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    0.18-UM SRAM Search Results

    0.18-UM SRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD2114A-5 Rochester Electronics LLC SRAM Visit Rochester Electronics LLC Buy
    27S03ADM/B Rochester Electronics LLC 27S03A - SRAM Visit Rochester Electronics LLC Buy
    29705/BXA Rochester Electronics LLC 29705 - SRAM Visit Rochester Electronics LLC Buy
    29705APCB Rochester Electronics LLC 29705A - SRAM Visit Rochester Electronics LLC Buy
    27S03ALM/B Rochester Electronics LLC 27S03A - SRAM Visit Rochester Electronics LLC Buy

    0.18-UM SRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    r1ex24xxx

    Abstract: Renesas spi sh SH7084 HN58C1001 Series SH7085 R1EX25064Axx00G 1 mbit 28 pin dip eeprom R1EX25xxx Renesas spi Parallel EEPROM - Application Notes
    Text: Renesas Memories General Presentation October 2010 Renesas EEPROM Renesas Electronics Corporation SRAM EEPROM Design Department. Standard Product Business Devision. Analog & Power Device Business Unit. http://www.renesas.com/ 10/01/2010 3-1 Rev.2.00 2010. Renesas Electronics Corporation. All rights reserved.


    Original     		PDF HN58V1001 HN58C1001 HN58V256A HN58V257A HN58C256A HN58C257A HN58V65A HN58V66A r1ex24xxx Renesas spi sh SH7084 HN58C1001 Series SH7085 R1EX25064Axx00G 1 mbit 28 pin dip eeprom R1EX25xxx Renesas spi Parallel EEPROM - Application Notes

    K6X8016T3B-UF55

    Abstract: K6X4008C1F-UF55 HM216514TTI5SE k6x4008c1f uf55 K6X4016T3F-UF70 K6X4008T1F-UF70 HM28100TTI5SE K6X8008T2B-UF55 M5M51008DFP-70HI K6X4008T1F-BF70
    Text: SRA SRAM mories RENESAS Low Power SRAM Roadmap Density LOW 2005 2006 256 KB x8 0.6 µm 1MB x8 0.25 µm 2 MB x8 / x16 0.25 µm 4 MB Middle 8 MB Large 2007 0.18 µm 2008 Status • Stable support x8 / x16 0.15 µm Advanced LPSRAM Vcc = 3.3V ver. x8 / x16 0.18 µm


    Original     		PDF AUS-2154 D-65510 K6X8016T3B-UF55 K6X4008C1F-UF55 HM216514TTI5SE k6x4008c1f uf55 K6X4016T3F-UF70 K6X4008T1F-UF70 HM28100TTI5SE K6X8008T2B-UF55 M5M51008DFP-70HI K6X4008T1F-BF70

    magnachip 0.18um

    Abstract: nmos transistor 0.35 um TI 046 magnachip 0.18um 1p6m
    Text: 0.18um 1P6M Low power 1.8V /3.3V updated in 2005.03.16 Features ƒ Vdd Core/IO 1.8V / 3.3V ƒ Substrate P-sub ƒ Well Retrograde Twin Well (Triple Well option) ƒ Isolation STI (Shallow Trench Isolation) ƒ Gate Oxide 37Å/70Å NO Oxide (electrical) ƒ


    Original     		PDF

    0.18-um CMOS technology characteristics

    Abstract: atmel 048 MICRON RESISTOR Mos NMOS transistor 0.18 um CMOS atmel 018 0.18-um CMOS technology
    Text: RF CMOS RF cmos 0.18 Micron Technology Atmel's 0.18 micron RF CMOS process technology provides a low-cost solution for high-performance RF applications. Key Features Key Benefits • 1.8V CMOS Transistors • Low Power • 3.3V I/O • Low Cost • Embedded EEPROM


    Original     		PDF 5136B-05/06/1K 0.18-um CMOS technology characteristics atmel 048 MICRON RESISTOR Mos NMOS transistor 0.18 um CMOS atmel 018 0.18-um CMOS technology

    Untitled

    Abstract: No abstract text available
    Text: DM9000BEP Product Brief Ethernet Controller with General Processor Interface May. 2007 Rev.1.0 The DM9000B is a fully integrated and cost-effective low pin count single chip Fast Ethernet controller with a general processor interface, a 10/100M PHY and 4K Dword SRAM. It is


    Original     		PDF DM9000BEP DM9000B 10/100M 16-bit 10Base-T 100Base-TX 48-pin

    remote control rx tx

    Abstract: No abstract text available
    Text: DM9008CEP Product Brief Ethernet Controller with General Processor Interface June 2008 Rev.1.0 The DM9008C is a fully integrated and cost-effective low pin count Ethernet controller with a general processor interface, a Medial Access Control MAC , a 10Base-T PHY and 16K Byte SRAM. It is designed with low power and high


    Original     		PDF DM9008CEP DM9008C 10Base-T 16-bit 48-pin DM9008CEP remote control rx tx

    ARM1136J-S

    Abstract: ELDEC TOSHIBA TC160 ARM1136J TOSHIBA cmos image 1995 tc190c CMOS GATE ARRAYs toshiba TC190G TC280 Celaro
    Text: 2007-3 PRODUCT GUIDE CMOS ASICs To ensure competitiveness in the marketplace, you will need to produce more sophisticated, more technology-intensive and higher value-added products, using a process of technological innovation and systematic marketing. Toshiba's application-specific


    Original     		PDF BCE0032A S-167 BCE0032B ARM1136J-S ELDEC TOSHIBA TC160 ARM1136J TOSHIBA cmos image 1995 tc190c CMOS GATE ARRAYs toshiba TC190G TC280 Celaro

    405GP

    Abstract: 405GPR powerpc 405 PowerPc405GP powerpc 405gp ppc405gp IBM powerpc 405gp AMCC PPC 405GP 1/powerpc 405gp
    Text: PRODUC T BRIEF PowerPC 405GP/GPr Embedded Processor With speeds of up to 266 MHz 405GP or 400 MHz (405GPr), the PowerPC 405GP/GPr family of embedded processors provides an optimized balance of performance, low power, and features. These processors are ideally suited for general purpose Internet, communication, data storage, consumer, imaging


    Original     		PDF 405GP/GPr 405GP) 405GPr) 405GP/GPr to266 POWERPC405GP/GPr 405GP 405GPR powerpc 405 PowerPc405GP powerpc 405gp ppc405gp IBM powerpc 405gp AMCC PPC 405GP 1/powerpc 405gp

    servo track

    Abstract: hdd dsp SD5210 176pin
    Text: SD5210 Integrated Processor/DSP HDD Platform Device • FEATURES - - • - - - • Clock control - Writeable control store WCS -based sequencer included Supports headerless operation 8-bit Non-Return-to-Zero (NRZ) interface supporting data rates up to 450 Mbit/s


    Original     		PDF SD5210 T320C2700B0 servo track hdd dsp SD5210 176pin

    blood pressure circuit schematic

    Abstract: MT2131 mt494 blood glucose electronics circuit EP1C6Q240C8 U12M "7 Segment Displays" 4 units 7-segment LED display module 8088 memory interface SRAM glucose
    Text: FPGA-Based Clinical Diagnostic System using Pipelined Architectures in the Nios II Processor Third Prize FPGA-Based Clinical Diagnostic System using Pipelined Architectures in the Nios II Soft-Core Processor Institution: Jadavpur University, Calcutta Participants:


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    HBT 01 - 05

    Abstract: dr 25 germanium diode HBT 01 05G Silicon germanium Heterojunction Bipolar Transistor GERMANIUM SMALL SIGNAL TRANSISTORS poly silicon resistor 1lm2 0.18 um CMOS parameters hbt 05 HBT 01 - 01 G
    Text: A 0.18lm 90 GHz fT SiGe HBT BiCMOS, ASIC-Compatible, Copper Interconnect Technology for RF and Microwave Applications G. Freeman, D. Ahlgren, D.R. Greenberg*, R. Groves, F. Huang, G. Hugo, B. Jagannathan, S.J. Jeng, J. Johnson*, K. Schonenberg*, K. Stein, R. Volant, S. Subbanna


    Original     		PDF 90GHz, 90GHz HBT 01 - 05 dr 25 germanium diode HBT 01 05G Silicon germanium Heterojunction Bipolar Transistor GERMANIUM SMALL SIGNAL TRANSISTORS poly silicon resistor 1lm2 0.18 um CMOS parameters hbt 05 HBT 01 - 01 G

    DM9000BIEP

    Abstract: DM9000B dm9000bi DAVICOM SEMICONDUCTOR
    Text: DM9000BIEP Product Brief Ethernet Controller with General Processor Interface November 2008 Rev.1.0 The DM9000BI is a fully integrated and cost-effective low pin count single chip Fast Ethernet controller with a general processor interface, Supports Industrial-grade:


    Original     		PDF DM9000BIEP DM9000BI 10/100M 16-bit 10Base-T 100Base-TX 48-pin DM9000BIEP DM9000B DAVICOM SEMICONDUCTOR

    DM9000B

    Abstract: DM9000BEP DM9000 MII Processor
    Text: DM9000BEP Product Brief Ethernet Controller with General Processor Interface June 2008 Rev.1.0 The DM9000B is a fully integrated and cost-effective low pin count single chip Fast Ethernet controller with a general processor interface, a 10/100M PHY and 4K


    Original     		PDF DM9000BEP DM9000B 10/100M 16-bit 10Base-T 100Base-TX 48-pin DM9000 MII Processor

    8bit pwm generator

    Abstract: 300027 0x19C pwm Generator sound generator FR60 FR70 MB91460 sn* sound generator
    Text: Fujitsu Microelectronics Europe Application Note MCU-AN-300027-E-V10 FR FAMILY 32-BIT MICROCONTROLLER MB91460 SERIES SOUND GENERATION APPLICATION NOTE Sound generation Revision History Revision History Date 2006-03-14 Issue V1.0 OGl - Initial Version This document contains 31 pages.


    Original     		PDF MCU-AN-300027-E-V10 32-BIT MB91460 8bit pwm generator 300027 0x19C pwm Generator sound generator FR60 FR70 sn* sound generator

    S3C2412

    Abstract: uart protocol touch screen S3C2410A Samsung s3c2412 0.18-um CMOS technology length and width samsung NAND Flash DIE AMBA AHB memory controller 272-FBGA AMBA AHB bus arbiter nand fifo
    Text: Product Technical Brief S3C2412 Rev 2.2, Apr. 2006 Overview SAMSUNG's S3C2412 is a Derivative product of S3C2410A. S3C2412 is designed to provide hand-held devices and general applications with cost-effective, low-power, and high-performance micro-controller


    Original     		PDF S3C2412 S3C2412 S3C2410A. S3C2410A ARM926EJ 64-Byte 8-/16-bit 200MHz, 266MHz uart protocol touch screen Samsung s3c2412 0.18-um CMOS technology length and width samsung NAND Flash DIE AMBA AHB memory controller 272-FBGA AMBA AHB bus arbiter nand fifo

    mlc nand flash lsb msb

    Abstract: ISO7816 ISO7816-3 "saturation processing" "vector instructions" saturation seiko epson RAM IC MEMORY CARD
    Text: S1C33A01 CMOS 32-bit Application Specific Controller z z z z z z z z z z z z z z z 32-bit RISC CPU Core EPSON S1C33 PE core (Max. 90 MHz operation) 1KB Instruction Cache and 1KB Data Cache 100KB RAM (including cache and battery backup RAM) Programmable Operating Clock using PLL


    Original     		PDF S1C33A01 32-bit S1C33 100KB 64-bit 24-bit 16-ch. 8/16-bit mlc nand flash lsb msb ISO7816 ISO7816-3 "saturation processing" "vector instructions" saturation seiko epson RAM IC MEMORY CARD

    ECU car

    Abstract: 52-pin TSOP M5M5V108DVP-70HI r1lv0808 m5m5v108dkv M5M5V216ATP-70HI
    Text: [Preliminary] This product is under development and its specification might be changed without any notice. R1LV0816ASD -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit / 1M word x 8bit REJ03C0397-0001 Preliminary Rev.0.01 2009.12.08 Description The R1LV0816ASD is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit,


    Original     		PDF R1LV0816ASD 16bit REJ03C0397-0001 288-words 16-bit, 52pin R1WV6416R ECU car 52-pin TSOP M5M5V108DVP-70HI r1lv0808 m5m5v108dkv M5M5V216ATP-70HI

    Untitled

    Abstract: No abstract text available
    Text: KM684000UKM684000L-L CMOS SRAM 524,288 WORD X 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 55, 70, 85, 100ns Max. • Low Power Dissipation Standby (CMOS): 10(iW (Typ.) L Version 5/iW ITyp.) L-L Version Operating: 110mW /MHz (Max.)


    OCR Scan     		PDF KM684000UKM684000L-L 100ns 110mW KM6B4000LP/LP-L: 32-pin 600mil) KM684000LG/LG-L: 525mil) KM684000LT/LT-L:

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E » • 7 ^ 4 1 4 2 0017514 4SI ■ KM684000UKM684000L-L CMOS SRAM 524,288 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 55, 70, 85, 100ns Max. • Low Power Dissipation Standby (CMOS): 10/xW (Typ.) L Version


    OCR Scan     		PDF KM684000UKM684000L-L 100ns 10/xW 110mW KM684000LP/LP-L: 32-pin 600mil) KM684000LG/LGL: 525mil)

    pin diagram of ttl 74112

    Abstract: pin diagram of 74112 ttl 74112 CI 74112 L0821 L0619 bm42
    Text: SAMSUNG ELECTRONICS INC b?E » 7 c1 b M m 2 KM684000L/KM684000L-L 00175m MSI SriGK CMOS SRAM 524,288 WORD X 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Tim e: 55, 70, 85, 100ns Max. • Low P ow er D issipa tion Standby (CMOS): 1(VW (Typ.) L Version


    OCR Scan     		PDF KM684000L/KM684000L-L 00175m 100ns 110mW/MHz KM684000LP/LP-L: 32-pin 600mil) KM684000LG/LG-L: 525mil) pin diagram of ttl 74112 pin diagram of 74112 ttl 74112 CI 74112 L0821 L0619 bm42

    658512

    Abstract: No abstract text available
    Text: KM658512L/L-L Pseudo SRAM 524,288 WORD x 8 Bit CMOS Pseudo Static RAM FEATURES GENERAL DESCRIPTION • Fast A cc e s s T im e C E A cc e s s Tim e : 80, 100, 120ns M ax. The KM658512L/L-L is a 4,194,304-bits high-speed Pseudo S ta tic Random A ccess M em ory organized as


    OCR Scan     		PDF KM658512L/L-L 120ns 190ns 200/iA 32-pin 658512LT KM658512UL-L 658512

    Untitled

    Abstract: No abstract text available
    Text: IBM Microelectronics AAMJ SA-12 Standard Cell/Gate Array Premium ASICfor high performance, high density,; and low power applications H ig h lig h ts • 0.18 ¡jm effective c h a n n e l le ng th high industry requirem ents. Use SA-12 ASIC ga te ASICs and exte nsib le enough to


    OCR Scan     		PDF SA-12 07SA14216502 SA14-2165-02

    Untitled

    Abstract: No abstract text available
    Text: ii ii ii ii ii ii ii ii ACT-S128K32 High Speed - 4 iviegamt o k a m iviuiticnip ivioauie . • ■■ A ■ ■ ■ ■ ■ I ■■ I Features ■ ■ ■ ■ ■ ■ ■ 4 Low Power IDT or Samsung CMOS 128K x 8 SRAMs in one MCM


    OCR Scan     		PDF ACT-S128K32 68-Lead, 66-Lead, SCD1659

    ltdw

    Abstract: No abstract text available
    Text: TS248—E89Y Nov. 1989 FUJITSU DATA SHEET MB82B79-15-20 72K BIT HIGH SPEED BI-CMOS SRAM 8,192-WORD x 9-BIT Bi-CMOS HIGH SPEED STATIC RANDOM ACCESS MEMORY The Fujitsu MB82B79isa8,192 words by 8 bits static random access memory fabricated with a CMOS silicon gate process. To make power dissipation lower and high speed, peripheral


    OCR Scan     		PDF TS248--E89Y MB82B79-15-20 192-WORD MB82B79isa8 MB82B79 300mil DIP-28P-M04) MB82B79-15 MB82R79-20 ltdw