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    "VLSI TECHNOLOGY" ABSTRACT Search Results

    "VLSI TECHNOLOGY" ABSTRACT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-SATDRIVEX2-001 Amphenol Cables on Demand Amphenol CS-SATDRIVEX2-001 Serial ATA Extension Cable - SATA II Drive Extension Cable with Power (6.0 Gbps) 1m Datasheet
    CS-SATDRIVEX2-002 Amphenol Cables on Demand Amphenol CS-SATDRIVEX2-002 Serial ATA Extension Cable - SATA II Drive Extension Cable with Power (6.0 Gbps) 2m Datasheet
    CS-SATDRIVEX2-000.5 Amphenol Cables on Demand Amphenol CS-SATDRIVEX2-000.5 Serial ATA Extension Cable - SATA II Drive Extension Cable with Power (6.0 Gbps) 0.5m Datasheet
    CS-SASDDP8282-000.5 Amphenol Cables on Demand Amphenol CS-SASDDP8282-000.5 29 position SAS to SATA Drive Connector Dual Data Lanes Cable 0.5m Datasheet
    CS-SASDDP8282-001 Amphenol Cables on Demand Amphenol CS-SASDDP8282-001 29 position SAS to SATA Drive Connector Dual Data Lanes Cable 1m Datasheet

    "VLSI TECHNOLOGY" ABSTRACT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    "RF MOSFETs"

    Abstract: "vlsi technology" abstract for n channel depletion MOSFET depletion p mosfet RF MOSFETs AN1226 mosfet for different channel length AN1228 n mosfet depletion mosfet p-type
    Text: AN1226 APPLICATION NOTE UNDERSTANDING LDMOS DEVICE FUNDAMENTALS John Pritiskutch - Brett Hanson 1. ABSTRACT This paper focuses on the structural aspects of two basic types of RF power MOSFETS: the DMOS and the LDMOS. The comparison of the DMOS and LDMOS structures reveals the basic fundamentals of the


    Original     		PDF AN1226 "RF MOSFETs" "vlsi technology" abstract for n channel depletion MOSFET depletion p mosfet RF MOSFETs AN1226 mosfet for different channel length AN1228 n mosfet depletion mosfet p-type

    "RF MOSFETs"

    Abstract: n mosfet depletion depletion p mosfet "vlsi technology" abstract for N CHANNEL DEPLETION MOSFET p channel depletion mosfet RF MOSFETs "vlsi technology" abstract AN1226 n mosfet depletion note
    Text: AN1226 APPLICATION NOTE UNDERSTANDING LDMOS DEVICE FUNDAMENTALS John Pritiskutch - Brett Hanson 1. ABSTRACT This paper focuses on the structural aspects of two basic types of RF power MOSFETS: the DMOS and the LDMOS. The comparison of the DMOS and LDMOS structures reveals the basic fundamentals of the


    Original     		PDF AN1226 "RF MOSFETs" n mosfet depletion depletion p mosfet "vlsi technology" abstract for N CHANNEL DEPLETION MOSFET p channel depletion mosfet RF MOSFETs "vlsi technology" abstract AN1226 n mosfet depletion note

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order Number: AN1405/D SEMICONDUCTOR TECHNICAL DATA Rev 1, 09/2001 AN1405 ECL Clock Distribution Techniques Prepared by: Todd Pearson ECL Applications Engineering Abstract This application note provides information on system design using ECL logic technologies for reducing system clock skew


    Original     		PDF AN1405/D AN1405

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order Number: AN1405/D SEMICONDUCTOR TECHNICAL DATA Rev 1, 09/2001 AN1405 ECL Clock Distribution Techniques Prepared by: Todd Pearson ECL Applications Engineering Abstract This application note provides information on system design using ECL logic technologies for reducing system clock skew


    Original     		PDF AN1405/D AN1405

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor, Inc. Order number: AN1405 Rev 1, 09/2001 APPLICATION NOTE AN1405 ECL Clock Distribution Techniques By: Todd Pearson ECL Applications Engineering ABSTRACT This application note provides information on system design using ECL logic technologies for reducing system clock skew


    Original     		PDF AN1405

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor, Inc. MOTOROLA Order Number: AN1405/D SEMICONDUCTOR TECHNICAL DATA Rev 1, 09/2001 AN1405 ECL Clock Distribution Techniques Prepared by: Todd Pearson ECL Applications Engineering Abstract This application note provides information on system design


    Original     		PDF AN1405/D AN1405

    MC10E111

    Abstract: MPC973 10H645 AN1405 E211
    Text: Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order Number: AN1405/D Rev 1, 09/2001 ECL Clock Distribution Techniques AN1405 Prepared by: Todd Pearson ECL Applications Engineering Abstract This application note provides information on system design


    Original     		PDF AN1405/D AN1405 MC10E111 MPC973 10H645 AN1405 E211

    Untitled

    Abstract: No abstract text available
    Text: 1990 Optical Society of America This paper was published in Optics Letters and is made available as an electronic reprint with the permission of OSA. The paper can be found at the following URL on the OSA website:


    Original     		PDF ol-15-5-291

    DUSLIC

    Abstract: code for echo SICOFI-4 c2ku
    Text: Integrated Digital Line CODEC Architectures: A Tutorial Review Manish Bhardwaj Telecom Devices Signal Processing and Control Division Microelectronics Design Center Infineon Asia Pacific 168 Kallang Way Singapore 349253. e-mail: manish.bhardwaj@infineon.com


    Original     		PDF 1960s, DUSLIC code for echo SICOFI-4 c2ku

    flash "high temperature data retention" mechanism

    Abstract: Angstrem Hebrew material science and technology 1117 FG 0.18-um CMOS Flash technology DSASW0037374
    Text: SuperFlash Memory Program/Erase Endurance Viktor Markov, Xian Liu, Alexander Kotov, Amitay Levi, Tho Ngoc Dang, and Yuri Tkachev Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA 94086, E-mail: akotov@sst.com Abstract––Program/erase endurance data for SuperFlash


    Original     		PDF 32Kbit flash "high temperature data retention" mechanism Angstrem Hebrew material science and technology 1117 FG 0.18-um CMOS Flash technology DSASW0037374

    "vlsi technology" abstract

    Abstract: magnetic read switch circuit current conveyors BL14 "vlsi technology" abstract for free ieee paper on vlsi
    Text: To be published at VLSI Symposium 2002 A low power 1Mbit MRAM based on 1T1MTJ bit cell integrated with Copper Interconnects M. Durlam, P. Naji, A. Omair, M. DeHerrera, J. Calder, J. M. Slaughter, B. Engel, N. Rizzo, G. Grynkewich, B. Butcher, C. Tracy, K. Smith, K. Kyler, J. Ren, J. Molla, B. Feil, R. Williams, S. Tehrani


    Original     		PDF 256kb "vlsi technology" abstract magnetic read switch circuit current conveyors BL14 "vlsi technology" abstract for free ieee paper on vlsi

    tunnel diodes

    Abstract: 1E-18 injector tunnel detector ed 39
    Text: Tunneling Phenomenon in SuperFlashâ Cell A.Kotov, A.Levi, Yu.Tkachev, and V.Markov Silicon Storage Technology Inc., 1171 Sonora Court, Sunnyvale, CA 94086, Tel. 408 522-7350, akotov@sst.com Abstract––An extensive investigation of interpoly oxide conduction (erase) mechanism for SuperFlash cell is


    Original     		PDF

    16 point DFT butterfly graph

    Abstract: radix-2 DIT FFT C code modified booth circuit diagram radix-2 4 bit modified booth multipliers radix-2 fft xilinx 16 point Fast Fourier Transform radix-2 BUTTERFLY DSP applications for modified booth algorithm FPGA DIF FFT using radix 4 fft
    Text: The 8th International Conference on Signal Processing Applications and Technology, Toronto Canada, September 13-16 1998. Computing Multidimensional DFTs Using Xilinx FPGAs Chris Dick chrisd@xilinx.com Xilinx Inc. 2100 Logic Drive San Jose CA 95124 Abstract: This paper reports on a reconfigurable


    Original     		PDF 512-pixel 16 point DFT butterfly graph radix-2 DIT FFT C code modified booth circuit diagram radix-2 4 bit modified booth multipliers radix-2 fft xilinx 16 point Fast Fourier Transform radix-2 BUTTERFLY DSP applications for modified booth algorithm FPGA DIF FFT using radix 4 fft

    "vlsi technology" abstract for

    Abstract: TRANSISTOR 30GHZ "vlsi technology" abstract Bipolar HJ 30GHz transistor trench TEOS oxide layer complementary npn-pnp Schematics 5250 SiGe PNP transistor high gain PNP RF TRANSISTOR
    Text: A New Complementary Bipolar Process featuring a Very High Speed PNP. M C Wilson, P H Osborne, S Nigrin, S B Goody, J Green, S J Harrington, T Cook, S Thomas and A J Manson. Mitel Semiconductor Cheney Manor, Swindon, Wiltshire, SN2 2QW, U.K. Abstract This paper introduces "Process HJ" a


    Original     		PDF 20GHz 30GHz, "vlsi technology" abstract for TRANSISTOR 30GHZ "vlsi technology" abstract Bipolar HJ 30GHz transistor trench TEOS oxide layer complementary npn-pnp Schematics 5250 SiGe PNP transistor high gain PNP RF TRANSISTOR

    TMS320C6xx

    Abstract: SN74LVCH245 SN74ABT SN74AHC245 SN74LVC TMS320C6201 ABTH245 SCLA015 RESISTOR NETWORK matched
    Text: Application Report SCLA015 - February 2001 Bus-Hold Circuit Eilhard Haseloff Standard Linear & Logic ABSTRACT When designing systems that include CMOS devices, designers must pay special attention to the operating condition in which all of the bus drivers are in an inactive, high-impedance


    Original     		PDF SCLA015 TMS320C6xx SN74LVCH245 SN74ABT SN74AHC245 SN74LVC TMS320C6201 ABTH245 RESISTOR NETWORK matched

    ICCAD-94

    Abstract: bit-slice Signal Path Designer
    Text: Circuit Design Environment and Layout Planning Bharat Krishna, NIKE-SC/Design Technology, Intel Corp. Gil Kleinfeld, NIKE-HF/Design Technology, Intel Corp. Index words: circuit design, layout planning Abstract Circuit design in deep sub-micron technologies requires


    Original     		PDF

    "vlsi technology" abstract

    Abstract: "vlsi technology" abstract for split-gate flash
    Text: Endurance Characteristics of SuperFlash Memory Xian Liu*, Viktor Markov, Alexander Kotov, Tho Ngoc Dang, Amitay Levi Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA94086, USA Ian Yue, Andy Wang, and Rodger Qian SST China, Ltd., Bldg. 24, No.115, Lane 572, Bibo Road, Zhangjiang Hi-Tech Park, Shanghai, 201203, P.R. China


    Original     		PDF CA94086, "vlsi technology" abstract "vlsi technology" abstract for split-gate flash

    USE OF TRANSISTOR

    Abstract: Marquardt Switches transistor model list
    Text: Transistor Abstraction for the Functional Verification of FPGAs Guy Dupenloup, Thierry Lemeunier, Roland Mayr Altera Corporation 101 Innovation Drive San Jose, CA 95134 1-408-544-8672 {gdupenlo, tlemeuni, rmayr}@altera.com ABSTRACT This paper discusses the use of transistor abstraction to enable the


    Original     		PDF

    mindspeed t4000

    Abstract: iphone 3G comcerto 4G 3G LTE WIMAX white paper iphone 4 T4000 material data sheet arm11 fft iphone IS-54 "channel estimation"
    Text: White Paper > Mindspeed® Solves 4G Challenges with New Class of Multi-Core Baseband Processing System-on-Chips SoCs for Pico, Micro and Macrocell Platforms Accelerating 4G Computational Demands Spur Need for Highly Integrated, SoCs that Combine Multiple,


    Original     		PDF the000 84000-WTP-001-A mindspeed t4000 iphone 3G comcerto 4G 3G LTE WIMAX white paper iphone 4 T4000 material data sheet arm11 fft iphone IS-54 "channel estimation"

    FT232 DATA SHEET

    Abstract: ft232 pin diagram VMUSIC2 USB HOST DRIVER V03 vf2f VNC1L ft232 VDIP1 example source code VDIP2 Lexar Firefly
    Text: Future Technology Devices International Ltd Vinculum Firmware User Manual Version: 2.1 Issue Date: 2007-08-02 Future Technology Devices International Ltd. FTDI 373 Scotland Street, Glasgow G5 8QB U.K. Tel.: +44 (0) 141 429 2777 Fax: + 44 (0) 141 429 2758


    Original     		PDF

    PT6045

    Abstract: VSC370 PT6005
    Text: V L S I TECHNOLOGY INC 4 7E D • =1300347 V L S I Tech n o lo gy , in c . 0000070 7 ■ VTI 'T - v z - m VSC370 SERIES 1-MICRON HIGH-DENSITY STANDARD CELL LIBRARY FEATURES • Advanced 0.85-micron channel length, 1.0-micron gate length silicon gate CMOS technology


    OCR Scan     		PDF VSC370 85-micron 000fiö T-42-41 PT6045 PT6005

    PT6042

    Abstract: No abstract text available
    Text: V L S I TECHNOLOGY I NC H7E J> T3flfl347 D a 0 ñ ñ 2 2 7 V L S I Tech n o lo gy , in c . - r - m PRELIMINARY VTI - m VSC450 SERIES O.8-MICRON HIGH-PERFORMANCE STANDARD CELL LIBRARY FEATURES • Advanced 0.7-micron channel length, 0.8-micron drawn gate length silicon


    OCR Scan     		PDF T3flfl347 VSC450 T-42-41 PT6042

    PT6042

    Abstract: PT6045 VSC350 PT6005 nd02d2
    Text: V L S I TECHNOLOGY INC 47 E D =1350347 0 0 0 0 0 3 0 VTI V L S I Technology , in c VSC350 SERIES 1-MICRON HIGH-PERFORMANCE STANDARD CELL LIBRARY FEATURES • Fast design turn-around time with COMPASS Design Automation’s advanced design tools and methodology


    OCR Scan     		PDF VSC350 85-micron T-42-41 PT6042 PT6045 PT6005 nd02d2

    integrated circuit TL 2262

    Abstract: PT6042 180 nm CMOS standard cell library Synopsys compass ic ND02D2 0.03 um CMOS technology VSC470
    Text: V L S I TECHNOLOGY INC M7E D VTI V L S I T ech n o lo g y , in c . T - m PRELIMINARY - m VSC470 SERIES 0.8-MICRON HIGH-DENSITY STANDARD CELL LIBRARY FEATURES • Advanced 0.7-micron channel length, 0.8-micron drawn gate length silicon gate CMOS technology


    OCR Scan     		PDF VSC470 integrated circuit TL 2262 PT6042 180 nm CMOS standard cell library Synopsys compass ic ND02D2 0.03 um CMOS technology