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    0.2MH DIODE Search Results

    0.2MH DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    0.2MH DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FERRITE TRANSFORMER 20khz toroid

    Abstract: 105c inductor 1mh 15A 50KHZ inductor HT EE 19 transformer FERRITE core ee TRANSFORMER 4mh inductor CHIP INDUCTOR 3.3uH 2.5A HIGH FREQUENCY Transformer ee 19A HM catalog mosfet Transistor smd datasheets FERRITE TRANSFORMER 20khz toroid
    Text: bi441 short form 2007 dev.qxd 6/26/07 8:59 AM Page 19 Magnetics 19 Power Magnetics Transformers Model HM31 HM32 HM33 HM41 HM80 Industry Style Current Sense Current Sense Current Sense Gate Drive ISDN Isolation Inductance Range 1.3mH to 195mH 0.2mH to 85mH


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    PDF bi441 195mH 20KHz 250KHz 300KHz 192kbps 40KHz 30MHz FERRITE TRANSFORMER 20khz toroid 105c inductor 1mh 15A 50KHZ inductor HT EE 19 transformer FERRITE core ee TRANSFORMER 4mh inductor CHIP INDUCTOR 3.3uH 2.5A HIGH FREQUENCY Transformer ee 19A HM catalog mosfet Transistor smd datasheets FERRITE TRANSFORMER 20khz toroid

    100v 20a fast recovery power diode

    Abstract: Power MOSFET 50V 20A MOSFET 40A 100V 100v 20a mosfet N_CHANNEL MOSFET 100V MOSFET
    Text: LTP40N10 N-Channel 100V Power MOSFET Features: • Avalanche energy specified • Diode is characterized for use in bridge circuits •Source to Drain diode recovery time comparable to a discrete fast recovery diode. Application BVDSS=100V , • DC to DC converter


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    PDF LTP40N10 to175 100v 20a fast recovery power diode Power MOSFET 50V 20A MOSFET 40A 100V 100v 20a mosfet N_CHANNEL MOSFET 100V MOSFET

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    Abstract: No abstract text available
    Text: DMN2005UFG 20V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI RDS ON max ID max TA = 25°C (t<10s) 4.6mΩ @ VGS = 4.5V 24.1A V(BR)DSS 20V Features and Benefits • Low RDS(ON) – ensures on state losses are minimized • Small form factor thermally efficient package enables higher


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    PDF DMN2005UFG DS36943

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    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UPC8026 Power MOSFET 30V, 13A N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UPC8026 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low leakage current and high forward


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    PDF UPC8026 UPC8026 UPC8026L-S08-R UPC8026G-S08-R QW-R502-600

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    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT8067 Preliminary Power MOSFET 9A, 30V, N-CHANNEL MOSFET  DESCRIPTION The UTC UT8067 is an N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, etc.


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    PDF UT8067 UT8067 UT8067G-S08-R QW-R210-005

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    Abstract: No abstract text available
    Text: RS1G300GN Nch 40V 30A Power MOSFET Datasheet l Outline VDSS 40V RDS on (Max.) 2.5mΩ ID ±30A PD 3W HSOP8 l Inner circuit l Features 1) Low on - resistance.


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    PDF RS1G300GN

    Untitled

    Abstract: No abstract text available
    Text: RQ3G100GN Nch 40V 10A Power MOSFET Datasheet l Outline VDSS 40V RDS on (Max.) 14.3mΩ ID ±10A PD 2W HSMT8 l Inner circuit l Features 1) Low on - resistance.


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    PDF RQ3G100GN G100GN

    Mosfet RM3

    Abstract: datasheet IC 4060B schematic diagram Electronic Ballast Metal Halide schematic hid lamp ballast schematic diagram Electronic Ballast HID rm3 transistor schematic 250W street lamp ballast 34262 dimmable HID BALLAST schematic hid ballast 250w
    Text: APPLICATION NOTE AN-1022 International Rectifier • 233 Kansas Street El Segundo CA 90245 USA IR2159: 250W Metal Halide HID Dimmable Ballast By T. Ribarich TOPICS COVERED Introduction Basic Circuit Considerations Schematic Diagrams 1. INTRODUCTION The following design is a fully-functional dimming ballast adjusted specifically for a 250W Metal Halide HID


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    PDF AN-1022 IR2159: IR2159 ove60B Mosfet RM3 datasheet IC 4060B schematic diagram Electronic Ballast Metal Halide schematic hid lamp ballast schematic diagram Electronic Ballast HID rm3 transistor schematic 250W street lamp ballast 34262 dimmable HID BALLAST schematic hid ballast 250w

    Untitled

    Abstract: No abstract text available
    Text: PD - 94348 HEXFET POWER MOSFET SURFACE MOUNT SMD-1 IRL7N1404 40V, N-CHANNEL Product Summary Part Number BVDSS IRL7N1404 40V RDS(on) 0.006Ω ID 55A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance


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    PDF IRL7N1404

    IRL7N1404

    Abstract: LOGICGATE smd diode 5s
    Text: PD - 94348A HEXFET POWER MOSFET SURFACE MOUNT SMD-1 IRL7N1404 40V, N-CHANNEL Product Summary Part Number BVDSS IRL7N1404 40V RDS(on) 0.006Ω ID 55A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance


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    PDF 4348A IRL7N1404 IRL7N1404 LOGICGATE smd diode 5s

    AN-7514

    Abstract: fdd3672 5V GATE TO SOURCE VOLTAGE MOSFET MARKING 44a FDD3672-F085
    Text: FDD3672_F085 N-Channel UltraFET Trench MOSFET 100V, 44A, 28mΩ Features Applications „ Typ rDS on = 24mΩ at VGS = 10V, ID = 44A „ DC/DC converters and Off-Line UPS „ Typ Qg(10) = 24nC at VGS = 10V „ Distributed Power Architectures and VRMs „ Low Miller Charge


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    PDF FDD3672 AN-7514 5V GATE TO SOURCE VOLTAGE MOSFET MARKING 44a FDD3672-F085

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    Abstract: No abstract text available
    Text: PD - 94348A HEXFET POWER MOSFET SURFACE MOUNT SMD-1 IRL7N1404 40V, N-CHANNEL Product Summary Part Number BVDSS IRL7N1404 40V RDS(on) 0.006Ω ID 55A* Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance


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    PDF 4348A IRL7N1404

    Untitled

    Abstract: No abstract text available
    Text: Datasheet LED Driver for Lighting Series Electrolytic Capacitor Free Buck Converter LED Driver BD555A1AFV ●General Description BD555A1AFV is a LED driver best for LED lighting applications. It supports dimming. Constant current switching controller for AC/DC buck converter is


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    PDF BD555A1AFV BD555A1AFV

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    Abstract: No abstract text available
    Text: FDD3672_F085 N-Channel UltraFET Trench MOSFET 100V, 44A, 28mΩ Features Applications ̈ Typ rDS on = 24mΩ at VGS = 10V, ID = 44A ̈ DC/DC converters and Off-Line UPS ̈ Typ Qg(10) = 24nC at VGS = 10V ̈ Distributed Power Architectures and VRMs ̈ Low Miller Charge


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    PDF FDD3672

    Untitled

    Abstract: No abstract text available
    Text: BD555A1AFV Datasheet LED Driver for Lighting Series Electrolytic Capacitor Free Buck Converter LED Driver BD555A1AFV ●General Description BD555A1AFV is a LED driver best for LED lighting applications. It supports dimming. Constant current switching controller for AC/DC buck converter is


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    PDF BD555A1AFV BD555A1AFV

    Untitled

    Abstract: No abstract text available
    Text: QS8M31 60V Nch+Pch Power MOSFET Datasheet l Outline Symbol VDSS RDS on (Max.) ID PD Tr1:Nch Tr2:Pch 60V TSMT8 -60V 112mΩ 210mΩ ±3A ±2A 1.5W l Features 1) Low on - resistance.


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    PDF QS8M31

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    Abstract: No abstract text available
    Text: TPCP8004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅣ TPCP8004 Notebook PC Applications Unit: mm Portable Equipment Applications 0.33 ± 0.05 0.05 Small footprint due to a small and thin package • High speed switching • Small gate charge: Qg = 26nC (typ.)


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    PDF TPCP8004

    fdb8444

    Abstract: No abstract text available
    Text: FDB8444 N-Channel PowerTrench MOSFET 40V, 70A, 5.5mΩ Features Applications ̈ Typ rDS on = 3.9mΩ at VGS = 10V, ID = 70A ̈ Automotive Engine Control ̈ Typ Qg(TOT) = 91nC at VGS = 10V ̈ Powertrain Management ̈ Low Miller Charge ̈ Solenoid and Motor Drivers


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    PDF FDB8444 O-263AB FDB8444

    FDB8444

    Abstract: No abstract text available
    Text: FDB8444 N-Channel PowerTrench MOSFET 40V, 70A, 5.5mΩ Features Applications „ Typ rDS on = 3.9mΩ at VGS = 10V, ID = 70A „ Automotive Engine Control „ Typ Qg(TOT) = 91nC at VGS = 10V „ Powertrain Management „ Low Miller Charge „ Solenoid and Motor Drivers


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    PDF FDB8444 O-263AB FDB8444

    BP107

    Abstract: FGR3000AH-40 FGR3000AH-50 powerex gate turn-off gto
    Text: b4E D mumnex TETMbEl GODbObS 7T2 « P R X FGR3000AH POUIEREX INC Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, Fnnce(43) 72.75.15 Reverse Conducting Gate-Turn-Off Thyristors


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    PDF FGR3000AH BP107, L-40A, BP107 FGR3000AH-40 FGR3000AH-50 powerex gate turn-off gto

    gate-turn-off device

    Abstract: 1S697 BP107 FGR2000BH-40 FGR2000BH-50 powerex gate turn-off gto
    Text: b4E D m m e • 7£T4b21 00GbG57 bBb HIPRX FGR2000BH x POIiIEREX INC Powerex, Inc., Hillia Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France(43) 72.75.15 Reverse Conducting Gate-Turn-Off Thyristors


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    PDF FGR2000BH BP107, FGR2000BH-40 Amperes/2000 gate-turn-off device 1S697 BP107 FGR2000BH-50 powerex gate turn-off gto

    RFA100N05E

    Abstract: GC200 100N05E ff048
    Text: ffl h a r r is J a n u a ry 1 9 9 3 RFA 100N05E N-Channel Enhancem ent-M ode Power Field-Effect Transistor MegaFET Package Features • 100A, 50V • rDS(on) = 0 -0 0 8 fi D R A IN • Electrostatic Discharge Rated • UIS SOA Rating Curve (Single Pulse)


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    PDF 100N05E RFA100N05E 23e-12 55e-9 1e-030 14e-9) 37e-5) GC200 100N05E ff048

    SFD5390

    Abstract: SFT501 SFT502 SFT503 SFT504 SPT5240 power darlington 100W
    Text: SOLI» STATE DEVICES 1EE I NC D |ù3fc>L>011 0 0 0 2 0 7 3 *1 | r - 33-a? PRELIMINARY DATA SHEET S F D 5390 5 AMP NPN D A R L I N G T O N T R A N S I S T O R 14830 Valley View Avenue La Mirada, California 90638 213 921-9660 TWX 910-583-4807 FAX 213-921-2396


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    PDF SFD5390 300ns 125Vdc, 350us, SFT501 SFT502 SFT503 SFT504 SPT5240 power darlington 100W

    step down chopper

    Abstract: 6ca DIODE cd 4534 STK731 ci 4534 1000fif DIODE 6ca STK731B dc chopper circuit for overload protection HP054
    Text: Ordering number : EN4534 Thick Film Hybrid 1C STK731B No. 4534 sa m y o 12 V Single Output MOS Chopper Regulator Overview Features The STK731B is a chopper type step-down dedicated 12 V single output regulator that uses a power MOSFET as its switching element. The STK731B covers the 2 A


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    PDF EN4534 STK731B STK731B step down chopper 6ca DIODE cd 4534 STK731 ci 4534 1000fif DIODE 6ca dc chopper circuit for overload protection HP054