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Untitled Abstract: No abstract text available Text: DMN2005UFG 20V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI RDS ON max ID max TA = 25°C (t<10s) 4.6mΩ @ VGS = 4.5V 24.1A V(BR)DSS 20V Features and Benefits • Low RDS(ON) – ensures on state losses are minimized • Small form factor thermally efficient package enables higher	Original	DMN2005UFG DS36943	PDF

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Untitled

Abstract: No abstract text available
Text: DMN2005UFG 20V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI RDS ON max ID max TA = 25°C (t<10s) 4.6mΩ @ VGS = 4.5V 24.1A V(BR)DSS 20V Features and Benefits • Low RDS(ON) – ensures on state losses are minimized • Small form factor thermally efficient package enables higher

Original

DMN2005UFG DS36943

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