FCR16
Abstract: No abstract text available
Text: Vdd 16,17,62,98,99 8,9,12,14,64,96 M30302MEP-002FP XIN 15 XOUT 13 FCR16.0M2G 1 2 V1H/V1L V2H/V2L CL1 CL2 5pF 5pF Oscillating circuit for evaluation
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M30302MEP-002FP
FCR16
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Untitled
Abstract: No abstract text available
Text: NOTES: 1. MATERIALS AND FINISHES: BODY - BERYLLIUM COPPER, GOLD PLATING .000050 MIN THICK OVER SULFAMATE COUPLING NUT - STAINLESS STEEL, PASSIVATED 2. ELECTRICAL: A. IMPEDANCE: 50 OHM B. FREQUENCY RANGE: DC - 18 GHz C. VSWR(RETURN LOSS): 1.003 + .002f (GHz) MAX.
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19-OCT-75
120mm
19-AUG-08
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591-3501-002F
Abstract: No abstract text available
Text: Mouser Electronics Related Product Links 645-591-3501-002F - Dialight 591-3501-002F
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645-591-3501-002F
591-3501-002F
591-3501-002F
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Untitled
Abstract: No abstract text available
Text: Vdd 16,17,62,98,99 8,9,12,14,64,96 M30302MEP-002FP XIN 15 1 XOUT 13 FCR6.0MC5 V1H/V1L 3 V2H/V2L CL1 CL2 2 *BUILT-IN LOADING CAPACITOR CL1/CL2=30/30pF +/-20% Oscillating circuit for evaluation
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M30302MEP-002FP
30/30pF
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Untitled
Abstract: No abstract text available
Text: APC-7 Coaxial Connectors Specifications ELECTRICAL ENVIRONMENTAL Test Requirement Impedance 50 ohms Frequency range 0-18 GHz VSWR Connectors on airline 1.003 + .002f GHz Insertion loss (in dB) Mating Sexless, coplanar by means of threaded ring housed
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7x10-3
RG214/U
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Untitled
Abstract: No abstract text available
Text: Vdd 16,17,62,98,99 8,9,12,14,64,96 M30302MEP-002FP XIN 15 1 XOUT 13 FCR10.0MC5 V1H/V1L 3 V2H/V2L CL1 CL2 2 *BUILT-IN LOADING CAPACITOR CL1/CL2=20/20pF +/-20% Oscillating circuit for evaluation
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M30302MEP-002FP
FCR10
20/20pF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA ^0^7 240 002flE?75 37ñ TC51V4265DFTS60/70 PRELIMINARY 262,144 WORD X 16 BIT DYNAMIC RAM Description TheTC51V4265D FTS is the new generation dynamic RAM organized 262,144 word by 16 bits. TheTC51V4265DFTS uti lizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating mar
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002flE
TC51V4265DFTS60/70
TheTC51V4265D
TheTC51V4265DFTS
TC51V4265DFTS
TC51V4265DFTS-60/70
DR04061194
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Untitled
Abstract: No abstract text available
Text: IC dependence of oscillating characteristics M30302MEP-002FP FCR8.0MC5 - S Room Temp. Udd [U] 5 item a~e M30302MEP-002FP - HH FCR8.0MC5 (Fig.a~e) Udd= 5 EU] Q 0 Tupical [U1_ a. U1H/U1L J I I I I b. U2H/U2L U2H iU2L
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M30302MEP-002FP
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h 9645
Abstract: FCR16
Text: IC dependence of oscillating characteristics M30302MEP-002FP Room Temp. FCR16.0M2G - S Udd [U] CLI/CL2 CpF] 5 item a~e 5/ 5 M30302MEP- 002FP - HH CL I/C L 2 CpF] 5 / 5 F C R I 6 . 0M2G (F ig.a~e) Udd= 5 EU] Q a . U 1H/U 1L J I I I I b. U2 H/U 2L I -I 3 C
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M30302MEP-002FP
FCR16
M3B302MEP-002FP
h 9645
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Untitled
Abstract: No abstract text available
Text: N AI1ER PHILIPS/DISCRETE bTE J> 1,1,53=531 DAT JJ 002fi42b U BUT12F BUT12AF L SILICON DIFFUSED POWER TRAN SISTO RS High-voltage, high-speed, glass-passivated npn power transistors in a S O T 186 envelope intended for use in converters, inverters, switching regulators, motor control systems, etc.
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002fi42b
BUT12F
BUT12AF
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Untitled
Abstract: No abstract text available
Text: •I bb53^31 002flT33 624 N AHER PHILIPS/DISCRETE IAPX b lE BLV20 D V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran
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002flT33
BLV20
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bSE D • L.b53R31 002fllRfl S23 « A P X Objectivespecification Philips Semiconductors NPN general purpose transistor 2PC4081 FE A T U R E S • S-mini package • Low output capacitance, C 0b = 2 p F typ. . DESCRIPTION NPN transistor in a plastic three lead
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b53R31
002fllRfl
2PC4081
2PC4081Q
2PC4081R
2PC4081S
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592-2222-013F
Abstract: 592-3030-013F 592-2020-013F 592-2121-002F 592-2222-002F multicolor led 2 pin 592-2023-0 lrj 59
Text: REV. PART POSITION NUMBER 592-2020-002F 1 POSITION RED RED 5 9 2 - 2 0 2 0 - 0 1 3F [Hl.EFF] [Hl.EFF] 592-2023-002F RED 2 GREEN 5 9 2 - 2 0 2 3 - 0 1 3F [Hl.EFF] 592-2 1 2 1 -002F RED RED 5 9 2 - 2 1 2 1 - 0 1 3F [AIGaAs ] [AIGaAs] 592-XXX-002F PACKAGING SPECIFICATION
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592-2020-002F
592-2020-013F
592-2023-002F
592-2023-013F
592-2121-002F
592-2121-0I3F
592-2124-013F
592-2222-002F
592-2222-013F
592-2320-002F
592-2222-013F
592-3030-013F
592-2020-013F
multicolor led 2 pin
592-2023-0
lrj 59
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591-2201-0I3F
Abstract: F-591
Text: PART NUMBER LED COL O R LED CO L O R - H l . EFF. / RED OPERATING CHARACTERISTICS 5 9 1 - 2 0 0 1 -002F 5 9 1 - 2 0 0 1 -007F HI.EFF. RED RED LUMINOUS 5 9 1 - 2 0 0 1 - 0 1 3F INTENSITY 5 9 1 - 2 1 0 1 -002F 591-2101 -0 0 7F AIGaaS RED FORWARD VOLTAGE 5 9 1 - 2 1 0 1 - 0 1 3F
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591-2001-002F
591-2001-0I3F
591-2101-002F
591-2101-007F
591-2101-0I3F
591-2201-002F
591-2201-007F
591-2201-0I3F
591-2301-002F
591-2401-007F
591-2201-0I3F
F-591
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Untitled
Abstract: No abstract text available
Text: PART N UMBER LED C O L O R = LED C O LO R Hl.EFF. / RED - GR E E N REV - YELLOW LED C OL O R O P E R A T I N G C H A R A C T E R I S T I C S AT 25 C A M B I E N T 591 - 2 0 0 1 - 002F MIN CHARACTERISTICS 591 - 2 0 0 1 - 007F HI.EFF. RED 591 - 2 0 0 1 - 0I3F
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-002F
-007F
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE blE D IAPX bbS3R31 002flflb2 7UH l BLU60/28 UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and emitter ballasting resistors for an optimum temperature profile
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bbS3R31
002flflb2
BLU60/28
BLU60/28
OT119)
bbS3T31
nt44i
MCA440
MCA439
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b^E D • bb53R31 002flbi1fl S05 M A P X Philips Semiconductors Product specification Silicon diffused power transistor BU2522AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended
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bb53R31
002flbi1fl
BU2522AF
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Untitled
Abstract: No abstract text available
Text: DIALIGHT PART NUMBER POSITION 1 POSITION 2 592 - 2 02 0 -002F 5 9 2- 20 20 - 0 13F RED RED [HI.EFF] [HI.EFF] 2 592 - 2 02 3 -002F 5 9 2- 20 23 - 0 13F IHI.EFF] GREEN 2 RED 5 9 2 - 2 1 2 1 -002F RED RED 5 9 2- 21 21 - 0 13F 5 9 2 - 21 24-002F 5 92 - 2 1 24 - 01 3F
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-002F
24-002F
592-2222-002F
592-2320-002F
592-2323-002F
592-2324-002F
592-2326-002F
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5912004002F
Abstract: No abstract text available
Text: PART NUMBE R LED COLOR OPERATING CHARACTERISTICS AT 25°C COLOR MI N TYP MA X RED 6.0 1 1 .0 16.0 5 9 1 - 2 0 0 4 - 0 1 3F GREEN 3.0 5.0 8.0 591-2304-002F YELLOW 8.0 14.0 20.0 ORANGE 9.0 16.0 24.0 CHARACTERISTICS 591-2004-002F 591-2004-007F RED AMBIENT TEST
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591-2004-002F
591-2004-007F
591-2304-002F
591-2304-007F
591-2404-002F
591-2404-007F
591-2504-002F
591-2504-007F
5912004002F
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bRE D • bbS3R31 002fl37b 724 « A P X Philips specification Silicon diffused power transistor BU2520D GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic
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bbS3R31
002fl37b
BU2520D
bbS3T31
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transistor 2n3053
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'lE D bbSBTBl 002fll3b Eflb I IAPX 2N30b3 A SILICON PLANAR TRANSISTOR N-P-N transistor in a TO-39 metal envelope designed for medium speed, saturated and non-saturated switching applications for industrial service. QUICK REFERENCE DATA
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002fll3b
2N30b3
transistor 2n3053
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Untitled
Abstract: No abstract text available
Text: IC dependence of oscillating characteristics M30302MEP-002FP FCR10.0MC5 - S Room Temp. Udd [U] 5 item a~e M30302MEP-002FP - HH FCRI0.0MC5 Udd= 5 EU] (Fig.a~e) Q a. U1H/U1L B Typical [U1 I I I I I I I I I I I I I I I I I I l_ b. U2H/U2L CUI_
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M30302MEP-002FP
FCR10
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Untitled
Abstract: No abstract text available
Text: REV ECN NO DRN CKD APR DATE 00 N.O MS 3 -28-07 REVISIONS NEW RELEASE 593-XXXXXX-002F PACKAGING SPECIFICATION 593-XXXXXX-013F .0591 -.0039 [1 .5+10 ] 157 O O O O O O O Q-J [1.75] S.2G5 it.on [56.0 +/- 0.3] 2.063 [52.40] O Cj— r~ . Direction 7 of feed .767 [20.0]
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593-XXXXXX-002F
3fC/60Z
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002f
Abstract: No abstract text available
Text: REV. PA RT NUMBER POSITION I POSITION 2 592 - 2020 - 002F RED RED 592 - 2020 - 0 I3F 592 - 2 0 2 3 - 002F 5 9 2 - 2 0 2 3 - 0 I3F 592 - 2 I 2 I - 002F 592 - 2 I 2 I -0 I3F 592-2 I24-002F 5 9 2 - 2 I 2 4 - 0 I3F 592 - 2222 - 002F [HI.EFF] [H I.EFF] 2 [HI.EFF]
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I24-002F
592-2326-002F
592-2424-002F
592-2626-002F
002f
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