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    5116400 Price and Stock

    RAFI USA Inc 5.05.511.640/0000

    RING ILLUMINATION D 23.7 PLUNGER
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    DigiKey 5.05.511.640/0000 Bag 80 1
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    Master Electronics 5.05.511.640/0000
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    Weidmüller Interface GmbH & Co. KG 9511640000

    TERM BLK 7POS SIDE ENT 7.5MM PCB
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    DigiKey 9511640000 Bulk 100
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    Newark 9511640000 Bulk 50
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    PEI Genesis 351-1640-000

    SS-2 MOUNTING RING
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    Carling Technologies LT-1511-640-012

    SWITCH TOGGLE
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    DigiKey LT-1511-640-012 Bulk 10
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    Mouser Electronics LT-1511-640-012 85
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    Newark LT-1511-640-012 Bulk 10
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    Master Electronics LT-1511-640-012 311
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    Sager LT-1511-640-012 497 1
    • 1 $17.35
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    • 100 $14.84
    • 1000 $7.69
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    Carling Technologies LT-1511-640-024

    SWITCH TOGGLE SPST 15A 125V
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    DigiKey LT-1511-640-024 Bulk 10
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    Mouser Electronics LT-1511-640-024
    • 1 $21.36
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    Master Electronics LT-1511-640-024
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    5116400 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    5116400 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    5116400 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    5116400 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    5116400 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    5116400 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    WCs MARKING

    Abstract: SMD MARKING code ASC SMD MARKING CODE RAC 5117400
    Text: 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Fast Page Mode HYB 5116400BJ-50/-60 HYB 5117400BJ-50/-60 HYB 3116400BJ/BT-50/-60 HYB 3117400BJ-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation


    Original     		PDF 5116400BJ-50/-60 5117400BJ-50/-60 3116400BJ/BT-50/-60 3117400BJ-50/-60 400BJ-50/-60 400BJ/BT-50/-60 P-TSOPII-26/24-1 GPX05857 WCs MARKING SMD MARKING code ASC SMD MARKING CODE RAC 5117400

    k2624

    Abstract: D-50 D-60 MSM5116400 MSM5116400D MSM5116400D-50 MSM5116400D-60 MSM5116400D-70
    Text: 作成 ：1999 年 5 月 電子デバイス M SM 5116400D 4,194,304-Word x 4-Bit DYNAMIC RAM : 高 速 ペ ー ジ モ ー ド • 概要 5116400D はCMOS プロセス技術を用いた 4,194,304 ワードx4 ビット構成のダイナミックラ


    Original     		PDF 5116400D 304-Word MSM5116400D SOJ26/24 300mil SOJ26/24-P-300-1 MSM5116400D-xxSJ) TSOPII26/24-P-300-1 MSM5116400D-xxTS-K) k2624 D-50 D-60 MSM5116400 MSM5116400D MSM5116400D-50 MSM5116400D-60 MSM5116400D-70

    Q67100-Q1049

    Abstract: Q67100-Q1050 Q67100-Q1051
    Text: 4M x 4-Bit Dynamic RAM HYB 5116400BJ -50/-60/-70 Advanced Information • • • • • • • • • • • 4 194 304 words by 4-bit organization 0 to 70 ˚C operating temperature Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time


    Original     		PDF 5116400BJ 5116400BJ-50/-60/-70 GPJ05628 P-SOJ-26/24 Q67100-Q1049 Q67100-Q1050 Q67100-Q1051

    Untitled

    Abstract: No abstract text available
    Text: 5116400 Series Product Preview 4,194,304-Word x 4-Bit Dynamic Random Access Memory • DESCRIPTION 5116400J Series The Hitachi HM 5116400 is a C M O S dynamic R A M organized 4,194,304 words x 4 bits. It employs the most advanced C M O S technology for high performance and


    OCR Scan     		PDF HM5116400 304-Word HM5116400J ns/70 ns/80 ns/100 mW/440 mW/385 mW/330

    Untitled

    Abstract: No abstract text available
    Text: HB56A840BR Series 8 ,3 8 8 ,6 0 8 -w o rd x 4 0 -b it H ig h D e n s ity D y n a m ic R A M M o d u le The HB56A840BR is a 8 M x 40 dynamic RAM module, mounted 20 pieces of 16-Mbit DRAM H M 5116400AS sealed in SOJ package. An outline of the HB56A840BR is 72-pin single in­


    OCR Scan     		PDF HB56A840BR 16-Mbit 5116400AS) 72-pin HB56A840BR-6A HB56A840BR-7A

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S 4M X 4-Bit Dynamic RAM HYB 5116400BJ -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 ”C operating temperature • Performance: -50 -60 -70 ÍRAC R A S access time 50 60 70 *CAC C A S access time 13 15 20


    OCR Scan     		PDF 5116400BJ 5116400BJ-50/-60/-70 P-SOJ-26/24

    A10q

    Abstract: HM5116400Z-6 ice power 200 asc HM5116400Z HM5116400TT-7 CSR BLE HM5116400Z8
    Text: blE D • HMTbSGB DD23 351 E7M ■ H I T 2 H M 511 6 4 0 0 S e r i e s - HITACHI/ LOGIC/ARRAYS/MEM 4,194,304-w ord x 4-bit D ynam ic R andom A c c e s s Memory The H itachi H M 5116400 is a CMOS dynamic RAM organized 4,194,304 w ords x 4 bits. It employs the most advanced CMOS technology for


    OCR Scan     		PDF DD23351 HM5116400 304-word mW/385 mW/358 16-bit mo400 M4Tb203 A10q HM5116400Z-6 ice power 200 asc HM5116400Z HM5116400TT-7 CSR BLE HM5116400Z8

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 4M X 4-Bit D yn am ic RAM H YB 5116400J-50/-60/-70/-80 Advanced Inform ation • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Fast access and cycle time RAS access time: 50 ns -50 version 60 ns (-60 version) 70 ns (-70 v e rs io n )


    OCR Scan     		PDF 5116400J-50/-60/-70/-80 soj-28/24 23SLG5 P-SOJ-28/24 23SLDS

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5 1 16400_ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESCRIPTIO N The M SM 5116400 is a new generation dynam ic organized as 4,194,304-w ord x 4-bit. The technology used to fabricate the M SM 5116400 is O K I's C M O S silicon gate process technology.


    OCR Scan     		PDF MSM5116400 304-Word 304-w cycles/64ms b72454D

    Untitled

    Abstract: No abstract text available
    Text: 5116400 Series HM5117400 Series 4,194,304-word x 4-bit Dynamic RAM HITACHI ADE-203-648D Z Rev. 4.0 Jun. 12, 1997 Description The Hitachi H M 5116400 Series, H M 5117400 Series are CMOS dynamic RAMs organized 4,194,304-word X 4-bit. They employ the m ost advanced 0.5 |Jm CMOS technology for high performance and low power.


    OCR Scan     		PDF HM5116400 HM5117400 304-word ADE-203-648D 300-mil 26-pin ns/70

    M5116400

    Abstract: No abstract text available
    Text: H M 5116400 S e rie s Product Preview 4,194,304-Word x 4-Bit Dynamic Random A c c e s s Memory • DESCRIPTION The Hitachi H M 5116400 is a C M O S dynamic R A M organized 4,194,304 words x 4 bits. It employs the most advanced C M O S technology for high performance and


    OCR Scan     		PDF HM5116400 304-Word ns/70 ns/80 ns/100 mW/330 M5116400

    D0241

    Abstract: MSM5116400
    Text: O K I Semiconductor MSC23837-XXBS18/DS18 8,388,608-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC23837-xxBS18/D S18 is a fully decoded 8,388,608-w ord x 36-bit CMOS Dynam ic Random Access M em ory M odule com posed of eighteen 16-Mb DRAMs in SOJ M SM 5116400 packages m ounted


    OCR Scan     		PDF MSC23837-xxBS18/DS18 608-Word 36-Bit MSC23837-xxBSl8 /DS18 16-Mb MSM5116400) 72-pin D0241 MSM5116400

    5116400AJ

    Abstract: No abstract text available
    Text: SIEMENS 4M X 4-Bit Dynamic RAM HYB 5116400AJ-50/-60/-70/-80 HYB 5116400ASJ-50/-60/-70/-80 Advanced Inform ation • • • • • • • • • • • • 4 194 304 w ords by 4-bit organization 0 to 70 "C operating temperature Fast access and cycle time


    OCR Scan     		PDF 5116400AJ-50/-60/-70/-80 5116400ASJ-50/-60/-70/-80 0235b05 5116400AJ

    bt60

    Abstract: siemens im 304 Q1050
    Text: SIEMENS 4M X 4-Bit Dynamic RAM HYB 5116400BJ -50/-60/-70 HYB 5116400BT -50/-60/-70 Advanced Inform ation • 4 194 304 words by 4-bit organization • 0 to 70 C operating tem perature • Fast access and cycle time RAS access time: 50 ns -50 version 60 ns (-60 version)


    OCR Scan     		PDF 5116400BJ 5116400BT bt60 siemens im 304 Q1050

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 4M X 4-Bit Dynamic RAM HYB 5116400BJ -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 -70 50 60 70 ns ns Í rac RAS access time fcAC CAS access time 13 15 20 tpA


    OCR Scan     		PDF 5116400BJ QG0hb33 5116400BJ-50/-60/-70

    Untitled

    Abstract: No abstract text available
    Text: SIEM EN S 4 M X 4-Bit Dynamic RAM HYB 5116400AJ-50/-60/-70/-80 HYB 5116400ASJ-50/-60/-70/-80 Advanced Information • • • • • • • • • • • • 4 194 304 words by 4-bit organization 0 to 70 "C operating temperature Fast access and cycle time


    OCR Scan     		PDF 5116400AJ-50/-60/-70/-80 5116400ASJ-50/-60/-70/-80 235b05

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 4 M X 4-Bit Dynamic RAM HYB 5116400AJ-50/-60/-70/-80 HYB 5116400ASJ-50/-60/-70/-80 Advanced Inform ation • 4 194 304 words by 4-bit organization • 0 to 70 ’C operating temperature • Fast access and cycle time RAS access time: 50 ns -50 version


    OCR Scan     		PDF 5116400AJ-50/-60/-70/-80 5116400ASJ-50/-60/-70/-80 385from

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS 4M X 4-Bit Dynamic RAM HYB 5116400BJ -50/-60/-70 HYB 5116400BT -50/-60/-70 Advanced Inform ation • • • • • 4 194 304 w ords by 4-bit organization 0 to 70 'C operating tem perature Fast access and cycle time RAS access time: 50 ns -50 version


    OCR Scan     		PDF 5116400BJ 5116400BT

    Untitled

    Abstract: No abstract text available
    Text: 5116400 Series HM5117400 Series 4,194,304-word x 4-bit Dynamic RAM HITACHI ADE-203-648C Z Rev. 3.0 Feb. 27, 1997 Description The Hitachi HM 5116400 Series, HM 5117400 Series are CMOS dynamic RAMs organized 4,194,304-word x 4-bit. They employ the most advanced 0.5 (J.m CMOS technology for high performance and low power.


    OCR Scan     		PDF HM5116400 HM5117400 304-word ADE-203-648C 300-mil 26-pin

    MSM5116400

    Abstract: MSM5116400A
    Text: O K I Semiconductor 5116400A_ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5116400A is a 4,194,304-word x 4-bit dynam ic R A M fabricated in O K I's C M O S silicon gate technology. The 5116400A achieves high integration, high-speed operation, and low-power


    OCR Scan     		PDF MSM5116400A_ 304-Word MSM5116400A 26/24-pin cycles/64 MSM5116400

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HY5117400B ,H Y 5116400B 4Mx4, Fast Page mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 4,194,304 x 4 -bit configuration w ith Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    OCR Scan     		PDF HY5117400B 5116400B

    MSM5116400

    Abstract: ms51164
    Text: O K I Sem iconductor MSM 5 1 1 6 4 0 0 _ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5116400 is a new generation dynam ic organized as 4,194,304-w ord x 4-bit. The technology u sed to fabricate the M SM 5116400 is OKI's C M O S silicon gate process technology.


    OCR Scan     		PDF MSM5116400_ 304-Word MSM5116400 cycles/64ms MSM5116400 b72HBH0 ms51164

    Untitled

    Abstract: No abstract text available
    Text: 5116400L Series Product Preview Low Power Version 4,194,304-Word x 4-Bit Dynamic Random A c c e s s Memory • DESCRIPTION HM 5116400LJ Series The Hitachi HM 5116400 is a C M O S dynamic RAM organized 4,194,304 words x 4 bits. It employs the most advanced C M O S technology for high performance and


    OCR Scan     		PDF HM5116400L 304-Word 5116400LJ ns/70 ns/80 ns/100 mW/440 mW/385 mW/330

    HA53

    Abstract: MSM5116400 EA-55
    Text: O K I Semiconductor MSC23833-XXBS16/DS16 8,388,608-Word by 32-Bit DRAM Module: Fast Page Mode D ESC R IPTIO N The OKI M SC 23833-xxBS16/D S16 is a fully decoded 8,388,608-word x 32-bit CM OS Dynamic Random Access Memory Module composed of sixteen 16-Mb DRAM s in SOJ M SM 5116400 packages mounted


    OCR Scan     		PDF MSC23833-xxBS16/DS16 608-Word 32-Bit MSC23833-xxBS16/DS16 16-Mb MSM5116400) 72-pin HA53 MSM5116400 EA-55