MSM5117405
Abstract: MSM5117405B
Text: O K I Semiconductor MSM5 1 17405B_ E2G0039-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117405B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117405B achieves high integration, high-speed operation, and low-power
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E2G0039-17-41
MSM5117405B_
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MSM5117405
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 116 4 0 0 B_ E2G0033-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116400B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5116400B achieves high integration, high-speed operation, and low-power
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E2G0033-17-41
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MSM5116400B
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cycles/64
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1 17405B_ E2G0039-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117405B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117405B achieves high integration, high-speed operation, and low-power
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17405B_
E2G0039-17-41
304-Word
MSM5117405B
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1 17400B_ E2G0035-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117400B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117400B achieves high integration, high-speed operation, and low-power
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17400B_
E2G0035-17-41
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MSM5117400B
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msm5116405b
Abstract: No abstract text available
Text: O K I Semiconductor MSM5116405B_ E 2 G 0 0 3 7 -1 7 -4 1 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5116405B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5116405B achieves high integration, high-speed operation, and low-power
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E2G0037-17-41
MSM5116405B_
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MSM5116405B
26/24-pin
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5116405B_ E 2 G 0 0 3 7 -1 7 -4 1 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5116405B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5116405B achieves high integration, high-speed operation, and low-power
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OCR Scan
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PDF
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MSM5116405B_
304-Word
MSM5116405B
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SQJ26/24-P-300-1
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MSM5117400
Abstract: MSM5117400B
Text: O K I Semiconductor MSM5 1 17400B_ E2G0035-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117400B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117400B achieves high integration, high-speed operation, and low-power
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OCR Scan
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E2G0035-17-41
MSM5117400B_
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MSM5117400B
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MSM5117400
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MSM5116400B
Abstract: 5116400
Text: O K I Semiconductor MSM5 116 4 0 0 B_ E2G0033-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116400B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5116400B achieves high integration, high-speed operation, and low-power
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OCR Scan
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MSM5116400B
304-Word
E2G0033-17-41
MSM5116400B
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5116400
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Untitled
Abstract: No abstract text available
Text: O K I Sem iconductor MSM5116100 A_ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116100A is a new generation dynamic organized as 16,777,216 word x 1-bit. The technology used to fabricate the MSM5116100A is OKI’s CMOS silicon gate process technology.
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MSM5116100
216-Word
MSM5116100A
cydes/64m
2424D
SQJ26/24-P-300-1
S0J26/24-P-300-1
0024b37
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