Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bSE D • L.b53R31 002fllRfl S23 « A P X Objectivespecification Philips Semiconductors NPN general purpose transistor 2PC4081 FE A T U R E S • S-mini package • Low output capacitance, C 0b = 2 p F typ. . DESCRIPTION NPN transistor in a plastic three lead
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b53R31
002fllRfl
2PC4081
2PC4081Q
2PC4081R
2PC4081S
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transistor 2n3053
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'lE D bbSBTBl 002fll3b Eflb I IAPX 2N30b3 A SILICON PLANAR TRANSISTOR N-P-N transistor in a TO-39 metal envelope designed for medium speed, saturated and non-saturated switching applications for industrial service. QUICK REFERENCE DATA
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002fll3b
2N30b3
transistor 2n3053
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Untitled
Abstract: No abstract text available
Text: PD 9.1601 International IQR Rectifier IRG4BC20FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode .
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IRG4BC20FD
O-22QAB
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fll57
Abstract: No abstract text available
Text: Data Sheet October 1997 microelectronics group Lucent Technologies Bell Labs Innovations T7901 ISA Single Wide Area Connection ISA-SWAC Device Features • One wide area connection port that can be config ured as a basic rate ISDN TE or NT or as a syn
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T7901
SN74LS32)
SN74LS04)
T7901.
5002b
002fl25b
theT7901
CY7C199.
SN74LS174
fll57
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b5E D • bb53531 0DSfl452 171 I IAPX BUV26F BUV26AF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope w ith electrically isolated mounting base, intended fo r use in converters, inverters, switching regulators, m otor control
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bb53531
0DSfl452
BUV26F
BUV26AF
OT186
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'lE D • bbS3T31 QDEfilbE 37fl 2N 5086 2N 5 087 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P small-signal transistors in plastic TO-92 envelope intended for low-noise stages in audio equipment. Complementary types are 2N5088/2N5089.
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bbS3T31
2N5088/2N5089.
2N5086
2N5087
S3T31
002fllb4
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Untitled
Abstract: No abstract text available
Text: _ _ • TOSHIBA ^0^7240 DD2öb3S 315 T C 5 9 S 1 6 1 6 A F T -1 0 , -1 2 T C 5 9 S 1 6 0 8 A F T -1 0 , -12 T C 5 9 S 1 6 0 4 A F T -1 0 , -12 PRELIMINARY 524,288 WORDS X 2 BANK X 16 BITS 1,048,576 WORDS X 2 BANK X 8 BITS 2,097,152 WORDS X 2 BANK X 4 BITS SYNCHRONOUS DRAM
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TC59S1616AFT
288-words
x16-bits
TC59S1608AFT
576-words
andTC59S1604FT
100M-words
SD16010496
TC59S1616AFT,
TC59S1608AFT,
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Untitled
Abstract: No abstract text available
Text: P h ilip s S e m ic o n d u c to rs ^ bb53B31 0038177 STT H IA P X Preliminary specification Silicon planar epitaxial transistor 2N5680 N AUER PHILIPS/DISCRETE bBE D QUICK REFERENCE DATA PARAMETER SYMBOL collector current MIN. MAX. UNIT - V - 120 V - 1 A Tcase < 25 °C
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bb53B31
2N5680
bb53T31
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2PA733
Abstract: 2PC945 bt 824
Text: N AMER PHILIPS/DISCRETE bTE D • ^ 5 3 ^ 3 1 00201Ô5 T7S M A P X A Ü K U y4Ö SILICON SMALL-SIGNAL TRANSISTOR NPN small-signal tran sisto r, in a p la sticT O -9 2 envelope. I t is intended fo r use in audio a m p lifie r d rive r stages and lo w speed sw itching a pplications etc.
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plasticTO-92
2PA733.
2PA733
2PC945
bt 824
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U9024N
Abstract: BSS 250 IRFR P-Channel MOSFET
Text: P D - 9.1506 International IGR Rectifier PRELIMINARY 1RFR/U9024N HEXFET Power MOSFET Ultra Low On-Resistance P-Channel Surface Mount IRFR9024N Straight Lead (IRFU9024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Vdss = -55V RDS(on) = 0.175Í2
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IRFR9024N)
IRFU9024N)
1RFR/U9024N
4A5545E
002flL07
U9024N
BSS 250
IRFR P-Channel MOSFET
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e 13009 d
Abstract: transistor E 13009 transistor E 13009 l E 13009 2
Text: NPN SILICON TRANSISTOR KSE13008/13009 HIGH VOLTAGE SWITCH MODE APPLICATION TO -220 • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector Base Voltage : : C ollector Em itter Voltage:
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KSE13008/13009
KSE13008
KSE13009
e 13009 d
transistor E 13009
transistor E 13009 l
E 13009 2
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M 6M 80041P, FP 4 0 9 6 - B IT 256-W O R D B Y 16-B IT E LEC T R IC A LLY E R A S A B LE AND PROGRAM M ABLE ROM DESCRIPTION The M6M80041P, FP are 4096-bit (256-word x 16-bit) elec trically erasable CMOS EEPROM s, and all have a built-in
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80041P,
M6M80041P,
4096-bit
256-word
16-bit)
80041FP
QQ2A132
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TMP87CC70/H70/K70A/M70A CMOS 8 -BIT MICROCONTROLLER TMP87CC70F, TMP87CH70F, TMP87CK70AF, TMP87CM70AF The 87CC70/H70/K70A/M70A are the high speed and high perform ance 8 -bit single chip microcomputers. These MCU contain 6 -bit A/D conversion inputs and a VFT Vacuum Fluorescent Tube driver on a chip.
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TMP87CC70/H70/K70A/M70A
TMP87CC70F,
TMP87CH70F,
TMP87CK70AF,
TMP87CM70AF
87CC70/H70/K70A/M70A
TMP87CC70F
TMP87CH70F
TMP87CK70AF
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IC TA 31101
Abstract: 87CH70
Text: TOSHIBA TMP87PM70 CMOS 8-BIT MICROCONTROLLER TMP87PM70F The 87 P M 70 is a O n e-T im e PROM m icroco ntroller w ith lo w -p o w e r 256K bits 32K bytes electrically program m able read only m emory f o r th e 87CC70/CH70/CK70A/CM70A system evaluation. The 87PM 70 is pin
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TMP87PM70
TMP87PM70F
87CC70/CH70/CK70A/CM70A
IC TA 31101
87CH70
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL POWER MOSFETS IRFZ34/30 FEATURES • Lower R d s On • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high tem perature reliability
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IRFZ34/30
IRFZ34
IRFZ30
002fllÃ
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