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    0.8 ENAMEL COATED COPPER WIRE, 9ID, 20T Search Results

    0.8 ENAMEL COATED COPPER WIRE, 9ID, 20T Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SF-NDCCGJ28GB-003M Amphenol Cables on Demand Amphenol SF-NDCCGJ28GB-003M 3m SFP28 Cable - Amphenol 25-Gigabit Ethernet SFP28 Direct Attach Copper Cable (9.8 ft) - 26 AWG (Low-Loss Version) Datasheet
    SF-NDCCGJ28GB-002M Amphenol Cables on Demand Amphenol SF-NDCCGJ28GB-002M 2m SFP28 Cable - Amphenol 25-Gigabit Ethernet SFP28 Direct Attach Copper Cable (6.6 ft) - 26 AWG (Low-Loss Version) Datasheet
    SF-NDCCGJ28GB-005M Amphenol Cables on Demand Amphenol SF-NDCCGJ28GB-005M 5m SFP28 Cable - Amphenol 25-Gigabit Ethernet SFP28 Direct Attach Copper Cable (16.4 ft) - 26 AWG Datasheet
    SF-NDAAFJ100G-002M Amphenol Cables on Demand Amphenol SF-NDAAFJ100G-002M 2m (6.6') 100GbE QSFP28 Cable - Amphenol 100-Gigabit Ethernet Passive Copper QSFP Cable (SFF-8665 802.3bj) - QSFP28 to QSFP28 (26-AWG Low-Loss) Datasheet
    CS-DSDMDB09MF-010 Amphenol Cables on Demand Amphenol CS-DSDMDB09MF-010 9-Pin (DB9) Deluxe D-Sub Cable - Copper Shielded - Male / Female 10ft Datasheet

    0.8 ENAMEL COATED COPPER WIRE, 9ID, 20T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC2099

    Abstract: 2SC2099 equivalent 22AF copper wire 20WPEP
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2099 2 ~ 3 0M Hz SSB LINEAR POWER AMPLIFIER APPLICATIONS. Unit in mm LOW SUPPLY VOLTAGE USE FEATURES : . Specified 12.5V, 28MHz Characteristics • Output Power Po-20Wpj?p Minimum Gain Gpe=12dB Efficiency nc=35%(Min.)


    OCR Scan     		PDF 2SC2099 28MHz Po-20Wpj -30dB -150pF 200pF 250pF 100/iF 150pF 2SC2099 2SC2099 equivalent 22AF copper wire 20WPEP

    2SC2509

    Abstract: 10WPEP 0.8 ENAMEL COATED COPPER WIRE, 9ID, 20T 121ID AC75 C8 15t
    Text: 2SC2509 S IL IC O N N P N 'E P IT A X IA L P L A N A R TYPE Unit in mm 2 -30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE P- FEATURES : _ § I 1 £ to 1 . Specified 12.5V, 28MHz Characteristics . | irj H : Output Power : Po=10WpEP <


    OCR Scan     		PDF 2SC2509 2-30MHz 28MHz 10WpeP -30dB 121ID, 30lnA 10WPEP 0.8 ENAMEL COATED COPPER WIRE, 9ID, 20T 121ID AC75 C8 15t

    2SC2395

    Abstract: E5OU 12ID 2SC239
    Text: TOSHIBA 2SC2395 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2395 Unit in mm 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Specified 12.5V, 28MHz Characteristics Output Power Po = 10WpEP (Min.) Power Gain Gp = 17dB (Min.)


    OCR Scan     		PDF 2SC2395 30MHz 28MHz 000MHz 001MHz 961001EAA2' 2SC2395 E5OU 12ID 2SC239

    2sc2099

    Abstract: No abstract text available
    Text: TOSHIBA 2SC2099 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE QQ Unit in mm 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE Specified 12.5V, 28MHz Characteristics Output Power Po = 20W pEP Gtïr = 12dB (Min.) Power Gain rj Q = 35% (Min.)


    OCR Scan     		PDF 2SC2099 30MHz 28MHz --30dB 961001E 2sc2099

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA -CDISCRETE/OPTOJ 9097250 TOSHIBA ~5b DE~J TDTTESD 00D7S4b □ 56C 0 7 5 4 6 <DIS C R E T E/ OP TO r~33-°? o SILICON NPN EPITA XIA L PLANAR TYPE Unit in mm 2 ~ 3 0 M H z SSB LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE) y _ § IS


    OCR Scan     		PDF 00D7S4b 28MHz -30dB 400pF 200pF 121ID,

    2SC2395

    Abstract: CC125 AN374 NC35
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2395 2 ~ 3 0M Hz SSB LINEAR POWER AMPLIFIER APPLICATIONS. Unit in mm LOW SUPPLY VOLTAGE USE FEATURES : . Specified 12.5V, 28MHz Characteristics Output Power : Po=10WpEP Minimum Gain : Gpe=17dB Efficiency nc=35%(Min.)


    OCR Scan     		PDF 2SC2395 10WpEP 28MHz -30dB 150pF 200pF 350pF 2SC2395 CC125 AN374 NC35

    2SC2290

    Abstract: 12ID 2SC2290 equivalent
    Text: TOSHIBA 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm Specified 12.5V, 28MHz Characteristics Output Power Po = 60WpEP (Min.) Power Gain Gp = 11.8dB (Min.)


    OCR Scan     		PDF 2SC2290 30MHz 28MHz 60Wpep 000MHz 001MHz 961001EAA2' 2SC2290 12ID 2SC2290 equivalent

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 7 Ç C 7 7 Q fl Unit in mm 2~30M Hz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Specified 12.5V, 28MHz Characteristics Output Power Po = 60WpEP (Min.) Power Gain


    OCR Scan     		PDF 2SC2290 28MHz 60WpEP 961001EAA2'

    2SC2395

    Abstract: No abstract text available
    Text: TOSHIBA 2SC2395 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2395 2-30MHZ SSB LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE U nit in mm Cu Z-03.Z±G .l • H £ Specified 12.5V, 28MHz Characteristics Power : Po = lOWp^p K n —_l/7iud fFl


    OCR Scan     		PDF 2SC2395 2-30MHZ 28MHz --30dB UC115 961001E 2SC2395

    60WpEp

    Abstract: 10WV 12ID 2SC2290 the industrial linear 0.8 ENAMEL COATED COPPER WIRE, 9ID, 20T 2-13B1A J-021 TRANSISTOR 2sC2290
    Text: TOSHIBA 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE • • V / / / A Xr i X > T \ X * IA c A X . \ < ' X "H 02 ^ x ^ = r) Q = 'V i S b % — MAXIMUM RATINGS (Tc 25°C)


    OCR Scan     		PDF 2SC2290 30MHz 28MHz 60Wpep -30dB 961001EAA2' 10WV 12ID 2SC2290 the industrial linear 0.8 ENAMEL COATED COPPER WIRE, 9ID, 20T 2-13B1A J-021 TRANSISTOR 2sC2290

    2SC2509

    Abstract: AC75
    Text: TOSHIBA -CDISCRETE/OPTOJ 9097250 TOSHIBA ~5b DeTJiG^SSD 56C <DIS CR ET E/ OP TO 07546 D D D 7 S 4t. □ r - 3 3 ~ ° ? o 2SC2509 S IL IC O N NPN E P IT A X IA L P LA N A R T Y P E _ Unit in mm 2 ~ 3 0 M H z SSB LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE)


    OCR Scan     		PDF 2SC2509 2-30MHz 28MHz 10WpeP -30dE 400pF 200pF 30lnA lllllltlllllIIII11I1IIIIEII1II11IIlllilIl llllllllII11III1LLIIMIEllllllllllIlltllEl AC75

    2-13B1A

    Abstract: Transistor S5B 2SC2290 equivalent 2sc2290
    Text: TO SH IB A 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2 -3 0 M H Z S5B LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE Unit in mm Specified 12.5V, 28MHz Characteristics Output Power Po = 60WpEP Power Gain Gp = 11.8dB (Min.)


    OCR Scan     		PDF 2SC2290 28MHz 60WpEP --30dB 961001EAA2' 2-13B1A Transistor S5B 2SC2290 equivalent 2sc2290

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC2099 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 1 Ç C 1 fl Q Q 2~30M Hz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm Specified 12.5V, 28MHz Characteristics Output Power Po = 20WpEP (Min.) Power Gain


    OCR Scan     		PDF 2SC2099 28MHz 20WpEP

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC2395 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm 2~30M Hz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Specified 12.5V, 28MHz Characteristics Output Power Po = 10WpEP (Min.) Power Gain Gp = 17dB (Min.)


    OCR Scan     		PDF 2SC2395 28MHz 10WpEP 2-10H1A