r1ex24xxx
Abstract: Renesas spi sh SH7084 HN58C1001 Series SH7085 R1EX25064Axx00G 1 mbit 28 pin dip eeprom R1EX25xxx Renesas spi Parallel EEPROM - Application Notes
Text: Renesas Memories General Presentation October 2010 Renesas EEPROM Renesas Electronics Corporation SRAM EEPROM Design Department. Standard Product Business Devision. Analog & Power Device Business Unit. http://www.renesas.com/ 10/01/2010 3-1 Rev.2.00 2010. Renesas Electronics Corporation. All rights reserved.
|
Original
|
HN58V1001
HN58C1001
HN58V256A
HN58V257A
HN58C256A
HN58C257A
HN58V65A
HN58V66A
r1ex24xxx
Renesas spi sh
SH7084
HN58C1001 Series
SH7085
R1EX25064Axx00G
1 mbit 28 pin dip eeprom
R1EX25xxx
Renesas spi
Parallel EEPROM - Application Notes
|
PDF
|
K6X8016T3B-UF55
Abstract: K6X4008C1F-UF55 HM216514TTI5SE k6x4008c1f uf55 K6X4016T3F-UF70 K6X4008T1F-UF70 HM28100TTI5SE K6X8008T2B-UF55 M5M51008DFP-70HI K6X4008T1F-BF70
Text: SRA SRAM mories RENESAS Low Power SRAM Roadmap Density LOW 2005 2006 256 KB x8 0.6 µm 1MB x8 0.25 µm 2 MB x8 / x16 0.25 µm 4 MB Middle 8 MB Large 2007 0.18 µm 2008 Status • Stable support x8 / x16 0.15 µm Advanced LPSRAM Vcc = 3.3V ver. x8 / x16 0.18 µm
|
Original
|
AUS-2154
D-65510
K6X8016T3B-UF55
K6X4008C1F-UF55
HM216514TTI5SE
k6x4008c1f uf55
K6X4016T3F-UF70
K6X4008T1F-UF70
HM28100TTI5SE
K6X8008T2B-UF55
M5M51008DFP-70HI
K6X4008T1F-BF70
|
PDF
|
magnachip 0.18um
Abstract: nmos transistor 0.35 um TI 046 magnachip 0.18um 1p6m
Text: 0.18um 1P6M Low power 1.8V /3.3V updated in 2005.03.16 Features Vdd Core/IO 1.8V / 3.3V Substrate P-sub Well Retrograde Twin Well (Triple Well option) Isolation STI (Shallow Trench Isolation) Gate Oxide 37Å/70Å NO Oxide (electrical)
|
Original
|
|
PDF
|
0.18-um CMOS technology characteristics
Abstract: atmel 048 MICRON RESISTOR Mos NMOS transistor 0.18 um CMOS atmel 018 0.18-um CMOS technology
Text: RF CMOS RF cmos 0.18 Micron Technology Atmel's 0.18 micron RF CMOS process technology provides a low-cost solution for high-performance RF applications. Key Features Key Benefits • 1.8V CMOS Transistors • Low Power • 3.3V I/O • Low Cost • Embedded EEPROM
|
Original
|
5136B-05/06/1K
0.18-um CMOS technology characteristics
atmel 048
MICRON RESISTOR Mos
NMOS transistor 0.18 um CMOS
atmel 018
0.18-um CMOS technology
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DM9000BEP Product Brief Ethernet Controller with General Processor Interface May. 2007 Rev.1.0 The DM9000B is a fully integrated and cost-effective low pin count single chip Fast Ethernet controller with a general processor interface, a 10/100M PHY and 4K Dword SRAM. It is
|
Original
|
DM9000BEP
DM9000B
10/100M
16-bit
10Base-T
100Base-TX
48-pin
|
PDF
|
remote control rx tx
Abstract: No abstract text available
Text: DM9008CEP Product Brief Ethernet Controller with General Processor Interface June 2008 Rev.1.0 The DM9008C is a fully integrated and cost-effective low pin count Ethernet controller with a general processor interface, a Medial Access Control MAC , a 10Base-T PHY and 16K Byte SRAM. It is designed with low power and high
|
Original
|
DM9008CEP
DM9008C
10Base-T
16-bit
48-pin
DM9008CEP
remote control rx tx
|
PDF
|
ARM1136J-S
Abstract: ELDEC TOSHIBA TC160 ARM1136J TOSHIBA cmos image 1995 tc190c CMOS GATE ARRAYs toshiba TC190G TC280 Celaro
Text: 2007-3 PRODUCT GUIDE CMOS ASICs To ensure competitiveness in the marketplace, you will need to produce more sophisticated, more technology-intensive and higher value-added products, using a process of technological innovation and systematic marketing. Toshiba's application-specific
|
Original
|
BCE0032A
S-167
BCE0032B
ARM1136J-S
ELDEC
TOSHIBA TC160
ARM1136J
TOSHIBA cmos image 1995
tc190c
CMOS GATE ARRAYs toshiba
TC190G
TC280
Celaro
|
PDF
|
405GP
Abstract: 405GPR powerpc 405 PowerPc405GP powerpc 405gp ppc405gp IBM powerpc 405gp AMCC PPC 405GP 1/powerpc 405gp
Text: PRODUC T BRIEF PowerPC 405GP/GPr Embedded Processor With speeds of up to 266 MHz 405GP or 400 MHz (405GPr), the PowerPC 405GP/GPr family of embedded processors provides an optimized balance of performance, low power, and features. These processors are ideally suited for general purpose Internet, communication, data storage, consumer, imaging
|
Original
|
405GP/GPr
405GP)
405GPr)
405GP/GPr
to266
POWERPC405GP/GPr
405GP
405GPR
powerpc 405
PowerPc405GP
powerpc 405gp
ppc405gp
IBM powerpc 405gp
AMCC PPC 405GP
1/powerpc 405gp
|
PDF
|
servo track
Abstract: hdd dsp SD5210 176pin
Text: SD5210 Integrated Processor/DSP HDD Platform Device • FEATURES - - • - - - • Clock control - Writeable control store WCS -based sequencer included Supports headerless operation 8-bit Non-Return-to-Zero (NRZ) interface supporting data rates up to 450 Mbit/s
|
Original
|
SD5210
T320C2700B0
servo track
hdd dsp
SD5210
176pin
|
PDF
|
blood pressure circuit schematic
Abstract: MT2131 mt494 blood glucose electronics circuit EP1C6Q240C8 U12M "7 Segment Displays" 4 units 7-segment LED display module 8088 memory interface SRAM glucose
Text: FPGA-Based Clinical Diagnostic System using Pipelined Architectures in the Nios II Processor Third Prize FPGA-Based Clinical Diagnostic System using Pipelined Architectures in the Nios II Soft-Core Processor Institution: Jadavpur University, Calcutta Participants:
|
Original
|
|
PDF
|
HBT 01 - 05
Abstract: dr 25 germanium diode HBT 01 05G Silicon germanium Heterojunction Bipolar Transistor GERMANIUM SMALL SIGNAL TRANSISTORS poly silicon resistor 1lm2 0.18 um CMOS parameters hbt 05 HBT 01 - 01 G
Text: A 0.18lm 90 GHz fT SiGe HBT BiCMOS, ASIC-Compatible, Copper Interconnect Technology for RF and Microwave Applications G. Freeman, D. Ahlgren, D.R. Greenberg*, R. Groves, F. Huang, G. Hugo, B. Jagannathan, S.J. Jeng, J. Johnson*, K. Schonenberg*, K. Stein, R. Volant, S. Subbanna
|
Original
|
90GHz,
90GHz
HBT 01 - 05
dr 25 germanium diode
HBT 01 05G
Silicon germanium Heterojunction Bipolar Transistor
GERMANIUM SMALL SIGNAL TRANSISTORS
poly silicon resistor
1lm2
0.18 um CMOS parameters
hbt 05
HBT 01 - 01 G
|
PDF
|
DM9000BIEP
Abstract: DM9000B dm9000bi DAVICOM SEMICONDUCTOR
Text: DM9000BIEP Product Brief Ethernet Controller with General Processor Interface November 2008 Rev.1.0 The DM9000BI is a fully integrated and cost-effective low pin count single chip Fast Ethernet controller with a general processor interface, Supports Industrial-grade:
|
Original
|
DM9000BIEP
DM9000BI
10/100M
16-bit
10Base-T
100Base-TX
48-pin
DM9000BIEP
DM9000B
DAVICOM SEMICONDUCTOR
|
PDF
|
DM9000B
Abstract: DM9000BEP DM9000 MII Processor
Text: DM9000BEP Product Brief Ethernet Controller with General Processor Interface June 2008 Rev.1.0 The DM9000B is a fully integrated and cost-effective low pin count single chip Fast Ethernet controller with a general processor interface, a 10/100M PHY and 4K
|
Original
|
DM9000BEP
DM9000B
10/100M
16-bit
10Base-T
100Base-TX
48-pin
DM9000
MII Processor
|
PDF
|
8bit pwm generator
Abstract: 300027 0x19C pwm Generator sound generator FR60 FR70 MB91460 sn* sound generator
Text: Fujitsu Microelectronics Europe Application Note MCU-AN-300027-E-V10 FR FAMILY 32-BIT MICROCONTROLLER MB91460 SERIES SOUND GENERATION APPLICATION NOTE Sound generation Revision History Revision History Date 2006-03-14 Issue V1.0 OGl - Initial Version This document contains 31 pages.
|
Original
|
MCU-AN-300027-E-V10
32-BIT
MB91460
8bit pwm generator
300027
0x19C
pwm Generator
sound generator
FR60
FR70
sn* sound generator
|
PDF
|
|
S3C2412
Abstract: uart protocol touch screen S3C2410A Samsung s3c2412 0.18-um CMOS technology length and width samsung NAND Flash DIE AMBA AHB memory controller 272-FBGA AMBA AHB bus arbiter nand fifo
Text: Product Technical Brief S3C2412 Rev 2.2, Apr. 2006 Overview SAMSUNG's S3C2412 is a Derivative product of S3C2410A. S3C2412 is designed to provide hand-held devices and general applications with cost-effective, low-power, and high-performance micro-controller
|
Original
|
S3C2412
S3C2412
S3C2410A.
S3C2410A
ARM926EJ
64-Byte
8-/16-bit
200MHz,
266MHz
uart protocol touch screen
Samsung s3c2412
0.18-um CMOS technology length and width
samsung NAND Flash DIE
AMBA AHB memory controller
272-FBGA
AMBA AHB bus arbiter
nand fifo
|
PDF
|
mlc nand flash lsb msb
Abstract: ISO7816 ISO7816-3 "saturation processing" "vector instructions" saturation seiko epson RAM IC MEMORY CARD
Text: S1C33A01 CMOS 32-bit Application Specific Controller z z z z z z z z z z z z z z z 32-bit RISC CPU Core EPSON S1C33 PE core (Max. 90 MHz operation) 1KB Instruction Cache and 1KB Data Cache 100KB RAM (including cache and battery backup RAM) Programmable Operating Clock using PLL
|
Original
|
S1C33A01
32-bit
S1C33
100KB
64-bit
24-bit
16-ch.
8/16-bit
mlc nand flash lsb msb
ISO7816
ISO7816-3
"saturation processing"
"vector instructions" saturation
seiko epson RAM IC MEMORY CARD
|
PDF
|
ECU car
Abstract: 52-pin TSOP M5M5V108DVP-70HI r1lv0808 m5m5v108dkv M5M5V216ATP-70HI
Text: [Preliminary] This product is under development and its specification might be changed without any notice. R1LV0816ASD -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit / 1M word x 8bit REJ03C0397-0001 Preliminary Rev.0.01 2009.12.08 Description The R1LV0816ASD is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit,
|
Original
|
R1LV0816ASD
16bit
REJ03C0397-0001
288-words
16-bit,
52pin
R1WV6416R
ECU car
52-pin TSOP
M5M5V108DVP-70HI
r1lv0808
m5m5v108dkv
M5M5V216ATP-70HI
|
PDF
|
Untitled
Abstract: No abstract text available
Text: KM684000UKM684000L-L CMOS SRAM 524,288 WORD X 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 55, 70, 85, 100ns Max. • Low Power Dissipation Standby (CMOS): 10(iW (Typ.) L Version 5/iW ITyp.) L-L Version Operating: 110mW /MHz (Max.)
|
OCR Scan
|
KM684000UKM684000L-L
100ns
110mW
KM6B4000LP/LP-L:
32-pin
600mil)
KM684000LG/LG-L:
525mil)
KM684000LT/LT-L:
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E » • 7 ^ 4 1 4 2 0017514 4SI ■ KM684000UKM684000L-L CMOS SRAM 524,288 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 55, 70, 85, 100ns Max. • Low Power Dissipation Standby (CMOS): 10/xW (Typ.) L Version
|
OCR Scan
|
KM684000UKM684000L-L
100ns
10/xW
110mW
KM684000LP/LP-L:
32-pin
600mil)
KM684000LG/LGL:
525mil)
|
PDF
|
pin diagram of ttl 74112
Abstract: pin diagram of 74112 ttl 74112 CI 74112 L0821 L0619 bm42
Text: SAMSUNG ELECTRONICS INC b?E » 7 c1 b M m 2 KM684000L/KM684000L-L 00175m MSI SriGK CMOS SRAM 524,288 WORD X 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Tim e: 55, 70, 85, 100ns Max. • Low P ow er D issipa tion Standby (CMOS): 1(VW (Typ.) L Version
|
OCR Scan
|
KM684000L/KM684000L-L
00175m
100ns
110mW/MHz
KM684000LP/LP-L:
32-pin
600mil)
KM684000LG/LG-L:
525mil)
pin diagram of ttl 74112
pin diagram of 74112
ttl 74112
CI 74112
L0821
L0619
bm42
|
PDF
|
658512
Abstract: No abstract text available
Text: KM658512L/L-L Pseudo SRAM 524,288 WORD x 8 Bit CMOS Pseudo Static RAM FEATURES GENERAL DESCRIPTION • Fast A cc e s s T im e C E A cc e s s Tim e : 80, 100, 120ns M ax. The KM658512L/L-L is a 4,194,304-bits high-speed Pseudo S ta tic Random A ccess M em ory organized as
|
OCR Scan
|
KM658512L/L-L
120ns
190ns
200/iA
32-pin
658512LT
KM658512UL-L
658512
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IBM Microelectronics AAMJ SA-12 Standard Cell/Gate Array Premium ASICfor high performance, high density,; and low power applications H ig h lig h ts • 0.18 ¡jm effective c h a n n e l le ng th high industry requirem ents. Use SA-12 ASIC ga te ASICs and exte nsib le enough to
|
OCR Scan
|
SA-12
07SA14216502
SA14-2165-02
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ii ii ii ii ii ii ii ii ACT-S128K32 High Speed - 4 iviegamt o k a m iviuiticnip ivioauie . • ■■ A ■ ■ ■ ■ ■ I ■■ I Features ■ ■ ■ ■ ■ ■ ■ 4 Low Power IDT or Samsung CMOS 128K x 8 SRAMs in one MCM
|
OCR Scan
|
ACT-S128K32
68-Lead,
66-Lead,
SCD1659
|
PDF
|
ltdw
Abstract: No abstract text available
Text: TS248—E89Y Nov. 1989 FUJITSU DATA SHEET MB82B79-15-20 72K BIT HIGH SPEED BI-CMOS SRAM 8,192-WORD x 9-BIT Bi-CMOS HIGH SPEED STATIC RANDOM ACCESS MEMORY The Fujitsu MB82B79isa8,192 words by 8 bits static random access memory fabricated with a CMOS silicon gate process. To make power dissipation lower and high speed, peripheral
|
OCR Scan
|
TS248--E89Y
MB82B79-15-20
192-WORD
MB82B79isa8
MB82B79
300mil
DIP-28P-M04)
MB82B79-15
MB82R79-20
ltdw
|
PDF
|