS T REVISION' 16 LTR D E S C R IP T IO N DATE REVISE PER QAOO —0077 —01 1. DIMENSIONS 2. CONNECTOR IN [ ] ARE
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D2MAR99
01APR98
01APR98
23FEB
\TECworker\jobs\nsrvQ38a\6934\1
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Untitled
Abstract: No abstract text available
Text: TEMIC el217X S e m i c o n d u c t o r s 32-kHz Standard Watch C M O S IC Features • 32-kHz oscillator • Integrated capacitors, mask Selectable • 1.3 - 1.8 V operating voltage range • Mask options for pad designation, motor period and motor pulse width
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OCR Scan
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PDF
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el217X
32-kHz
el217X
D-74025
Ol-Apr-98
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING C 3 IS U N P U B L IS H E D . COPYRIGHT 19 RELEASED BY AMP FOR INCORPORATED. A LL PUBLICATION RIGHTS 2 ,19 LOG RESERVED. CE REVISION' D IS T 16 LTR G 1. DIMENSIONS D E S C R IP T IO N REVISE PER QAOO —0284 —01 DATE DWN 60CT01 CK APVD
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60CT01
23FEB
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBUSHED. @ COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ,19 LOC ALL RIGHTS RESERVED. CE DIST 16 REVISIONS LTH DESCRIPTION DATE REVISE PER 0A 0 0-01 0 9 -0 0 04FEB00 OWN APVD CK KC 1. DIMENSIONS IN [ ] ARE IN INCHES D 2. CONNECTOR LOSS: 0.75dB MAX.
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04FEB00
03MAR98
01APR98
01APR9B
25jum
23FEB95
29JAN99_
AMP32258
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PPA-GF30
Abstract: ppagf30 7-966658-5 UJ 99 amp ppa-gf30 hella modu amp hella e2 bosch AMP MODU II
Text: 8 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION VERTRAULICHE UNVEROEFFENTLICHTE ZEICHNUNG FREI FIJFR VERQFFFFNTLICHUNS COPYRIGHT 19BY AMP INCORPORATED. ^ I S S l ^ S S S u L T F N K o d ie ru n g A -F * ,19-. . ï MATED WITH. PASSEND ZU. M LOC DI5T
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A95-52007
73-MAY-97
01-APR-98
n-APR-00
09-MAY-00
25JAN05
2-966658-X
76-AUG-06
07-AUG-07
4-FEB-95
PPA-GF30
ppagf30
7-966658-5
UJ 99
amp ppa-gf30
hella
modu amp
hella e2
bosch
AMP MODU II
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036am
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBUSHED. COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ,19 LOC ALL RIGHTS RESERVED. CE DIST 16 REVISIONS LTR D DESCRIPTION DWN DATE REVISE PER OAOO—0 4 3 6 —00 25MAY00 APVD JWD MK 1. D IM E N SIO N S IN [ ] A R E IN IN C H ES
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25MAY00
02MAR99
01APR98
01APR96
23FEB95
p264Q
00/edm
036am
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBUSHED. @ COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ,19 LOC ALL RIGHTS RESERVED. CE DIST 16 REVISIONS LTH K DESCRIPTION OWN DATE ADD - 9 7 PER OAQO-0250-00 27MAR00 APVD JWD MK 1. DIMENSIONS IN [ ] ARE IN INCHES 2. CONNECTOR LOSS: 0.5dB MAX.
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OAQO-0250-00
27MAR00
25jum
23FEB95
18JAN99
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