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    "ULTRA LOW NOISE" NPN TRANSISTOR Search Results

    "ULTRA LOW NOISE" NPN TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    "ULTRA LOW NOISE" NPN TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC5741

    Abstract: 09 18 514 7813 2SC5741-T1
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5741 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • 3-pin ultra super minimold package ORDERING INFORMATION


    Original     		PDF 2SC5741 2SC5741-T1 2SC5741 09 18 514 7813 2SC5741-T1

    2SC5675

    Abstract: 2SC5675-T1 APPLICATION OF IC 7492
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5675 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • 3-pin ultra super minimold package ORDERING INFORMATION


    Original     		PDF 2SC5675 2SC5675-T1 2SC5675 2SC5675-T1 APPLICATION OF IC 7492

    2SC5599

    Abstract: 2SC5599-T1 marking TV transistor 2SC5599
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5599 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • 3-pin ultra super minimold package t = 0.75 mm


    Original     		PDF 2SC5599 2SC5599-T1 2SC5599 2SC5599-T1 marking TV transistor 2SC5599

    marking NEC rf transistor

    Abstract: nec npn rf
    Text: PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR NE662M03 NPN SILICON RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Ideal for low noise ⋅ high-gain amplification and oscillation at 3 GHz or over


    Original     		PDF NE662M03 NE662M03 NE662M03-T1 marking NEC rf transistor nec npn rf

    nec 14308

    Abstract: 2SC5736 2FB100 2SC5736-T1 c 2579 power transistor
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5736 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • Flat-lead 3-pin thin-type ultra super minimold package


    Original     		PDF 2SC5736 2SC5736-T1 nec 14308 2SC5736 2FB100 2SC5736-T1 c 2579 power transistor

    IC 7414 in capacitance meter

    Abstract: 2SC5676 2SC5676-T1 NEC 2532
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5676 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • Flat-lead 3-pin thin-type ultra super minimold package


    Original     		PDF 2SC5676 2SC5676-T1 IC 7414 in capacitance meter 2SC5676 2SC5676-T1 NEC 2532

    transistor nec 8772

    Abstract: nec 8772 transistor NEC transistor 8772 2SC5800 nec 8772 transistor zo 607 2SC5800-T1 nec 2035 728 8772 nec transistor
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5800 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low phase distortion, low voltage operation • Ideal for OSC applications • Flat-lead 3-pin thin-type ultra super minimold package


    Original     		PDF 2SC5800 2SC5800-T1 transistor nec 8772 nec 8772 transistor NEC transistor 8772 2SC5800 nec 8772 transistor zo 607 2SC5800-T1 nec 2035 728 8772 nec transistor

    nec 14305

    Abstract: 2SC5745-T1 2SC5745 24 6407 052 021 888
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5745 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • Flat-lead 3-pin thin-type ultra super minimold package


    Original     		PDF 2SC5745 2SC5745-T1 nec 14305 2SC5745-T1 2SC5745 24 6407 052 021 888

    2SC5737

    Abstract: 2SC5737-T1 nec 2501 852 c 5929 transistor
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5737 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for VCO applications • Flat-lead 3-pin thin-type ultra super minimold package


    Original     		PDF 2SC5737 2SC5737-T1 2SC5737 2SC5737-T1 nec 2501 852 c 5929 transistor

    NESG210719

    Abstract: No abstract text available
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG210719 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • High breakdown voltage technology for SiGe Tr.


    Original     		PDF NESG210719 NESG210719 NESG210719-A NESG210719-T1 NESG210719-T1-A PU10419EJ03V0DS

    2SC5606

    Abstract: transistor 3504 nec 2SC5606-T1 NEC JAPAN 3504
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold


    Original     		PDF 2SC5606 2SC5606-T1 2SC5606 transistor 3504 nec 2SC5606-T1 NEC JAPAN 3504

    2SC5606

    Abstract: 2SC5606-T1 ic ta 7698
    Text: PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold


    Original     		PDF 2SC5606 2SC5606-T1 2SC5606 2SC5606-T1 ic ta 7698

    NEC semiconductor

    Abstract: NEC JAPAN marking NEC rf transistor nec npn rf NESG210719 NESG210719-T1 transistor RF S-parameters NEC D7
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG210719 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • High breakdown voltage technology for SiGe Tr.


    Original     		PDF NESG210719 NESG210719-T1-A NESG210719-T1 NESG210719-A NEC semiconductor NEC JAPAN marking NEC rf transistor nec npn rf NESG210719 NESG210719-T1 transistor RF S-parameters NEC D7

    NESG210719

    Abstract: NESG210719-T1
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG210719 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • High breakdown voltage technology for SiGe Tr.


    Original     		PDF NESG210719 NESG210719-A NESG210719-T1-A NESG210719-T1 NESG210719 NESG210719-T1

    nec 2741

    Abstract: nec a 634 2SC5007 2SC5433 2SC5433-T1
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5433 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5007 • Flat-lead 3-pin thin-type ultra super minimold package


    Original     		PDF 2SC5433 2SC5007 2SC5433-T1 nec 2741 nec a 634 2SC5007 2SC5433 2SC5433-T1

    2SC5010

    Abstract: 2SC5435 2SC5435-T1 marking tk
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5435 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5010 • Flat-lead 3-pin thin-type ultra super minimold package


    Original     		PDF 2SC5435 2SC5010 2SC5435-T1 2SC5010 2SC5435 2SC5435-T1 marking tk

    2SC5186

    Abstract: 2SC5436 2SC5436-T1 nec 7440
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5436 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5186 • Flat-lead 3-pin thin-type ultra super minimold package


    Original     		PDF 2SC5436 2SC5186 2SC5436-T1 2SC5186 2SC5436 2SC5436-T1 nec 7440

    2SC5432-T1

    Abstract: 2SC5006 2SC5432
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5432 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5006 • Flat-lead 3-pin thin-type ultra super minimold package


    Original     		PDF 2SC5432 2SC5006 2SC5432-T1 2SC5432-T1 2SC5006 2SC5432

    ic 4074

    Abstract: 2SC5437 2SC5195 2SC5437-T1
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5437 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5195 • Flat-lead 3-pin thin-type ultra super minimold package


    Original     		PDF 2SC5437 2SC5195 2SC5437-T1 ic 4074 2SC5437 2SC5195 2SC5437-T1

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON RF TRANSISTOR NE68719 NPN EPITAXIAL SILICON RF TRANSISTOR FOR LOW-NOISE MICROWAVE AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • Low noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PDF NE68719 NE68719-A NE68719-T1-A PU10213EJ01V0DS

    NE68719

    Abstract: NE68719-T1-A
    Text: NPN SILICON RF TRANSISTOR NE68719 NPN EPITAXIAL SILICON RF TRANSISTOR FOR LOW-NOISE MICROWAVE AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • Low noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PDF NE68719 NE68719-A NE68719-T1-A NE68719

    pu102

    Abstract: 2SC5186-T1 RF NPN POWER TRANSISTOR 3 GHZ 2SC5186 nec microwave marking 86
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5186 NPN EPITAXIAL SILICON RF TRANSISTOR FOR LOW-NOISE MICROWAVE AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • Low noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PDF 2SC5186 2SC5186-T1 pu102 2SC5186-T1 RF NPN POWER TRANSISTOR 3 GHZ 2SC5186 nec microwave marking 86

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG204619 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PDF NESG204619 NESG204619-A NESG204619-T1-A PU10465EJ01V0DS

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF587 . . . designed for use in high-gain, low-noise, ultra-linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications. • Low Noise Figure —


    OCR Scan     		PDF MRF587 MRF587