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    0.18-UM CMOS TECHNOLOGY CHARACTERISTICS Search Results

    0.18-UM CMOS TECHNOLOGY CHARACTERISTICS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    CS-SATDRIVEX2-001 Amphenol Cables on Demand Amphenol CS-SATDRIVEX2-001 Serial ATA Extension Cable - SATA II Drive Extension Cable with Power (6.0 Gbps) 1m Datasheet
    CS-SATDRIVEX2-002 Amphenol Cables on Demand Amphenol CS-SATDRIVEX2-002 Serial ATA Extension Cable - SATA II Drive Extension Cable with Power (6.0 Gbps) 2m Datasheet
    CS-SATDRIVEX2-000.5 Amphenol Cables on Demand Amphenol CS-SATDRIVEX2-000.5 Serial ATA Extension Cable - SATA II Drive Extension Cable with Power (6.0 Gbps) 0.5m Datasheet

    0.18-UM CMOS TECHNOLOGY CHARACTERISTICS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    0.18-um CMOS technology characteristics

    Abstract: atmel 048 MICRON RESISTOR Mos NMOS transistor 0.18 um CMOS atmel 018 0.18-um CMOS technology
    Text: RF CMOS RF cmos 0.18 Micron Technology Atmel's 0.18 micron RF CMOS process technology provides a low-cost solution for high-performance RF applications. Key Features Key Benefits • 1.8V CMOS Transistors • Low Power • 3.3V I/O • Low Cost • Embedded EEPROM


    Original     		5136B-05/06/1K 0.18-um CMOS technology characteristics atmel 048 MICRON RESISTOR Mos NMOS transistor 0.18 um CMOS atmel 018 0.18-um CMOS technology PDF

    HBT 01 - 05

    Abstract: dr 25 germanium diode HBT 01 05G Silicon germanium Heterojunction Bipolar Transistor GERMANIUM SMALL SIGNAL TRANSISTORS poly silicon resistor 1lm2 0.18 um CMOS parameters hbt 05 HBT 01 - 01 G
    Text: A 0.18lm 90 GHz fT SiGe HBT BiCMOS, ASIC-Compatible, Copper Interconnect Technology for RF and Microwave Applications G. Freeman, D. Ahlgren, D.R. Greenberg*, R. Groves, F. Huang, G. Hugo, B. Jagannathan, S.J. Jeng, J. Johnson*, K. Schonenberg*, K. Stein, R. Volant, S. Subbanna


    Original     		90GHz, 90GHz HBT 01 - 05 dr 25 germanium diode HBT 01 05G Silicon germanium Heterojunction Bipolar Transistor GERMANIUM SMALL SIGNAL TRANSISTORS poly silicon resistor 1lm2 0.18 um CMOS parameters hbt 05 HBT 01 - 01 G PDF

    Highly integrated CMOS RF SPDT switch with ESD and unit cell optimisation in MCM

    Abstract: TPC2A Alcatel-Lucent
    Text: Highly integrated CMOS RF SPDT switch with ESD and unit cell optimisation in MCM A.Y.-K. Chen Presented is the performance of a highly integrated RF single-pole double-throw SPDT switch fabricated in a 0.18 µm bulk CMOS process and housed in a low-cost laminated multi-chip module (MCML) package. A switch controller is also implemented and consumes


    Original     		PDF

    ARM1136J-S

    Abstract: ELDEC TOSHIBA TC160 ARM1136J TOSHIBA cmos image 1995 tc190c CMOS GATE ARRAYs toshiba TC190G TC280 Celaro
    Text: 2007-3 PRODUCT GUIDE CMOS ASICs To ensure competitiveness in the marketplace, you will need to produce more sophisticated, more technology-intensive and higher value-added products, using a process of technological innovation and systematic marketing. Toshiba's application-specific


    Original     		BCE0032A S-167 BCE0032B ARM1136J-S ELDEC TOSHIBA TC160 ARM1136J TOSHIBA cmos image 1995 tc190c CMOS GATE ARRAYs toshiba TC190G TC280 Celaro PDF

    R1LV1616

    Abstract: ECU car R1LV0816A R1LV08 HM62V8100 r1lp0408c m5m5v208akv R1LV0808ASB-5SI M5M5256DVP-70LL M5M5W817
    Text: R1LV0816ABG -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0393-0100 Rev.1.00 2009.12.08 Description The R1LV0816ABG is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.


    Original     		R1LV0816ABG 16bit) REJ03C0393-0100 288-words 16-bit, 48balls R1WV6416R R1LV1616 ECU car R1LV0816A R1LV08 HM62V8100 r1lp0408c m5m5v208akv R1LV0808ASB-5SI M5M5256DVP-70LL M5M5W817 PDF

    ECU car

    Abstract: 52-pin TSOP M5M5V108DVP-70HI r1lv0808 m5m5v108dkv M5M5V216ATP-70HI
    Text: [Preliminary] This product is under development and its specification might be changed without any notice. R1LV0816ASD -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit / 1M word x 8bit REJ03C0397-0001 Preliminary Rev.0.01 2009.12.08 Description The R1LV0816ASD is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit,


    Original     		R1LV0816ASD 16bit REJ03C0397-0001 288-words 16-bit, 52pin R1WV6416R ECU car 52-pin TSOP M5M5V108DVP-70HI r1lv0808 m5m5v108dkv M5M5V216ATP-70HI PDF

    hv2300

    Abstract: AXTO bsim3 model for 0.18 micron technology for hspice adc04 x-fabs 0.8um nmos bsim3 model parameters bsim3 model analog devices transistor tutorials analogue digital converter instrumentation delta application instrumentation projects
    Text: 0.8 m CMOS Process CX08 MIXED-SIGNAL FOUNDRY EXPERTS 0.8 Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The CX08 Series is X-FAB‘s 0.8 Micron Modular Mixed Signal Technology. Main target applications are standard cell, semi-custom and full custom


    Original     		PDF

    ZL70081

    Abstract: low cost hearing aid circuit diagram circuit diagram of pill camera circuit diagram of digital hearing aid insulin pump circuit diagram cardiac pacemaker 0.18-um CMOS technology characteristics Hearing Aid Circuit Diagram hearing aid chip circuit diagram of low cost hearing aid
    Text: RF Integrated Circuits for Medical Implants: Meeting the Challenge of Ultra Low Power Communication Peter Bradley, Ph.D. System Engineering Manager, Ultra-Low-Power Communications Division, Zarlink Semiconductor, Email: peter.bradley@zarlink.com Outline


    Original     		ZL70100: ZL70081: ZL70262: mid-1990s, ZL70081 low cost hearing aid circuit diagram circuit diagram of pill camera circuit diagram of digital hearing aid insulin pump circuit diagram cardiac pacemaker 0.18-um CMOS technology characteristics Hearing Aid Circuit Diagram hearing aid chip circuit diagram of low cost hearing aid PDF

    XH018

    Abstract: hall sensor 41 hall effect flow sensor 0.18-um CMOS technology characteristics X-Fab primitive sensor signal hall sensor CMOS Process Family micron cmos sensor connection 3 terminal hall effect sensor
    Text: 0.18 µm CMOS Process Family XH018 - Hall Sensor MIXED-SIGNAL FOUNDRY EXPERTS Embedded HALL Effect Sensor IP in 0.18 Micron Technology Description The XH018 Hall Sensor is X-FAB’s specialized readyto-use Hall effect sensor IP, based on the 0.18 m HV CMOS Processes.


    Original     		XH018 hall sensor 41 hall effect flow sensor 0.18-um CMOS technology characteristics X-Fab primitive sensor signal hall sensor CMOS Process Family micron cmos sensor connection 3 terminal hall effect sensor PDF

    0.18-um CMOS technology

    Abstract: 4318C Atmel 652 atmel 432 16Kx1 8kx2 ATU18 484 BGA pin diagram 0.18-um digital clock using gates PQFP 352
    Text: Features • • • • • • • • • • • • • • • • • • • High Performance ULC Family Suitable for Latest CPLDs and FPGAs conversion Very effective associated Physical synthesis/optimization Flow From 45K Gates up to 1000K Gates Supported


    Original     		1000K 55Kbit 847Kbit 250Mhz 4318C 0.18-um CMOS technology Atmel 652 atmel 432 16Kx1 8kx2 ATU18 484 BGA pin diagram 0.18-um digital clock using gates PQFP 352 PDF

    C350AVB

    Abstract: full adder using Multiplexer IC 74150 74LS382 74ls69 T2D 7N IC 74ls147 pin details 74LS396 MB652xxx 651XX 74LS86 full adder
    Text: FUJITSU MICROELECTRONICS F U JIT S U wmmm 7flC D B 37MT7bH □D03c]4b 3 • JZ CMOS Gate Array GENERAL INFORMATION The Fujitsu CM O S gate array fam ily consists of tw en tyeight device types which are fabricated w ith advanced silicon gate CMOS technology. And more than 14 devices


    OCR Scan     		37MT7bH 74LS175 74LS181 74LS183 74LS190 74LS191 74LS192 74LS193 74LS194A 74LS195A C350AVB full adder using Multiplexer IC 74150 74LS382 74ls69 T2D 7N IC 74ls147 pin details 74LS396 MB652xxx 651XX 74LS86 full adder PDF

    74LS299 APPLICATION NOTE

    Abstract: No abstract text available
    Text: TOSHIBA TC74HC299AP/AF TC74HC299 8-Bit PIPO Shift Register With Asynchronous Clear The TC74HC299A is a high speed CMOS 8-BIT PIPO SHIFT REGISTER fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.


    OCR Scan     		TC74HC299AP/AF TC74HC299 TC74HC299A 74LS299 APPLICATION NOTE PDF

    Untitled

    Abstract: No abstract text available
    Text: - TC74VHCU04F/FN/FS HEX INVERTER The TC74VHCU04 is an advanced high speed CMOS INVERTER fabricated with silicon gate C2MOS technology. It achieves the high speed operation sim ilar to equivalent Bipolar Schottky TTL while m aintaining the CMOS low


    OCR Scan     		TC74VHCU04F/FN/FS TC74VHCU04 PDF

    74LS74 truth table

    Abstract: 74ls74 timing setup hold 74LS74 function table
    Text: TOSHIBA TC74HC74AP/AF/AFN Dual D-Type Flip-Flop Preset and Clear The TC74HC74A is a high speed CMOS D FLIP-FLOP fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.


    OCR Scan     		TC74HC74AP/AF/AFN TC74HC74A 77MHz TC74HC/HCT 74LS74 truth table 74ls74 timing setup hold 74LS74 function table PDF

    ic 74ls164 AND SPECIFICATIONS

    Abstract: ic 74HC164 AND SPECIFICATIONS 74hc164 74HC164 equivalent 54HC 74HC HC164 M54HC164 M74HC164
    Text: MMHC164 HS-CMOS INTEGRATED CIRCUITS O M7WC164 PRELIMINARY DATA 8 BIT SIPO SHIFT REGISTER DESCRIPTION The M 54/74HC164 is a high speed CMOS 8 BIT SIPO SHIFT REGISTER fabricated in silicon gate C2MOS technology. It has the same high speed perform ance of LSTTL


    OCR Scan     		H54HC164 M74HC164 M54/74HC164 HC164 ic 74ls164 AND SPECIFICATIONS ic 74HC164 AND SPECIFICATIONS 74hc164 74HC164 equivalent 54HC 74HC M54HC164 M74HC164 PDF

    74ls112 function table

    Abstract: H R C M F 2J 225
    Text: TOSHIBA TC74HC112AP/AF/AFN Dual J-K Flip-Flop with Preset and Clear The TC74H C 112A is a high speed CMOS DUAL J-K FLIPFLOP fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.


    OCR Scan     		TC74HC112AP/AF/AFN TC74HC112A 67MHz TC74HC/HCT 74ls112 function table H R C M F 2J 225 PDF

    Untitled

    Abstract: No abstract text available
    Text: Æ ic te ! RadTolerant RAD-PAK Field Programmable Gate Arrays - m Features Radiation • • Characteristics RAD-PAK® Package Technology from Space Electronics, Inc. Improved Total Ionizing Dose TID Survivability - Can Im prove TI D 2-10x Over Standard Package


    OCR Scan     		CQ172 PDF

    M74HC377

    Abstract: No abstract text available
    Text: r r 7 SGS-THOMSON Ä 7 # R iœ tU O T « ! m s 4HC377 M74HC377 OCTAL D TYPE FLIP FLOP . HIGHSPEED fMAX = 73 MHz TYP. at Vcc = 5 V • LOW POWER DISSIPATION Ice = 4 nA (MAX.) at 25 °C ■ HIGH NOISE IMMUNITY Vnih = V n il = 28 % V Cc (MIN.) ■ OUTPUT DRIVE CAPABILITY


    OCR Scan     		4HC377 M74HC377 54/74LS377 377F1R 377B1R M54/74HC377 74HC377 M74HC377 PDF

    burp

    Abstract: 74HCT00
    Text: Revised February 1999 EMICQNDUCTGR tm MM74HCT00 Quad 2 Input NAND Gate General Description The MM74HCT00 is a NAND gates fabricated using advanced silicon-gate CMOS technology which provides the inherent benefits of CMOS— low quiescent power and wide power supply range. This device is input and output


    OCR Scan     		MM74HCT00 MM74HCT burp 74HCT00 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC74HC259AP/AF/AFN 8-Bit Addressable Latch The TC74HC259A is high speed CMOS MULTIPLEXERS fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.


    OCR Scan     		TC74HC259AP/AF/AFN TC74HC259A TC74HC/HCT PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC74HC174AP/AF/AFN HEX D-TVpe Flip-Flop with Clear The TC74HC174A is a high speed CMOS D-TYPE FLIPFLOP fabricated with silicon gate C 2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.


    OCR Scan     		TC74HC174AP/AF/AFN TC74HC174A TC74HC/HCT PDF

    Untitled

    Abstract: No abstract text available
    Text: T - Li ' C ~ 0 7 ' 0 7 Ordering number: EN3748 SANYO SEMICONDUCTOR CORP i SA\YO S3E 7^7071, D DG 1D5 2? No.3748 hUb • TSAJ M L C 74H C 175M CMOS High-Speed S tandard Logic Quad D-Type Flip-Flop w ith Common Clock and Reset I F e a tu re s • The MLC74HC175M consists of four identical D-type flip-flops w ith common reset and clock.


    OCR Scan     		EN3748 MLC74HC175M 74LS175) QQ10S3G PDF

    74HC273

    Abstract: 74LS273 54HC 74HC M54HC273 M74HC273
    Text: 11 SGS -THOMSON M54HC273 M74HC273 OCTAL D-TYPE FLIP FLOP WITH CLEAR • HIGH SPEED fMAX = 48 MHz TYP. at VCc = 5V ■ LOW POWER DISSIPATION |cc = 4 tiA (MAX.) at TA = 25°C ■ HIGH NOISE IMMUNITY V n !H = V n iL= 2 8 % V Cc (MIN). ■ OUTPUT DRIVE CAPABILITY


    OCR Scan     		M54HC273 M74HC273 54/74LS273 M54/74HC273 74HC273 74LS273 54HC 74HC M54HC273 M74HC273 PDF

    Q5119

    Abstract: No abstract text available
    Text: TOSHIBA TC74VHC174F/FN/FS/FT T O SH IBA C M O S DIGITAL INTEGRATED CIRCUIT SILICON M O N O LITH IC TC74VHC174F, TC74VHC174FN, TC74VHC174FS, TC74VHC174FT HEX D-TYPE FLIP-FLOP WITH CLEAR The TC74VHC174 is an advanced high speed CMOS HEX DTYPE FLIP FLOP fabricated w ith silicon gate C2MOS


    OCR Scan     		TC74VHC174F/FN/FS/FT TC74VHC174F, TC74VHC174FN, TC74VHC174FS, TC74VHC174FT TC74VHC174 Q5119 PDF