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    s00b

    Abstract: PQZ1
    Text: PHILIPS INTERNATIONAL bSE D • 711002b 0 0 b m 2 b 075 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF 711002b BUK456-800A/B BUK456 -800A -80QB -T0220AB 711062b 00b4130 s00b PQZ1

    BUK456

    Abstract: BUK456-800A BUK456-800B
    Text: PHILIPS INTERNATIONAL bSE D • 711002b 0 0 b m 2 b 075 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF 7110fl2b BUK456-800A/B -T0220AB BUK456 -800A -800B 711062b DQb4130 BUK456-800A BUK456-800B