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    IRF4 Price and Stock

    Vishay Dale IRF46ER102K

    FIXED IND 1MH 200MA 8 OHM TH
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    DigiKey IRF46ER102K Bag 12,000 1
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    Infineon Technologies AG IRF40R207

    MOSFET N-CH 40V 56A TO252
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    DigiKey IRF40R207 Reel 10,000 2,000
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    IRF40R207 Cut Tape 860 1
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    Mouser Electronics IRF40R207 4,449
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    IRF40R207 1,985 83
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    Arrow Electronics IRF40R207 2,000 12 Weeks 2,000
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    IRF40R207 Cut Strips 18 12 Weeks 1
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    Newark IRF40R207 Cut Tape 752 5
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    TME IRF40R207 1
    • 1 $0.772
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    EBV Elektronik IRF40R207 13 Weeks 2,000
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    Vishay Dale IRF46ER332K

    FIXED IND 3.3MH 105MA 22 OHM TH
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    DigiKey IRF46ER332K Bag 5,958 1
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    Infineon Technologies AG IRF4905LPBF

    MOSFET P-CH 55V 42A TO262
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    DigiKey IRF4905LPBF Tube 4,648 1
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    Mouser Electronics IRF4905LPBF 1,323
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    Arrow Electronics IRF4905LPBF 485 18 Weeks 1
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    IRF4905LPBF 403 18 Weeks 1
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    IRF4905LPBF 3 18 Weeks 1
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    Newark IRF4905LPBF Bulk 10,968 1
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    RS IRF4905LPBF Bulk 5
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    TME IRF4905LPBF 64 1
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    Rutronik IRF4905LPBF Tube 900 50
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    CoreStaff Co Ltd IRF4905LPBF 730
    • 1 $1.65
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    EBV Elektronik IRF4905LPBF 11 Weeks 1,000
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    Rochester Electronics LLC IRF40DM229

    IRF40 - 12V-300V N-CHANNEL POWER
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    DigiKey IRF40DM229 Bulk 4,194 249
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    Find more IRF4 price and stock on Findchips.com

    IRF4 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRF400 Nikkohm 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED Original PDF
    IRF4000 International Rectifier IEEE 802.3af Compliant PoE Switch in Power Sourcing Equipment Original PDF
    IRF4000TR International Rectifier Original PDF
    IRF4000TR International Rectifier 100V Quad N-Channel HEXFET Power MOSFET in a Power MLP package Original PDF
    IRF40B207 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 95A TO-220AB Original PDF
    IRF40DM229 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 159A ISOMETRICMF Original PDF
    IRF40H210 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A PQFN5X6 Original PDF
    IRF40H233XTMA1 Infineon Technologies TRENCH <= 40V Original PDF
    IRF40N03 Magic Tech N-CHANNEL Power MOSFET Original PDF
    IRF40R207 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 56A DPAK Original PDF
    IRF40SC240ARMA1 Infineon Technologies MOSFET N-CH 40V 360A TO263-7 Original PDF
    IRF4104 International Rectifier 40V Single N-Channel Automotive HEXFET Power MOSFET in a TO-220AB package Original PDF
    IRF4104 International Rectifier 40V Single N-Channel Automotive HEXFET Power MOSFET in a TO-220AB package Original PDF
    IRF4104 International Rectifier 40V Single N-Channel Automotive HEXFET Power MOSFET in a TO-220AB package; A IRF4104 with Standard Packaging Original PDF
    IRF4104GPBF International Rectifier FETs - Single, Discrete Semiconductor Products, MOSFET N CH 40V 75A TO220AB Original PDF
    IRF4104L International Rectifier 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package Original PDF
    IRF4104L International Rectifier 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF4104L with Standard Packaging Original PDF
    IRF4104L International Rectifier 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package Original PDF
    IRF4104LPBF International Rectifier Original PDF
    IRF4104LPBF International Rectifier 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF4104L with Lead Free Packaging Original PDF
    ...

    IRF4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF4905

    Abstract: IRF4905 equivalent transistor irf4905 IRF4905 P-channel power irf 930 1280c
    Text: PD - 9.1280C IRF4905 HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS on = 0.02Ω G ID = -74A


    Original     		PDF 1280C IRF4905 O-220 IRF4905 IRF4905 equivalent transistor irf4905 IRF4905 P-channel power irf 930 1280c

    IRF4905

    Abstract: IRF4905L IRF4905S
    Text: PD - 9.1478A IRF4905S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF4905S l Low-profile through-hole (IRF4905L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS(on) = 0.02Ω


    Original     		PDF IRF4905S/L IRF4905S) IRF4905L) IRF4905 IRF4905L IRF4905S

    IRF4401

    Abstract: IRF440 IRF44
    Text: PD - 90372A IRF440 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF440 500V 0.85Ω ID 8.0A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF 0372A IRF440 O-204AA/AE) --TO-204AA IRF4401 IRF440 IRF44

    RIA 250

    Abstract: IRF40N03 04WDV S600C
    Text: IRF40N03 ! N-CHANNEL Power MOSFET APPLICATION FEATURES ‹Fast Switching ‹ Low ON Resistance ‹Simple Drive Requirement ‹ Low Gate Charge ‹Low Gate Charge ‹ Peak Current vs Pulse Width Curve ‹ Inductive Switching Curves VDSS RDS ON Max. 30V .17.0mȍ


    Original     		PDF IRF40N03 O-220 RIA 250 IRF40N03 04WDV S600C

    Untitled

    Abstract: No abstract text available
    Text: , LJnc. TELEPHONE: 973 376-2922 (212) 227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: (973) 376-8960 IRF430 4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET Features • 4.5A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    Original     		PDF IRF430

    TA17415

    Abstract: IRF430 TB334
    Text: IRF430 Data Sheet March 1999 4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET • 4.5A, 500V Formerly developmental type TA17415. Ordering Information IRF430 • rDS ON = 1.500Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds


    Original     		PDF IRF430 TA17415. TB334 O-204AA TA17415 IRF430 TB334

    irf460

    Abstract: TL 2223
    Text: IRF460 TO–3 TO–204AA Package Outline. Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52)


    Original     		PDF IRF460 204AA) irf460 TL 2223

    IRF4905S

    Abstract: IRF4905 IRF4905 P-channel power IRF4905S/L IRF4905L
    Text: PD - 9.1478A IRF4905S/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF4905S l Low-profile through-hole (IRF4905L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -55V RDS(on) = 0.02Ω


    Original     		PDF IRF4905S/L IRF4905S) IRF4905L) IRF4905S IRF4905 IRF4905 P-channel power IRF4905S/L IRF4905L

    Untitled

    Abstract: No abstract text available
    Text: PD - 90372A IRF440 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF440 500V 0.85Ω ID 8.0A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF 0372A IRF440 O-204AA/AE) O-204AA

    irf460

    Abstract: No abstract text available
    Text: PD-90467A IRF460 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF460 500V 0.27Ω ID 21A The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    Original     		PDF PD-90467A IRF460 O-204AA/AE) O-204AE irf460

    Untitled

    Abstract: No abstract text available
    Text: IRF452 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)11 I(DM) Max. (A) Pulsed I(D)7.2 @Temp (øC)100 IDM Max (@25øC Amb)44 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)-55õ


    Original     		PDF IRF452

    Untitled

    Abstract: No abstract text available
    Text: IRF451R Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)450 V(BR)GSS (V)20 I(D) Max. (A)13 I(DM) Max. (A) Pulsed I(D)8.1 @Temp (øC)100 IDM Max (@25øC Amb)52 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)-55õ


    Original     		PDF IRF451R

    TO-254

    Abstract: T0-204 IRF450 equivalent
    Text: CT'Sificonix .X J P in c o r p o r a te d Industry Standard Military MOSFETs Package Equivalent Commercial Part Number 0.18 75 T0-204 IRF130 542 9.0 0.40 75 T0-204 IRF230 542 400 5.5 1.0 75 TO-204 IRF330 542 500 4.5 1.5 75 TO-204 IRF430 542 Part Number V BRJDSS


    OCR Scan     		PDF 2N6756 2N6758 2N6760 2N6762 2N6764 2N6766 2N6768 2N6770 2N6788 2N6790 TO-254 T0-204 IRF450 equivalent

    Untitled

    Abstract: No abstract text available
    Text: mi = ^ = llll IRF450 SEME LAB MECHANICAL DATA D im ensions in m m inches N-CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40(1.197) 30.15(1.187) 17.15 (0.675)_ 16.64 (0.655) 500V V DSS ^D(cont) _ * 0 ? (0.161) 3.84 (0 .Ï5 Ï) dia. 2 pics. -JL o o a ; 2- •—


    OCR Scan     		PDF IRF450 300ms,

    9323h

    Abstract: IRF420 IRF422 IRF421 g149
    Text: HE 0 I MäSSMSa O G C n ib b "1 I Data Sheet No. PD-9.323H INTERNATIONAL R E C T I F I E R V - INTERNATIONAL. RECTIFIER ? ? -// IO R REPETITIVE AVALANCHE AND dv/dt RATED' H E X F E T IRF420 IRF421 IRF422 IRF4S3 T R A N S IS T O R S :n N-CHANNEL 500 Volt, 3.0 Ohm HEXFET


    OCR Scan     		PDF IRF420 IRF421 IRF422 T0-204AA G-149 IRF420, IRF421, IRF422, IRF423 G-150 9323h g149

    irf8408

    Abstract: IRF440 irf4404 7n50 RF840 IRF840 MTM7N45 MTM7N50 Application of irf840 IRF441
    Text: m a a FAIRCHILD c 'i i_ r- i —n - A4 SEMICONDUCTOR DE 1 3 4 t . T t . 7 4 0027^25 IRF440-443/IRF840-843 M TM7N45/7N50 N-Channel Power MOSFETs, 8 A, 450 V /50 0 V F A IR C H IL D A Schlumberger Company Power And Discrete Division _ -Description


    OCR Scan     		PDF IRF440-443/IRF840-843 MTM7N45/7N50 T-39-11 IRF440 IRF441 IRF442 IRF443 MTM7N45 MTM7N50 O-220AB irf8408 IRF440 irf4404 7n50 RF840 IRF840 MTM7N45 MTM7N50 Application of irf840 IRF441

    IRF449

    Abstract: irf362 irf413 IRF352 IRF353 IRF360 IRF421 IRF430 IRF433 IRF441
    Text: - 25 2 - Mi m *± « % Vds Vg s or * Vd g % 1RF35! IRF353 IR !R IR IRF360 IRF362 IRF420 IRF421 IRF422 IRF423 IRF430 IRF431 IRF432 IRF433 IRF440 IRF441 IRF442 IRF443 IRF448 IRF449 IRF450 IRF451 IRF452 IRF453 IRF460 IRF462 IRF510 IR IR IR IR IR IR IR IR IR IR


    OCR Scan     		PDF Ta-25 IRF352 IRF353 IRF360 O-204AE IRF362 TQ-204AE IRF421 O-3150 O-204AA IRF449 irf362 irf413 IRF352 IRF353 IRF360 IRF421 IRF430 IRF433 IRF441

    MOSFET IRF460

    Abstract: IRF460 IRF462 MOSFET IRF460 flat package irf460 switching MOSFET 1rf460 1RF460 la1620 IRF46 AJZH
    Text: Preview Products File Number IRF460, IRF462 2277 Avalanche-Energy-Rated N-Channel Power MOSFETs 21 A and 19 A, 500 V rDS on = 0.27 O and 0.35 O N-CHANNEL ENHANCEMENT MODE □ Features: • Single pulse avalanche energy rated m SOA is pow er-dissipation lim ite d


    OCR Scan     		PDF IRF460, IRF462 92CS-4 IRF460 IRF462 MOSFET IRF460 MOSFET IRF460 flat package irf460 switching MOSFET 1rf460 1RF460 la1620 IRF46 AJZH

    IRF423

    Abstract: ir*420 SM 3117 circuit diagram IRF420 IRF421 IRF422
    Text: Standard Power MOSFETs IRF420, IRF421, IRF422, IRF423 File N u m b e r 1571 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 2.0A and 2.5A, 450V-500V rDs on = 3.0 O and 4.0 fi Features:


    OCR Scan     		PDF IRF420, IRF421, IRF422, IRF423 50V-500V IRF422 IRF423 IF422 ir*420 SM 3117 circuit diagram IRF420 IRF421

    L3103L

    Abstract: 0T1S IRF4905L
    Text: PD-9.1478A International 3BR Rectifier IRF4905S/L HEXFET Power MOSFET • • • • • • • A dvanced Process Technology S urface M ount IRF4905S Low -profile through-hole (IRF4905L) 175 °C O perating Tem perature Fast Switching P-Channel Fully Avalanche Rated


    OCR Scan     		PDF IRF4905S) IRF4905L) IRF4905S/L L3103L 0T1S IRF4905L

    Mosfet K 135 To3

    Abstract: IRF430 432Z til 431 IRF330 IRF331 IRF332 IRF333 IRF431 IRF432
    Text: 7 9 6 4 1 4 2 5 / M C M iM fî c c ü r r ' A M n n r ' T n -ñfl DE | ? ci t i 4 1 4E 0 0 D S 1 B 4 S c 98D ;N e 0 5134 D T ^ J f- N-CHANNEL POWER MOSFETS IRF430/431/432/433 FEATURES • • • • • • • • • Low RDS on at high voltage ' Improved inductive ruggedness


    OCR Scan     		PDF cib414E 00DS1B4 IRF430/431/432/433 IRF330 IRF331 IRF332 IRF333 98D05134 IRF430 IRF431 Mosfet K 135 To3 432Z til 431 IRF432

    Untitled

    Abstract: No abstract text available
    Text: • 4305271 0053^3 3Ì HARRIS TTE ■ HAS IR F430/431/432/433 IRF430R/431R/432R/433R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T O -2 0 4 A A • 4.0A and 4.5A, 450V - 500V • rDS on = 1 -5 il and 2 .0 0 • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF F430/431/432/433 IRF430R/431R/432R/433R IRF430, IRF431, IRF432, IRF433 IRF430R, IRF431R, IRF432R IRF433R

    IRF450 transistor

    Abstract: irf450 mosfet 452 IRF452 mosfet IRF450
    Text: MOTOROLA SEMICONDUCTOR IRF450 IRF451 IRF452 TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Part Number V d SS rDS on >D IRF450 500 V 0.4 n 13 A IRF451 450 V 0.4 n 13 A IRF452 500 V 0.5 n 12 A T h e s e T M O S P o w e r FETs are d es igne d fo r high v o ltag e, high


    OCR Scan     		PDF IRF450 IRF451 IRF452 IRF452 IRF451. IRF450, IRF450 transistor mosfet 452 mosfet IRF450

    irf460

    Abstract: IRF462 IRF460C MOSFET IRF460 F462
    Text: IRF460 IRF462 HARRIS N-Channel Power MOSFETs Avalanche-Energy Rated August 1991 Package Features T 0 -2 0 4 A E • 21A and 19A, 500V • rD S °n = BO TTO M V IE W and 0 .3 5 ÎÎ • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited


    OCR Scan     		PDF IRF460 IRF462 IRF462 IRF460, IRF460C MOSFET IRF460 F462