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    0043 Search Results

    0043 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    M3004316035NX0ITBY Renesas Electronics Corporation Non-Volatile 4Mb MRAM, Parallel Interface, 35ns and 45ns Visit Renesas Electronics Corporation
    M3004316045NX0ITBY Renesas Electronics Corporation Non-Volatile 4Mb MRAM, Parallel Interface, 35ns and 45ns Visit Renesas Electronics Corporation
    M3004316035NX0PBCY Renesas Electronics Corporation Non-Volatile 4Mb MRAM, Parallel Interface, 35ns and 45ns Visit Renesas Electronics Corporation
    M3004316035NX0PTBR Renesas Electronics Corporation Non-Volatile 4Mb MRAM, Parallel Interface, 35ns and 45ns Visit Renesas Electronics Corporation
    M3004316045NX0PBCY Renesas Electronics Corporation Non-Volatile 4Mb MRAM, Parallel Interface, 35ns and 45ns Visit Renesas Electronics Corporation
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    0043 Price and Stock

    McGill Microwave Systems Ltd RG400-4.3/10M-BM(QTY:6M)

    RG400 Assy 4.3/10M -BNC Male 6m
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RG400-4.3/10M-BM(QTY:6M) 10,000 1
    • 1 $93.12
    • 10 $88.883
    • 100 $84.65
    • 1000 $84.65
    • 10000 $84.65
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    McGill Microwave Systems Ltd RG400-4.3/10M-NF(QTY:7M)

    RG400 Assy 4.3/10M-N FEMALE 7m
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RG400-4.3/10M-NF(QTY:7M) 10,000 1
    • 1 $100.91
    • 10 $96.327
    • 100 $91.74
    • 1000 $91.74
    • 10000 $91.74
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    McGill Microwave Systems Ltd RG400-4.3/10M-SM(QTY:5M)

    RG400 Assy 4.3/10M-SMA MALE 5m
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RG400-4.3/10M-SM(QTY:5M) 10,000 1
    • 1 $85.32
    • 10 $81.438
    • 100 $77.56
    • 1000 $77.56
    • 10000 $77.56
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    McGill Microwave Systems Ltd RG400-4.3/10M-SM(QTY:90M)

    RG400 Assy 4.3/10M-SMA MALE 90m
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RG400-4.3/10M-SM(QTY:90M) 10,000 1
    • 1 $748.23
    • 10 $714.221
    • 100 $680.21
    • 1000 $680.21
    • 10000 $680.21
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    McGill Microwave Systems Ltd RG400-4.3/10M-UM(QTY:10M)

    RG400 Assy 4.3/10M-UHF MALE 10m
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RG400-4.3/10M-UM(QTY:10M) 10,000 1
    • 1 $124.31
    • 10 $118.661
    • 100 $113.01
    • 1000 $113.01
    • 10000 $113.01
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    Find more 0043 price and stock on Findchips.com

    0043 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    00430450820 Molex Cconnector HEADER SMD 8POS 3MM Original PDF
    004306-000 Tyco Electronics Pre-Marked Wire & Cable Markers; 06153922-PREV ( Tyco Electronics ) Original PDF
    00436.63.17 General Cable Power, Line Cables, Cable Assemblies, 6' 14/3 SPT-3 AC BEIGE Original PDF
    00439.63.17 General Cable Power, Line Cables, Cable Assemblies, 9' 14/3 SPT-3 AC BEIGE Original PDF

    0043 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: AHU u m川 i T - C E J R υ n P UNH nLU AA E L HHい ハHV R T ALTERATION 1 S S U E I l i CAPACITANCE ITEM CODE ￨ F * i ECWH 123620 VC 1 0， 0036 (362) i If 123920 VC 1 0， 0039 (392) I f 124320 VC 0 0043 (432) H 1 2 4 7 2 0 VC I 0.0047 (472) 7 1 2 5 1 2 0 V C 1 0.0051 (512)


    Original     		PDF 127520VC

    Untitled

    Abstract: No abstract text available
    Text: Datasheet for part number MKJ4A1F6-7S Our Catalog Part Number: MKJ4A1F6-7S Our Global Manufacturing Part Number: 155281-0043 Brand: Cannon Product Category: Circular Product Line: Trinity MKJ Series: MKJ4 Product Datasheet Series Class Shell Style Shell Size


    Original     		PDF MIL-STD-1344

    Untitled

    Abstract: No abstract text available
    Text: BDT65F; BDT65AF BDT65BF; BDT65CF PHILIPS INTERNATIONAL SbE 7110flSb 00435^0 4Sci M P H I N T ~ 33 SILICON DARLINGTON POWER TRANSISTORS N PN silicon darlington power transistors in a S O T 1 8 6 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.


    OCR Scan     		PDF BDT65F; BDT65AF BDT65BF; BDT65CF 7110flSb BDT65F

    2SC1553

    Abstract: 2SC1553A 2sc15 scjti SC1553 nf1sd S211
    Text: TOSHIBA BT OISCRETE/OPTOJ D E ~ | ‘iD Î T E S 0 D 0 G 0 4 B 1 9 0 9 7 2 5 0 T O S H I B A D I S C R E T E /O P T O 39C 00431 _ •_ T - O U H F Band L o v N o i a e A m p l i f i e r A p p l i c a t i o n s


    OCR Scan     		PDF 500MHi 2SC1553A 2SG1553 500MHi) 15GHi 2SC1553 2S01553. 2S01553AÂ 2sc1553, 2sc15 scjti SC1553 nf1sd S211

    P112

    Abstract: TIP111 darlington npn tip 102 TIP110 TIP112 TIP115 TIP116
    Text: TIP110 TIP111 TIP112 PHILIPS INTERNATIONAL SbE D • 711002b 0043550 224 ■ PHIN T -3 3 -Z SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in m onolithic Darlington circu it fo r audio o u tp u t stages and general purpose am plifier and switching applications. T 0-220A B plastic envelope. P-N-P complements are


    OCR Scan     		PDF TIP110 TIP111 711002b T-33-Z T0-220AB TIP115, TIP116 TIP111 TIP112 P112 darlington npn tip 102 TIP112 TIP115

    b0948

    Abstract: b0946 BD944 philips b0944 m lc 945 bd946 BD944 T 948 BD943 BD948
    Text: BD944 BD946 BD948 PHILIPS IN TE RN AT IO NAL 5bE ]> • 711DûSb 00430ÔM SILICON EPITAXIAL BASE POWER TRANSISTORS 0 T2 ■ I P H I N T *33 ~ P-IM-P silicon transistors in a plastic envelope intended fo r use in audio ou tput stages and general purpose amplifiers. N-P-N complements are BD943; 945 and 947.


    OCR Scan     		PDF bd944 bd946 bd948 711002b BD943; BD948. b0948 b0946 BD944 philips b0944 m lc 945 T 948 BD943 BD948

    bd947

    Abstract: b0945 BD945 m lc 945 BD943 BD944
    Text: BD943 BD945 BD947 H ILIPS INTERNATIONAL _ SbE J> H 711002b 0043070 SOfl • PHIN SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifier applications. P-N-P complements are BD944; 946 and 948.


    OCR Scan     		PDF BD943 BD945 BD947 7110fllT\ 043070T[ BD944; T-33-17 BD945 bd947 b0945 m lc 945 BD944

    TOP 948

    Abstract: S944 BDS948 m lc 945 f 948 BDS944 BDS946 USB002 c 948 W468
    Text: PHILIPS IN TE RNATIONAL SbE Product specification date of issue April 1991 • 711002b 00431ÛG 33fi « P H I N 33-/7 BDS944/946/948 Data sheet status D T- PNP silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 PIN 1 2 3 4 PNP silicon epitaxial base transistors


    OCR Scan     		PDF 711002b BDS944/946/948 T-33-/7 OT223) BDS943/945/947. OT223 BDS944 BDS946 BDS948 TOP 948 S944 m lc 945 f 948 USB002 c 948 W468

    V7-1C17D8-002

    Abstract: i8700 FO503
    Text: FO-50360-L CW-B1651 REV DOCUMENT 4 0043895 CHANGED MB H BY CHECK 22SEP08 BL R S T E E L ACTUATOR , 8 7 0 ± . 02 0 040 . 0 6 0MAX — , PRETRAVEL . 32 c r r r - _ I r . 6 0 0 ± . 02 0 OPERATING POS I T I O N . 4 06±. 003 . 25 i . I I 4 ± . 002 4 ± . 00 2 HOLE


    OCR Scan     		PDF FO-50360-L CW-B1651 22SEP08 060MAX 1C17D8-002 FORCE----160 V7-1C17D8-002 V7-1C17D8-002 i8700 FO503

    T3D DIODE

    Abstract: T3D 77 T3D 65 diode Diode T3D 54 T3D 54 DIODE T3D 77 diode T3D 01 DIODE Diode T3D 57 BDT65 BDT64C
    Text: BDT65; 65A BDT65B; 65C V PHILIPS INTERNATIONAL SLE ]> • 71ÌG02L 00432^0 Ibfl M P H I N SILICON DARLINGTON POWER TRANSISTORS N P N e p itax ial base transistors in m o n o lith ic D arlin g to n c irc u it fo r au d io o u tp u t stages and general purpose a m p lifie r and sw itching ap plication s. T 0 - 2 2 0 pla stic envelope. P N P com p lem ents are


    OCR Scan     		PDF BDT65; BDT65B; T0-220 BDT64; BDT64A; BDT64B BDT64C. BDT65 7z82329 T3D DIODE T3D 77 T3D 65 diode Diode T3D 54 T3D 54 DIODE T3D 77 diode T3D 01 DIODE Diode T3D 57 BDT64C

    Untitled

    Abstract: No abstract text available
    Text: 0043592 A P I A P I ELECTRONICS INC 26C 00227 ELECTRONICS INC 2b D «7*^ 1 D eT| □□43512 0000SS7 1 | COLLECTOR CURRENT = 5 AMPS PNP TYPES - CONTINUED Device No AP1043 AP1044 AP1045 AP1046 AP1056 AP1057 AP1058. AP1059 AP1088 AP1102 AP1103 AP1121 AP1135


    OCR Scan     		PDF 0000SS7 AP1043 AP1044 AP1045 AP1046 AP1056 AP1057 AP1058. AP1059 AP1088

    Untitled

    Abstract: No abstract text available
    Text: 0043592 A P I ELECTRONICS INC A P I 26C 00234 ELECTRONICS INC 2b D » F | d D4 3 S c12 D 00 0 2 3 4 b COLLECTOR CURRENT = 15 AMPS NPN TYPES - CONTINUED Device No C ase 2N6496 2N6579 2N6580 2N6581 2N6582 2N6583 2N6584 2N6585 TO-3 T O -3 TO-3 TO-3 TO-3 TO-3


    OCR Scan     		PDF 2N6496 2N6579 2N6580 2N6581 2N6582 2N6583 2N6584 2N6585 O61/1

    Untitled

    Abstract: No abstract text available
    Text: REV A REVISIONS DESCRIPTION REDRAWN DATE APPROVED 10-21-88 DAC/S.I. M.Y. BB 5 -2 3 -9 0 011 REDRAWN IN CAD 01 2 VSWR: N/A WAS 335. RF LEAKAGE: 90 WAS 012. CONT.RESIS., CTR & OUTER 4.0 WAS 2.0. FORCE CKM 10-30-90 KCM TO ENGAGE: 2 WAS 7, ECN 90-0701 02 o MAJOR CHANGE PER ECN 92-0043-2 AND UPDATED


    OCR Scan     		PDF MIL-STD-202, CIS-50

    2N2991

    Abstract: 2N2992 2N2993 2N2994 2N3665 2N3766 2N3767 2N3917 2N3918 2N4000
    Text: 0043592 A P I ELECTRONICS A P I ELECTRONICS INC 26C 00 2 1 8 I NC lit . DE I OOMBS^a ODODaia ñ COLLECTOR CURRENT = 2 AMPS NPN TYPES - CONTINUED Device No 2N2991 Case T O -5 STUD T O -5 STUD T O -5 STUD TO -5 STUD T O -5 T O -5 T O -66 T O -66 T O -3 TO -3


    OCR Scan     		PDF 2N2991 2N2992 2N2993 2N2994 2N3665 -2n3666 2N3766 2N5680 2N6211 2N6212 2N3767 2N3917 2N3918 2N4000

    2N4398

    Abstract: 2N4399 2N6329 2N6330 2N6331 AP1020 AP1021 AP1048 AP1049 AP1050
    Text: 0043592 A P I A P I ELECTRONICS ELECTRONICS INC INC D yZ-SS-TX 26C 0 0 2 3 8 ' Sb DE | OOMBSTS 3 C O L L E C T O R C U R R E N T = 3 0 A M PS P N P T Y P E S D e v ic e No C a se 2N4398 2N4399 2N6329 2N 6330 2N6331 A P1020 A P1021 A P1048 A P 1049 A P1050


    OCR Scan     		PDF 2N4398 2N4399 2N6329 2N6330 2N6331 AP1020 AP1021 AP1048 AP1049 AP1124 AP1050

    Untitled

    Abstract: No abstract text available
    Text: TIP110 TIP111 TIP112 PHILIPS INTERNATIONAL SbE D • 711002b 0043550 224 H P H I N T -3 3 -Z SILICON DARLINGTON POWER TRANSISTORS N -P -N epitaxial-base transistors in m o n o lith ic D arlin g to n c irc u it fo r au dio o u tp u t stages and general purpose a m p lifie r and sw itching applications. T 0 -2 2 0 A B plastic envelope. P-N-P co m p lem ents are


    OCR Scan     		PDF TIP110 TIP111 TIP112 711002b TIP112_ 0D43S54 TIP111 TIP112 711005b

    diode t62

    Abstract: No abstract text available
    Text: BDT62;-62A BDT62B; 62C J PHILIPS INTERNATIONAL SbE ]> • 7110fl2b 0043S3Ö TÔ4 M P H I N T - 3 3 - 3 / SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m onolithic Darlington circuit for audio output stages and general am plifier and switching applications. T 0 -2 2 0 plastic envelope. N-P-N complements are B D T63,


    OCR Scan     		PDF BDT62 BDT62B; 7110fl2b 0043S3Ö BDT63C BDT62; 7110flat diode t62

    D 1991 AR

    Abstract: BD945
    Text: BD943 BD945 BD947 _ HILIPS INTERNATIONAL SbE ]> H 7110fl2ti 0043070 SOfl PHIN SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifier applications. P-N-P complements are BD944; 946 and 948.


    OCR Scan     		PDF BD943 BD945 BD947 7110fl2ti BD944; O-220. BD947 D 1991 AR

    BDT65

    Abstract: bdt65c bdt64
    Text: BDT64;- 64A BDT64B; 64C PHILIPS INTERNATIONAL SbE D • 711002b 0043274 T1S MPHIN T -1 3 '7 / SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications. T0-220 plastic envelope. NPN complements are BDT65,


    OCR Scan     		PDF BDT64 BDT64B; 711002b T0-220 BDT65, BDT65A, BDT65B BDT65C. 711D62b BDT65 bdt65c

    transistor 1BT

    Abstract: BDT62C PHILIPS npn 1bt BDT63B
    Text: BDT63; 63A BDT63B; 63C _ PHILIPS "INTERNATIONAL" StEB A • v _ 7110flEb 0043551, TTT - PHIN T - J J - Z 7 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general


    OCR Scan     		PDF BDT63; BDT63B; 7110flEb T0-220 BDT62, BDT62A; BDT62B BDT62C. BDT63 T-33-29 transistor 1BT BDT62C PHILIPS npn 1bt BDT63B

    1NTC11

    Abstract: D78238
    Text: • Í .LI27SE5 004317S 4 ^ NEC NEC Electronics Inc. B n ECE JUPD78238 Family pPD78233/234/237/238/P238 8-Bit, K-Serîes Microcontrollers With A/D and D/A Converters, Real-Time Output Ports June 1993 Description The ¿/PD78233, piPD78234, ¿JPD78237, ^PD78238, and


    OCR Scan     		PDF LI27SE5 004317S uPD78238 uPD78233 uPD78234 uPD78237 uPD78P238 /PD78233, piPD78234, 1NTC11 D78238

    946f

    Abstract: No abstract text available
    Text: BD944F;946F BD948F PHILIPS INTERNATIONAL SbE » • 7110fl2b 00430^5 17T ■ P H I N r - 7 ? - ' / cr SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BD943F, BD945Fand BD947F.


    OCR Scan     		PDF BD944F BD948F 7110fl2b OT186 BD943F, BD945Fand BD947F. BD946F BD948F 946f

    Untitled

    Abstract: No abstract text available
    Text: TIP32F; 32AF TIP32BF; 32CF TIP32DF PHILIPS INTERNATIONAL SbE D • 711002b 00434=10 210 M P H I N T -J 3 -I 7 SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors, each in a SO T186 envelope w ith an electrically insulated mounting base. They are intended fo r use in audio am plifier output stages, general purpose amplifiers, and high-speed


    OCR Scan     		PDF TIP32F; TIP32BF; TIP32DF 711002b T1P31BF,

    Untitled

    Abstract: No abstract text available
    Text: BDT60F; BDT60AF BDT60BF; BDT60CF _z PHILIPS INTERNATIONAL SbE D • 7110flSb 0043212 77fl ■ P H I N SILICON DARLINGTON POWER TRANSISTORS T~3 PNP silicon power transistors in a monolithic Darlington circuit and housed in a SOT186 envelope with an electrically insulated mounting base.


    OCR Scan     		PDF BDT60F; BDT60AF BDT60BF; BDT60CF 7110flSb OT186 BDT61F, BDT61AF, BDT61BF BDT61CF.