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    PT6042

    Abstract: No abstract text available
    Text: V L S I TECHNOLOGY I NC H7E J> T3flfl347 D a 0 ñ ñ 2 2 7 V L S I Tech n o lo gy , in c . - r - m PRELIMINARY VTI - m VSC450 SERIES O.8-MICRON HIGH-PERFORMANCE STANDARD CELL LIBRARY FEATURES • Advanced 0.7-micron channel length, 0.8-micron drawn gate length silicon


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    T3flfl347 VSC450 T-42-41 PT6042 PDF

    integrated circuit TL 2262

    Abstract: PT6042 180 nm CMOS standard cell library Synopsys compass ic ND02D2 0.03 um CMOS technology VSC470
    Text: V L S I TECHNOLOGY INC M7E D VTI V L S I T ech n o lo g y , in c . T - m PRELIMINARY - m VSC470 SERIES 0.8-MICRON HIGH-DENSITY STANDARD CELL LIBRARY FEATURES • Advanced 0.7-micron channel length, 0.8-micron drawn gate length silicon gate CMOS technology


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    VSC470 integrated circuit TL 2262 PT6042 180 nm CMOS standard cell library Synopsys compass ic ND02D2 0.03 um CMOS technology PDF

    Untitled

    Abstract: No abstract text available
    Text: VIT E SS E S E M I C O N D U C T O R 3QE D • =1502331 0 0 0 0 5 7 2 2 « V T S r ^ 2 -J /~ Ÿ Û Features Architecture • Superior Performance: High Speed, High Density, Very Low Pow er Dissipation • Proven G aA s E /D M E S F E T Process • Array Perform ance


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    VSC4500/VSC2000 PDF