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    IXBX75N170 Price and Stock

    IXYS Corporation IXBX75N170

    IGBT 1700V 200A PLUS247-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXBX75N170 Tube 180 300
    • 1 -
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    • 1000 $34.805
    • 10000 $34.805
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    Mouser Electronics IXBX75N170 156
    • 1 $50.33
    • 10 $47.2
    • 100 $40.07
    • 1000 $39.35
    • 10000 $39.35
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    Future Electronics IXBX75N170 Tube 24 Weeks 30
    • 1 -
    • 10 -
    • 100 $55.49
    • 1000 $55.49
    • 10000 $55.49
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    TTI IXBX75N170 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $34.81
    • 10000 $34.81
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    TME IXBX75N170 1
    • 1 $75.62
    • 10 $60.04
    • 100 $56.04
    • 1000 $56.04
    • 10000 $56.04
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    New Advantage Corporation IXBX75N170 8 1
    • 1 -
    • 10 $102.43
    • 100 $102.43
    • 1000 $102.43
    • 10000 $102.43
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    IXYS Corporation IXBX75N170A

    IGBT 1700V 110A 1040W PLUS247
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    DigiKey IXBX75N170A Tube 300
    • 1 -
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    • 100 -
    • 1000 $37.0275
    • 10000 $37.0275
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    Mouser Electronics IXBX75N170A
    • 1 -
    • 10 -
    • 100 -
    • 1000 $40.39
    • 10000 $40.39
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    TTI IXBX75N170A Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $37.03
    • 10000 $37.03
    		Buy Now
    TME IXBX75N170A 8 1
    • 1 $67.07
    • 10 $56.25
    • 100 $54.3
    • 1000 $54.3
    • 10000 $54.3
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    New Advantage Corporation IXBX75N170A 24 1
    • 1 -
    • 10 $111.4
    • 100 $103.97
    • 1000 $103.97
    • 10000 $103.97
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    Littelfuse Inc IXBX75N170

    Disc Igbt Bimosfet-High Volt To-247Ad/ Tube |Littelfuse IXBX75N170
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    Newark IXBX75N170 Bulk 300
    • 1 -
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    • 100 $36.48
    • 1000 $36.48
    • 10000 $36.48
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    Littelfuse Inc IXBX75N170A

    Disc Igbt Bimosfet-High Volt To-247Ad/ Tube |Littelfuse IXBX75N170A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IXBX75N170A Bulk 300
    • 1 -
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    • 100 $38.81
    • 1000 $38.81
    • 10000 $38.81
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    IXYS Integrated Circuits Division IXBX75N170A

    IGBT DIS.DIODE SINGLE 65A 1700V BIMOSFET PLUS247
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    Ozdisan Elektronik IXBX75N170A 30
    • 1 $83.43935
    • 10 $83.43935
    • 100 $77.9807
    • 1000 $77.9807
    • 10000 $77.9807
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    IXBX75N170 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXBX75N170 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1700V 200A 1040W PLUS247 Original PDF
    IXBX75N170A IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 1700V 110A 1040W PLUS247 Original PDF

    IXBX75N170 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor VCES IC110 IXBK75N170 IXBX75N170 VCE sat = 1700V = 75A ≤ 3.1V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IC110 IXBK75N170 IXBX75N170 O-264 PLUS247TM 75N170

    IXBK75N170

    Abstract: IXBX75N170 IXBX 75N170 PLUS247
    Text: Advance Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK75N170 IXBX75N170 VCES IC110 VCE sat = 1700V = 75A ≤ 3.1V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXBK75N170 IXBX75N170 IC110 O-264 75N170 IXBK75N170 IXBX75N170 IXBX 75N170 PLUS247

    ixbk75n170

    Abstract: PLUS247 IXBX75N170 IXBX 75N170
    Text: Preliminary Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK75N170 IXBX75N170 VCES IC110 VCE sat = 1700V = 75A ≤ 3.1V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXBK75N170 IXBX75N170 IC110 O-264 75N170 ixbk75n170 PLUS247 IXBX75N170 IXBX 75N170

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor VCES IC90 IXBK75N170A IXBX75N170A VCE sat tfi(typ) = = ≤ = 1700V 65A 6.00V 60ns TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXBK75N170A IXBX75N170A O-264 PLUS247TM Tstg60V 75N170A

    IXBK75N170A

    Abstract: IXBX75N170 PLUS247 IXBX75N170A G1040 100Z
    Text: Advance Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK75N170A IXBX75N170A VCES IC90 VCE sat tfi(typ) = = ≤ = 1700V 65A 6.00V 60ns TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXBK75N170A IXBX75N170A O-264 PLUS247TM 75N170A IXBK75N170A IXBX75N170 PLUS247 IXBX75N170A G1040 100Z