EC2612
Abstract: ec2612 pHEMT MAR 618 transistor
Text: EC2612 RoHS COMPLIANT 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm
|
Original
|
PDF
|
EC2612
40GHz
EC2612
18GHz
40GHz
DSEC26120077
-17-Mar-00
ec2612 pHEMT
MAR 618 transistor
|
Untitled
Abstract: No abstract text available
Text: EC2612 RoHS COMPLIANT 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm pHEMT technology. Gate width is 120µm and the 0.15µm
|
Original
|
PDF
|
EC2612
40GHz
EC2612
18GHz
40GHz
DSEC26120077
-17-Mar-00
|
ec2612 phemt
Abstract: pHEMT transistor 30GHz EC2612 MAR 618 transistor LS 9814
Text: EC2612 RoHS COMPLIANT 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm pHEMT technology. Gate width is 120µm and the 0.15µm
|
Original
|
PDF
|
EC2612
40GHz
EC2612
18GHz
40GHz
DSEC26120077
-17-Mar-00
ec2612 phemt
pHEMT transistor 30GHz
MAR 618 transistor
LS 9814
|
ec2612 pHEMT
Abstract: pHEMT transistor 30GHz EC2612 TRANSISTOR 30GHZ
Text: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron mobility transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low
|
Original
|
PDF
|
EC2612
40GHz
EC2612
18GHz
40GHz
DSEC26128099
ec2612 pHEMT
pHEMT transistor 30GHz
TRANSISTOR 30GHZ
|
pHEMT transistor 30GHz
Abstract: EC2612 ec2612 pHEMT 158467
Text: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low
|
Original
|
PDF
|
EC2612
40GHz
EC2612
18GHz
40GHz
DSEC26120077
-17-Marc-00
pHEMT transistor 30GHz
ec2612 pHEMT
158467
|
ec2612 phemt
Abstract: EC2612
Text: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor ¦ Chip size : 0.63 x 0.37 x 0.1 mm Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm
|
Original
|
PDF
|
EC2612
40GHz
EC2612
18GHz
40GHz
DSEC26120077
-17-Marc-00
ec2612 phemt
|
TGA1319A
Abstract: No abstract text available
Text: Product Application Note November 6, 2001 Robust Bias Option for 0.15 µm pHEMT MMIC Low-Noise Amplifiers Background: A bias network has been designed for low-noise MMIC amplifiers fabricated using the 0.15 um pHEMT process. This process exhibits a low pinch-off
|
Original
|
PDF
|
|
60Ghz
Abstract: CHA2157
Text: CHA2157 RoHS COMPLIANT 55-60GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
|
Original
|
PDF
|
CHA2157
55-60GHz
CHA2157
DSCHA21577150
60Ghz
|
Untitled
Abstract: No abstract text available
Text: CHA2157 RoHS COMPLIANT 55-60GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
|
Original
|
PDF
|
CHA2157
55-60GHz
CHA2157
DSCHA21577150
|
15 GHz power amplifier Output Power 37dBm
Abstract: AN0017 CHA5052-QGG
Text: CHA5052-QGG RoHS COMPLIANT 7-16GHz High Power Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA5052-QGG is a three-stage monolithic high power amplifier. The circuit is manufactured with a power PHEMT process, 0.15µm gate length, via holes
|
Original
|
PDF
|
CHA5052-QGG
7-16GHz
CHA5052-QGG
7-16GHz
37dBm
29dBm
700mA
28LQFN5x5
DSCHA5052QGG7033
15 GHz power amplifier Output Power 37dBm
AN0017
|
Traveling Wave Amplifier
Abstract: 95GH Dielectric Constant Silicon Nitride MMIC POWER AMPLIFIER hemt APMC2001 FMM5820X HMC-AUH312 TGA4803 TGA4906 InGaAs hemt biasing
Text: DC to 85GHz TWA and Ka-band 4.9W Power Amplifier Using an Optical Lithography Based Low Cost PHEMT Process Kohei Fujii, John Stanback, and Henrik Morkner White Paper Abstract Overview of The Mmic Process An optical photo lithography based 0.15 m GaAs PHEMT
|
Original
|
PDF
|
85GHz
575mA/mm,
753mW/mm
18GHz.
12dBm
AV02-1684EN
Traveling Wave Amplifier
95GH
Dielectric Constant Silicon Nitride
MMIC POWER AMPLIFIER hemt
APMC2001
FMM5820X
HMC-AUH312
TGA4803
TGA4906
InGaAs hemt biasing
|
TGA4511-EPU
Abstract: No abstract text available
Text: Advance Product Information August 2, 2002 30-38 GHz Balanced Low Noise Amplifier TGA4511-EPU Key Features • • • • • • Preliminary Measured Data Primary Applications Bias Conditions: Vd = 3.5 V, Id = 110 mA 5 Noise Figure dB 0.15 um pHEMT Technology
|
Original
|
PDF
|
TGA4511-EPU
0007-inch
TGA4511-EPU
|
Untitled
Abstract: No abstract text available
Text: TGA2513 Wideband LNA Key Features • • • • • • • Product Description The TriQuint TGA2513 is a compact LNA/Gain Block MMIC. The LNA operates from 2-23 GHz and is designed using TriQuint’s proven standard 0.15 um gate pHEMT production process.
|
Original
|
PDF
|
TGA2513
TGA2513
-60mV
0007-inch
|
TGA2513
Abstract: Q1-Q10 GaAs 0.15 um pHEMT
Text: TGA2513 Wideband LNA Key Features • • • • • • • Product Description The TriQuint TGA2513 is a compact LNA/Gain Block MMIC. The LNA operates from 2-23 GHz and is designed using TriQuint’s proven standard 0.15 um gate pHEMT production process.
|
Original
|
PDF
|
TGA2513
TGA2513
-60mV
0007-inch
Q1-Q10
GaAs 0.15 um pHEMT
|
|
|
Untitled
Abstract: No abstract text available
Text: Advance Product Information November 2, 2004 30-38 GHz Balanced Low Noise Amplifier TGA4511-EPU Key Features • • • • • • Preliminary Measured Data Primary Applications Bias Conditions: Vd = 3.5 V, Id = 110 mA 5 Noise Figure dB 0.15 um pHEMT Technology
|
Original
|
PDF
|
TGA4511-EPU
0007-inch
|
A5052A
Abstract: AN0017 CHA5052
Text: CHA5052aQGG RoHS COMPLIANT 7-16GHz High Power Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA5052aQGG is a monolithic high power amplifier. UMS A5052A YYWW three-stage The circuit is manufactured with a power PHEMT process, 0.15µm gate length, via holes
|
Original
|
PDF
|
CHA5052aQGG
7-16GHz
CHA5052aQGG
A5052A
7-16GHz
37dBm
29dBm
700mA
28LQFN5x5
DSCHA5052aQGG8294
A5052A
AN0017
CHA5052
|
AN0017
Abstract: CHA5056-QGG
Text: CHA5056-QGG RoHS COMPLIANT 17-27GHz High Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA5056-QGG is a monolithic high power amplifier. three-stage The circuit is manufactured with a power PHEMT process, 0.15µm gate length, via holes
|
Original
|
PDF
|
CHA5056-QGG
17-27GHz
CHA5056-QGG
17-27GHz
38dBm
890mA
28LQFN5x5
DSCHA5056QGG7033
AN0017
|
ka band lna
Abstract: TGA4820-EPU ka band Limiter HPA Ku diode 142 19C ka Band LNA, mixer TGB2001-EPU HPA-40 ka band power fet ka band space lna
Text: Microwave / Millimeter Wave Products GaAs MMICs for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: info-mmw@tqs.com Web: www.triquint.com TriQuint uses proven 0.25µm power pHEMT and 0.15µm LN processes to design MMICs for
|
Original
|
PDF
|
|
PCB Rogers RO4003 substrate
Abstract: AN0017 MO-220 RO4003 QFN 5x5 Rogers RO4003
Text: PA-P013663-QGG RoHS COMPLIANT 17-27GHz High Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The PA-P013663-QGG is a monolithic high power amplifier. three-stage The circuit is manufactured with a power PHEMT process, 0.15µm gate length, via holes
|
Original
|
PDF
|
PA-P013663-QGG
17-27GHz
PA-P013663-QGG
17-27GHz
38dBm
890mA
28LQFN5x5
DSPA-PO13663QGG6303
PCB Rogers RO4003 substrate
AN0017
MO-220
RO4003
QFN 5x5
Rogers RO4003
|
25c1815
Abstract: TGC1411 TGC1411-EPU DOUBLE FET
Text: Advance Product Information 0.3 - 10 GHz Downconverter TGC1411-EPU Key Features and Performance • • • • • • 0.25um pHEMT Technology 0.3-10 GHz RF/LO Frequency Range 0.15-2.5 GHz IF Frequency Range Nominal Conversion Gain of 12 dB Bias 3-5V @ 26 mA
|
Original
|
PDF
|
TGC1411-EPU
TGC1411-EPU
TGA1411
0007-inch
25c1815
TGC1411
DOUBLE FET
|
SUF-4000
Abstract: 15 GHz high power amplifier
Text: Preliminary SUF-4000 Product Description Sirenza Microdevices’ SUF-4000 is a monolithically matched broadband high IP3 gain block covering 0.15-10 GHz. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active bias network that operates from
|
Original
|
PDF
|
SUF-4000
SUF-4000
EDS-105418
15 GHz high power amplifier
|
12dBm
Abstract: Q102 TGA4508-EPU
Text: Advance Product Information December 20, 2001 37-42 GHz Low Noise Amplifier TGA4508-EPU Key Features • • • • • • 0.15 um pHEMT Technology 12 dBm Nominal Pout 13.5 dB Nominal Gain 2.7 dB Noise Figure @ 39 GHz Bias 3.5V @ 55mA, -0.5V < Vg < +0.5V
|
Original
|
PDF
|
TGA4508-EPU
115mm
676mm
0007-inch
12dBm
Q102
TGA4508-EPU
|
ka band gaas fet Package
Abstract: TGA4516 ka-band amplifier AMC8515
Text: Ka-Band 2W Power Amplifier TGA4516-TS Key Features • • • • • • 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq 1.9A under RF Drive 0.15 um 3MI MMW pHEMT Technology Thermal Spreader Dimensions:
|
Original
|
PDF
|
TGA4516-TS
20dBm
TGA4516
1050mA
ka band gaas fet Package
ka-band amplifier
AMC8515
|
TGA4516
Abstract: No abstract text available
Text: Advance Product Information December 2, 2004 Ka-Band 2W Power Amplifier TGA4516 Key Features • • • • 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq 1.9A under RF Drive 0.15 um 3MI MMW pHEMT Technology
|
Original
|
PDF
|
TGA4516
20dBm
1050mA
TGA4516
|
