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    0.35 UM CMOS GATE AREA Search Results

    0.35 UM CMOS GATE AREA Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TB67H481FTG Toshiba Electronic Devices & Storage Corporation Stepping and Brushed Motor Driver /Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / IN input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation

    0.35 UM CMOS GATE AREA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CMOS

    Abstract: AF32K8AF25 NMOS native pspice model resistor bsim3 6T SRAM micron cmos sensor connection BSIM3 nmos transistor pmos Vt bsim3 model
    Text: 0.25 m CMOS Process FC025 MIXED-SIGNAL FOUNDRY EXPERTS 0.25 Micron CMOS Technology Description Key Features Applications Quality Assurance Deliverables Digital Libraries Analog Libraries Primitive Devices The FC025 series is X-FAB’s 0.25-micron Modular


    Original     		PDF FC025 FC025 25-micron CMOS AF32K8AF25 NMOS native pspice model resistor bsim3 6T SRAM micron cmos sensor connection BSIM3 nmos transistor pmos Vt bsim3 model

    MIL-STD-883 Method 3015.7

    Abstract: atmel lot marking eeprom atmel 922 AT89C5114 breakdown gate oxide atmel 336 DYNAMIC RAM CROSS REFERENCE Atmel eeprom Cross Reference Atmel 434 Atmel AT35523 Product Reliability Test
    Text: T8xC5121 QualPack Qualification Package T8xC5121 C51 Microcontrollers T8xC5121 FEBRUARY 2003 Rev. 0 – 2003 February 1 T8xC5121 QualPack 1 Table of contents 1 TABLE OF CONTENTS .2


    Original     		PDF T8xC5121 T8xC5121 MIL-STD-883 Method 3015.7 atmel lot marking eeprom atmel 922 AT89C5114 breakdown gate oxide atmel 336 DYNAMIC RAM CROSS REFERENCE Atmel eeprom Cross Reference Atmel 434 Atmel AT35523 Product Reliability Test

    0.35Um 1P4M

    Abstract: nmos transistor 0.35 um
    Text: 0.35um 1P4M Logic 3.3V updated in 2005.03.24 Features ƒ Vdd Core/IO 3.3V / 5V ƒ Starting Material P(100), Non-Epi ƒ Well Retrograde Twin Well Structure ƒ Isolation Conventional LOCOS ƒ Transistor Dual Gate CMOS Gate Length (Ldrawn) 0.35um Channel Buried Channel PMOS


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    2P4M P 82

    Abstract: of 2p4m transistor 2p4m 2P4M cmos transistor 0.35 um nmos transistor 0.35 um 0.35 um CMOS gate area 0.35um cmos transistor parameters
    Text: 0.35um 2P4M Mixed Signal 3.3V / 5V updated in 2005.03.24 Features ƒ Vdd Core/IO 3.3V / 5V ƒ Starting Material P(100), Non-Epi ƒ Well Retrograde Twin Well Structure ƒ Isolation Conventional LOCOS ƒ Transistor Dual Gate CMOS Gate Length (Ldrawn) 0.35um


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    TRANSISTOR 545

    Abstract: No abstract text available
    Text: 0.35um 1P4M Logic 3.3V /5V updated in 2005.03.24 Features ƒ Vdd Core/IO 3.3V / 5V ƒ Starting Material P(100), Non-Epi ƒ Well Retrograde Twin Well Structure ƒ Isolation Conventional LOCOS ƒ Transistor Dual Gate CMOS Gate Length (Ldrawn) 0.35um Channel


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    TQFP-80

    Abstract: AT83C51SND1C AT89C5131 T85C5121 JESD22-A101 JESD22-A110 Q100 TQFP80 TS16949 atmel 442
    Text: AT83C51SND1C QualPack Qualification Package AT83C51SND1C C51 Microcontroller MP3 Decoder AT83C51SND1C September 2003 Rev. 0 – 2003 September 1 AT83C51SND1C QualPack 1 Table of contents 1 TABLE OF CONTENTS .2


    Original     		PDF AT83C51SND1C AT83C51SND1C TQFP-80 AT89C5131 T85C5121 JESD22-A101 JESD22-A110 Q100 TQFP80 TS16949 atmel 442

    MOS RM3

    Abstract: mos rm3 data "X-Fab" Core cell library ESD "p-well" n-well" XH035 0.18 um CMOS Spiral Inductor technology bsim3v3 RM3 transistors Q100 analog devices transistor tutorials
    Text: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and


    Original     		PDF XA035 XA035 35-micron XH035 MOS RM3 mos rm3 data "X-Fab" Core cell library ESD "p-well" n-well" 0.18 um CMOS Spiral Inductor technology bsim3v3 RM3 transistors Q100 analog devices transistor tutorials

    XH035 library

    Abstract: depl "X-Fab" Core cell library nmos transistor 0.35 um cmos transistor 0.35 um CMOS spice model Q100 XH035 analog devices transistor tutorials MOS RM3
    Text: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and


    Original     		PDF XA035 XA035 35-micron XH035 XH035 library depl "X-Fab" Core cell library nmos transistor 0.35 um cmos transistor 0.35 um CMOS spice model Q100 analog devices transistor tutorials MOS RM3

    T89C51RD2 Marking

    Abstract: AT89C5114 AT89C5131 JESD22-A101 JESD22-A110 JESD22-A118 Q100 T89C5115 TS16949 flash "high temperature data retention" mechanism
    Text: T89C5115 QualPack Qualification Package T89C5115 Low Pin Count FLASH 8-bit C51 with ADC T89C5115 OCTOBER 2003 Rev. 1 – 2003 October 1 T89C5115 QualPack 1 Table of contents 1 TABLE OF CONTENTS .2


    Original     		PDF T89C5115 T89C5115 T89C51RD2 Marking AT89C5114 AT89C5131 JESD22-A101 JESD22-A110 JESD22-A118 Q100 TS16949 flash "high temperature data retention" mechanism

    UM 66 datasheet

    Abstract: UM 66 in
    Text: 0.22um 1P5M Logic 2.5V /3.3V updated in 2005.03.21 Features ƒ ƒ ƒ ƒ Vdd Core/IO Well Isolation Transistor Channel Gate Oxide Gate Material LDD & Source/Drain ƒ Metallization Barrier Metal Metal Stacked Via ƒ Lithography ƒ Speed (nsec/gate) 2.5V/3.3V


    Original     		PDF 27um2 32um2 UM 66 datasheet UM 66 in

    hv2300

    Abstract: AXTO bsim3 model for 0.18 micron technology for hspice adc04 x-fabs 0.8um nmos bsim3 model parameters bsim3 model analog devices transistor tutorials analogue digital converter instrumentation delta application instrumentation projects
    Text: 0.8 m CMOS Process CX08 MIXED-SIGNAL FOUNDRY EXPERTS 0.8 Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The CX08 Series is X-FAB‘s 0.8 Micron Modular Mixed Signal Technology. Main target applications are standard cell, semi-custom and full custom


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    AT89C51RD2 -um

    Abstract: AT89C51RD2 AT89C51E2 atmel package marking atmel at89c51ed2 AT89C51ED2 ATMEL 634 AT89C51ED2 UM AT89C5131 JESD22-A101
    Text: AT89C51RD2 / AT89C51ED2 QualPack Qualification Package AT89C51ED2 FLASH 8-bit C51 Microcontroller 64 Kbytes FLASH, 2 Kbytes EEPROM AT89C51RD2 / AT89C51ED2 JULY 2003 Rev. 0 – 2003 July 1 AT89C51RD2 / AT89C51ED2 QualPack 1 Table of contents 1 TABLE OF CONTENTS. 2


    Original     		PDF AT89C51RD2 AT89C51ED2 AT89C51ED2 AT89C51RD2 -um AT89C51E2 atmel package marking atmel at89c51ed2 ATMEL 634 AT89C51ED2 UM AT89C5131 JESD22-A101

    Untitled

    Abstract: No abstract text available
    Text: 0.25um 2P5M Mixed Signal 2.5V / 3.3V updated in Oct 01, 2004 Features ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ Vdd Core/IO Starting Material Well Isolation Transistor Gate Length (Ldrawn) Channel Gate Oxide Gate Material LDD & Source/Drain Inter-Layer-Dielectric Metallization


    Original     		PDF 32um2 36um2 30um2 100um2

    MTBF calculation

    Abstract: AT89C5131 T89C51CC02 JESD22-A110 TSS463 JESD22-A101 JESD22-A118 Q100 TS16949 AT89C5114
    Text: T89C51CC02 QualPack Qualification Package T89C51CC02 CAN Networking with FLASH 8-bit C51 T89C51CC02 OCTOBER 2003 Rev. 1 – 2003 October 1 T89C51CC02 QualPack 1 Table of contents 1 TABLE OF CONTENTS .2


    Original     		PDF T89C51CC02 T89C51CC02 MTBF calculation AT89C5131 JESD22-A110 TSS463 JESD22-A101 JESD22-A118 Q100 TS16949 AT89C5114

    IL311ANM

    Abstract: tda8362b ILa1519B1Q iff4n60 IN1307N tda8890 IL311AN IL91214AN MC74HC123AN IL258D
    Text: SEMICONDUCTOR PRODUCTS SHORT FORM CATALOG INTEGRAL 2010-2011 INTEGRAL JSC reserves the right to make changes in device design, specifications and other information identified in this publication without notice and assumes no responsibility for the use of any device described herein.


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    486DX-CPU

    Abstract: tamagawa 486DX transistors mos retrograde well 0.35
    Text: MOS Scaling: Transistor Challenges for the 21st Century Scott Thompson, Portland Technology Development, Intel Corp. Paul Packan, Technology Computer Aided Design, Intel Corp. Mark Bohr, Portland Technology Development, Intel Corp. Index words: SDE, transistor, scaling


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    TUNABLE VCO 10GHZ

    Abstract: MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT 0.18 um CMOS VCO 10GHZ oscillator 8563E spectrum analyzer
    Text: A 10GHz CMOS Distributed Voltage Controlled Oscillator1 Hui Wu and Ali Hajimiri Department of Electrical Engineering, California Institute of Technology, Pasadena, CA 91125, USA Abstract A 10 GHz CMOS distributed voltage controlled oscillator DVCO is designed in a 0.35µm BiCMOS process technology using only CMOS transistors. The oscillator achieves a


    Original     		PDF 10GHz TUNABLE VCO 10GHZ MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT 0.18 um CMOS VCO 10GHZ oscillator 8563E spectrum analyzer

    AT89C5131

    Abstract: JESD22-A118 T89C51CC01 T89C51AC2 JESD22-A101 Q100 T89C51AC2 TS16949 ATMEL package qualification
    Text: T89C51AC2 QualPack Qualification Package T89C51AC2 FLASH C51 Microcontroller with A/D Converter T89C51AC2 FLASH C51 Microcontroller OCTOBER 2003 Rev. 1– 2003 October 1 T89C51AC2 QualPack 1 Table of contents 1 TABLE OF CONTENTS .2


    Original     		PDF T89C51AC2 T89C51AC2 AT89C5131 JESD22-A118 T89C51CC01 T89C51AC2 JESD22-A101 Q100 TS16949 ATMEL package qualification

    TSMC 0.35um

    Abstract: ED-4701-3-B122A tsmc 0.35 um CMOS gate area PBGA 256 reflow profile Volt, SPDM, CMOS ED-4701-1-C111A ISO-9000 PI7C7300 PI7C8150-33 PI7C8152
    Text: Reliability Summary Report PCI Bridge Products March 20, 2003 Updated Total Life Test Hours Reliability by Design Page 1 of 16 INDEX: Commitment to Quality: Page 3 Product Family and Wafer Fab Process: Page 4 Wafer Fab Subcontractors and Codes: Page 4 Standard Package Type Code and Dimensions:


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    MOS RM3

    Abstract: mos rm3 data XO035 Silicon Image 1364 cmos transistor 0.35 um analog devices transistor tutorials "X-Fab" Core cell library 6E-08 opto mos application ESD "p-well" n-well"
    Text: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing


    Original     		PDF XO035 XO035 35micron MOS RM3 mos rm3 data Silicon Image 1364 cmos transistor 0.35 um analog devices transistor tutorials "X-Fab" Core cell library 6E-08 opto mos application ESD "p-well" n-well"

    transistor bL P09

    Abstract: MB625xxx mb62xxxx mb620 transistor phl 218 MB623xxx mb625 MB624xxx N4KD FPT-70P-M
    Text: FUJITSU MIC R OE LE CT RON IC S 23E D 374=17132 0 0 1 0 2 5 3 7 _ F U JITSU T - 4 2 - 4 U UHB SERIES 1.5// CMOS GATE ARRAYS K _ MB62XXXX MB60XXXX September 1988 Edition 1.1 DESCRIPTION The UHB series of 1.5-mlcron CMOS gate arrays Is a highly Integrated low-power, ultra high-speed product family that derives Its


    OCR Scan     		PDF MB62XXXX MB60XXXX T-160P F160001S-2C 40-LEAD OIP-40P-M U1M1T60 D40008S-1Ç transistor bL P09 MB625xxx mb620 transistor phl 218 MB623xxx mb625 MB624xxx N4KD FPT-70P-M

    Untitled

    Abstract: No abstract text available
    Text: FU JITSU UHB SERIES 1.5p CMOS GATE ARRAYS MB62XXXX MB60XXXX Septem ber 1988 Edition 1.1 DESCRIPTION The UHB series o f 1 .5-m icron CMOS gate arrays Is a highly Integrated low -pow er, ultra high-speed product fam ily th a t derives its enhanced perform ance and increased user flexibility fro m the use of a system -proven, dual-colum n gate s tru ctu re and 2-layer


    OCR Scan     		PDF MB62XXXX MB60XXXX FPT-160PM01) 40-LEAD DIP-40P-M01) 54JTYP 40006S-1C

    RS flip flop cmos

    Abstract: full subtractor circuit using nor gates PC7001 subtractor using TTL CMOS full subtractor circuit using and gates RCA 528 CGA100-121 PC7003 AD01D1 CGA100
    Text: High-Retiability ASICs CGA100 Series These data sheets are provided fo r technical guidance only. The "final device perform ance may vary depending upon the final device design and configuration. Advanced Continuous Gate* Technology 1.5-Micron CMOS Gate-Array Series


    OCR Scan     		PDF CGA100 PC7C01-3 PC7C11-3 PC7S01-3 PC7S11-3 RS flip flop cmos full subtractor circuit using nor gates PC7001 subtractor using TTL CMOS full subtractor circuit using and gates RCA 528 CGA100-121 PC7003 AD01D1

    UPD65891

    Abstract: HPD71051 PD65891 PD71054 PD71055 PD71059 K1271 CMOS-N5 K729 CMOS-N5 Gate Array ICs
    Text: GATE ARRAY AND EMBEDDED ARRAY Renesas Electronics w w w .renesas.com 2010.11 Renesas Electronics gate arrays and embedded arrays enjoy an excellent reputation among our customers based on 25 years of unequalled quality. ASIC products have become increasingly diversified. Our


    OCR Scan     		PDF OS-12M R05CL0001EJ0200 UPD65891 HPD71051 PD65891 PD71054 PD71055 PD71059 K1271 CMOS-N5 K729 CMOS-N5 Gate Array ICs