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    Mill-Max Mfg Corp 2801-3-00-44-00-00-07-0

    IC & Component Sockets 300u AG OVER CU
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    Mouser Electronics 2801-3-00-44-00-00-07-0 2
    • 1 $1.74
    • 10 $1.24
    • 100 $1.04
    • 1000 $0.873
    • 10000 $0.733
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    Murrelektronik GmbH 7000-44032-8030130

    Murrelektronik M12 male 0 / M12 female 0 shielded B-cod., PUR AWG24+AWG22 shielded vt UL/CSA+drag ch. 1.3m
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 7000-44032-8030130
    • 1 $80.44
    • 10 $80.44
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    • 10000 $80.44
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    Murrelektronik GmbH 7000-44032-8031300

    Murrelektronik M12 MALE 0 / M12 FEMALE 0 SHIELDED B CODED,4 POLE, 803 PUR AWG24+AWG22 shielded v 13.0
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 7000-44032-8031300
    • 1 $334.13
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    • 1000 $334.13
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    0 280 130 044 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SICK WL 25 123

    Abstract: SICK 30 fgs sick 14 fgs sick DS 50 sick optic typ WL 9 sick wl 170 sick WL 14 p 430 Sensick Sensors DT 500 AD-LL-2M2 Sensick ds 60
    Text: ground suppression, ASI interface, fibre-optic cable versions, insensitivity to ambient light and mutual interference when units are installed close together, are all device standards. The WL 12 G “glass photoelectric switch” designed for filling systems used in the beverage industry, represents more than just a


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    Abstract: No abstract text available
    Text: Not for New Design 151 RLH www.vishay.com Vishay BCcomponents Aluminum Capacitors Radial Long-Life, High Voltage FEATURES • • • • • 044 RSH 85 ° C 151 RLH 105 °C miniaturized 152 RMH low voltage 148 RUS miniaturized APPLICATIONS • High-reliability and professional applications


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    PDF 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    RX1214B350Y

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B350Y NPN microwave power transistor Product specification Superseded data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Suitable for short and medium


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    PDF RX1214B350Y SCA53 127147/00/02/pp12 RX1214B350Y

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B350Y NPN microwave power transistor Product specification Superseded data of November 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Suitable for short and medium


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    PDF RX1214B350Y OT439

    ana 650 DIP 8

    Abstract: HV04
    Text: High Voltage DIP Leaded HV Style U.S. Preferred Styles C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 µF (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)


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    PDF N1500 AN650 ana 650 DIP 8 HV04

    Untitled

    Abstract: No abstract text available
    Text: High Voltage DIP Leaded HV Style U.S. Preferred Styles C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 µF (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)


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    PDF N1500 AN650

    101 2KV

    Abstract: X7R 1KV AN240 capacitor 270 2kv hv 102 AN120 HV03 HV05 N1500
    Text: High Voltage DIP Leaded HV Style U.S. Preferred Styles C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 µF (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)


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    PDF N1500 AN650 101 2KV X7R 1KV AN240 capacitor 270 2kv hv 102 AN120 HV03 HV05 N1500

    HV02

    Abstract: No abstract text available
    Text: High Voltage DIP Leaded HV Style U.S. Preferred Styles C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 µF (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)


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    PDF AN650 N1500 HV02

    Untitled

    Abstract: No abstract text available
    Text: High Voltage DIP Leaded HV Style U.S. Preferred Styles C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 µF (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)


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    PDF N1500 AN650

    0022 1kv

    Abstract: 101 2KV 223 1KV capacitor 270 2kv HV03 140-042 AN240 HIGH VOLTAGE capacitor 4kv hv 102 AN120
    Text: High Voltage DIP Leaded HV Style U.S. Preferred Styles C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 µF (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)


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    PDF N1500 AN650 0022 1kv 101 2KV 223 1KV capacitor 270 2kv HV03 140-042 AN240 HIGH VOLTAGE capacitor 4kv hv 102 AN120

    HV04

    Abstract: 102 3KV
    Text: High Voltage DIP Leaded HV Style U.S. Preferred Styles C0G Dielectric N1500 X7R Dielectric Capacitance Range 100 pF to 1.2 µF (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz) Capacitance Tolerances ±5%, ±10%, ±20% Operating Temperature Range


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    PDF AN650 N1500 HV04 102 3KV

    CAPACITOR 10k 3KV

    Abstract: E 203 M 1KV 223 1KV AN240 AN120 HV03 HV05 N1500 HIGH VOLTAGE capacitor 4kv
    Text: High Voltage DIP Leaded HV Style C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 F (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)


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    PDF N1500 AN650 CAPACITOR 10k 3KV E 203 M 1KV 223 1KV AN240 AN120 HV03 HV05 N1500 HIGH VOLTAGE capacitor 4kv

    Untitled

    Abstract: No abstract text available
    Text: High Voltage DIP Leaded HV Style C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 F (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)


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    PDF N1500 AN650

    CAPACITOR 10k 3KV

    Abstract: capacitor 203 1KV E 203 M 1KV HIGH VOLTAGE capacitor 4kv capacitor 270 2kv 68 1kv AN240 hv 102 AN120 HV03
    Text: High Voltage DIP Leaded HV Style C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 µF (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)


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    PDF N1500 AN650 CAPACITOR 10k 3KV capacitor 203 1KV E 203 M 1KV HIGH VOLTAGE capacitor 4kv capacitor 270 2kv 68 1kv AN240 hv 102 AN120 HV03

    Abb M3AA 200

    Abstract: Abb M3AA 160 Abb M3AA 100 M3BP abb M3BP 225 SMB 4 abb M2QA71M4B Abb M3AA 132 sc 2 M2BAT280 Abb M3AA 112 M2QA 315 L4B 4
    Text: IEC Low Voltage Induction Motors 400 V 50 Hz Motors for all applications Making you more competitive ABB has been manufacturing motors for over 100 years. Our products are designed to be reliable, efficient and cost effective, and we can supply motors for


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    PDF BU/400V Abb M3AA 200 Abb M3AA 160 Abb M3AA 100 M3BP abb M3BP 225 SMB 4 abb M2QA71M4B Abb M3AA 132 sc 2 M2BAT280 Abb M3AA 112 M2QA 315 L4B 4

    micro-x marking code E1

    Abstract: 0004E4 SOT 86 MARKING E4
    Text: PACKAGE OUTLINES All dimensions in millimeters inches , except where noted. For complete package specifications, as well as chip dimensions, refer to individual product specification sheets. Drawings are not to scale. 4 .42 .265 10.7 6.73 12.39 ± 0.76 (0.488 ± 0.030)


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    PDF SSOP-28 TQFP-48 micro-x marking code E1 0004E4 SOT 86 MARKING E4

    Untitled

    Abstract: No abstract text available
    Text: DATA LDT, LDS SWITCHES – MOMENTARY LDT AND LATCHING (LDS) ACTION BENEFITS Absolute reliability and simple assembly Compact design with very small mounting depth Excellent price/performance ratio Suitable for front and print-mounting Good illumination Many different application fields


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    Untitled

    Abstract: No abstract text available
    Text: DATA LDT, LDS SWITCHES – M OM ENTARY LDT AND LATCHING (LDS) ACTION BENEFITS Absolute reliability and simple assembly Compact design with very small mounting depth Excellent price/performance ratio Suitable for front and print-mounting Good illumination


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    PDF 9731LED

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor VCES IC110 IXBK75N170 IXBX75N170 VCE sat = 1700V = 75A ≤ 3.1V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


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    PDF IC110 IXBK75N170 IXBX75N170 O-264 PLUS247TM 75N170

    IXBK75N170

    Abstract: IXBX75N170 IXBX 75N170 PLUS247
    Text: Advance Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK75N170 IXBX75N170 VCES IC110 VCE sat = 1700V = 75A ≤ 3.1V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


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    PDF IXBK75N170 IXBX75N170 IC110 O-264 75N170 IXBK75N170 IXBX75N170 IXBX 75N170 PLUS247

    ixbk75n170

    Abstract: PLUS247 IXBX75N170 IXBX 75N170
    Text: Preliminary Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK75N170 IXBX75N170 VCES IC110 VCE sat = 1700V = 75A ≤ 3.1V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


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    PDF IXBK75N170 IXBX75N170 IC110 O-264 75N170 ixbk75n170 PLUS247 IXBX75N170 IXBX 75N170

    04B SOT363

    Abstract: 35 micro-X Package MARKING CODE F
    Text: PACKAGE OUTLINES All dimensions in millimeters inches , except where noted. For complete package specifications, as well as chip dimensions, refer to individual product specification sheets. Drawings are not to scale. 4 .42 .265 10.7 6.73 12.39 ± 0.76 (0.488 ± 0.030)


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    PDF HPMX-5001 SSOP-28 TQFP-32 TQFP-48 04B SOT363 35 micro-X Package MARKING CODE F

    mosfet k 2038

    Abstract: TO-40-040 PCP MOSFET 2sd1851 TRANSISTOR transistor 2SA transistor 2 sa 72 2SB1205 2SC5155
    Text: Produci Selection Guide by Function High-Voltage Applications Absolute maximum ratings Package Electrical characteristics T a = 2 5 t ICBO max @ VCB Type No. Page Type Drawing num ber VCBO (V ) VCEO (V ) vebo (V ) 1C (m A ) PC (m W ) A ICBOmax ( * A) VCB


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    PDF 2SK2170 2SK1068 2SK1069 2SK1332 2SK2219 2SK303 2SK545 2SK771 mosfet k 2038 TO-40-040 PCP MOSFET 2sd1851 TRANSISTOR transistor 2SA transistor 2 sa 72 2SB1205 2SC5155

    Philips electrolytic 106 screw

    Abstract: STR aluminium electrolytic capacitor
    Text: DISCRETE SEMICONDUCTORS RX1214B350Y NPN microwave power transistor Product specification Superseded data of November 1994 Philips Semiconductors 1997 Feb 18 PHILIPS PHILIPS Philips Semiconductors Product specification NPN microwave power transistor RX1214B350Y


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    PDF RX1214B350Y RX1214B350Y SCA53 127147/00/02/pp12 Philips electrolytic 106 screw STR aluminium electrolytic capacitor