K 3654
Abstract: 2N3658
Text: 3DE D • 003133b ô ■ " T - 2 S - 1*7 / = T S G S -T H O M S O N ^ _Lg 7 # s ¥ M 0 gl 2 N 3654 2 N 3658 S G S-THOMSON FAST SWITCHING THYRISTORS ■ ■ ■ ■ GLASS PASSIVATED CHIP HIGH STABILITY AND RELIABILITY HIGH di/dtANDdv/dt RATINGS
|
OCR Scan
|
PDF
|
003133b
7C15CI537
T-25-17
K 3654
2N3658
|
DD313
Abstract: No abstract text available
Text: IRLW/I620A Advanced Power MOSFET FEATURES M • ■ ■ ■ ■ ■ ■ B V Dss = 2 0 0 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175* »Operating Temperature Lower Leakage Current : 10nA Max. @ VOS= 200V
|
OCR Scan
|
PDF
|
IRLW/I620A
100oC)
71b4142
003133b
DD313
|
e53793 connector
Abstract: E53793 ffc cable CSA-LR7189A-91 flat conductor cable
Text: AMP Catalog 8 2 00 7 Flexible Film P ro d u cts Revised 8-96 .050 [1.271 Centerline Contact Material and Finish: Receptacle Solder Tab Phosphor bronze; plated gold duplex or bright tin-lead overall See chart below. Receptacle Strip Type Receptacle Solder Tab
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors k b S 3 T 3 1 Q 031535 530 • A P X ^Pfoductspecification PNP 4 GHz wideband transistor BFQ32C N AUER PHILIPS/DISCRETE DESCRIPTION blE » PINNING PNP transistor in hermetically-sealed, sub-miniature, SOT173 and SOT 173X micro-stripline envelopes. It is
|
OCR Scan
|
PDF
|
BFQ32C
OT173
BFP96.
|
Untitled
Abstract: No abstract text available
Text: S^E » • 02 57 5 2 7 0D313D4 587 IAÎ1D3 ADV MICRO TELECOM P R E L IM IN A R Y A m 7 9 C 0 2 /3 (A ) Adva^ Dual Subscriber Line Audio-Processing Circuit (DSLAC Device) Devices DISTINCTIVE CHARACTERISTICS ■ Software programmable: -SLIC impedance -Trans-hybrid balance
|
OCR Scan
|
PDF
|
0D313D4
Am79C02/3A
096-MHz
PL028
PL032
CD040
PD040
PL044
|
counter lc48
Abstract: DZ 2101 AM79C02 AM79C03 T55B AF-2-A AXGX GD313
Text: S^E » • 02 57 5 2 7 0D313D4 587 IAÎ1D3 ADV MICRO TELECOM PRELIMINARY A m 7 9 C 0 2 /3 (A ) Adva^ Dual Subscriber Line Audio-Processing Circuit (DSLAC Device) Devices DISTINCTIVE CHARACTERISTICS ■ Software programmable: -SLIC impedance -Trans-hybrid balance
|
OCR Scan
|
PDF
|
0D313D4
Am79C02/3
Am79C02/3A
096-MHz
12-dB
PL032
CD040
PD040
06823D
PL044
counter lc48
DZ 2101
AM79C02
AM79C03
T55B
AF-2-A
AXGX
GD313
|
KM23C16101B
Abstract: DD313
Text: K M 2 3 C 16 1 O1 B CMO S Mas k ROM ELECTRONICS 16M-BÏÏ 2M X 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152 x 8 bit organization • Fast access time : 120ns(max.) • Supply voltage : single +5V • Current consumption Operating : 60 mA(max.)
|
OCR Scan
|
PDF
|
16M-BÏ
120ns
-KM23C16101B
36-DIP-600
KM23C16101B
152x8bit.
KM23C16101B
Jb4142
KM23C16101B)
DD313
|
Untitled
Abstract: No abstract text available
Text: ADE-203-084G Z HM62W256 Series 32,768-word x 8-bit Low Voltage Operation CMOS Static RAM Rev. 7.0 Jun. 1 9 ,1 9 9 5 HITACHI Features Ordering Information • Low voltage operation SRAM Operating Supply Voltage: 3.0 V to 3.6 V • 0.8 pm Hi-CMOS process • High speed
|
OCR Scan
|
PDF
|
ADE-203-084G
HM62W256
768-word
HM62W256LFP-5SLT
HM62W256LFP-7SLT
HM62W256LFP-8SLT
28-pin
FP-28DA)
HM62W256LFP-7ULT
HM62W256LT-7
|