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    BUK9 Price and Stock

    Nexperia BUK9Y4R8-60E,115

    MOSFET N-CH 60V 100A LFPAK56
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    DigiKey BUK9Y4R8-60E,115 Reel 16,130 1,500
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    TTI BUK9Y4R8-60E,115 Reel 1,500 1,500
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    Nexperia BUK9620-100B,118

    MOSFET N-CH 100V 63A D2PAK
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    DigiKey BUK9620-100B,118 Reel 13,600 800
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    Newark BUK9620-100B,118 Cut Tape 84 1
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    EBV Elektronik BUK9620-100B,118 800 54 Weeks 800
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    Nexperia BUK9K52-60E,115

    MOSFET 2N-CH 60V 16A LFPAK56D
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    DigiKey BUK9K52-60E,115 Reel 12,000 1,500
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    TME BUK9K52-60E,115 1
    • 1 $0.659
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    EBV Elektronik BUK9K52-60E,115 3,000 15 Weeks 1,500
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    Nexperia BUK9K25-40RAX

    MOSFET 2N-CH 40V 18.2A LFPAK56D
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    DigiKey BUK9K25-40RAX Reel 6,000 1,500
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    Mouser Electronics BUK9K25-40RAX 3,000
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    • 10 $0.841
    • 100 $0.654
    • 1000 $0.494
    • 10000 $0.403
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    Nexperia BUK9M9R5-40HX

    MOSFET N-CH 40V 40A LFPAK33
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BUK9M9R5-40HX Reel 6,000 1,500
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    Mouser Electronics BUK9M9R5-40HX 55,758
    • 1 $0.55
    • 10 $0.548
    • 100 $0.446
    • 1000 $0.378
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    Find more BUK9 price and stock on Findchips.com

    BUK9 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUK9006-55A Philips Semiconductors N-channel Enhancement mode field-effect power Transistor Original PDF
    BUK9107-40ATC NXP Semiconductors BUK9107-40ATC - TrenchPLUS logic level FET - Configuration: Single N-channel ; Current sensor: no ; ID DC: 75 A; RDS(on): 6.2@10V7@5V mOhm; Temperature sensor: yes ; Thermal Resistance: 0.55 K/W; VDSmax: 40 V Original PDF
    BUK9107-40ATC Philips Semiconductors TrenchPLUS logic level FET Original PDF
    BUK9107-40ATC,118 NXP Semiconductors TrenchPLUS logic level FET - Configuration: Single N-channel ; Current sensor: no ; ID DC: 75 A; RDS(on): 6.2@10V7@5V mOhm; Temperature sensor: yes ; Thermal Resistance: 0.55 K/W; VDSmax: 40 V; Package: SOT426 (D2PAK); Container: Tape reel smd Original PDF
    BUK9107-40ATC/T3 NXP Semiconductors TrenchPLUS logic level FET - Configuration: Single N-channel ; Current sensor: no ; ID DC: 75 A; RDS(on): 6.2@10V7@5V mOhm; Temperature sensor: yes ; Thermal Resistance: 0.55 K/W; VDSmax: 40 V Original PDF
    BUK9107-55ATE NXP Semiconductors BUK9107-55ATE - TrenchPLUS logic level FET - Configuration: Single N-channel ; Current sensor: no ; ID DC: 75 A; RDS(on): 6.2@10V7@5V mOhm; Temperature sensor: yes ; Thermal Resistance: 0.55 K/W; VDSmax: 55 V Original PDF
    BUK9107-55ATE Philips Semiconductors TrenchPLUS logic level FET Original PDF
    BUK9107-55ATE,118 NXP Semiconductors BUK9107-55 - TRANSISTOR 75 A, 55 V, 0.0077 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-5, FET General Purpose Power Original PDF
    BUK9107-55ATE,118 Philips Semiconductors FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 55V 75A D2PAK Original PDF
    BUK9107-55ATE/T3 NXP Semiconductors TrenchPLUS logic level FET - Configuration: Single N-channel ; Current sensor: no ; ID DC: 75 A; RDS(on): 6.2@10V7@5V mOhm; Temperature sensor: yes ; Thermal Resistance: 0.55 K/W; VDSmax: 55 V Original PDF
    BUK9120-48TC Philips Semiconductors PowerMOS transistor Voltage clamped logic level FET with temperature sensing diodes Original PDF
    BUK912048TCT3 Philips Semiconductors PowerMOS transistor Voltage clamped logic level FET with temperature sensing diodes Original PDF
    BUK9207-30B NXP Semiconductors BUK9207-30B - Trenchmos logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 12 nC; RDS(on): 5@10V7@5V33@7.7V mOhm; Thermal Resistance: 0.95 K/W; VDSmax: 30 V Original PDF
    BUK9207-30B Philips Semiconductors Trenchmos logic level FET Original PDF
    BUK9207-30B,118 NXP Semiconductors BUK9207 - TRANSISTOR 75 A, 30 V, 0.0077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, PLASTIC, SC-63, TO-252, D-PAK-3, FET General Purpose Power Original PDF
    BUK9207-30B,118 NXP Semiconductors Trenchmos logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 12 nC; RDS(on): 5@10V7@5V33@7.7V mOhm; Thermal Resistance: 0.95 K/W; VDSmax: 30 V; Package: SOT428 (DPAK); Container: Tape reel smd Original PDF
    BUK9207-30B/T3 NXP Semiconductors Trenchmos logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 12 nC; RDS(on): 5@10V7@5V33@7.7V mOhm; Thermal Resistance: 0.95 K/W; VDSmax: 30 V Original PDF
    BUK9209-40B NXP Semiconductors BUK9209-40B - Trenchmos logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 12 nC; RDS(on): 7@10V9@5V10@4.5V mOhm; Thermal Resistance: 0.95 K/W; VDSmax: 40 V Original PDF
    BUK9209-40B Philips Semiconductors Original PDF
    BUK9209-40B,118 NXP Semiconductors BUK9209 - TRANSISTOR 75 A, 40 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3, FET General Purpose Power Original PDF
    ...

    BUK9 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUK9Y14-40B

    Abstract: No abstract text available
    Text: BUK9Y14-40B N-channel TrenchMOS logic level FET Rev. 03 — 2 June 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High Performance Automotive (HPA) TrenchMOS technology. This


    Original     		PDF BUK9Y14-40B BUK9Y14-40B

    BUK9907-55ATE

    Abstract: No abstract text available
    Text: BUK9907-55ATE N-channel TrenchPLUS logic level FET Rev. 02 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for


    Original     		PDF BUK9907-55ATE BUK9907-55ATE

    55A4

    Abstract: BUK98150-55A SC-73
    Text: BUK98150-55A N-channel TrenchMOS logic level FET Rev. 04 — 11 June 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology.


    Original     		PDF BUK98150-55A BUK98150-55A 55A4 SC-73

    buk9520-100b

    Abstract: c774
    Text: BUK9520-100B N-channel TrenchMOS logic level FET Rev. 01 — 6 May 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9520-100B AEC-Q101 buk9520-100b c774

    transistor fet 3884

    Abstract: MS-013 SO20 AN10273
    Text: BUK9MGP-55PTS Dual TrenchPLUS logic level FET Rev. 01 — 14 May 2009 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring


    Original     		PDF BUK9MGP-55PTS BUK9MGP-55PTS transistor fet 3884 MS-013 SO20 AN10273

    BUK9620-100B

    Abstract: c778 c776 BUK9620 10S100
    Text: BUK9620-100B N-channel TrenchMOS logic level FET Rev. 02 — 6 May 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9620-100B AEC-Q101 BUK9620-100B c778 c776 BUK9620 10S100

    Untitled

    Abstract: No abstract text available
    Text: BUK9637-100E N-channel TrenchMOS logic level FET 5 October 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high


    Original     		PDF BUK9637-100E OT404

    MIFARE DESFire

    Abstract: No abstract text available
    Text: BUK9K29-100E Dual N-channel TrenchMOS logic level FET 28 August 2012 Product data sheet 1. Product profile 1.1 General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use


    Original     		PDF BUK9K29-100E LFPAK56D MIFARE DESFire

    9215055A

    Abstract: No abstract text available
    Text: DP AK BUK92150-55A N-channel TrenchMOS logic level FET 12 June 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK92150-55A 9215055A

    Untitled

    Abstract: No abstract text available
    Text: Thermal RC network Foster SPICE thermal model Symbol Rth(j-mb) Parameter thermal resistance from junction to mounting base BUK9Y12-55B Conditions Cth1 4.181E-02 F Cth2 6.609E-03 F Cth3 1.555E-03 F Cth4 3.660E-04 F Cth5 8.612E-05 F Cth6 2.026E-05 F Cth7 4.768E-06 F


    Original     		PDF BUK9Y12-55B 660E-04 612E-05 026E-05 768E-06 122E-06 566E-01 520E-01 699E-02 150E-02

    Untitled

    Abstract: No abstract text available
    Text: Thermal RC network Foster SPICE thermal model Symbol Rth(j-mb) Parameter thermal resistance from junction to mounting base BUK9Y40-55B Conditions Cth1 1.131E-02 F Cth2 1.786E-03 F Cth3 4.474E-04 F Cth4 1.121E-04 F Cth5 2.808E-05 F Cth6 7.035E-06 F Cth7 1.763E-06 F


    Original     		PDF BUK9Y40-55B 121E-04 808E-05 035E-06 763E-06 416E-07 822E-01 843E-01 977E-02 344E-02

    915055

    Abstract: No abstract text available
    Text: SO T2 23 BUK98150-55A N-channel TrenchMOS logic level FET 19 March 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK98150-55A 915055

    Untitled

    Abstract: No abstract text available
    Text: Thermal RC network Foster SPICE thermal model Symbol Rth(j-mb) Parameter thermal resistance from junction to mounting base BUK9Y11-30B Conditions Cth1 2.589E-02 F Cth2 4.042E-03 F Cth3 9.598E-04 F Cth4 2.279E-04 F Cth5 5.413E-05 F Cth6 1.285E-05 F Cth7 3.053E-06 F


    Original     		PDF BUK9Y11-30B 279E-04 413E-05 285E-05 053E-06 249E-07 498E-01 148E-01 929E-02 473E-03

    Untitled

    Abstract: No abstract text available
    Text: SO T2 23 BUK9875-100A N-channel TrenchMOS logic level FET 19 March 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9875-100A

    buk954r2

    Abstract: BUK95 BUK954R2-55B
    Text: BUK954R2-55B N-channel TrenchMOS logic level FET Rev. 03 — 8 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK954R2-55B buk954r2 BUK95 BUK954R2-55B

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56D BUK9K17-60E Dual N-channel 60 V, 17 mΩ logic level MOSFET 19 March 2014 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101


    Original     		PDF BUK9K17-60E LFPAK56D

    BUK92150-55A

    Abstract: No abstract text available
    Text: BUK92150-55A N-channel TrenchMOS logic level FET Rev. 04 — 8 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK92150-55A BUK92150-55A

    BUK9609-40B

    Abstract: BUK95
    Text: BUK9609-40B N-channel TrenchMOS logic level FET Rev. 02 — 7 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9609-40B BUK9609-40B BUK95

    D970

    Abstract: TRANSISTOR D972 BUK9C10-65BIT d973 BUK9C10 th d970 d787 D972 D976 transistor D973
    Text: BUK9C10-65BIT N-channel TrenchPLUS logic level FET Rev. 02 — 21 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in SOT427. Device is manufactured using NXP High-Performance TrenchPLUS technology, featuring very low


    Original     		PDF BUK9C10-65BIT OT427. AEC-Q101 D970 TRANSISTOR D972 BUK9C10-65BIT d973 BUK9C10 th d970 d787 D972 D976 transistor D973

    BUK9237-55A

    Abstract: buk9237
    Text: BUK9237-55A TrenchMOS logic level FET Rev. 01 — 03 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.


    Original     		PDF BUK9237-55A BUK9237-55A OT428 buk9237

    BUK9230-55A

    Abstract: No abstract text available
    Text: BUK9230-55A TrenchMOS logic level FET Rev. 02 — 10 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.


    Original     		PDF BUK9230-55A BUK9230-55A OT428

    BUK9212-55B

    Abstract: No abstract text available
    Text: BUK9212-55B TrenchMOS logic level FET Rev. 02 — 12 December 2003 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.


    Original     		PDF BUK9212-55B M3D300 OT428 BUK9212-55B

    BUK98150-55A

    Abstract: ID16 SC-73
    Text: BUK98150-55A TrenchMOS logic level FET Rev. 01 — 03 October 2000 M3D087 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.


    Original     		PDF BUK98150-55A M3D087 BUK98150-55A OT223 SC-73) ID16 SC-73

    BUK9120-48TC

    Abstract: SOT426
    Text: Philips Semiconductors Product specification PowerMOS transistor Voltage clamped logic level FET with temperature sensing diodes BUK9120-48TC GENERAL DESCRIPTION Protected N-channel enhancement mode logic level field-effect power transistor in a plastic envelope


    Original     		PDF BUK9120-48TC OT426 BUK9120-48TC SOT426