F233
Abstract: IRF230
Text: 7964142 k | 7WHS OGOSG^HSf SAMSUNG SEM ICON DU CTOR I N C _ 98D 0 5 0 9 4 _D T * 3 V l I "-CHANNEL POWER MOSFETS IRF230/231/232/233 FEATURES LOW RDS on Improved inductive ruggedness Fast switching times Rugged poiysilicon gate cell structure Low input capacitance
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IRF230/231/232/233
IRF231
00GS435
F233
IRF230
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1RF9130
Abstract: L 9132 diode 9532 F913 IR 9530 irf 131 on irfp9131 IRF9130-2
Text: '"7964142 " S AM S U N G SEMICONDUCTO nhHJ,4d UUU54US 7 mFSi 30/913179132/9133 ^ 1RFP9130/9131 /9132/9133 IRF9530/9531Z9532/9533 Preliminary Specifications P -C H A N N E L T a -1 0 0 Volt, 0.30 Ohm SFET 0D0S40S ? PRODUCT SUMMARY Part Number Vus RoS on Id
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1RFP9130/9131
IRF9530/9531Z9532/9533
UUU54US
0D0S40S
FP9130,
FP9131,
IRF9531
IRF/IRFP9132.
FP9133,
00GS435
1RF9130
L 9132
diode 9532
F913
IR 9530
irf 131 on
irfp9131
IRF9130-2
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5109d
Abstract: No abstract text available
Text: 7 9 6 4 142 SAMSUNG SEMICONDUCTOR Ifl DE I 7 ^ 4 1 4 5 98D 0 51 09 TNO 0 0 0 5 1 0 e] 3 D f-rj?-// N-CHANNEL POWER MOSFETS IRF320/321/322/323 FEATURES • LOW RoS on • • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure
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000510e
IRF320/321/322/323
IRF321
IRF322
IRF323
00GS435
5109d
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ssh20n50
Abstract: ssm20n45 20N45 2on50 20n50
Text: D E j ? ci b m 4 2 000S3Û7 1 | : N-CHÂNNEL * POWER MOSFETS ? / \ -fó SAMSUNG SE MI CO NDUCT OR INC 2 SSM20N45/20N50 SSH20N45/20N50 ’ •> f Preliminary Specifications PRODUCT SUMMARY 500 Volt, 0.3 Ohm SFET V ds RoS on Id SSM20N45 450V 0.3 0 20A SSM20N50
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SSM20N45/20N50
SSH20N45/20N50
000S3
SSM20N45
SSM20N50
SSM20N50
00GS435
ssh20n50
20N45
2on50
20n50
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IRFP220
Abstract: IRFP222 IN 414b B diode IRFP223
Text: 7964142 -•••• . SAMSUNG SEMICONDUCTOR I 7 ^ 4 1 4 5 DOGSI b IRFP220/221/222/223 DE i IN C □ 9 8 D 0 5169 | D7 ^ 39- / / N-CHANNEL POWER MOSFETS FEATURES Low RoS on Improved inductive riiggedness Fast switching times Rugged polysilicon gate cell structure
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PDF
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IRFP220/221/222/223
IRFP220
IRFP221
IRFP222
IRFP223
00GS435
IRFP220
IN 414b B diode
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diode 9232
Abstract: 1RF9630 IRFP9230 irf963 IRF9632 IRF9630 9232
Text: F LÌI IRF9230/9231Z9232/9233 ^ ÏRFP9230/9231 /9232/923Ä IRF9630/9631/9632/9633 DE I 7^4145 D0QS417 3 | p -c h a n n e l POWER MOSFETS Preliminary Specifications PRODUCT SUMMARY -2 0 0 Volt, 0.8 Ohm SFET 7964142 SAMSUNG SEM ICONDUCTOR Part Number Vos RoS on
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IRF9230/9231Z9232/9233
RFP9230/9231
IRF9630/9631/9632/9633
D0QS417
IRF/IRFP9230,
IRF9630
IRF/IRFP9231,
IRF963
IRF/IRFP9232,
IRF9632
diode 9232
1RF9630
IRFP9230
9232
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3n70
Abstract: sem 304 SSM3N70 E5304
Text: 7 964142 S A M S U N G S E M I C O N D U C T O R . INC DE 1 7T b 4 1 4 E □□□5304 jCia 98D .053 0 4 i ^ 1^ ' 1 D N -C H A N Ñ E lT 0 ? ' " POWER MOSFETS SSM3N70 FEATURES / • • • • • • • • • Low R d s oii ' at high voltage Improved inductive ruggedness
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PDF
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SSM3N70
00GS435
3n70
sem 304
SSM3N70
E5304
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Untitled
Abstract: No abstract text available
Text: - Z a ê A i^ ^ S A M S U N ^ ^fi íP k n r n M n i i r 'T n R DE~J 7 T b 4m S 98D Tw n-—- v ODDSIST T | - 05129 D7-3?~f/ N-CHANNEL POWER MOSFETS IRF420/421 /422/423 FEA TU R ES Low Ros on at high voltage Improved inductive ruggedness. Excellent high voltage stability
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IRF420/421
IRF420
IRF421
IRF422
IRF423
00GS435
F--13
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IRFP250
Abstract: 1RFP250 IRFP253 RIKC IRFP251 IRFP252 irfp250 mosfet samsung MOSFET
Text: 7 9 6 4 142 SAMSUNG SEMICONDUCTOR I NC ]>e "| T T b M m S DGDSlflM b | - N-CHANNEL POWER M OSFETS IRFP250/251Z252/253 FEATURES • Low RDS on N • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Low input capacitance
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IRFP250/251/252/253
IRFP250
RFP251
IRFP252
IRFP253
IRFP251
71t414ri
1RFP250
RIKC
irfp250 mosfet
samsung MOSFET
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Mosfet K 135 To3
Abstract: 431z
Text: 7964142 tM C M iM fî c c ü r r 'A M n n r 'T n c :n c 98D DE | ? citi414E 00DS1B4 S 0 5134 D N-CHANNEL POWER MOSFETS IRF430/431/432/433 FEATURES • • • • • • • • • Low RDS on at high voltage ' Improved inductive ruggedness Excellent high voltage stability
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iti414E
00DS1B4
IRF430/431/432/433
IRF330
IRF331
IRF332
IRF333
00GS435
Mosfet K 135 To3
431z
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IRF44
Abstract: IRF440
Text: ; 7964142 DE I T T b m M E SAMSUNG S E M I C O N D U C TOR □ □ □ 5 1 3 e] 1 I 98D IN C ^ D T S f -t3 05139 N-CHANNEL POWER MOSFETS IRF440/441/442/443 FEATURES • • • • • • • • • Low RDS on at high voltage Improved inductive ruggedness
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IRF440/441/442/443
IRF440
IRF441
IRF442
IRF443
00GS435
F--13
IRF44
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IRF250
Abstract: F25-3
Text: 7964142 Tñ S AM S U N G DE | ? c] t . 4 1 4 5 S E M I CONDUCTOR DDDS1DM 4 INC 9 8D 0 51 0 4 0 T “ 3 7- N-CHANNEL POWER MOSFETS I IRF250/251 /252/253 FEA TU R E S Low RoS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure
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IRF250/251
IRF251
200V150V
00GS435
F--13
IRF250
F25-3
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irfp321
Abstract: IRFP320 IRFP323 IRFP322 mosfet p.321 samsung tv
Text: "OT^JT-" 7964 142 SAMSUNG SEMI CONDUCTOR. .INC 98D 05189 D e | TlbMlMS DOOSlflT S I N-CHANNEL POWER MOSFETS •' IRFP320/321/322/323 FEATURES • LowRDS{on • • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure
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IRFP320/321/322/323
IRFP320
IRFP321
IRFP322
IRFP323
00GS435
irfp321
mosfet p.321
samsung tv
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IRF150
Abstract: IRF150 MOSFET IRF150 To3 package IRF-150 IRF150 on semi
Text: 7964142 SAMSUNG SEMICONDUCTOR Tfl D e J 7Tti414E DD0SDÛ4 a f 98 D 0 5084 INC L' D T -SVIli N-CHANNEL POWER MOSFETS IRF150/151/152/153 FEATURES Low RDS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Low input capacitance
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7Tti414E
IRF150/151/152/153
IRF150
IRF151
IRF152
IRF153
00GS435
IRF150 MOSFET
IRF150 To3 package
IRF-150
IRF150 on semi
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IRFP120
Abstract: IRFP121 IRFP122 IRFP123
Text: 7964142 SAMSUNG S E M IC O N D U C TO R .^ñ DE | 7 ^ 4 1 4 5 □ 00514=1 IN 98D 4 l i 05149 üT—S f '* ï N-CHANNEL POWER MOSFETS IRFPi 20/121/122/123 FEATURES • • • • • • • • Low RDS on Improved inductive ruggedness Fast switching times
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IRFP120
IRFP121
IRFP122
IRFP123
00GS435
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IRF9640 irf9240
Abstract: irfp 9640 IRF9640 semiconductor IRF 9640 9243 f9640 IRF9642 FP9240 irfp9240
Text: D 98D 05420 _7964142 S A MS UN G SE MIC O N D U C T OR INC_ IRF9240/9241/9242/9243?-^l ^b4ji4d uuuò4du . f "V * ir m ii V k L ~ ’ IRFP9240/9241/9242/9243 POWER MOSFETS IRF9640/9641 /9642/9643 Tfl Preliminary Specifications D E | 7 cì b 4 1 , 4 2 000S4S0
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IRF9240/9241/9242/9243
IRFP9240/9241/9242/9243
IRF9640/9641
FP9240,
F9640
F/IRFP9241,
IRF9641
IRF/IRFP9242,
F9642
IRF/IRFP9243,
IRF9640 irf9240
irfp 9640
IRF9640
semiconductor IRF 9640
9243
IRF9642
FP9240
irfp9240
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irf9220
Abstract: IRF 9220 IRFP9220 IRFP9222 specification of mosfet irf IRFP9223 IRF9221 9223
Text: 7 T ti 4 m E DUUÌ4 Jj 4 ü IRF9220/9221/9222/9223 IRFP9220/9221/9222/9223 1RF9620/9621/9622/9623 Preliminary Specification SAMSUNG S POWER MOSFETS SEMIC ONDUCTOR INC ^fl rn u u u b i - 2 0 0 Volt, 1.5 Ohm SFET DE | T T b m M E o u iv n v iM n i RoS on •d
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PDF
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IRF9220/9221/9222/9223
IRFP9220/9221/9222/9223
1RF9620/9621/9622/9623
IRF/IRFP9220,
IRF9620
RF/IRFP9221,
IRF9621
IRF/IRFP9222,
IRF9622
IRF/IRFP9223,
irf9220
IRF 9220
IRFP9220
IRFP9222
specification of mosfet irf
IRFP9223
IRF9221
9223
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Untitled
Abstract: No abstract text available
Text: 7 9 6 4 1 4 2 SAM SUNG hfl S E M ICO N D U CTO R 9 8 D I N C _ DE I TTtiMlMS □□□SDflcl 1 050 8 9 d T -J ? N-CHANNEL POWER MOSFETS IRF220/221/222/223 FEA TU R ES • Low R d S o ii • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure
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IRF220/221/222/223
IRF220
IRF221
IRF222
IRF223
00GS435
F--13
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IRF350
Abstract: No abstract text available
Text: - Tfl ‘_7 9 6 4 1 4 2 SAMSUNG SEMICONDUCTOR IN C 98D DE § 7 ^ ^ 4 1 4 2 □□DS1S4 0 05124 ~ D N-CHANNEL POWER MOSFETS IRF350/351/352/353 FEATURES • LOW RoS on • • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure
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IRF350/351/352/353
IRF251
IRF252
IRF253
00GS435
IRF350
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LTI 222 diode
Abstract: IRF450 mosfet IRF450 irf4 IRF452 IRF451
Text: 7964142 SA MSU NG S E M ICONDU CTOR INC bMlMS ODDS 14M S | 98D 05 144 D 7^3?-/3 N-CHANNEL ' POWER MOSFETS IRF450/451/452/453 FEATURES Low RDS on at high voltage Improved inductive ruggedness Excellent high voltage stability Fast switching times Rugged polysilicon gate cell structure
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IRF450/451/452/453
IRF250
IRF251
IRF252
IRF253
00GS435
LTI 222 diode
IRF450
mosfet IRF450
irf4
IRF452
IRF451
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1RF242
Abstract: mosfet IRF240 DIODE M4A irf240 IRF242 1rf240
Text: \ 7964.14 2 „ S A M S U N G S E M I C O N D U C T O R Tfl DE 17Tbm4S DDOSCm 4 | - — IRF240/241/242/243 IN C 98 D 0 5 0 9 9 D N-CHANNEL POWER MOSFETS FEATURES • • • • « • • • Low RDS on Improved inductive ruggedness Fast switching times
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PDF
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17Tbm4S
IRF240/241/242/243
IRF240
IRF241
IRF242
IRF243
00GS435
1RF242
mosfet IRF240
DIODE M4A
1rf240
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IRF143
Abstract: IRF141 IRF142 IRF140 F140
Text: 7 96 4 1 4 2 .SAMS U N G _ S EM IC O N D U C T O R 1 -' :V ñ DE § INC 98 D 0 5 0 7 9 □□OSD?^ T D r-3?-'3 N-CHANNEL POWER MOSFETS - IR F 1 40/141/142/143 FEA TU R ES LOW RDS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure
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PDF
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IRF141
00GS435
F--13
IRF143
IRF142
IRF140
F140
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ssm8n55
Abstract: SSM8N60
Text: •7964142 Tf l ' DE I 7Tbm4S SAMSUNG SEMICONDUCTOR □ □ 0 S 3 2 ci h -V 98D IN C 05329 _ D ' _ : . ' 7 - - J 7 - / 3 -• N-CHANNEL POWER MOSFETS SSM8N55/8N60 FEATURES • • • • • .• • • • Low Ros<on at high voltage
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SSM8N55/8N60
SSM8N55
SSM8N60
00GS435
SSM8N60
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